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Factory Pack QuantityFactory Pack Quantity

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Manufacturer Part Number

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Supply Voltage-Nom (Vsup)

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Supply Voltage-Min (Vsup)

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Data Retention Time-Min

Write Protection

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Product Category

Length

Width

GS8321E36AGD-150
GS8321E36AGD-150

GSI Technology

In Stock

-

-

8 Weeks

BGA-165

YES

165

7.5 ns

GSI Technology

150 MHz

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS8321E36AGD-150

150 MHz

133@Flow-Through/150@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

3

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

85 °C

-

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.31

Details

Yes

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 85 °C

Tray

GS8321E36AGD

e1

Yes

3A991.B.2.B

DCD Pipeline/Flow Through

TIN SILVER COPPER

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

-

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

2.5/3.3 V

OTHER

2.3 V

36 Mbit

4

SYNCHRONOUS

190 mA, 200 mA

7.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

CACHE SRAM

-

-

-

-

-

2.3 V

SRAM

15 mm

13 mm

GS8161E36DD-250V
GS8161E36DD-250V

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

SDR

18

-

Parallel

GSI Technology

-

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

512 kWords

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FBGA

2.7 V

1.7 V

-

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS8161E36DD

-

-

-

DCD Pipeline/Flow Through

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

18 Mbit

4

-

225 mA, 245 mA

5.5 ns

Flow-Through/Pipelined

512 k x 36

-

-

-

19 Bit

SRAM

18 Mbit

-

-

Commercial

-

-

-

-

-

-

-

-

-

SRAM

-

-

GS8321E36AD-200
GS8321E36AD-200

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

-

-

SDR

-

-

Parallel

-

-

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2.7, 3.6 V

+ 70 C

-

2.3, 3 V

0 C

-

-

Surface Mount

SMD/SMT

36 Bit

1 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FBGA

3.6 V

2.3 V

-

Synchronous

-

2.5, 3.3 V

Commercial grade

0 to 85 °C

-

GS8321E36AD

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

165

-

-

-

-

-

-

36 Mbit

4

-

205 mA, 240 mA

6.5 ns

Flow-Through/Pipelined

1 M x 36

-

-

-

20 Bit

-

36 Mbit

-

-

Commercial

-

-

-

-

-

-

-

-

-

-

-

-

GS8182D18BGD-250
GS8182D18BGD-250

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

DDR

18

-

Parallel

GSI Technology

-

250 MHz

250 MHz

1.9 V

+ 70 C

DDR

1.7 V

0 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

1 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaQuad-II

1.8000 V

Commercial grade

0 to 70 °C

Tray

GS8182D18BGD

-

-

-

SigmaQuad-II

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

18 Mbit

2

-

420 mA

-

Pipelined

1 M x 18

-

-

-

18 Bit

SRAM

18 Mbit

-

-

Commercial

-

-

-

-

-

-

-

-

-

SRAM

-

-

GS8161E32DGT-250I
GS8161E32DGT-250I

GSI Technology

In Stock

-

-

-

TQFP-100

-

-

-

GSI Technology

-

-

36

-

Parallel

GSI Technology

-

250 MHz

-

-

+ 85 C

SDR

-

- 40 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

-

3.6 V

2.3 V

-

-

NBT SRAM

-

-

-

Tray

GS8161E32DGT

-

-

-

DCD Pipeline/Flow Through

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

18 Mbit

-

-

250 mA, 270 mA

5.5 ns

-

512 k x 32

-

-

-

-

SRAM

-

-

-

-

-

-

-

-

-

-

-

-

-

SRAM

-

-

GS816132DGD-150V
GS816132DGD-150V

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

-

-

SDR

-

-

Parallel

-

-

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2, 2.7 V

+ 85 C

-

1.7, 2.3 V

0 C

-

-

Surface Mount

SMD/SMT

32 Bit

512 kWords

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FBGA

2.7 V

1.7 V

-

Synchronous

-

1.8, 2.5 V

Commercial grade

0 to 85 °C

-

GS816132DGD

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

165

-

-

-

-

-

-

18 Mbit

4

-

175 mA, 190 mA

7.5 ns

Flow-Through/Pipelined

512 k x 32

-

-

-

19 Bit

-

18 Mbit

-

-

Commercial

-

-

-

-

-

-

-

-

-

-

-

-

GS8342T37BGD-333I
GS8342T37BGD-333I

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

DDR

15

-

Parallel

GSI Technology

-

333 MHz

333 MHz

1.9 V

+ 85 C

DDR

1.7 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

1 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaDDR-II+

1.8000 V

Industrial grade

-40 to 100 °C

Tray

GS8342T37BGD

-

-

-

SigmaDDR-II+ B2

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

36 Mbit

1

-

670 mA

-

Pipelined

1 M x 36

-

-

-

19 Bit

SRAM

36 Mbit

-

-

Industrial

-

-

-

-

-

-

-

-

-

SRAM

-

-

GS8162Z36DB-200I
GS8162Z36DB-200I

GSI Technology

In Stock

-

-

10 Weeks

BGA-119

YES

119

6.5 ns

GSI Technology

-

-

21

GSI TECHNOLOGY

Parallel

GSI Technology

GS8162Z36DB-200I

200 MHz

-

-

+ 85 C

SDR

-

- 40 C

Yes

-

-

SMD/SMT

-

524288 words

512000

85 °C

-40 °C

PLASTIC/EPOXY

BGA

BGA,

-

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.25

-

No

-

3.6 V

2.3 V

2.5 V

-

NBT SRAM

-

-

-

Tray

GS8162Z36DB

-

-

3A991.B.2.B

NBT Pipeline/Flow Through

-

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2.7 V

-

INDUSTRIAL

2.3 V

18 Mbit

-

SYNCHRONOUS

230 mA

6.5 ns

-

512 k x 36

-

1.99 mm

36

-

SRAM

-

-

18874368 bit

-

PARALLEL

-

ZBT SRAM

-

-

-

-

-

-

SRAM

22 mm

14 mm

GS882Z18CGB-250
GS882Z18CGB-250

GSI Technology

In Stock

-

-

-

BGA-119

-

-

-

-

-

-

-

-

Parallel

-

-

250 MHz

-

-

+ 70 C

-

-

0 C

-

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

3.6 V

2.3 V

-

-

-

-

-

-

-

GS882Z18CGB

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

9 Mbit

-

-

145 mA, 180 mA

5.5 ns

-

512 k x 18

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

GS8672T19BGE-333
GS8672T19BGE-333

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

-

15

-

Parallel

GSI Technology

-

333 MHz

-

-

+ 70 C

DDR-II

-

0 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

-

1.9 V

1.7 V

-

-

SigmaDDR-II+

-

-

-

Tray

GS8672T19BGE

-

-

-

SigmaDDR-II+ B2

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

72 Mbit

-

-

950 mA

-

-

4 M x 18

-

-

-

-

SRAM

-

-

72

-

-

-

-

-

-

-

-

-

-

SRAM

-

-

GS816236DB-375I
GS816236DB-375I

GSI Technology

In Stock

-

-

10 Weeks

BGA-119

YES

119

4.2 ns

GSI Technology

-

SDR

21

GSI TECHNOLOGY

Parallel

GSI Technology

GS816236DB-375I

375 MHz

-

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

512 kWords

512000

85 °C

-40 °C

PLASTIC/EPOXY

BGA

BGA,

-

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.25

-

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 100 °C

Tray

GS816236DB

-

-

3A991.B.2.B

Pipeline/Flow Through

-

ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

-

2.7 V

-

INDUSTRIAL

2.3 V

18 Mbit

4

SYNCHRONOUS

290 mA, 370 mA

4.2 ns

Flow-Through/Pipelined

512 k x 36

-

1.99 mm

36

-

SRAM

18 Mbit

-

18874368 bit

Industrial

PARALLEL

-

CACHE SRAM

-

-

-

-

-

-

SRAM

22 mm

14 mm

GS8342R18BGD-400
GS8342R18BGD-400

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

DDR

15

-

Parallel

GSI Technology

-

400 MHz

400 MHz

1.9 V

+ 70 C

DDR

1.7 V

0 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

2 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaCIO DDR-II

1.8000 V

Commercial grade

0 to 85 °C

Tray

GS8342R18BGD

-

-

-

SigmaDDR-II B4

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

36 Mbit

1

-

600 mA

-

Pipelined

2 M x 18

-

-

-

21 Bit

SRAM

36 Mbit

-

-

Commercial

-

-

-

-

-

-

-

-

-

SRAM

-

-

GS816136DGT-150
GS816136DGT-150

GSI Technology

In Stock

-

-

10 Weeks

TQFP-100

YES

100

7.5 ns

GSI Technology

-

-

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS816136DGT-150

150 MHz

-

-

+ 70 C

SDR

-

0 C

Yes

-

-

SMD/SMT

-

524288 words

512000

70 °C

-

PLASTIC/EPOXY

QFP

QFP,

-

RECTANGULAR

FLATPACK

Active

QFP

NOT SPECIFIED

5.26

Details

Yes

-

3.6 V

2.3 V

2.5 V

-

SyncBurst

-

-

-

Tray

GS816136DGT

-

-

3A991.B.2.B

Pipeline/Flow Through

-

FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

NOT SPECIFIED

1

-

compliant

100

R-PQFP-G100

-

2.7 V

-

COMMERCIAL

2.3 V

18 Mbit

-

SYNCHRONOUS

180 mA, 190 mA

7.5 ns

-

512 k x 36

-

-

36

-

SRAM

-

-

18874368 bit

-

PARALLEL

-

CACHE SRAM

-

-

-

-

-

-

SRAM

-

-

GS816218DGD-150
GS816218DGD-150

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

-

36

-

Parallel

GSI Technology

-

150 MHz

-

-

+ 70 C

SDR

-

0 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

-

3.6 V

2.3 V

-

-

SyncBurst

-

-

-

Tray

GS816218DGD

-

-

-

Pipeline/Flow Through

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

18 Mbit

-

-

170 mA, 180 mA

7.5 ns

-

1 M x 18

-

-

-

-

SRAM

-

-

-

-

-

-

-

-

-

-

-

-

-

SRAM

-

-

GS881Z36CGT-150
GS881Z36CGT-150

GSI Technology

In Stock

-

-

-

TQFP-100

-

-

-

GSI Technology

-

-

72

-

Parallel

GSI Technology

-

150 MHz

-

-

+ 70 C

SDR

-

0 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

-

3.6 V

2.3 V

-

-

NBT SRAM

-

-

-

Tray

GS881Z36CGT

-

-

-

NBT Pipeline/Flow Through

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

9 Mbit

-

-

130 mA, 140 mA

7.5 ns

-

256 k x 36

-

-

-

-

SRAM

-

-

-

-

-

-

-

-

-

-

-

-

-

SRAM

-

-

GS8672D36BE-400I
GS8672D36BE-400I

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

-

15

-

Parallel

GSI Technology

-

400 MHz

-

-

+ 85 C

QDR-II

-

- 40 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

1.9 V

1.7 V

-

-

SigmaQuad-II

-

-

-

Tray

GS8672D36BE

-

-

-

SigmaQuad-II

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

72 Mbit

-

-

1.88 A

-

-

2 M x 36

-

-

-

-

SRAM

-

-

72

-

-

-

-

-

-

-

-

-

-

SRAM

-

-

93LC56A/SM
93LC56A/SM

Microchip

In Stock

-

-

-

-

YES

8

-

-

2 MHz

-

-

MICROCHIP TECHNOLOGY INC

-

Microchip Technology Inc

93LC56A/SM

-

-

-

-

-

-

-

-

-

-

-

-

256 words

256

70 °C

-

PLASTIC/EPOXY

SOP

SOP, SOP8,.3

SOP8,.3

RECTANGULAR

SMALL OUTLINE

Active

SOIC

40

5.17

-

Yes

-

-

-

3 V

-

-

-

-

-

-

-

e3

Yes

EAR99

-

Matte Tin (Sn)

1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS

8542.32.00.51

EEPROMs

CMOS

DUAL

GULL WING

260

1

1.27 mm

compliant

8

R-PDSO-G8

Not Qualified

6 V

3/5 V

COMMERCIAL

2.5 V

-

-

SYNCHRONOUS

0.0015 mA

-

-

256X8

-

2.03 mm

8

-

-

-

0.000001 A

2048 bit

-

SERIAL

-

EEPROM

MICROWIRE

1000000 Write/Erase Cycles

6 ms

200

SOFTWARE

-

-

5.28 mm

5.2 mm

GS816136DGT-250
GS816136DGT-250

GSI Technology

In Stock

-

-

-

TQFP-100

-

-

-

GSI Technology

-

-

36

-

Parallel

GSI Technology

-

250 MHz

-

-

+ 70 C

SDR

-

0 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

-

3.6 V

2.3 V

-

-

SyncBurst

-

-

-

Tray

GS816136DGT

-

-

-

Pipeline/Flow Through

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

18 Mbit

-

-

230 mA, 250 mA

5.5 ns

-

512 k x 36

-

-

-

-

SRAM

-

-

-

-

-

-

-

-

-

-

-

-

-

SRAM

-

-

GS8160E36DGT-200IV
GS8160E36DGT-200IV

GSI Technology

In Stock

-

-

-

TQFP-100

-

-

-

GSI Technology

-

SDR

18

-

Parallel

GSI Technology

-

200 MHz

200 MHz

2.7, 3.6 V

+ 100 C

SDR

2.3, 3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

512 kWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

TQFP

2.7 V

1.7 V

-

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS8160E36DGT

-

-

-

DCD Synchronous Burst

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

100

-

-

-

-

-

-

18 Mbit

4

-

225 mA, 230 mA

6.5 ns

Flow-Through/Pipelined

512 k x 36

-

-

-

19 Bit

SRAM

18 Mbit

-

-

Industrial

-

-

-

-

-

-

-

-

-

SRAM

-

-

GS8672Q18BE-400I
GS8672Q18BE-400I

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

-

-

-

15

-

Parallel

-

-

400 MHz

-

-

+ 85 C

QDR-II

-

- 40 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

1.9 V

1.7 V

-

-

SigmaQuad-II

-

-

-

Tray

GS8672Q18BE

-

-

-

SigmaQuad-II

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

72 Mbit

-

-

1.38 A

-

-

4 M x 18

-

-

-

-

-

-

-

72

-

-

-

-

-

-

-

-

-

-

-

-

-