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  • Moisture Sensitivity Level (MSL)

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Memory

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Factory Pack QuantityFactory Pack Quantity

Ihs Manufacturer

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Manufacturer Part Number

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Moisture Sensitivity Levels

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Part Package Code

Reflow Temperature-Max (s)

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RoHS

Rohs Code

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Supply Voltage-Min

Supply Voltage-Nom (Vsup)

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Tradename

Typical Operating Supply Voltage

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Technology

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Number of Functions

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JESD-30 Code

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Supply Voltage-Max (Vsup)

Power Supplies

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Supply Voltage-Min (Vsup)

Memory Size

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Access Time

Architecture

Organization

Output Characteristics

Seated Height-Max

Memory Width

Address Bus Width

Product Type

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Standby Current-Max

Memory Density

Screening Level

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Memory IC Type

Serial Bus Type

Write Cycle Time-Max (tWC)

Standby Voltage-Min

Product Category

Length

Width

GS8182Q09BD-333I
GS8182Q09BD-333I

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

QDR

18

-

Parallel

GSI Technology

-

333 MHz

333 MHz

1.9 V

+ 85 C

DDR

1.7 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

9 Bit

2 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

1.9 V

1.7 V

-

Synchronous

SigmaQuad-II

1.8000 V

Industrial grade

-40 to 85 °C

Tray

GS8182Q09BD

-

-

-

SigmaQuad-II

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

18 Mbit

2

-

870 mA

-

Pipelined

2 M x 9

-

-

-

20 Bit

SRAM

18 Mbit

-

-

Industrial

-

-

-

-

-

-

SRAM

-

-

GS8342T19BD-333I
GS8342T19BD-333I

GSI Technology

In Stock

-

-

10 Weeks

BGA-165

YES

165

0.45 ns

GSI Technology

333 MHz

DDR

15

GSI TECHNOLOGY

Parallel

GSI Technology

GS8342T19BD-333I

333 MHz

333 MHz

1.9 V

+ 85 C

DDR

1.7 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

2 MWords

2000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.36

-

No

FBGA

1.9 V

1.7 V

1.8 V

Synchronous

SigmaDDR-II+

1.8000 V

Industrial grade

-40 to 100 °C

Tray

GS8342T19BD

e0

-

3A991.B.2.B

SigmaDDR-II+ B2

Tin/Lead (Sn/Pb)

PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

1.9 V

1.5/1.8,1.8 V

INDUSTRIAL

1.7 V

36 Mbit

1

SYNCHRONOUS

525 mA

-

Pipelined

2 M x 18

3-STATE

1.4 mm

18

20 Bit

SRAM

36 Mbit

0.205 A

37748736 bit

Industrial

PARALLEL

COMMON

DDR SRAM

-

-

1.7 V

SRAM

15 mm

13 mm

GS8182Q09BGD-200
GS8182Q09BGD-200

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

-

18

-

Parallel

GSI Technology

-

200 MHz

-

-

+ 70 C

DDR

-

0 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

-

1.9 V

1.7 V

-

-

SigmaQuad-II

-

-

-

Tray

GS8182Q09BGD

-

-

-

SigmaQuad-II

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

18 Mbit

-

-

500 mA

-

-

2 M x 9

-

-

-

-

SRAM

-

-

-

-

-

-

-

-

-

-

SRAM

-

-

GS8182D18BGD-333
GS8182D18BGD-333

GSI Technology

In Stock

-

-

8 Weeks

BGA-165

YES

165

0.45 ns

GSI Technology

-

-

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS8182D18BGD-333

333 MHz

-

-

+ 70 C

DDR

-

0 C

Yes

3

-

SMD/SMT

-

1048576 words

1000000

70 °C

-

PLASTIC/EPOXY

LBGA

LBGA,

-

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.18

Details

Yes

-

1.9 V

1.7 V

1.8 V

-

SigmaQuad-II

-

-

-

Tray

GS8182D18BGD

e1

Yes

3A991.B.2.B

SigmaQuad-II

Tin/Silver/Copper (Sn/Ag/Cu)

PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

1.9 V

-

COMMERCIAL

1.7 V

18 Mbit

-

SYNCHRONOUS

515 mA

-

-

1 M x 18

-

1.4 mm

18

-

SRAM

-

-

18874368 bit

-

PARALLEL

-

DDR SRAM

-

-

-

SRAM

15 mm

13 mm

25AA320ISNG
25AA320ISNG

Microchip

In Stock

-

-

-

-

YES

8

-

-

1 MHz

-

-

MICROCHIP TECHNOLOGY INC

-

Microchip Technology Inc

25AA320-I/SNG

-

-

-

-

-

-

-

-

1

-

-

-

4096 words

4000

85 °C

-40 °C

PLASTIC/EPOXY

SOP

3.90 MM, ROHS COMPLIANT, PLASTIC, SOIC-8

-

RECTANGULAR

SMALL OUTLINE

Not Recommended

SOIC

40

5.25

-

Yes

-

-

-

2.5 V

-

-

-

-

-

-

-

e3

Yes

EAR99

-

Matte Tin (Sn)

-

8542.32.00.51

-

CMOS

DUAL

GULL WING

260

1

1.27 mm

compliant

8

R-PDSO-G8

Not Qualified

5.5 V

-

INDUSTRIAL

1.8 V

-

-

SYNCHRONOUS

-

-

-

4KX8

-

1.75 mm

8

-

-

-

-

32768 bit

-

SERIAL

-

EEPROM

SPI

5 ms

-

-

4.9 mm

3.9 mm

GS8342D19BD-350
GS8342D19BD-350

GSI Technology

In Stock

-

-

10 Weeks

BGA-165

YES

165

0.45 ns

GSI Technology

350 MHz

QDR

15

GSI TECHNOLOGY

Parallel

GSI Technology

GS8342D19BD-350

350 MHz

350 MHz

1.9 V

+ 70 C

DDR

1.7 V

0 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

2 MWords

2000000

70 °C

-

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.22

N

No

FBGA

1.9 V

1.7 V

1.8 V

Synchronous

SigmaQuad-II+

1.8000 V

Commercial grade

0 to 85 °C

Tray

GS8342D19BD

-

-

3A991.B.2.B

SigmaQuad-II+ B4

-

PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

1.9 V

1.5/1.8,1.8 V

COMMERCIAL

1.7 V

36 Mbit

2

SYNCHRONOUS

665 mA

-

Pipelined

2 M x 18

3-STATE

1.4 mm

18

19 Bit

SRAM

36 Mbit

0.22 A

37748736 bit

Commercial

PARALLEL

SEPARATE

QDR SRAM

-

-

1.7 V

SRAM

15 mm

13 mm

GS8342DT11BD-350I
GS8342DT11BD-350I

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

-

15

-

Parallel

GSI Technology

-

350 MHz

350 MHz

1.9 V

+ 85 C

DDR

1.7 V

- 40 C

Yes

-

-

SMD/SMT

9 Bit

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

1.9 V

1.7 V

-

Synchronous

SigmaQuad-II+

1.8000 V

-

-40 to 100 °C

Tray

GS8342DT11BD

-

-

-

SigmaQuad-II+

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

36 Mbit

-

-

675 mA

0.45

-

4 M x 9

-

-

-

-

SRAM

-

-

36

-

-

-

-

-

-

-

SRAM

-

-

GS8672D19BE-450
GS8672D19BE-450

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

-

15

-

Parallel

GSI Technology

-

450 MHz

-

-

+ 70 C

QDR-II

-

0 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

N

-

-

1.9 V

1.7 V

-

-

SigmaQuad-II+

-

-

-

Tray

GS8672D19BE

-

-

-

SigmaQuad-II+

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

72 Mbit

-

-

1.49 A

-

-

4 M x 18

-

-

-

-

SRAM

-

-

72

-

-

-

-

-

-

-

SRAM

-

-

25AA640X-I/STG
25AA640X-I/STG

Microchip

In Stock

-

-

-

-

YES

8

-

-

1 MHz

-

-

MICROCHIP TECHNOLOGY INC

-

Microchip Technology Inc

25AA640X-I/STG

-

-

-

-

-

-

-

-

1

-

-

-

8192 words

8000

85 °C

-40 °C

PLASTIC/EPOXY

TSSOP

4.40 MM, PLASTIC, TSSOP-8

-

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Not Recommended

SOIC

40

5.3

-

Yes

-

-

-

2.5 V

-

-

-

-

-

-

-

e3

Yes

EAR99

-

MATTE TIN

-

8542.32.00.51

-

CMOS

DUAL

GULL WING

260

1

0.65 mm

compliant

8

R-PDSO-G8

Not Qualified

5.5 V

-

INDUSTRIAL

1.8 V

-

-

SYNCHRONOUS

-

-

-

8KX8

-

1.2 mm

8

-

-

-

-

65536 bit

-

SERIAL

-

EEPROM

SPI

5 ms

-

-

4.4 mm

3 mm

GS816236DGB-400
GS816236DGB-400

GSI Technology

In Stock

-

-

-

BGA-119

-

-

-

GSI Technology

-

-

21

-

Parallel

GSI Technology

-

400 MHz

250@Flow-Through/400@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

-

-

SMD/SMT

36 Bit

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

3.6 V

2.3 V

-

Synchronous

SyncBurst

2.5, 3.3 V

-

0 to 85 °C

Tray

GS816236DGB

-

-

-

Pipeline/Flow Through

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

119

-

-

-

-

-

-

18 Mbit

-

-

280 mA, 365 mA

4@Flow-Through/2.5@P

-

512 k x 36

-

-

-

19 Bit

SRAM

-

-

18

-

-

-

-

-

-

-

SRAM

-

-

GS8342D37BD-300
GS8342D37BD-300

GSI Technology

In Stock

-

-

10 Weeks

BGA-165

YES

165

0.45 ns

GSI Technology

300 MHz

QDR

15

GSI TECHNOLOGY

Parallel

GSI Technology

GS8342D37BD-300

300 MHz

300 MHz

-

+ 70 C

DDR

-

0 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

70 °C

-

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.36

N

No

FBGA

1.9 V

1.7 V

1.8 V

Synchronous

SigmaQuad-II+

1.8000 V

Commercial grade

0 to 85 °C

Tray

GS8342D37BD

-

-

3A991.B.2.B

SigmaQuad-II+ B4

-

PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

1.9 V

1.5/1.8,1.8 V

COMMERCIAL

1.7 V

36 Mbit

2

SYNCHRONOUS

675 mA

-

Pipelined

1 M x 36

3-STATE

1.4 mm

36

18 Bit

SRAM

36 Mbit

0.2 A

37748736 bit

Commercial

PARALLEL

SEPARATE

QDR SRAM

-

-

1.7 V

SRAM

15 mm

13 mm

GS8672D38BE-450
GS8672D38BE-450

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

-

15

-

Parallel

GSI Technology

-

450 MHz

-

-

+ 70 C

QDR-II

-

0 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

N

-

-

1.9 V

1.7 V

-

-

SigmaQuad-II+

-

-

-

Tray

GS8672D38BE

-

-

-

SigmaQuad-II+ B4

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

72 Mbit

-

-

2.05 A

-

-

2 M x 36

-

-

-

-

SRAM

-

-

72

-

-

-

-

-

-

-

SRAM

-

-

GS8161E32DD-250I
GS8161E32DD-250I

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

-

36

-

-

GSI Technology

-

250 MHz

-

-

+ 85 C

SDR

-

- 40 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

3.6 V

2.3 V

-

-

SyncBurst

-

-

-

Tray

GS8161E32DD

-

-

-

DCD Pipeline/Flow Through

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

18 Mbit

-

-

250 mA, 270 mA

5.5 ns

-

512 k x 32

-

-

-

-

SRAM

-

-

-

-

-

-

-

-

-

-

SRAM

-

-

GS816136DD-333IV
GS816136DD-333IV

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

SDR

18

-

Parallel

GSI Technology

-

333 MHz

200@Flow-Through/333@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

512 kWords

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FBGA

2.7 V

1.7 V

-

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 100 °C

Tray

GS816136DD

-

-

-

Synchronous Burst

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

18 Mbit

4

-

260 mA, 330 mA

5 ns

Flow-Through/Pipelined

512 k x 36

-

-

-

19 Bit

SRAM

18 Mbit

-

-

Industrial

-

-

-

-

-

-

SRAM

-

-

GS8160Z36DGT-250V
GS8160Z36DGT-250V

GSI Technology

In Stock

-

-

10 Weeks

TQFP-100

YES

100

5.5 ns

GSI Technology

-

-

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS8160Z36DGT-250V

250 MHz

-

-

+ 85 C

SDR

-

0 C

Yes

-

-

SMD/SMT

-

524288 words

512000

70 °C

-

PLASTIC/EPOXY

LQFP

LQFP,

-

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.49

Details

Yes

-

2.7 V

1.7 V

1.8 V

-

NBT SRAM

-

-

-

Tray

GS8160Z36DGT

-

-

3A991.B.2.B

NBT

-

ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

100

R-PQFP-G100

-

2 V

-

COMMERCIAL

1.7 V

18 Mbit

-

SYNCHRONOUS

225 mA, 245 mA

5.5 ns

-

512 k x 36

-

1.6 mm

36

-

SRAM

-

-

18

-

PARALLEL

-

ZBT SRAM

-

-

-

SRAM

20 mm

14 mm

GS880E18CGT-150I
GS880E18CGT-150I

GSI Technology

In Stock

-

-

8 Weeks

TQFP-100

YES

100

7.5 ns

GSI Technology

150 MHz

-

72

GSI TECHNOLOGY

Parallel

GSI Technology

GS880E18CGT-150I

150 MHz

-

-

+ 85 C

SDR

-

- 40 C

Yes

3

-

SMD/SMT

-

524288 words

512000

85 °C

-40 °C

PLASTIC/EPOXY

LQFP

LQFP, QFP100,.63X.87

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.6

Details

Yes

-

3.6 V

2.3 V

2.5 V

-

SyncBurst

-

-

-

Tray

GS880E18CGT

e3

Yes

3A991.B.2.B

DCD

PURE MATTE TIN

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

9 Mbit

-

SYNCHRONOUS

140 mA, 150 mA

7.5 ns

-

512 k x 18

3-STATE

1.6 mm

18

-

SRAM

-

0.045 A

9437184 bit

-

PARALLEL

COMMON

CACHE SRAM

-

-

2.3 V

SRAM

20 mm

14 mm

GS8182S36BGD-200I
GS8182S36BGD-200I

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

-

18

-

Parallel

GSI Technology

-

200 MHz

-

-

+ 85 C

DDR

-

- 40 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

-

1.9 V

1.7 V

-

-

SigmaSIO DDR-II

-

-

-

Tray

GS8182S36BGD

-

-

-

SigmaSIO DDR-II

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

18 Mbit

-

-

445 mA

-

-

512 k x 36

-

-

-

-

SRAM

-

-

-

-

-

-

-

-

-

-

SRAM

-

-

GS8342D19BGD-350
GS8342D19BGD-350

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

QDR

15

-

Parallel

GSI Technology

-

350 MHz

350 MHz

1.9 V

+ 70 C

DDR

1.7 V

0 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

2 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaQuad-II+

1.8000 V

Commercial grade

0 to 85 °C

Tray

GS8342D19BGD

-

-

-

SigmaQuad-II+ B4

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

36 Mbit

2

-

665 mA

-

Pipelined

2 M x 18

-

-

-

19 Bit

SRAM

36 Mbit

-

-

Commercial

-

-

-

-

-

-

SRAM

-

-

GS8672T37BGE-300I
GS8672T37BGE-300I

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

-

15

-

Parallel

GSI Technology

-

300 MHz

-

-

+ 85 C

DDR-II

-

- 40 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

-

1.9 V

1.7 V

-

-

SigmaDDR-II+

-

-

-

Tray

GS8672T37BGE

-

-

-

SigmaDDR-II+ B2

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

72 Mbit

-

-

1.2 A

-

-

2 M x 36

-

-

-

-

SRAM

-

-

72

-

-

-

-

-

-

-

SRAM

-

-

GS881Z32CGD-300
GS881Z32CGD-300

GSI Technology

In Stock

-

-

8 Weeks

BGA-165

YES

100

5 ns

GSI Technology

-

SDR

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS881Z32CGD-300

300 MHz

200@Flow-Through/300@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

3

Surface Mount

SMD/SMT

32 Bit

256 kWords

256000

70 °C

-

PLASTIC/EPOXY

LQFP

LQFP,

-

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.29

Details

Yes

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

Commercial grade

0 to 70 °C

Tray

GS881Z32CGD

e1

Yes

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

165

R-PQFP-G100

Not Qualified

2.7 V

-

COMMERCIAL

2.3 V

9 Mbit

1

SYNCHRONOUS

165 mA, 225 mA

5 ns

Flow-Through/Pipelined

256 k x 32

-

1.6 mm

32

18 Bit

SRAM

8 Mbit

-

8388608 bit

Commercial

PARALLEL

-

ZBT SRAM

-

-

-

SRAM

20 mm

14 mm

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