-

10 Weeks

BGA-165

YES

165

165

5.5 ns

GSI Technology

-

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS8161Z32DGD-250V

250 MHz

-

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

32 Bit

512 kWords

1000000

70 °C

-

PLASTIC/EPOXY

LBGA

LBGA,

-

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.3

Details

Yes

FBGA

2.7 V

1.7 V

1.8 V

Synchronous

NBT SRAM

1.8, 2.5 V

Commercial grade

0 to 85 °C

Tray

GS8161Z32DGD

-

-

3A991.B.2.B

NBT

-

FLOW THROUGH AND PIPELINED ARCHITECTURE, ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

R-PBGA-B165

-

-

COMMERCIAL

18 Mbit

4

SYNCHRONOUS

225 mA, 245 mA

5.5 ns

Flow-Through/Pipelined

512 k x 32

-

1.4 mm

32

-

SRAM

18 Mbit

-

33554432 bit

Commercial

PARALLEL

-

ZBT SRAM

-

-

-

-

-

-

-

2 V

1.7 V

SRAM

15 mm

13 mm

-

-

BGA-165

-

165

-

-

GSI Technology

-

QDR

15

-

Parallel

GSI Technology

-

333 MHz

333 MHz

1.9 V

+ 70 C

DDR

1.7 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

1 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaQuad-II

1.8000 V

Commercial grade

0 to 85 °C

Tray

GS8342Q36BGD

-

-

-

SigmaQuad-II

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

36 Mbit

2

-

1.055 A

-

Pipelined

1 M x 36

-

-

-

19 Bit

SRAM

36 Mbit

-

-

Commercial

-

-

-

-

-

-

-

-

-

-

-

-

SRAM

-

-

-

-

BGA-165

-

165

-

-

GSI Technology

-

QDR

15

-

Parallel

GSI Technology

-

250 MHz

250 MHz

1.9 V

+ 85 C

DDR

1.7 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

1 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaQuad-II+

1.8000 V

Industrial grade

-40 to 100 °C

Tray

GS8342Q37BD

-

-

-

SigmaQuad-II+ B2

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

36 Mbit

2

-

775 mA

-

Pipelined

1 M x 36

-

-

-

19 Bit

SRAM

36 Mbit

-

-

Industrial

-

-

-

-

-

-

-

-

-

-

-

-

SRAM

-

-

-

-

BGA-165

-

165

-

-

GSI Technology

-

SDR

18

-

Parallel

GSI Technology

-

333 MHz

200@Flow-Through/333@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

512 kWords

-

-

-

-

-

-

-

-

-

-

-

-

-

N

-

FBGA

2.7 V

1.7 V

-

Synchronous

NBT SRAM

1.8, 2.5 V

Commercial grade

0 to 85 °C

Tray

GS8162Z36DD

-

-

-

NBT Pipeline/Flow Through

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

18 Mbit

4

-

240 mA, 310 mA

5 ns

Flow-Through/Pipelined

512 k x 36

-

-

-

19 Bit

SRAM

18 Mbit

-

-

Commercial

-

-

-

-

-

-

-

-

-

-

-

-

SRAM

-

-

-

10 Weeks

BGA-119

YES

119

119

7.5 ns

GSI Technology

-

SDR

21

GSI TECHNOLOGY

Parallel

GSI Technology

GS8162Z36DB-150IV

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

512 kWords

512000

85 °C

-40 °C

PLASTIC/EPOXY

BGA

BGA,

-

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.25

-

No

FBGA

2.7 V

1.7 V

1.8 V

Synchronous

NBT SRAM

1.8, 2.5 V

Industrial grade

-40 to 100 °C

Tray

GS8162Z36DB

-

-

3A991.B.2.B

NBT Pipeline/Flow Through

-

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

R-PBGA-B119

Not Qualified

-

INDUSTRIAL

18 Mbit

4

SYNCHRONOUS

195 mA, 210 mA

7.5 ns

Flow-Through/Pipelined

512 k x 36

-

1.99 mm

36

19 Bit

SRAM

18 Mbit

-

18874368 bit

Industrial

PARALLEL

-

ZBT SRAM

-

-

-

-

-

-

-

2 V

1.7 V

SRAM

22 mm

14 mm

-

-

TQFP-100

-

100

-

-

GSI Technology

-

SDR

18

-

Parallel

GSI Technology

-

200 MHz

200 MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

32 Bit

512 kWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

TQFP

2.7 V

1.7 V

-

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS8160E32DGT

-

-

-

DCD Synchronous Burst

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

18 Mbit

4

-

205 mA, 210 mA

6.5 ns

-

512 k x 32

-

-

-

-

SRAM

18 Mbit

-

-

Commercial

-

-

-

-

-

-

-

-

-

-

-

-

SRAM

-

-

-

7 Weeks

BGA-119

YES

119

119

12 ns

GSI Technology

100 MHz

-

84

GSI TECHNOLOGY

Parallel

GSI Technology

GS842Z18CGB-100I

100 MHz

-

-

+ 85 C

SDR

-

- 40 C

Yes

-

SMD/SMT

-

262144 words

256000

85 °C

-40 °C

PLASTIC/EPOXY

BGA

BGA, BGA119,7X17,50

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.36

Details

Yes

-

3.6 V

2.3 V

2.5 V

-

NBT SRAM

-

-

-

Tray

GS842Z18CGB

-

-

3A991.B.2.B

NBT Pipeline/Flow Through

-

FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

R-PBGA-B119

Not Qualified

2.5/3.3 V

INDUSTRIAL

4 Mbit

-

SYNCHRONOUS

130 mA, 130 mA

12 ns

-

256 k x 18

3-STATE

1.99 mm

18

-

SRAM

-

0.045 A

4718592 bit

-

PARALLEL

COMMON

ZBT SRAM

-

-

-

-

-

2.3 V

-

2.7 V

2.3 V

SRAM

22 mm

14 mm

-

-

BGA-165

-

165

-

-

-

-

DDR

-

-

Parallel

-

-

400 MHz

400 MHz

-

+ 70 C

-

-

0 C

-

Surface Mount

SMD/SMT

8 Bit

4 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FBGA

1.9 V

1.7 V

-

Synchronous

-

1.8000 V

Commercial grade

0 to 85 °C

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

36 Mbit

1

-

600 mA

-

Pipelined

4 M x 8

-

-

-

-

-

36 Mbit

-

-

Commercial

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

100

-

-

-

-

SDR

-

-

-

-

-

-

181.8@Flow-Through/250@Pipelined MHz

2, 2.7 V

-

-

1.7, 2.3 V

-

-

Surface Mount

-

36 Bit

512 kWords

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

TQFP

-

-

-

Synchronous

-

1.8, 2.5 V

Industrial grade

-40 to 100 °C

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

4

-

-

-

Flow-Through/Pipelined

-

-

-

-

19 Bit

-

18 Mbit

-

-

Industrial

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BGA-165

-

165

-

-

GSI Technology

-

QDR

15

-

Parallel

GSI Technology

-

200 MHz

200 MHz

1.9 V

+ 85 C

DDR

1.7 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

2 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaQuad-II+

1.8000 V

Industrial grade

-40 to 100 °C

Tray

GS8342Q19BGD

-

-

-

SigmaQuad-II+ B2

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

36 Mbit

2

-

565 mA

-

Pipelined

2 M x 18

-

-

-

20 Bit

SRAM

36 Mbit

-

-

Industrial

-

-

-

-

-

-

-

-

-

-

-

-

SRAM

-

-

-

-

-

NO

8

8

-

-

2 MHz

-

-

MICROCHIP TECHNOLOGY INC

-

Microchip Technology Inc

93LC56C-I/PG

-

-

-

-

-

-

-

-

-

-

-

128 words

128

85 °C

-40 °C

PLASTIC/EPOXY

DIP

DIP, DIP8,.3

DIP8,.3

RECTANGULAR

IN-LINE

Active

DIP

NOT SPECIFIED

5.25

-

Yes

-

-

-

5 V

-

-

-

-

-

-

-

e3

Yes

EAR99

-

Matte Tin (Sn)

-

8542.32.00.51

EEPROMs

CMOS

DUAL

THROUGH-HOLE

NOT SPECIFIED

1

2.54 mm

compliant

R-PDIP-T8

Not Qualified

3/5 V

INDUSTRIAL

-

-

SYNCHRONOUS

0.002 mA

-

-

128X16

-

5.334 mm

16

-

-

-

0.000001 A

2048 bit

-

SERIAL

-

EEPROM

MICROWIRE

1000000 Write/Erase Cycles

6 ms

200

SOFTWARE

-

8

5.5 V

2.5 V

-

9.271 mm

7.62 mm

-

-

BGA-165

-

165

-

-

GSI Technology

-

SDR

18

-

Parallel

GSI Technology

-

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

32 Bit

512 kWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

2.7 V

1.7 V

-

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS8161E32DGD

-

-

-

DCD Pipeline/Flow Through

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

18 Mbit

4

-

205 mA, 210 mA

6.5 ns

Flow-Through/Pipelined

512 k x 32

-

-

-

19 Bit

SRAM

18 Mbit

-

-

Commercial

-

-

-

-

-

-

-

-

-

-

-

-

SRAM

-

-

-

10 Weeks

BGA-165

YES

165

165

6.5 ns

GSI Technology

-

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS816118DD-200IV

200 MHz

-

2, 2.7 V

+ 100 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

1 MWords

1000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA,

-

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.26

-

No

FBGA

2.7 V

1.7 V

1.8 V

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 100 °C

Tray

GS816118DD

-

-

3A991.B.2.B

Synchronous Burst

-

ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

R-PBGA-B165

-

-

INDUSTRIAL

18 Mbit

2

SYNCHRONOUS

210 mA, 215 mA

6.5 ns

Flow-Through/Pipelined

1 M x 18

-

1.4 mm

18

-

SRAM

18 Mbit

-

18874368 bit

Industrial

PARALLEL

-

CACHE SRAM

-

-

-

-

-

-

-

2 V

1.7 V

SRAM

15 mm

13 mm

-

-

BGA-165

-

165

-

-

GSI Technology

-

QDR

15

-

Parallel

GSI Technology

-

400 MHz

400 MHz

1.9 V

+ 70 C

DDR

1.7 V

0 C

Yes

Surface Mount

SMD/SMT

18 Bit

2 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

N

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaQuad-II+

1.8000 V

Commercial grade

0 to 85 °C

Tray

GS8342D20BD

-

-

-

SigmaQuad-II+

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

36 Mbit

2

-

705 mA

-

Pipelined

2 M x 18

-

-

-

19 Bit

SRAM

36 Mbit

-

-

Commercial

-

-

-

-

-

-

-

-

-

-

-

-

SRAM

-

-

-

-

BGA-119

-

119

-

-

GSI Technology

-

SDR

21

-

Parallel

GSI Technology

-

375 MHz

238@Flow-Through/375@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

1 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

3.6 V

2.3 V

-

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 100 °C

Tray

GS816218DGB

-

-

-

Pipeline/Flow Through

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

18 Mbit

2

-

270 mA, 340 mA

4.2 ns

Flow-Through/Pipelined

1 M x 18

-

-

-

20 Bit

SRAM

18 Mbit

-

-

Industrial

-

-

-

-

-

-

-

-

-

-

-

-

SRAM

-

-

-

10 Weeks

BGA-119

YES

119

119

7.5 ns

GSI Technology

-

-

21

GSI TECHNOLOGY

Parallel

GSI Technology

GS816236DGB-150

150 MHz

-

-

+ 70 C

SDR

-

0 C

Yes

-

SMD/SMT

-

524288 words

512000

70 °C

-

PLASTIC/EPOXY

BGA

BGA,

-

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.25

Details

Yes

-

3.6 V

2.3 V

2.5 V

-

SyncBurst

-

-

-

Tray

GS816236DGB

-

-

3A991.B.2.B

Pipeline/Flow Through

-

ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

R-PBGA-B119

-

-

COMMERCIAL

18 Mbit

-

SYNCHRONOUS

180 mA, 190 mA

7.5 ns

-

512 k x 36

-

1.99 mm

36

-

SRAM

-

-

18874368 bit

-

PARALLEL

-

CACHE SRAM

-

-

-

-

-

-

-

2.7 V

2.3 V

SRAM

22 mm

14 mm

-

-

BGA-165

-

165

-

-

GSI Technology

-

QDR

15

-

Parallel

GSI Technology

-

333 MHz

333 MHz

1.9 V

+ 70 C

DDR

1.7 V

0 C

Yes

Surface Mount

SMD/SMT

8 Bit

4 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaQuad-II+

1.8000 V

Commercial grade

0 to 85 °C

Tray

GS8342D07BGD

-

-

-

SigmaQuad-II+ B4

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

36 Mbit

2

-

605 mA

-

Pipelined

4 M x 8

-

-

-

20 Bit

SRAM

36 Mbit

-

-

Commercial

-

-

-

-

-

-

-

-

-

-

-

-

SRAM

-

-

-

-

TQFP-100

-

100

-

-

GSI Technology

-

SDR

18

-

Parallel

GSI Technology

-

250 MHz

250 MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

18 Bit

1 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

TQFP

2.7 V

1.7 V

-

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS8160E18DGT

-

-

-

DCD Synchronous Burst

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

18 Mbit

2

-

205 mA, 225 mA

5.5 ns

Flow-Through/Pipelined

1 M x 18

-

-

-

20 Bit

SRAM

18 Mbit

-

-

Commercial

-

-

-

-

-

-

-

-

-

-

-

-

SRAM

-

-

-

8 Weeks

BGA-165

YES

165

165

6.5 ns

GSI Technology

200 MHz

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS832218AD-200I

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

2 MWords

2000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.11

-

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 100 °C

Tray

GS832218AD

e0

No

3A991.B.2.B

Pipeline/Flow Through

Tin/Lead (Sn/Pb)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

R-PBGA-B165

Not Qualified

2.5/3.3 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

205 mA, 240 mA

6.5 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.4 mm

18

21 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

CACHE SRAM

-

-

-

-

-

2.3 V

-

2.7 V

2.3 V

SRAM

15 mm

13 mm

-

-

BGA-165

-

165

-

-

GSI Technology

-

-

15

-

Parallel

GSI Technology

-

300 MHz

300 MHz

1.9 V

+ 70 C

DDR

1.7 V

0 C

Yes

-

SMD/SMT

8 Bit

-

-

-

-

-

-

-

-

-

-

-

-

-

-

N

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaQuad-II+

1.8000 V

-

0 to 85 °C

Tray

GS8342QT07BD

-

-

-

SigmaQuad-II+ B2

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

36 Mbit

-

-

775 mA

0.45

-

4 M x 8

-

-

-

-

SRAM

-

-

36

-

-

-

-

-

-

-

-

-

-

-

-

-

SRAM

-

-