-

10 Weeks

BGA-165

YES

165

0.45 ns

GSI Technology

300 MHz

QDR

15

GSI TECHNOLOGY

Parallel

GSI Technology

GS8342Q36BGD-300I

300 MHz

300 MHz

1.9 V

+ 85 C

DDR

1.7 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.37

Details

Yes

FBGA

1.9 V

1.7 V

1.8 V

Synchronous

SigmaQuad-II

1.8000 V

Industrial grade

-40 to 100 °C

Tray

GS8342Q36BGD

-

-

3A991.B.2.B

SigmaQuad-II

-

PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

1.9 V

1.5/1.8,1.8 V

INDUSTRIAL

1.7 V

36 Mbit

2

SYNCHRONOUS

980 mA

-

Pipelined

1 M x 36

3-STATE

1.4 mm

36

19 Bit

SRAM

36 Mbit

0.235 A

37748736 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

SRAM

15 mm

13 mm

-

-

BGA-165

-

-

-

GSI Technology

-

-

36

-

Parallel

GSI Technology

-

250 MHz

-

-

+ 85 C

SDR

-

- 40 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

3.6 V

2.3 V

-

-

SyncBurst

-

-

-

Tray

GS816218DD

-

-

-

Pipeline/Flow Through

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

18 Mbit

-

-

230 mA, 250 mA

5.5 ns

-

1 M x 18

-

-

-

-

SRAM

-

-

-

-

-

-

-

-

SRAM

-

-

-

8 Weeks

BGA-119

YES

119

7.5 ns

-

150 MHz

SDR

-

GSI TECHNOLOGY

Parallel

GSI Technology

GS832218AB-150

150 MHz

133@Flow-Through/150@Pipelined MHz

2.7, 3.6 V

+ 70 C

-

2.3, 3 V

0 C

-

-

Surface Mount

SMD/SMT

18 Bit

2 MWords

2000000

70 °C

-

PLASTIC/EPOXY

BGA

BGA, BGA119,7X17,50

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.11

-

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

-

2.5, 3.3 V

Commercial grade

0 to 85 °C

-

-

e0

No

3A991.B.2.B

-

Tin/Lead (Sn/Pb)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2.7 V

2.5/3.3 V

COMMERCIAL

2.3 V

36 Mbit

2

SYNCHRONOUS

175 mA, 190 mA

7.5 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.99 mm

18

21 Bit

-

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

CACHE SRAM

2.3 V

-

22 mm

14 mm

-

-

TQFP-100

-

-

-

GSI Technology

-

SDR

18

-

Parallel

GSI Technology

-

200 MHz

200 MHz

2, 2.7 V

+ 100 C

SDR

1.7, 2.3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

1 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

TQFP

2.7 V

1.7 V

-

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 85 °C

Tray

GS8160E18DGT

-

-

-

DCD Synchronous Burst

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

100

-

-

-

-

-

-

18 Mbit

2

-

210 mA, 215 mA

6.5 ns

-

1 M x 18

-

-

-

-

SRAM

18 Mbit

-

-

Industrial

-

-

-

-

SRAM

-

-

-

8 Weeks

BGA-165

YES

165

0.5 ns

GSI Technology

-

-

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS8182Q18BGD-133

133 MHz

-

-

+ 70 C

DDR

-

0 C

Yes

3

-

SMD/SMT

-

1048576 words

1000000

70 °C

-

PLASTIC/EPOXY

LBGA

LBGA,

-

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.19

Details

Yes

-

1.9 V

1.7 V

1.8 V

-

SigmaQuad-II

-

-

-

Tray

GS8182Q18BGD

e1

Yes

3A991.B.2.B

SigmaQuad-II

Tin/Silver/Copper (Sn/Ag/Cu)

PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

1.9 V

-

COMMERCIAL

1.7 V

18 Mbit

-

SYNCHRONOUS

375 mA

-

-

1 M x 18

-

1.4 mm

18

-

SRAM

-

-

18874368 bit

-

PARALLEL

-

DDR SRAM

-

SRAM

15 mm

13 mm

-

8 Weeks

TQFP-100

YES

100

5 ns

GSI Technology

300 MHz

SDR

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS88018CGT-300I

300 MHz

200@Flow-Through/300@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

3

Surface Mount

SMD/SMT

18 Bit

512 kWords

512000

85 °C

-40 °C

PLASTIC/EPOXY

LQFP

LQFP, QFP100,.63X.87

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.3

Details

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS88018CGT

e3

Yes

3A991.B.2.B

Pipeline/Flow Through

PURE MATTE TIN

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

9 Mbit

2

SYNCHRONOUS

170 mA, 225 mA

5 ns

Flow-Through/Pipelined

512 k x 18

3-STATE

1.6 mm

18

19 Bit

SRAM

9 Mbit

0.045 A

9437184 bit

Industrial

PARALLEL

COMMON

CACHE SRAM

2.3 V

SRAM

20 mm

14 mm

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

10 Weeks

BGA-165

YES

165

0.45 ns

GSI Technology

400 MHz

QDR

15

GSI TECHNOLOGY

Parallel

GSI Technology

GS8342D06BD-400I

400 MHz

400 MHz

1.9 V

+ 85 C

DDR

1.7 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

8 Bit

4 MWords

4000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

-

5.22

-

No

FBGA

1.9 V

1.7 V

1.8 V

Synchronous

SigmaQuad-II+

1.8000 V

Industrial grade

-40 to 100 °C

Tray

GS8342D06BD

-

-

3A991.B.2.B

SigmaQuad-II+

-

PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

-

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

1.9 V

1.5/1.8,1.8 V

INDUSTRIAL

1.7 V

36 Mbit

2

SYNCHRONOUS

715 mA

-

Pipelined

4 M x 8

3-STATE

1.4 mm

8

20 Bit

SRAM

36 Mbit

0.235 A

33554432 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

SRAM

15 mm

13 mm

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

8 Weeks

BGA-165

YES

165

-

GSI Technology

-

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS8321Z18AGD-250

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

3

Surface Mount

SMD/SMT

18 Bit

2 MWords

2000000

85 °C

-

PLASTIC/EPOXY

LBGA

LBGA,

-

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.3

Details

Yes

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

Commercial grade

0 to 85 °C

Tray

GS8321Z18AGD

e1

Yes

3A991.B.2.B

NBT

Tin/Silver/Copper (Sn/Ag/Cu)

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

-

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

-

OTHER

2.3 V

36 Mbit

2

SYNCHRONOUS

215 mA, 255 mA

5.5 ns

Flow-Through/Pipelined

2 M x 18

-

1.4 mm

18

21 Bit

SRAM

36 Mbit

-

37748736 bit

Commercial

PARALLEL

-

ZBT SRAM

-

SRAM

15 mm

13 mm

-

-

TQFP-100

-

-

-

-

-

-

-

-

Parallel

-

-

-

-

-

+ 85 C

-

-

- 40 C

-

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

3.6 V

2.3 V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

9 Mbit

-

-

170 mA

5 ns

-

512 k x 18

-

-

-

-

-

-

-

9

-

-

-

-

-

-

-

-

-

-

BGA-165

-

-

-

GSI Technology

-

-

15

-

Parallel

GSI Technology

-

300 MHz

-

-

+ 85 C

DDR-II

-

- 40 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

-

1.9 V

1.7 V

-

-

SigmaDDR-II+

-

-

-

Tray

GS8672T37BGE

-

-

-

SigmaDDR-II+ B2

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

72 Mbit

-

-

1.2 A

-

-

2 M x 36

-

-

-

-

SRAM

-

-

72

-

-

-

-

-

SRAM

-

-

-

-

TQFP-100

-

-

-

GSI Technology

-

-

72

-

Parallel

GSI Technology

-

150 MHz

-

-

+ 85 C

SDR

-

- 40 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

-

3.6 V

2.3 V

-

-

NBT SRAM

-

-

-

Tray

GS881Z32CGT

-

-

-

NBT Pipeline/Flow Through

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

9 Mbit

-

-

150 mA, 160 mA

7.5 ns

-

256 k x 32

-

-

-

-

SRAM

-

-

-

-

-

-

-

-

SRAM

-

-

-

-

TQFP-100

-

-

-

GSI Technology

-

-

72

-

Parallel

GSI Technology

-

200 MHz

-

-

+ 85 C

SDR

-

- 40 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

-

3.6 V

2.3 V

-

-

NBT SRAM

-

-

-

Tray

GS881Z32CGT

-

-

-

NBT Pipeline/Flow Through

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

9 Mbit

-

-

160 mA, 190 mA

6.5 ns

-

256 k x 32

-

-

-

-

SRAM

-

-

-

-

-

-

-

-

SRAM

-

-

-

-

BGA-165

-

-

-

GSI Technology

-

DDR

15

-

Parallel

GSI Technology

-

350 MHz

350 MHz

1.9 V

+ 70 C

DDR

1.7 V

0 C

Yes

-

Surface Mount

SMD/SMT

8 Bit

4 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaDDR-II+

1.8000 V

Commercial grade

0 to 85 °C

Tray

GS8342T06BGD

-

-

-

SigmaQuad-II+

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

36 Mbit

1

-

565 mA

-

Pipelined

4 M x 8

-

-

-

21 Bit

SRAM

36 Mbit

-

-

Commercial

-

-

-

-

SRAM

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BGA-119

-

-

-

GSI Technology

-

-

21

-

Parallel

GSI Technology

-

150 MHz

-

-

+ 85 C

SDR

-

- 40 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

-

3.6 V

2.3 V

-

-

SyncBurst

-

-

-

Tray

GS816236DGB

-

-

-

Pipeline/Flow Through

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

18 Mbit

-

-

200 mA, 210 mA

7.5 ns

-

512 k x 36

-

-

-

-

SRAM

-

-

-

-

-

-

-

-

SRAM

-

-

-

10 Weeks

TQFP-100

YES

100

5.5 ns

-

-

SDR

-

GSI TECHNOLOGY

Parallel

GSI Technology

GS816032DGT-250IV

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2, 2.7 V

+ 85 C

-

1.7, 2.3 V

- 40 C

-

-

Surface Mount

SMD/SMT

32 Bit

512 kWords

512000

85 °C

-40 °C

PLASTIC/EPOXY

LQFP

LQFP,

-

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.34

-

Yes

TQFP

3.6 V

2.3 V

1.8 V

Synchronous

-

1.8, 2.5 V

Industrial grade

-40 to 100 °C

-

GS816032DGT

-

-

3A991.B.2.B

-

-

ALSO OPERATES AT 2.5V

8542.32.00.41

-

CMOS

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

100

R-PQFP-G100

-

2 V

-

INDUSTRIAL

1.7 V

18 Mbit

4

SYNCHRONOUS

250 mA, 270 mA

5.5 ns

Flow-Through/Pipelined

512 k x 32

-

1.6 mm

32

20 Bit

-

18 Mbit

-

16777216 bit

Industrial

PARALLEL

-

CACHE SRAM

-

-

20 mm

14 mm

-

-

BGA-119

-

-

-

GSI Technology

-

-

84

-

Parallel

GSI Technology

-

150 MHz

-

-

+ 85 C

SDR

-

- 40 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

3.6 V

2.3 V

-

-

NBT SRAM

-

-

-

Tray

GS842Z36CB

-

-

-

NBT Pipeline/Flow Through

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

4 Mbit

-

-

150 mA, 160 mA

7.5 ns

-

128 k x 36

-

-

-

-

SRAM

-

-

-

-

-

-

-

-

SRAM

-

-

-

-

BGA-165

-

-

-

GSI Technology

-

-

18

-

Parallel

GSI Technology

-

133 MHz

-

-

+ 70 C

DDR

-

0 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

N

-

-

1.9 V

1.7 V

-

-

SigmaQuad-II

-

-

-

Tray

GS8182Q08BD

-

-

-

SigmaQuad-II

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

18 Mbit

-

-

375 mA

-

-

2 M x 8

-

-

-

-

SRAM

-

-

-

-

-

-

-

-

SRAM

-

-