IRF610PBF alternative parts: IRF630NPBF

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Part Number
Manufacturer:
Description:
MOSFET N-CH 200V 3.3A TO-220AB
MOSFET N-CH 200V 9.3A TO-220AB
Factory Lead Time:
8 Weeks
12 Weeks
Mount:
Through Hole
Through Hole
Mounting Type:
Through Hole
Through Hole
Package / Case:
TO-220-3
TO-220-3
Number of Pins:
3
3
Supplier Device Package:
TO-220AB
-
Weight:
6.000006g
-
Current - Continuous Drain (Id) @ 25℃:
3.3A Tc
9.3A Tc
Drive Voltage (Max Rds On, Min Rds On):
10V
10V
Number of Elements:
1
1
Power Dissipation (Max):
36W Tc
82W Tc
Turn Off Delay Time:
14 ns
27 ns
Operating Temperature:
-55°C~150°C TJ
-55°C~175°C TJ
Packaging:
Tube
Tube
Published:
1997
2004
Part Status:
Active
Active
Moisture Sensitivity Level (MSL):
1 (Unlimited)
1 (Unlimited)
Resistance:
1.5Ohm
300mOhm
Max Operating Temperature:
150°C
-
Min Operating Temperature:
-55°C
-
Voltage - Rated DC:
200V
200V
Current Rating:
3.3A
9.3A
Number of Channels:
1
-
Voltage:
200V
-
Element Configuration:
Single
Single
Power Dissipation:
36W
82W
Turn On Delay Time:
8.2 ns
7.9 ns
FET Type:
N-Channel
N-Channel
Rds On (Max) @ Id, Vgs:
1.5Ohm @ 2A, 10V
300m Ω @ 5.4A, 10V
Vgs(th) (Max) @ Id:
4V @ 250μA
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds:
140pF @ 25V
575pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:
8.2nC @ 10V
35nC @ 10V
Rise Time:
17ns
14ns
Drain to Source Voltage (Vdss):
200V
-
Vgs (Max):
±20V
±20V
Fall Time (Typ):
8.9 ns
15 ns
Continuous Drain Current (ID):
3.3A
9.3A
Threshold Voltage:
4V
4V
Gate to Source Voltage (Vgs):
20V
20V
Drain to Source Breakdown Voltage:
200V
200V
Input Capacitance:
140pF
-
Recovery Time:
310 ns
176 ns
Drain to Source Resistance:
1.5Ohm
-
Rds On Max:
1.5 Ω
-
Nominal Vgs:
4 V
4 V
Height:
9.01mm
8.77mm
Length:
10.41mm
10.54mm
Width:
4.7mm
4.69mm
REACH SVHC:
Unknown
No SVHC
Radiation Hardening:
No
No
RoHS Status:
ROHS3 Compliant
ROHS3 Compliant
Lead Free:
Lead Free
Contains Lead, Lead Free
Transistor Element Material:
-
SILICON
Series:
-
HEXFET®
JESD-609 Code:
-
e3
Number of Terminations:
-
3
Termination:
-
Through Hole
ECCN Code:
-
EAR99
Terminal Finish:
-
MATTE TIN OVER NICKEL
Additional Feature:
-
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Peak Reflow Temperature (Cel):
-
250
Time@Peak Reflow Temperature-Max (s):
-
30
Operating Mode:
-
ENHANCEMENT MODE
Case Connection:
-
DRAIN
Transistor Application:
-
SWITCHING
JEDEC-95 Code:
-
TO-220AB
Dual Supply Voltage:
-
200V
Avalanche Energy Rating (Eas):
-
94 mJ
IRF610PBF

IRF610PBF

Vishay Siliconix

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