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Inventory

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Datasheet

RoHS

Factory Lead Time

Mount

Mounting Type

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Access Time-Max

Brand

Clock Frequency-Max (fCLK)

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Factory Pack QuantityFactory Pack Quantity

Ihs Manufacturer

Interface Type

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Manufacturer Part Number

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Mounting Styles

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Number of Words Code

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Operating Temperature-Min

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Package Description

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Package Style

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Part Package Code

Reflow Temperature-Max (s)

Risk Rank

RoHS

Rohs Code

Supplier Package

Supply Voltage-Max

Supply Voltage-Min

Supply Voltage-Nom (Vsup)

Timing Type

Tradename

Typical Operating Supply Voltage

Usage Level

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Packaging

Published

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

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ECCN Code

Type

Terminal Finish

Additional Feature

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Subcategory

Technology

Voltage - Supply

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Number of Functions

Supply Voltage

Terminal Pitch

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

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Operating Supply Voltage

Supply Voltage-Max (Vsup)

Power Supplies

Temperature Grade

Supply Voltage-Min (Vsup)

Memory Size

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Nominal Supply Current

Operating Mode

Supply Current-Max

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Memory Format

Memory Interface

Architecture

Data Bus Width

Organization

Output Characteristics

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Address Bus Width

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Standby Current-Max

Memory Density

Max Frequency

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I/O Type

Sync/Async

Word Size

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Standby Voltage-Min

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Toggle Bit

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Number of Sectors/Size

Sector Size

Page Size

Ready/Busy

Refresh Cycles

Sequential Burst Length

Interleaved Burst Length

Access Mode

Reverse Pinout

Self Refresh

Product Category

Height Seated (Max)

Length

Width

Radiation Hardening

RoHS Status

IS64WV25616EDBLL-10BLA3
IS64WV25616EDBLL-10BLA3

ISSI, Integrated Silicon Solution Inc

20
Datasheet

10 Weeks

-

Surface Mount

48-TFBGA

YES

48

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Volatile

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Automotive grade

-40°C~125°C TA

Tray

-

-

-

-

Active

3 (168 Hours)

48

-

-

-

-

-

-

-

2.4V~3.6V

BOTTOM

-

-

1

3V

0.75mm

-

-

48

-

-

-

3.6V

2.5/3.3V

-

2.4V

4Mb 256K x 16

1

-

-

-

-

SRAM

Parallel

-

-

-

3-STATE

-

16

10ns

18b

-

4 Mb

-

-

-

-

-

-

COMMON

-

-

-

-

2V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

8mm

-

No

ROHS3 Compliant

AS6C62256A-70SIN
AS6C62256A-70SIN

Alliance Memory, Inc.

5
Datasheet

6 Weeks

-

Surface Mount

28-SOIC (0.330, 8.38mm Width)

YES

28

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Volatile

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-40°C~85°C TA

Tube

2009

-

-

yes

Active

3 (168 Hours)

28

EAR99

-

-

-

-

-

-

4.5V~5.5V

DUAL

-

260

1

5V

-

-

40

28

-

Not Qualified

5V

-

5V

-

-

256Kb 32K x 8

1

-

-

0.07mA

-

SRAM

Parallel

-

-

32KX8

3-STATE

-

8

70ns

15b

-

256 kb

0.000006A

-

14MHz

-

70 ns

-

COMMON

-

-

-

-

2V

-

-

-

-

-

-

-

-

-

-

-

YES

-

-

3.048mm

-

-

-

ROHS3 Compliant

AS7C1024B-15TJCNTR
AS7C1024B-15TJCNTR

Alliance Memory, Inc.

16
Datasheet

8 Weeks

-

Surface Mount

32-TFSOP (0.724, 18.40mm Width)

YES

32

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Volatile

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

0°C~70°C TA

Tape & Reel (TR)

2002

-

e3/e6

yes

Active

3 (168 Hours)

32

-

-

PURE MATTE TIN/TIN BISMUTH

-

-

-

-

4.5V~5.5V

DUAL

-

245

1

5V

1.27mm

-

40

32

-

-

-

5.5V

-

-

4.5V

1Mb 128K x 8

-

-

-

-

-

SRAM

Parallel

-

-

128KX8

-

-

8

15ns

-

-

-

-

1048576 bit

-

-

15 ns

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

3.683mm

20.995mm

7.62mm

-

ROHS3 Compliant

S34ML04G100TFI003
S34ML04G100TFI003

Cypress Semiconductor Corp

4500

-

-

99 Weeks

Surface Mount

Surface Mount

48-TFSOP (0.724, 18.40mm Width)

-

48

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-Volatile

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-40°C~85°C TA

Tape & Reel (TR)

2014

ML-1

e3

-

Discontinued

3 (168 Hours)

48

-

-

Matte Tin (Sn)

-

8542.32.00.51

-

-

2.7V~3.6V

DUAL

-

-

1

3.3V

0.5mm

-

-

-

-

-

3.3V

3.6V

-

-

2.7V

4Gb 512M x 8

-

30mA

-

-

20 ns

FLASH

Parallel

-

8b

512MX8

-

-

8

25ns

30b

-

4 Gb

0.00005A

-

-

-

-

-

-

Asynchronous

8b

-

3V

-

NO

NO

YES

4K

128K

2kB

YES

-

-

-

-

-

-

-

1.2mm

18.4mm

-

No

ROHS3 Compliant

GS832236AGB-150I
GS832236AGB-150I

GSI Technology

In Stock

-

-

8 Weeks

-

-

BGA-119

YES

-

119

7.5 ns

GSI Technology

150 MHz

SDR

14

GSI TECHNOLOGY

Parallel

GSI Technology

GS832236AGB-150I

150 MHz

133@Flow-Through/150@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

3

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

85 °C

-40 °C

PLASTIC/EPOXY

BGA

BGA, BGA119,7X17,50

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.12

Details

Yes

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 100 °C

Tray

-

GS832236AGB

e1

Yes

-

-

-

3A991.B.2.B

Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

-

BOTTOM

BALL

260

1

-

1.27 mm

compliant

-

119

R-PBGA-B119

Not Qualified

-

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

36 Mbit

4

-

SYNCHRONOUS

210 mA, 220 mA

7.5 ns

-

-

Flow-Through/Pipelined

-

1 M x 36

3-STATE

1.99 mm

36

-

20 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

-

Industrial

-

PARALLEL

COMMON

-

-

CACHE SRAM

-

2.3 V

-

-

-

-

-

-

-

-

-

-

-

-

-

SRAM

-

22 mm

14 mm

-

-

GS8342TT07BD-300I
GS8342TT07BD-300I

GSI Technology

In Stock

-

-

10 Weeks

-

-

BGA-165

YES

-

165

0.45 ns

GSI Technology

300 MHz

DDR

15

GSI TECHNOLOGY

Parallel

GSI Technology

GS8342TT07BD-300I

300 MHz

300 MHz

1.9 V

+ 85 C

DDR

1.7 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

8 Bit

4 MWords

4000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.36

-

No

FBGA

1.9 V

1.7 V

1.8 V

Synchronous

SigmaDDR-II+

1.8000 V

Industrial grade

-40 to 100 °C

Tray

-

GS8342TT07BD

e0

-

-

-

-

3A991.B.2.B

SigmaDDR-II+ B2

Tin/Lead (Sn/Pb)

PIPELINED ARCHITECTURE, LATE WRITE

8542.32.00.41

Memory & Data Storage

CMOS

-

BOTTOM

BALL

NOT SPECIFIED

1

-

1 mm

compliant

-

165

R-PBGA-B165

Not Qualified

-

1.9 V

1.5/1.8,1.8 V

INDUSTRIAL

1.7 V

36 Mbit

1

-

SYNCHRONOUS

460 mA

-

-

-

Pipelined

-

4 M x 8

3-STATE

1.4 mm

8

-

21 Bit

SRAM

36 Mbit

-

33554432 bit

-

Industrial

-

PARALLEL

COMMON

-

-

DDR SRAM

-

1.7 V

-

-

-

-

-

-

-

-

-

-

-

-

-

SRAM

-

15 mm

13 mm

-

-

GS816236DB-150
GS816236DB-150

GSI Technology

In Stock

-

-

-

-

-

BGA-119

-

-

-

-

GSI Technology

-

SDR

21

-

Parallel

GSI Technology

-

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

512 kWords

-

-

-

-

-

-

-

-

-

-

-

-

-

N

-

FBGA

3.6 V

2.3 V

-

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 85 °C

Tray

-

GS816236DB

-

-

-

-

-

-

Pipeline/Flow Through

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

119

-

-

-

-

-

-

-

18 Mbit

4

-

-

180 mA, 190 mA

7.5 ns

-

-

Flow-Through/Pipelined

-

512 k x 36

-

-

-

-

19 Bit

SRAM

18 Mbit

-

-

-

Commercial

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

SRAM

-

-

-

-

-

GS8162Z18DD-200I
GS8162Z18DD-200I

GSI Technology

In Stock

-

-

-

-

-

BGA-165

-

-

-

-

GSI Technology

-

SDR

36

-

Parallel

GSI Technology

-

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

1 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FBGA

3.6 V

2.3 V

-

Synchronous

NBT SRAM

2.5, 3.3 V

Industrial grade

-40 to 100 °C

Tray

-

GS8162Z18DD

-

-

-

-

-

-

NBT Pipeline/Flow Through

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

165

-

-

-

-

-

-

-

18 Mbit

2

-

-

215 mA

6.5 ns

-

-

Flow-Through/Pipelined

-

1 M x 18

-

-

-

-

20 Bit

SRAM

18 Mbit

-

-

-

Industrial

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

SRAM

-

-

-

-

-

GS8182D09BGD-250
GS8182D09BGD-250

GSI Technology

In Stock

-

-

-

-

-

BGA-165

-

-

-

-

GSI Technology

-

-

18

-

Parallel

GSI Technology

-

250 MHz

-

-

+ 70 C

DDR

-

0 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

-

1.9 V

1.7 V

-

-

SigmaQuad-II

-

-

-

Tray

-

GS8182D09BGD

-

-

-

-

-

-

SigmaQuad-II

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

18 Mbit

-

-

-

420 mA

-

-

-

-

-

2 M x 9

-

-

-

-

-

SRAM

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

SRAM

-

-

-

-

-

GS8672T36BGE-333I
GS8672T36BGE-333I

GSI Technology

In Stock

-

-

-

-

-

BGA-165

-

-

-

-

GSI Technology

-

-

15

-

Parallel

GSI Technology

-

333 MHz

-

-

+ 85 C

DDR-II

-

- 40 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

-

1.9 V

1.7 V

-

-

SigmaDDR-II

-

-

-

Tray

-

GS8672T36BGE

-

-

-

-

-

-

SigmaDDR-II

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

72 Mbit

-

-

-

1.28 A

-

-

-

-

-

2 M x 36

-

-

-

-

-

SRAM

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

SRAM

-

-

-

-

-

GS8321Z36AD-200
GS8321Z36AD-200

GSI Technology

In Stock

-

-

-

-

-

BGA-165

-

-

-

-

-

-

SDR

-

-

Parallel

-

-

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2.7, 3.6 V

+ 70 C

-

2.3, 3 V

0 C

-

-

Surface Mount

SMD/SMT

36 Bit

1 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FBGA

3.6 V

2.3 V

-

Synchronous

-

2.5, 3.3 V

Commercial grade

0 to 85 °C

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

165

-

-

-

-

-

-

-

36 Mbit

4

-

-

205 mA, 240 mA

6.5 ns

-

-

Flow-Through/Pipelined

-

1 M x 36

-

-

-

-

20 Bit

-

36 Mbit

-

-

-

Commercial

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

GS8161E36DGD-200
GS8161E36DGD-200

GSI Technology

In Stock

-

-

-

-

-

BGA-165

-

-

-

-

GSI Technology

-

-

36

-

Parallel

GSI Technology

-

200 MHz

-

-

+ 70 C

SDR

-

0 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

-

3.6 V

2.3 V

-

-

SyncBurst

-

-

-

Tray

-

GS8161E36DGD

-

-

-

-

-

-

DCD Pipeline/Flow Through

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

18 Mbit

-

-

-

210 mA

6.5 ns

-

-

-

-

512 k x 36

-

-

-

-

-

SRAM

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

SRAM

-

-

-

-

-

GS8321Z36AGD-250
GS8321Z36AGD-250

GSI Technology

In Stock

-

-

-

-

-

BGA-165

-

-

-

-

GSI Technology

-

SDR

18

-

Parallel

GSI Technology

-

250 MHz

-

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

1 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

3.6 V

2.3 V

-

Synchronous

NBT SRAM

2.5, 3.3 V

Commercial grade

0 to 85 °C

Tray

-

GS8321Z36AGD

-

-

-

-

-

-

NBT

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

165

-

-

-

-

-

-

-

36 Mbit

4

-

-

230 mA, 285 mA

5.5 ns

-

-

Flow-Through/Pipelined

-

1 M x 36

-

-

-

-

-

SRAM

36 Mbit

-

-

-

Commercial

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

SRAM

-

-

-

-

-

GS8342T09BD-300
GS8342T09BD-300

GSI Technology

In Stock

-

-

10 Weeks

-

-

BGA-165

YES

-

165

0.45 ns

GSI Technology

300 MHz

DDR

15

GSI TECHNOLOGY

Parallel

GSI Technology

GS8342T09BD-300

300 MHz

300 MHz

-

+ 70 C

DDR

-

0 C

Yes

-

Surface Mount

SMD/SMT

9 Bit

4 MWords

4000000

70 °C

-

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.36

N

No

FBGA

1.9 V

1.7 V

1.8 V

Synchronous

SigmaDDR-II

1.8000 V

Commercial grade

0 to 85 °C

Tray

-

GS8342T09BD

-

-

-

-

-

3A991.B.2.B

SigmaDDR-II B2

-

PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

-

BOTTOM

BALL

NOT SPECIFIED

1

-

1 mm

compliant

-

165

R-PBGA-B165

Not Qualified

-

1.9 V

1.5/1.8,1.8 V

COMMERCIAL

1.7 V

36 Mbit

1

-

SYNCHRONOUS

450 mA

-

-

-

Pipelined

-

4 M x 9

3-STATE

1.4 mm

9

-

21 Bit

SRAM

36 Mbit

0.185 A

37748736 bit

-

Commercial

-

PARALLEL

COMMON

-

-

DDR SRAM

-

1.7 V

-

-

-

-

-

-

-

-

-

-

-

-

-

SRAM

-

15 mm

13 mm

-

-

GS864436E-200I
GS864436E-200I

GSI Technology

In Stock

-

-

-

-

-

BGA-165

-

-

-

-

GSI Technology

-

SDR

15

-

Parallel

GSI Technology

-

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

2 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FBGA

3.6 V

2.3 V

-

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

-

GS864436E

-

-

-

-

-

-

Synchronous Burst

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

165

-

-

-

-

-

-

-

72 Mbit

4

-

-

295 mA, 380 mA

6.5 ns

-

-

Flow-Through/Pipelined

-

2 M x 36

-

-

-

-

21 Bit

SRAM

72 Mbit

-

-

-

Industrial

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

SRAM

-

-

-

-

-

W949D6CBHX6E
W949D6CBHX6E

Winbond Electronics Corporation

In Stock

-

-

-

-

-

-

YES

-

60

5 ns

-

166 MHz

-

-

WINBOND ELECTRONICS CORP

-

Winbond Electronics Corp

W949D6CBHX6E

-

-

-

-

-

-

-

-

-

-

-

-

33554432 words

32000000

85 °C

-25 °C

PLASTIC/EPOXY

TFBGA

8 X 9 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-60

BGA60,9X10,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

Active

BGA

NOT SPECIFIED

5.37

-

Yes

-

-

-

1.8 V

-

-

-

-

-

-

-

-

-

-

-

-

-

EAR99

-

-

AUTO/SELF REFRESH

8542.32.00.28

DRAMs

CMOS

-

BOTTOM

BALL

NOT SPECIFIED

1

-

0.8 mm

compliant

-

60

R-PBGA-B60

Not Qualified

-

1.95 V

1.8 V

OTHER

1.7 V

-

1

-

SYNCHRONOUS

0.075 mA

-

-

-

-

-

32MX16

3-STATE

1.025 mm

16

-

-

-

-

0.00001 A

536870912 bit

-

-

-

-

COMMON

-

-

DDR DRAM

-

-

-

-

-

-

-

-

-

8192

2,4,8,16

2,4,8,16

FOUR BANK PAGE BURST

-

YES

-

-

9 mm

8 mm

-

-

GS881E18CGT-150
GS881E18CGT-150

GSI Technology

In Stock

-

-

-

-

-

TQFP-100

-

-

-

-

GSI Technology

-

-

72

-

Parallel

GSI Technology

-

150 MHz

-

-

+ 70 C

SDR

-

0 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

-

3.6 V

2.3 V

-

-

SyncBurst

-

-

-

Tray

-

GS881E18CGT

-

-

-

-

-

-

DCD Pipeline/Flow Through

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

9 Mbit

-

-

-

120 mA, 130 mA

7.5 ns

-

-

-

-

512 k x 18

-

-

-

-

-

SRAM

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

SRAM

-

-

-

-

-

GS8322Z36AD-250I
GS8322Z36AD-250I

GSI Technology

In Stock

-

-

3 Weeks

-

-

BGA-165

YES

-

165

5.5 ns

GSI Technology

250 MHz

SDR

14

GSI TECHNOLOGY

Parallel

GSI Technology

GS8322Z36AD-250I

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.12

-

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

Industrial grade

-40 to 100 °C

Tray

-

GS8322Z36AD

e0

No

-

-

-

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

-

BOTTOM

BALL

NOT SPECIFIED

1

-

1 mm

compliant

-

165

R-PBGA-B165

Not Qualified

-

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

36 Mbit

4

-

SYNCHRONOUS

250 mA, 305 mA

5.5 ns

-

-

Flow-Through/Pipelined

-

1 M x 36

3-STATE

1.4 mm

36

-

20 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

-

Industrial

-

PARALLEL

COMMON

-

-

ZBT SRAM

-

2.3 V

-

-

-

-

-

-

-

-

-

-

-

-

-

SRAM

-

15 mm

13 mm

-

-

GS8182D37BD-400
GS8182D37BD-400

GSI Technology

In Stock

-

-

-

-

-

BGA-165

-

-

-

-

GSI Technology

-

-

18

-

Parallel

GSI Technology

-

400 MHz

-

-

+ 70 C

DDR

-

0 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

N

-

-

1.9 V

1.7 V

-

-

SigmaQuad-II+

-

-

-

Tray

-

GS8182D37BD

-

-

-

-

-

-

SigmaQuad II+

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

18 Mbit

-

-

-

670 mA

-

-

-

-

-

512 k x 36

-

-

-

-

-

SRAM

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

SRAM

-

-

-

-

-

GS816118DGD-150
GS816118DGD-150

GSI Technology

In Stock

-

-

-

-

-

BGA-165

-

-

-

-

GSI Technology

-

-

36

-

Parallel

GSI Technology

-

150 MHz

-

-

+ 70 C

SDR

-

0 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

-

3.6 V

2.3 V

-

-

SyncBurst

-

-

-

Tray

-

GS816118DGD

-

-

-

-

-

-

Pipeline/Flow Through

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

18 Mbit

-

-

-

170 mA, 180 mA

7.5 ns

-

-

-

-

1 M x 18

-

-

-

-

-

SRAM

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

SRAM

-

-

-

-

-

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