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Advanced Transistors - FETs, MOSFETs - Single

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Mounting Type

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Base Product Number

Brand

Collector- Emitter Voltage VCEO Max

Contact Sizes

DC Collector/Base Gain hfe Min

Emitter- Base Voltage VEBO

Factory Pack QuantityFactory Pack Quantity

Id - Continuous Drain Current

Ihs Manufacturer

Manufacturer

Manufacturer Part Number

Maximum DC Collector Current

Maximum Operating Temperature

Mfr

Minimum Operating Temperature

Mounting Styles

Number of Elements

Operating Temperature-Max

Package

Package Body Material

Package Description

Package Shape

Package Style

Part Life Cycle Code

Pd - Power Dissipation

Product Status

Rds On - Drain-Source Resistance

Risk Rank

RoHS

Transistor Polarity

Transition Frequency-Nom (fT)

Unit Weight

Vds - Drain-Source Breakdown Voltage

Vgs - Gate-Source Voltage

Vgs th - Gate-Source Threshold Voltage

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Packaging

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Subcategory

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Technology

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Current - Average Rectified (Io)

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Includes

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Capacitance @ Vr, F

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Detent

Pulses per Revolution

Collector Current-Max (IC)

DC Current Gain-Min (hFE)

Rotational Life (Cycles Min)

Continuous Collector Current

Collector-Emitter Voltage-Max

Highest Frequency Band

Reverse Recovery Time (trr)

Collector-Base Capacitance-Max

Features

Product Category

Height Seated (Max)

Material Flammability Rating

Ratings

BLV20
BLV20

Advanced

In Stock

-

-

-

01005 (0402 Metric)

NO

-

-

-

1005

-

4

SILICON

-

Advanced Semiconductor, Inc.

35 V

-

10

4 V

1

-

ASI SEMICONDUCTOR INC

Advanced Semiconductor, Inc.

BLV20

2.5 A

+ 200 C

Stackpole Electronics Inc

- 65 C

Screw Mount

-

200 °C

Bulk

CERAMIC, METAL-SEALED COFIRED

FLANGE MOUNT, O-CRFM-F4

ROUND

FLANGE MOUNT

Active

20 W

Active

-

4.35

Details

NPN

-

-

-

-

-

-55°C ~ 125°C

Tray

RMCF

0.016 L x 0.008 W (0.40mm x 0.20mm)

±1%

2

EAR99

±200ppm/°C

-

RF Bipolar Power

402 kOhms

-

Thick Film

0.03W, 1/32W

-

Transistors

-

Si

-

RADIAL

-

FLAT

-

-

unknown

-

4

-

-

O-CRFM-F4

Not Qualified

-

175 MHz

-

-

-

Single

-

-

-

-

-

-

AMPLIFIER

-

-

NPN

RF Bipolar Transistors

Bipolar Power

-

-

-

-

-

20 W

-

-

1 A

10

-

1 A

35 V

VERY HIGH FREQUENCY BAND

-

-

Automotive AEC-Q200

RF Bipolar Transistors

0.006 (0.15mm)

-

AEC-Q200

BLW50F
BLW50F

Advanced

In Stock

-

-

-

SOT-123

NO

-

-

-

-

-

4

SILICON

-

Advanced Semiconductor, Inc.

55 V

-

19

4 V

1

-

ASI SEMICONDUCTOR INC

Advanced Semiconductor, Inc.

BLW50F

7.5 A

+ 200 C

PEI-Genesis

- 65 C

Screw Mount

-

200 °C

Bulk

CERAMIC, METAL-SEALED COFIRED

FLANGE MOUNT, O-CRFM-F4

ROUND

FLANGE MOUNT

Active

87 W

Active

-

4.35

Details

NPN

-

0.561650 oz

-

-

-

-

Tray

*

-

-

-

EAR99

-

-

RF Bipolar Power

-

-

-

-

-

Transistors

-

Si

-

RADIAL

-

FLAT

-

-

unknown

-

4

-

-

O-CRFM-F4

Not Qualified

-

30 MHz

-

-

-

Single

-

-

-

-

-

-

-

-

-

NPN

RF Bipolar Transistors

Bipolar Power

-

-

-

-

-

94 W

-

-

3.25 A

15

-

3.25 A

55 V

VERY HIGH FREQUENCY BAND

-

100 pF

-

RF Bipolar Transistors

-

-

-

BLX98
BLX98

Advanced

In Stock

-

-

Free Hanging (In-Line)

-

-

-

Circular

Aluminum Alloy

-

Polychloroprene

-

-

KPSE

Advanced Semiconductor, Inc.

40 V

16 (4), 20 (8)

-

4 V

-

-

-

Advanced Semiconductor, Inc.

-

-

-

ITT Cannon, LLC

-

Through Hole

-

-

Bulk

-

-

-

-

-

5.3 W

Active

-

-

Details

NPN

-

-

-

-

-

-55°C ~ 125°C

Tray

KPSE

-

-

-

-

-

Plug Housing

For Female Sockets

-

12

-

-

Bayonet Lock

Transistors

Crimp

Si

-

-

N (Normal)

-

Shielded

Environment Resistant

-

Chromate over Cadmium

-

14-12

-

-

-

-

40 MHz to 860 MHz

Olive Drab

-

-

Single

Contacts Not Included

-

-

-

-

-

-

-

-

-

RF Bipolar Transistors

Bipolar Power

-

-

-

-

-

-

-

-

-

-

-

2 A

-

-

-

-

Backshell, Coupling Nut, Shrink Boot Adapter

RF Bipolar Transistors

-

-

-

BLV33
BLV33

Advanced

In Stock

-

-

Stud Mount

DO-203AB, DO-5, Stud

NO

-

-

-

DO-5

-

4

SILICON

-

Advanced Semiconductor, Inc.

33 V

-

15

4 V

-

-

ASI SEMICONDUCTOR INC

Advanced Semiconductor, Inc.

BLV33

20 A

+ 200 C

Microchip Technology

- 65 C

Through Hole

-

200 °C

Bulk

CERAMIC, METAL-SEALED COFIRED

POST/STUD MOUNT, O-CRPM-F4

ROUND

POST/STUD MOUNT

Active

132 W

Active

-

5.09

Details

NPN

750 MHz

-

-

-

-

-

Tray

-

-

-

-

EAR99

-

-

RF Bipolar Power

-

-

-

-

-

Transistors

-

Standard

-

RADIAL

-

FLAT

-

-

unknown

-

-

-

-

O-CRPM-F4

Not Qualified

-

224 MHz

-

-

-

Single

-

Fast Recovery =< 500ns, > 200mA (Io)

-

975 mV @ 70 A

-

175°C (Max)

AMPLIFIER

100 V

70A

NPN

RF Bipolar Transistors

Bipolar Power

-

-

300pF @ 10V, 1MHz

-

-

132 W

-

-

12.5 A

15

-

12.5 A

33 V

VERY HIGH FREQUENCY BAND

50 ns

-

-

RF Bipolar Transistors

-

-

-

MRF5176
MRF5176

Advanced

In Stock

-

-

-

Case244-04

NO

-

-

-

-

-

4

SILICON

-

Advanced Semiconductor, Inc.

33 V

-

10

4 V

-

-

ASI SEMICONDUCTOR INC

Advanced Semiconductor, Inc.

MRF5176

-

+ 200 C

-

- 65 C

Through Hole

1

200 °C

-

CERAMIC, METAL-SEALED COFIRED

POST/STUD MOUNT, O-CRPM-F4

ROUND

POST/STUD MOUNT

Active

30 W

-

-

5.13

Details

NPN

-

-

-

-

-

-

Tray

-

-

-

-

EAR99

-

-

RF Bipolar Power

-

-

-

-

-

Transistors

-

Si

-

RADIAL

-

FLAT

-

-

unknown

-

-

-

-

O-CRPM-F4

Not Qualified

-

400 MHz

-

-

-

SINGLE

-

-

-

-

-

-

AMPLIFIER

-

-

NPN

RF Bipolar Transistors

Bipolar Power

-

-

-

-

-

30 W

-

-

2 A

10

-

2 A

33 V

ULTRA HIGH FREQUENCY BAND

-

25 pF

-

RF Bipolar Transistors

-

-

-

MRF141
MRF141

Advanced

In Stock

-

-

-

221-11-3

-

-

-

-

-

-

-

-

-

Advanced Semiconductor, Inc.

-

-

-

-

-

16 A

-

Advanced Semiconductor, Inc.

-

-

+ 200 C

-

- 65 C

SMD/SMT

-

-

-

-

-

-

-

-

300 W

-

5 mOhms

-

Details

N-Channel

-

-

65 V

40 V

5 V

-

Tray

-

-

-

-

-

-

-

-

-

-

-

-

-

MOSFETs

-

Si

-

-

-

-

-

-

-

-

-

-

-

-

-

-

175 MHz

-

-

-

Single

-

-

-

-

150 W

-

-

-

-

-

RF MOSFET Transistors

-

-

20 dB

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RF MOSFET Transistors

-

-

-

BLV21
BLV21

Advanced

In Stock

-

-

-

SOT-123

NO

-

-

-

-

-

4

SILICON

-

Advanced Semiconductor, Inc.

35 V

-

5

4 V

1

-

ASI SEMICONDUCTOR INC

Advanced Semiconductor, Inc.

BLV21

-

+ 200 C

-

- 65 C

Screw Mount

-

200 °C

-

CERAMIC, METAL-SEALED COFIRED

FLANGE MOUNT, O-CRFM-F4

ROUND

FLANGE MOUNT

Active

36 W

-

-

5.08

Details

NPN

-

0.374172 oz

-

-

-

-

Tray

-

-

-

-

EAR99

-

-

RF Bipolar Power

-

-

-

-

-

Transistors

-

Si

-

RADIAL

-

FLAT

-

-

unknown

-

4

-

-

O-CRFM-F4

Not Qualified

-

175 MHz

-

-

-

Single

-

-

-

-

-

-

AMPLIFIER

-

-

NPN

RF Bipolar Transistors

Bipolar Power

-

-

-

-

-

36 W

-

-

1.75 A

10

-

1.75 A

35 V

VERY HIGH FREQUENCY BAND

-

50 pF

-

RF Bipolar Transistors

-

-

-

BLV57
BLV57

Advanced

In Stock

-

-

Panel Mount

SOT-161A

YES

-

-

-

-

-

8

SILICON

-

Advanced Semiconductor, Inc.

27 V

-

15

3.5 V

-

-

ASI SEMICONDUCTOR INC

Advanced Semiconductor, Inc.

BLV57

4 A

+ 200 C

Grayhill Inc.

- 65 C

Screw Mount

-

200 °C

Bulk

CERAMIC, METAL-SEALED COFIRED

FLANGE MOUNT, R-CDFM-F8

RECTANGULAR

FLANGE MOUNT

Active

77 W

Active

-

5.09

Details

NPN

2500 MHz

-

-

-

-

-

Tray

62VG

-

-

-

EAR99

-

-

RF Bipolar Power

-

-

-

-

-

Transistors

-

Si

3.175V ~ 3.425V

DUAL

User Selectable

FLAT

-

-

unknown

-

8

-

Cable with Connector

R-CDFM-F8

Not Qualified

1/4 Dia Flatted End

860 MHz

-

NPN - Open Collector, Quadrature, 2-Bit

-

Single

-

-

-

-

-

-

AMPLIFIER

-

-

NPN

RF Bipolar Transistors

Bipolar Power

-

-

-

Yes

Optical

77 W

Yes

-

2 A

15

1M

2 A

27 V

ULTRA HIGH FREQUENCY BAND

-

-

-

RF Bipolar Transistors

-

-

-

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