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  • Collector- Emitter Voltage VCEO Max
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  • Continuous Collector Current at 25 C
  • Current - Collector Pulsed (Icm)
  • Current-Collector (Ic) (Max)
  • Factory Pack QuantityFactory Pack Quantity
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  • IGBT Type

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Manufacturer

Bourns Transistors - IGBTs - Single

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5 Results

Product

Inventory

Pricing(USD)

Quantity

Datasheet

RoHS

Mounting Type

Package / Case

Supplier Device Package

Base Product Number

Brand

Collector- Emitter Voltage VCEO Max

Collector-Emitter Saturation Voltage

Continuous Collector Current at 25 C

Continuous Collector Current Ic Max

Current-Collector (Ic) (Max)

Factory Pack QuantityFactory Pack Quantity

Manufacturer

Maximum Collector Emitter Voltage

Maximum Gate Emitter Voltage

Maximum Operating Temperature

Mfr

Minimum Operating Temperature

Moisture Sensitive

Mounting Styles

Package

Package Type

Pd - Power Dissipation

Product Status

RoHS

Test Conditions

Operating Temperature

Packaging

Series

Subcategory

Technology

Configuration

Input Type

Power - Max

Product Type

Voltage - Collector Emitter Breakdown (Max)

Vce(on) (Max) @ Vge, Ic

IGBT Type

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Reverse Recovery Time (trr)

Product Category

BIDW50N65T
BIDW50N65T

Bourns Inc.

2796
-

Through Hole

TO-247-3

TO-247

BIDW50N

Bourns

650 V

1.65 V

100 A

100 A

100 A

600

Bourns

650 V

±20V

+ 150 C

Bourns Inc.

- 55 C

-

Through Hole

Tube

TO-247

416 W

Active

Details

400V, 50A, 10Ohm, 15V

-55°C ~ 150°C (TJ)

Tube

-

IGBTs

Si

Single Diode

Standard

416 W

IGBT Transistors

650 V

2.2V @ 15V, 50A

Trench Field Stop

123 nC

150 A

37ns/125ns

3mJ (on), 1.1mJ (off)

37.5 ns

IGBT Transistors

BIDNW30N60H3
BIDNW30N60H3

Bourns Inc.

600

-

-

Through Hole

TO-247-3

TO-247N-3L

BIDNW30N

Bourns

600 V

1.65 V

60 A

60 A

60 A

600

Bourns

600 V

±20V

+ 150 C

Bourns Inc.

- 55 C

-

Through Hole

Tube

TO-247N

230 W

Active

Details

400V, 30A, 10Ohm, 15V

-55°C ~ 150°C (TJ)

Tube

-

IGBTs

Si

Single Diode

Standard

230 W

IGBT Transistors

600 V

2V @ 15V, 30A

Trench Field Stop

76 nC

120 A

30ns/67ns

1.85mJ (on), 450μJ (off)

28 ns

IGBT Transistors

BIDW20N60T
BIDW20N60T

Bourns Inc.

2315

-

-

Through Hole

TO-247-3

TO-247

BIDW20N

Bourns

600 V

1.7 V

40 A

40 A

40 A

600

Bourns

600 V

±20V

+ 150 C

Bourns Inc.

- 55 C

-

Through Hole

Tube

TO-247

192 W

Active

Details

400V, 20A, 10Ohm, 15V

-55°C ~ 150°C (TJ)

Tube

-

IGBTs

Si

Single Diode

Standard

192 W

IGBT Transistors

600 V

2.4V @ 15V, 20A

Trench Field Stop

52 nC

60 A

19ns/48ns

1mJ (on), 300μJ (off)

33.7 ns

IGBT Transistors

BIDW30N60T
BIDW30N60T

Bourns Inc.

1200

-

-

Through Hole

TO-247-3

TO-247

BIDW30N

Bourns

600 V

1.65 V

60 A

60 A

60 A

600

Bourns

600 V

±20V

+ 150 C

Bourns Inc.

- 55 C

-

Through Hole

Tube

TO-247

230 W

Active

Details

400V, 30A, 10Ohm, 15V

-55°C ~ 150°C (TJ)

Tube

-

IGBTs

Si

Single Diode

Standard

230 W

IGBT Transistors

600 V

1.65V @ 15V, 30A

Trench Field Stop

76 nC

90 A

30ns/67ns

1.85mJ (on), 450μJ (off)

40 ns

IGBT Transistors

BIDD05N60T
BIDD05N60T

Bourns Inc.

11046
-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

TO-252 (DPAK)

BIDD05N

Bourns

600 V

1.5 V

10 A

10 A

10 A

2500

Bourns

600 V

±30V

+ 150 C

Bourns Inc.

- 55 C

Yes

SMD/SMT

-

TO-252

82 W

Active

Details

400V, 5A, 10Ohm, 15V

-55°C ~ 150°C (TJ)

MouseReel

-

IGBTs

Si

Single Diode

Standard

82 W

IGBT Transistors

600 V

2V @ 15V, 5A

Trench Field Stop

18.5 nC

15 A

7ns/18ns

200μJ (on), 70μJ (off)

40 ns

IGBT Transistors