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Memory

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Clock Frequency-Max (fCLK)

Data Rate Architecture

Factory Pack QuantityFactory Pack Quantity

Ihs Manufacturer

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Manufacturer

Manufacturer Part Number

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Moisture Sensitivity Levels

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Mounting Styles

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Number of Words Code

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Package Description

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Part Package Code

Reflow Temperature-Max (s)

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RoHS

Rohs Code

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Supply Voltage-Max

Supply Voltage-Min

Supply Voltage-Nom (Vsup)

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Tradename

Typical Operating Supply Voltage

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JESD-609 Code

Pbfree Code

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Terminal Finish

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Subcategory

Technology

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Number of Functions

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Reach Compliance Code

Pin Count

JESD-30 Code

Qualification Status

Supply Voltage-Max (Vsup)

Power Supplies

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Supply Voltage-Min (Vsup)

Memory Size

Number of Ports

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Access Time

Architecture

Organization

Output Characteristics

Seated Height-Max

Memory Width

Address Bus Width

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Density

Standby Current-Max

Memory Density

Screening Level

Parallel/Serial

I/O Type

Memory IC Type

Standby Voltage-Min

Product Category

Length

Width

GS8182S09BD-300I
GS8182S09BD-300I

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

-

-

-

18

-

Parallel

-

-

300 MHz

-

-

+ 85 C

DDR

-

- 40 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

1.9 V

1.7 V

-

-

SigmaSIO DDR-II

-

-

-

Tray

GS8182S09BD

-

-

-

SigmaSIO DDR-II

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

18 Mbit

-

-

495 mA

-

-

2 M x 9

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

GS84018CGT-166I
GS84018CGT-166I

GSI Technology

In Stock

-

-

-

TQFP-100

YES

100

7 ns

-

-

-

72

GSI TECHNOLOGY

Parallel

-

GS84018CGT-166I

166 MHz

-

-

+ 85 C

SDR

-

- 40 C

Yes

3

-

SMD/SMT

-

262144 words

256000

85 °C

-40 °C

PLASTIC/EPOXY

LQFP

LQFP,

-

RECTANGULAR

FLATPACK, LOW PROFILE

Active

-

NOT SPECIFIED

5.66

Details

Yes

-

3.6 V

2.3 V

3.3 V

-

SyncBurst

-

-

-

Tray

GS84018CGT

-

-

3A991.B.2.B

Pipeline/Flow Through

Pure Matte Tin (Sn)

FLOW-THROUGH OR PIPELINED ARCHITECTURE

-

-

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

-

R-PQFP-G100

-

3.6 V

-

INDUSTRIAL

3 V

4 Mbit

-

SYNCHRONOUS

145 mA, 170 mA

6.5 ns

-

256 k x 18

-

1.6 mm

18

-

-

-

-

4718592 bit

-

PARALLEL

-

CACHE SRAM

-

-

20 mm

14 mm

GS84018CB-250
GS84018CB-250

GSI Technology

In Stock

-

-

-

BGA-119

-

-

-

-

-

-

84

-

Parallel

-

-

250 MHz

-

-

+ 70 C

SDR

-

0 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

3.6 V

2.3 V

-

-

SyncBurst

-

-

-

Tray

GS84018CB

-

-

-

Pipeline/Flow Through

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

4 Mbit

-

-

145 mA, 180 mA

5.5 ns

-

256 k x 18

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

GS84036CGT-250
GS84036CGT-250

GSI Technology

In Stock

-

-

-

TQFP-100

-

-

-

-

-

-

72

-

Parallel

-

-

250 MHz

-

-

+ 70 C

SDR

-

0 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

-

3.6 V

2.3 V

-

-

SyncBurst

-

-

-

Tray

GS84036CGT

-

-

-

Pipeline/Flow Through

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

4 Mbit

-

-

155 mA, 195 mA

5.5 ns

-

128 k x 36

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

GS8342Q10BGD-250I
GS8342Q10BGD-250I

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

QDR

15

-

Parallel

GSI Technology

-

250 MHz

250 MHz

1.9 V

+ 85 C

DDR

1.7 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

9 Bit

4 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaQuad-II+

1.8000 V

Industrial grade

-40 to 100 °C

Tray

GS8342Q10BGD

-

-

-

SigmaQuad-II+ B2

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

36 Mbit

2

-

675 mA

-

Pipelined

4 M x 9

-

-

-

21 Bit

SRAM

36 Mbit

-

-

Industrial

-

-

-

-

SRAM

-

-

GS8182D37BGD-333
GS8182D37BGD-333

GSI Technology

In Stock

-

-

8 Weeks

BGA-165

YES

165

0.45 ns

GSI Technology

333 MHz

-

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS8182D37BGD-333

333 MHz

-

-

+ 70 C

DDR

-

0 C

Yes

3

-

SMD/SMT

-

524288 words

512000

70 °C

-

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.21

Details

Yes

-

1.9 V

1.7 V

1.8 V

-

SigmaQuad-II+

-

-

-

Tray

GS8182D37BGD

e1

Yes

3A991.B.2.B

SigmaQuad II+

Tin/Silver/Copper (Sn/Ag/Cu)

PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

1.9 V

1.5/1.8,1.8 V

COMMERCIAL

1.7 V

18 Mbit

-

SYNCHRONOUS

575 mA

-

-

512 k x 36

3-STATE

1.4 mm

36

-

SRAM

-

0.16 A

18874368 bit

-

PARALLEL

SEPARATE

DDR SRAM

1.7 V

SRAM

15 mm

10 mm

GS8672Q19BE-375I
GS8672Q19BE-375I

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

-

15

-

Parallel

GSI Technology

-

375 MHz

-

-

+ 85 C

QDR-II

-

- 40 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

1.9 V

1.7 V

-

-

SigmaQuad-II+

-

-

-

Tray

GS8672Q19BE

-

-

-

SigmaQuad-II+

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

72 Mbit

-

-

1.32 A

-

-

4 M x 18

-

-

-

-

SRAM

-

-

72

-

-

-

-

-

SRAM

-

-

GS71116AGU-12I
GS71116AGU-12I

GSI Technology

In Stock

-

-

6 Weeks

BGA-48

YES

48

12 ns

GSI Technology

-

-

240

GSI TECHNOLOGY

Parallel

GSI Technology

GS71116AGU-12I

-

-

-

+ 85 C

SDR

-

- 40 C

-

3

-

SMD/SMT

-

65536 words

64000

85 °C

-40 °C

PLASTIC/EPOXY

TFBGA

TFBGA, BGA48,6X8,30

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

Active

BGA

NOT SPECIFIED

5.17

Details

Yes

-

3.6 V

3 V

3.3 V

-

-

-

-

-

-

GS71116AGU

e1

Yes

3A991.B.2.B

Asynchronous

TIN SILVER COPPER

-

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

0.75 mm

compliant

48

R-PBGA-B48

Not Qualified

3.6 V

3.3 V

INDUSTRIAL

3 V

1 Mbit

-

ASYNCHRONOUS

90 mA

12 ns

-

64 k x 16

3-STATE

1.2 mm

16

-

SRAM

-

0.005 A

1048576 bit

-

PARALLEL

COMMON

STANDARD SRAM

2 V

SRAM

8 mm

6 mm

GS8182D18BGD-250I
GS8182D18BGD-250I

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

-

18

-

Parallel

GSI Technology

-

250 MHz

-

-

+ 85 C

DDR

-

- 40 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

-

1.9 V

1.7 V

-

-

SigmaQuad-II

-

-

-

Tray

GS8182D18BGD

-

-

-

SigmaQuad-II

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

18 Mbit

-

-

430 mA

-

-

1 M x 18

-

-

-

-

SRAM

-

-

-

-

-

-

-

-

SRAM

-

-

GS8160E36DGT-150V
GS8160E36DGT-150V

GSI Technology

In Stock

-

-

-

TQFP-100

-

-

-

GSI Technology

-

SDR

18

-

Parallel

GSI Technology

-

150 MHz

150 MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

0 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

512 kWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

TQFP

2.7 V

1.7 V

-

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 70 °C

Tray

GS8160E36DGT

-

-

-

DCD Synchronous Burst

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

100

-

-

-

-

-

-

18 Mbit

4

-

175 mA, 190 mA

7.5 ns

Flow-Through/Pipelined

512 k x 36

-

-

-

19 Bit

SRAM

18 Mbit

-

-

Commercial

-

-

-

-

SRAM

-

-

GS8160E36DGT-250I
GS8160E36DGT-250I

GSI Technology

In Stock

-

-

-

TQFP-100

-

-

-

GSI Technology

-

-

36

-

Parallel

GSI Technology

-

250 MHz

-

-

+ 100 C

SDR

-

- 40 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

-

3.6 V

2.3 V

-

-

SyncBurst

-

-

-

Tray

GS8160E36DGT

-

-

-

Pipeline/Flow Through

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

18 Mbit

-

-

250 mA, 270 mA

5.5 ns

-

512 k x 36

-

-

-

-

SRAM

-

-

-

-

-

-

-

-

SRAM

-

-

GS881Z32CGT-250
GS881Z32CGT-250

GSI Technology

In Stock

-

-

-

TQFP-100

-

-

-

GSI Technology

-

SDR

72

-

Parallel

GSI Technology

-

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

-

Surface Mount

SMD/SMT

32 Bit

256 kWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

TQFP

3.6 V

2.3 V

-

Synchronous

NBT SRAM

2.5, 3.3 V

Commercial grade

0 to 70 °C

Tray

GS881Z32CGT

-

-

-

NBT Pipeline/Flow Through

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

100

-

-

-

-

-

-

9 Mbit

1

-

155 mA, 195 mA

5.5 ns

Flow-Through/Pipelined

256 k x 32

-

-

-

18 Bit

SRAM

8 Mbit

-

-

Commercial

-

-

-

-

SRAM

-

-

GS8342Q19BD-300
GS8342Q19BD-300

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

-

-

QDR

-

-

Parallel

-

-

300 MHz

300 MHz

1.9 V

+ 70 C

-

1.7 V

0 C

-

-

Surface Mount

SMD/SMT

18 Bit

2 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FBGA

1.9 V

1.7 V

-

Synchronous

-

1.8000 V

Commercial grade

0 to 85 °C

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

165

-

-

-

-

-

-

36 Mbit

2

-

775 mA

-

Pipelined

2 M x 18

-

-

-

20 Bit

-

36 Mbit

-

-

Commercial

-

-

-

-

-

-

-

GS8342S36BGD-350
GS8342S36BGD-350

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

DDR

15

-

Parallel

GSI Technology

-

350 MHz

350 MHz

-

+ 70 C

DDR

-

0 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

1 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaSIO-II

1.8000 V

Commercial grade

0 to 85 °C

Tray

GS8342S36BGD

-

-

-

SigmaSIO DDR-II

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

36 Mbit

2

-

850 mA

-

Pipelined

1 M x 36

-

-

-

-

SRAM

36 Mbit

-

-

Commercial

-

-

-

-

SRAM

-

-

GS8161E32DGT-150I
GS8161E32DGT-150I

GSI Technology

In Stock

-

-

-

TQFP-100

-

-

-

GSI Technology

-

-

36

-

Parallel

GSI Technology

-

150 MHz

-

-

+ 85 C

SDR

-

- 40 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

-

3.6 V

2.3 V

-

-

NBT SRAM

-

-

-

Tray

GS8161E32DGT

-

-

-

DCD Pipeline/Flow Through

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

18 Mbit

-

-

200 mA, 210 mA

7.5 ns

-

512 k x 32

-

-

-

-

SRAM

-

-

-

-

-

-

-

-

SRAM

-

-

GS8342D09BD-250I
GS8342D09BD-250I

GSI Technology

In Stock

-

-

10 Weeks

BGA-165

YES

165

0.45 ns

GSI Technology

250 MHz

-

15

GSI TECHNOLOGY

Parallel

GSI Technology

GS8342D09BD-250I

250 MHz

250 MHz

1.9 V

+ 85 C

DDR

1.7 V

- 40 C

Yes

-

-

SMD/SMT

9 Bit

4194304 words

4000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

-

5.35

-

No

-

1.9 V

1.7 V

1.8 V

Synchronous

SigmaQuad-II

1.8000 V

Industrial grade

-40 to 100 °C

Tray

GS8342D09BD

-

-

3A991.B.2.B

SigmaQuad-II

-

PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

-

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

1.9 V

1.5/1.8,1.8 V

INDUSTRIAL

1.7 V

36 Mbit

-

SYNCHRONOUS

470 mA

0.45

-

4 M x 9

3-STATE

1.4 mm

9

-

SRAM

-

0.195 A

36

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

SRAM

15 mm

13 mm

GS8161E36DGD-250IV
GS8161E36DGD-250IV

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

SDR

18

-

Parallel

GSI Technology

-

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

512 kWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

2.7 V

1.7 V

-

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 85 °C

Tray

GS8161E36DGD

-

-

-

DCD Pipeline/Flow Through

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

18 Mbit

4

-

245 mA, 265 mA

5.5 ns

Flow-Through/Pipelined

512 k x 36

-

-

-

19 Bit

SRAM

18 Mbit

-

-

Industrial

-

-

-

-

SRAM

-

-

GS8342QT07BD-300
GS8342QT07BD-300

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

-

15

-

Parallel

GSI Technology

-

300 MHz

300 MHz

1.9 V

+ 70 C

DDR

1.7 V

0 C

Yes

-

-

SMD/SMT

8 Bit

-

-

-

-

-

-

-

-

-

-

-

-

-

-

N

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaQuad-II+

1.8000 V

-

0 to 85 °C

Tray

GS8342QT07BD

-

-

-

SigmaQuad-II+ B2

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

36 Mbit

-

-

775 mA

0.45

-

4 M x 8

-

-

-

-

SRAM

-

-

36

-

-

-

-

-

SRAM

-

-

GS8672D18BE-400
GS8672D18BE-400

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

-

15

-

Parallel

GSI Technology

-

400 MHz

-

-

+ 70 C

QDR-II

-

0 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

N

-

-

1.9 V

1.7 V

-

-

SigmaQuad-II

-

-

-

Tray

GS8672D18BE

-

-

-

SigmaQuad-II

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

72 Mbit

-

-

1.36 A

-

-

4 M x 18

-

-

-

-

SRAM

-

-

72

-

-

-

-

-

SRAM

-

-

GS8161Z32DGD-250V
GS8161Z32DGD-250V

GSI Technology

In Stock

-

-

10 Weeks

BGA-165

YES

165

5.5 ns

GSI Technology

-

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS8161Z32DGD-250V

250 MHz

-

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

-

Surface Mount

SMD/SMT

32 Bit

512 kWords

1000000

70 °C

-

PLASTIC/EPOXY

LBGA

LBGA,

-

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.3

Details

Yes

FBGA

2.7 V

1.7 V

1.8 V

Synchronous

NBT SRAM

1.8, 2.5 V

Commercial grade

0 to 85 °C

Tray

GS8161Z32DGD

-

-

3A991.B.2.B

NBT

-

FLOW THROUGH AND PIPELINED ARCHITECTURE, ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

-

2 V

-

COMMERCIAL

1.7 V

18 Mbit

4

SYNCHRONOUS

225 mA, 245 mA

5.5 ns

Flow-Through/Pipelined

512 k x 32

-

1.4 mm

32

-

SRAM

18 Mbit

-

33554432 bit

Commercial

PARALLEL

-

ZBT SRAM

-

SRAM

15 mm

13 mm

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