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Factory Pack QuantityFactory Pack Quantity

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Supply Voltage-Max (Vsup)

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Supply Voltage-Min (Vsup)

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Address Bus Width

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Standby Current-Max

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Write Cycle Time-Max (tWC)

Data Retention Time-Min

Write Protection

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Product Category

Length

Width

GS832218AB-333
GS832218AB-333

GSI Technology

In Stock

-

-

8 Weeks

BGA-119

YES

119

4.5 ns

-

333 MHz

SDR

-

GSI TECHNOLOGY

Parallel

GSI Technology

GS832218AB-333

333 MHz

222@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 70 C

-

2.3, 3 V

0 C

-

-

Surface Mount

SMD/SMT

18 Bit

2 MWords

2000000

70 °C

-

PLASTIC/EPOXY

BGA

BGA, BGA119,7X17,50

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.11

-

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

-

2.5, 3.3 V

Commercial grade

0 to 85 °C

-

GS832218AB

e0

No

3A991.B.2.B

-

Tin/Lead (Sn/Pb)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2.7 V

2.5/3.3 V

COMMERCIAL

2.3 V

36 Mbit

2

SYNCHRONOUS

0.3 mA

4.5 ns

Flow-Through/Pipelined

2MX18

3-STATE

1.99 mm

18

21 Bit

-

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

CACHE SRAM

-

-

-

-

-

2.3 V

-

22 mm

14 mm

GS8342T06BD-400
GS8342T06BD-400

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

-

-

DDR

-

-

Parallel

-

-

400 MHz

400 MHz

-

+ 70 C

-

-

0 C

-

-

Surface Mount

SMD/SMT

8 Bit

4 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FBGA

1.9 V

1.7 V

-

Synchronous

-

1.8000 V

Commercial grade

0 to 85 °C

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

165

-

-

-

-

-

-

36 Mbit

1

-

600 mA

-

Pipelined

4 M x 8

-

-

-

-

-

36 Mbit

-

-

Commercial

-

-

-

-

-

-

-

-

-

-

-

-

GS816236DGB-150
GS816236DGB-150

GSI Technology

In Stock

-

-

10 Weeks

BGA-119

YES

119

7.5 ns

GSI Technology

-

-

21

GSI TECHNOLOGY

Parallel

GSI Technology

GS816236DGB-150

150 MHz

-

-

+ 70 C

SDR

-

0 C

Yes

-

-

SMD/SMT

-

524288 words

512000

70 °C

-

PLASTIC/EPOXY

BGA

BGA,

-

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.25

Details

Yes

-

3.6 V

2.3 V

2.5 V

-

SyncBurst

-

-

-

Tray

GS816236DGB

-

-

3A991.B.2.B

Pipeline/Flow Through

-

ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

-

2.7 V

-

COMMERCIAL

2.3 V

18 Mbit

-

SYNCHRONOUS

180 mA, 190 mA

7.5 ns

-

512 k x 36

-

1.99 mm

36

-

SRAM

-

-

18874368 bit

-

PARALLEL

-

CACHE SRAM

-

-

-

-

-

-

SRAM

22 mm

14 mm

GS8342D07BGD-333
GS8342D07BGD-333

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

QDR

15

-

Parallel

GSI Technology

-

333 MHz

333 MHz

1.9 V

+ 70 C

DDR

1.7 V

0 C

Yes

-

Surface Mount

SMD/SMT

8 Bit

4 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaQuad-II+

1.8000 V

Commercial grade

0 to 85 °C

Tray

GS8342D07BGD

-

-

-

SigmaQuad-II+ B4

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

36 Mbit

2

-

605 mA

-

Pipelined

4 M x 8

-

-

-

20 Bit

SRAM

36 Mbit

-

-

Commercial

-

-

-

-

-

-

-

-

-

SRAM

-

-

GS8160E18DGT-250V
GS8160E18DGT-250V

GSI Technology

In Stock

-

-

-

TQFP-100

-

-

-

GSI Technology

-

SDR

18

-

Parallel

GSI Technology

-

250 MHz

250 MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

0 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

1 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

TQFP

2.7 V

1.7 V

-

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS8160E18DGT

-

-

-

DCD Synchronous Burst

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

100

-

-

-

-

-

-

18 Mbit

2

-

205 mA, 225 mA

5.5 ns

Flow-Through/Pipelined

1 M x 18

-

-

-

20 Bit

SRAM

18 Mbit

-

-

Commercial

-

-

-

-

-

-

-

-

-

SRAM

-

-

GS8161E32DGD-150I
GS8161E32DGD-150I

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

-

-

-

-

-

Parallel

-

-

150 MHz

-

-

+ 85 C

-

-

- 40 C

-

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

3.6 V

2.3 V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

18 Mbit

-

-

200 mA, 210 mA

7.5 ns

-

512 k x 32

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

GS832218AD-200I
GS832218AD-200I

GSI Technology

In Stock

-

-

8 Weeks

BGA-165

YES

165

6.5 ns

GSI Technology

200 MHz

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS832218AD-200I

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

2 MWords

2000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.11

-

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 100 °C

Tray

GS832218AD

e0

No

3A991.B.2.B

Pipeline/Flow Through

Tin/Lead (Sn/Pb)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

36 Mbit

2

SYNCHRONOUS

205 mA, 240 mA

6.5 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.4 mm

18

21 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

CACHE SRAM

-

-

-

-

-

2.3 V

SRAM

15 mm

13 mm

GS842Z18CGB-100I
GS842Z18CGB-100I

GSI Technology

In Stock

-

-

7 Weeks

BGA-119

YES

119

12 ns

GSI Technology

100 MHz

-

84

GSI TECHNOLOGY

Parallel

GSI Technology

GS842Z18CGB-100I

100 MHz

-

-

+ 85 C

SDR

-

- 40 C

Yes

-

-

SMD/SMT

-

262144 words

256000

85 °C

-40 °C

PLASTIC/EPOXY

BGA

BGA, BGA119,7X17,50

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.36

Details

Yes

-

3.6 V

2.3 V

2.5 V

-

NBT SRAM

-

-

-

Tray

GS842Z18CGB

-

-

3A991.B.2.B

NBT Pipeline/Flow Through

-

FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

4 Mbit

-

SYNCHRONOUS

130 mA, 130 mA

12 ns

-

256 k x 18

3-STATE

1.99 mm

18

-

SRAM

-

0.045 A

4718592 bit

-

PARALLEL

COMMON

ZBT SRAM

-

-

-

-

-

2.3 V

SRAM

22 mm

14 mm

GS881Z18CGT-300
GS881Z18CGT-300

GSI Technology

In Stock

-

-

8 Weeks

TQFP-100

YES

100

5 ns

-

-

SDR

-

GSI TECHNOLOGY

Parallel

GSI Technology

GS881Z18CGT-300

300 MHz

-

2.7, 3.6 V

+ 70 C

-

2.3, 3 V

0 C

-

3

Surface Mount

SMD/SMT

18 Bit

512 kWords

512000

70 °C

-

PLASTIC/EPOXY

LQFP

LQFP,

-

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.51

-

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

-

2.5, 3.3 V

Commercial grade

0 to 70 °C

-

GS881Z18CGT

e3

Yes

3A991.B.2.B

-

Matte Tin (Sn)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

-

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2.7 V

-

COMMERCIAL

2.3 V

9 Mbit

1

SYNCHRONOUS

150 mA, 205 mA

5 ns

Flow-Through/Pipelined

512 k x 18

-

1.6 mm

18

-

-

9 Mbit

-

9437184 bit

Commercial

PARALLEL

-

ZBT SRAM

-

-

-

-

-

-

-

20 mm

14 mm

GS8342DT10BGD-350
GS8342DT10BGD-350

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

QDR

15

-

Parallel

GSI Technology

-

350 MHz

350 MHz

-

+ 70 C

DDR

-

0 C

Yes

-

Surface Mount

SMD/SMT

9 Bit

4 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaQuad-II+

1.8000 V

Commercial grade

0 to 85 °C

Tray

GS8342DT10BGD

-

-

-

SigmaQuad-II+ B4

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

36 Mbit

2

-

665 mA

-

Pipelined

4 M x 9

-

-

-

20 Bit

SRAM

36 Mbit

-

-

Commercial

-

-

-

-

-

-

-

-

-

SRAM

-

-

GS816218DGB-375I
GS816218DGB-375I

GSI Technology

In Stock

-

-

-

BGA-119

-

-

-

GSI Technology

-

SDR

21

-

Parallel

GSI Technology

-

375 MHz

238@Flow-Through/375@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

1 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

3.6 V

2.3 V

-

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 100 °C

Tray

GS816218DGB

-

-

-

Pipeline/Flow Through

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

119

-

-

-

-

-

-

18 Mbit

2

-

270 mA, 340 mA

4.2 ns

Flow-Through/Pipelined

1 M x 18

-

-

-

20 Bit

SRAM

18 Mbit

-

-

Industrial

-

-

-

-

-

-

-

-

-

SRAM

-

-

GS8342T36BD-250
GS8342T36BD-250

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

DDR

15

-

Parallel

GSI Technology

-

250 MHz

250 MHz

1.9 V

+ 70 C

DDR

1.7 V

0 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

1 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

N

-

-

1.9 V

1.7 V

-

Synchronous

SigmaDDR-II

1.8000 V

Commercial grade

0 to 85 °C

Tray

GS8342T36BD

-

-

-

SigmaDDR-II B2

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

36 Mbit

1

-

575 mA

-

Pipelined

1 M x 36

-

-

-

20 Bit

SRAM

36 Mbit

-

-

Commercial

-

-

-

-

-

-

-

-

-

SRAM

-

-

GS8342T18BD-400
GS8342T18BD-400

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

-

-

DDR

-

-

Parallel

-

-

400 MHz

400 MHz

-

+ 70 C

-

-

0 C

-

-

Surface Mount

SMD/SMT

18 Bit

2 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FBGA

1.9 V

1.7 V

-

Synchronous

-

1.8000 V

Commercial grade

0 to 85 °C

-

GS8342T18BD

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

165

-

-

-

-

-

-

36 Mbit

1

-

600 mA

-

Pipelined

2 M x 18

-

-

-

21 Bit

-

36 Mbit

-

-

Commercial

-

-

-

-

-

-

-

-

-

-

-

-

In Stock

-

-

-

-

YES

8

-

-

10 MHz

-

-

MICROCHIP TECHNOLOGY INC

-

Microchip Technology Inc

25AA160AT-I/SNG

-

-

-

-

-

-

-

-

1

-

-

-

2048 words

2000

85 °C

-40 °C

PLASTIC/EPOXY

SOP

3.90 MM, ROHS COMPLIANT, PLASTIC, SOIC-8

SOP8,.25

RECTANGULAR

SMALL OUTLINE

Not Recommended

SOIC

40

5.26

-

Yes

-

-

-

2.5 V

-

-

-

-

-

-

-

e3

Yes

EAR99

-

Matte Tin (Sn)

-

8542.32.00.51

EEPROMs

CMOS

DUAL

GULL WING

260

1

1.27 mm

compliant

8

R-PDSO-G8

Not Qualified

5.5 V

2/5 V

INDUSTRIAL

1.8 V

-

-

SYNCHRONOUS

0.006 mA

-

-

2KX8

-

1.75 mm

8

-

-

-

0.000001 A

16384 bit

-

SERIAL

-

EEPROM

SPI

1000000 Write/Erase Cycles

5 ms

200

HARDWARE/SOFTWARE

-

-

4.9 mm

3.9 mm

GS8672Q37BGE-300
GS8672Q37BGE-300

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

-

15

-

Parallel

GSI Technology

-

300 MHz

-

-

+ 70 C

QDR-II

-

0 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

-

1.9 V

1.7 V

-

-

SigmaQuad-II+

-

-

-

Tray

GS8672Q37BGE

-

-

-

SigmaQuad-II+

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

72 Mbit

-

-

1.48 A

-

-

2 M x 36

-

-

-

-

SRAM

-

-

72

-

-

-

-

-

-

-

-

-

-

SRAM

-

-

GS8342DT10BGD-333
GS8342DT10BGD-333

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

QDR

15

-

Parallel

GSI Technology

-

333 MHz

333 MHz

-

+ 70 C

DDR

-

0 C

Yes

-

Surface Mount

SMD/SMT

9 Bit

4 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaQuad-II+

1.8000 V

Commercial grade

0 to 85 °C

Tray

GS8342DT10BGD

-

-

-

SigmaQuad-II+ B4

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

36 Mbit

2

-

605 mA

-

Pipelined

4 M x 9

-

-

-

20 Bit

SRAM

36 Mbit

-

-

Commercial

-

-

-

-

-

-

-

-

-

SRAM

-

-

GS8182D09BD-333
GS8182D09BD-333

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

QDR

18

-

Parallel

GSI Technology

-

333 MHz

333 MHz

1.9 V

+ 70 C

DDR

1.7 V

0 C

Yes

-

Surface Mount

SMD/SMT

9 Bit

2 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaQuad-II

1.8000 V

Commercial grade

0 to 70 °C

Tray

GS8182D09BD

-

-

-

SigmaQuad-II

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

18 Mbit

2

-

515 mA

-

Pipelined

2 M x 9

-

-

-

19 Bit

SRAM

18 Mbit

-

-

Commercial

-

-

-

-

-

-

-

-

-

SRAM

-

-

GS8182S18BGD-375
GS8182S18BGD-375

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

DDR

18

-

Parallel

GSI Technology

-

375 MHz

375 MHz

1.9 V

+ 70 C

DDR

1.7 V

0 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

1 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaSIO DDR-II

1.8000 V

Commercial grade

0 to 70 °C

Tray

GS8182S18BGD

-

-

-

SigmaSIO DDR-II

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

18 Mbit

2

-

680 mA

-

Pipelined

1 M x 18

-

-

-

19 Bit

SRAM

18 Mbit

-

-

Commercial

-

-

-

-

-

-

-

-

-

SRAM

-

-

GS8342TT10BGD-300I
GS8342TT10BGD-300I

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

DDR

15

-

Parallel

GSI Technology

-

300 MHz

300 MHz

-

+ 85 C

DDR

-

- 40 C

Yes

-

Surface Mount

SMD/SMT

9 Bit

4 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaDDR-II+

1.8000 V

Industrial grade

-40 to 100 °C

Tray

GS8342TT10BGD

-

-

-

SigmaDDR-II+ B2

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

36 Mbit

1

-

460 mA

-

Pipelined

4 M x 9

-

-

-

21 Bit

SRAM

36 Mbit

-

-

Industrial

-

-

-

-

-

-

-

-

-

SRAM

-

-

GS8160E18DGT-200IV
GS8160E18DGT-200IV

GSI Technology

In Stock

-

-

-

TQFP-100

-

-

-

GSI Technology

-

SDR

18

-

Parallel

GSI Technology

-

200 MHz

200 MHz

2, 2.7 V

+ 100 C

SDR

1.7, 2.3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

1 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

TQFP

2.7 V

1.7 V

-

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 85 °C

Tray

GS8160E18DGT

-

-

-

DCD Synchronous Burst

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

100

-

-

-

-

-

-

18 Mbit

2

-

210 mA, 215 mA

6.5 ns

-

1 M x 18

-

-

-

-

SRAM

18 Mbit

-

-

Industrial

-

-

-

-

-

-

-

-

-

SRAM

-

-