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UMT2907AT106 alternative parts: RN1318(TE85L,F), RN1314(TE85L,F)

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Part Number	UMT2907AT106	RN1318(TE85L,F)	RN1314(TE85L,F)
Manufacturer:	ROHM Semiconductor	Toshiba Semiconductor and Storage	Toshiba Semiconductor and Storage
Description:	TRANS PNP 60V 0.6A SOT-323	Trans Digital BJT NPN 50V 100mA 3-Pin USM T/R	Trans Digital BJT NPN 50V 100mA 3-Pin USM T/R
Factory Lead Time:	13 Weeks	12 Weeks	16 Weeks
Mount:	Surface Mount	Surface Mount	Surface Mount
Mounting Type:	Surface Mount	Surface Mount	Surface Mount
Package / Case:	SC-70, SOT-323	SC-70, SOT-323	SC-70, SOT-323
Number of Pins:	3	3	3
Transistor Element Material:	SILICON	-	-
Collector-Emitter Breakdown Voltage:	60V	50V	50V
Collector-Emitter Saturation Voltage:	-1.6V	-	-
Number of Elements:	1	-	-
hFEMin:	50	50	50
Operating Temperature:	150°C TJ	-	-
Packaging:	Tape & Reel (TR)	Tape & Reel (TR)	Tape & Reel (TR)
Published:	2006	2009	2009
JESD-609 Code:	e1	-	-
Pbfree Code:	yes	-	-
Part Status:	Active	Active	Active
Moisture Sensitivity Level (MSL):	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
Number of Terminations:	3	-	-
ECCN Code:	EAR99	-	-
Terminal Finish:	TIN SILVER COPPER	-	-
HTS Code:	8541.21.00.75	-	-
Voltage - Rated DC:	-60V	-	-
Max Power Dissipation:	200mW	100mW	100mW
Terminal Position:	DUAL	-	-
Terminal Form:	GULL WING	-	-
Peak Reflow Temperature (Cel):	260	-	-
Current Rating:	-600mA	-	-
Time@Peak Reflow Temperature-Max (s):	10	-	-
Base Part Number:	T2907A	RN131*	RN131*
Pin Count:	3	-	-
Element Configuration:	Single	Single	Single
Power - Max:	200mW	-	-
Transistor Application:	SWITCHING	-	-
Gain Bandwidth Product:	200MHz	-	-
Polarity/Channel Type:	PNP	-	-
Transistor Type:	PNP	NPN - Pre-Biased	NPN - Pre-Biased
Collector Emitter Voltage (VCEO):	1.6V	50V	50V
Max Collector Current:	600mA	100mA	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 150mA 10V	50 @ 10mA 5V	50 @ 10mA 5V
Current - Collector Cutoff (Max):	100nA	500nA	500nA
Vce Saturation (Max) @ Ib, Ic:	1.6V @ 50mA, 500mA	300mV @ 250μA, 5mA	300mV @ 250μA, 5mA
Transition Frequency:	200MHz	-	-
Max Breakdown Voltage:	60V	50V	50V
Collector Base Voltage (VCBO):	-60V	-	-
Emitter Base Voltage (VEBO):	-5V	-	-
Continuous Collector Current:	-600mA	100mA	100mA
VCEsat-Max:	0.6 V	-	-
Turn Off Time-Max (toff):	100ns	-	-
Collector-Base Capacitance-Max:	7pF	-	-
REACH SVHC:	No SVHC	-	-
Radiation Hardening:	No	No	No
RoHS Status:	ROHS3 Compliant	RoHS Compliant	RoHS Compliant
Lead Free:	Lead Free	-	-
Max Operating Temperature:	-	150°C	150°C
Min Operating Temperature:	-	-55°C	-55°C
Polarity:	-	NPN	NPN
Power Dissipation:	-	100mW	100mW
Frequency - Transition:	-	250MHz	250MHz
Resistor - Base (R1):	-	47 k Ω	1 k Ω
Resistor - Emitter Base (R2):	-	10 k Ω	10 k Ω