- Base Product Number
- Brand
- Collector- Emitter Voltage VCEO Max
- Collector-Emitter Saturation Voltage
- Configuration
- Continuous Collector Current Ic Max
- Continuous Collector Current at 25 C
- Current - Collector Pulsed (Icm)
- Current-Collector (Ic) (Max)
- Factory Pack QuantityFactory Pack Quantity
- Gate Charge
- IGBT Type
Attribute column
Manufacturer
Bourns Transistors - IGBTs - Single
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Mounting Type | Package / Case | Supplier Device Package | Base Product Number | Brand | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Continuous Collector Current Ic Max | Current-Collector (Ic) (Max) | Factory Pack QuantityFactory Pack Quantity | Manufacturer | Maximum Collector Emitter Voltage | Maximum Gate Emitter Voltage | Maximum Operating Temperature | Mfr | Minimum Operating Temperature | Moisture Sensitive | Mounting Styles | Package | Package Type | Pd - Power Dissipation | Product Status | RoHS | Test Conditions | Operating Temperature | Packaging | Series | Subcategory | Technology | Configuration | Input Type | Power - Max | Product Type | Voltage - Collector Emitter Breakdown (Max) | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Reverse Recovery Time (trr) | Product Category |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() BIDW50N65T Bourns Inc. | 2796 |
| - | Through Hole | TO-247-3 | TO-247 | BIDW50N | Bourns | 650 V | 1.65 V | 100 A | 100 A | 100 A | 600 | Bourns | 650 V | ±20V | + 150 C | Bourns Inc. | - 55 C | - | Through Hole | Tube | TO-247 | 416 W | Active | Details | 400V, 50A, 10Ohm, 15V | -55°C ~ 150°C (TJ) | Tube | - | IGBTs | Si | Single Diode | Standard | 416 W | IGBT Transistors | 650 V | 2.2V @ 15V, 50A | Trench Field Stop | 123 nC | 150 A | 37ns/125ns | 3mJ (on), 1.1mJ (off) | 37.5 ns | IGBT Transistors | ||
![]() BIDNW30N60H3 Bourns Inc. | 600 | - | - | Through Hole | TO-247-3 | TO-247N-3L | BIDNW30N | Bourns | 600 V | 1.65 V | 60 A | 60 A | 60 A | 600 | Bourns | 600 V | ±20V | + 150 C | Bourns Inc. | - 55 C | - | Through Hole | Tube | TO-247N | 230 W | Active | Details | 400V, 30A, 10Ohm, 15V | -55°C ~ 150°C (TJ) | Tube | - | IGBTs | Si | Single Diode | Standard | 230 W | IGBT Transistors | 600 V | 2V @ 15V, 30A | Trench Field Stop | 76 nC | 120 A | 30ns/67ns | 1.85mJ (on), 450μJ (off) | 28 ns | IGBT Transistors | ||
![]() BIDW20N60T Bourns Inc. | 2315 | - | - | Through Hole | TO-247-3 | TO-247 | BIDW20N | Bourns | 600 V | 1.7 V | 40 A | 40 A | 40 A | 600 | Bourns | 600 V | ±20V | + 150 C | Bourns Inc. | - 55 C | - | Through Hole | Tube | TO-247 | 192 W | Active | Details | 400V, 20A, 10Ohm, 15V | -55°C ~ 150°C (TJ) | Tube | - | IGBTs | Si | Single Diode | Standard | 192 W | IGBT Transistors | 600 V | 2.4V @ 15V, 20A | Trench Field Stop | 52 nC | 60 A | 19ns/48ns | 1mJ (on), 300μJ (off) | 33.7 ns | IGBT Transistors | ||
![]() BIDW30N60T Bourns Inc. | 1200 | - | - | Through Hole | TO-247-3 | TO-247 | BIDW30N | Bourns | 600 V | 1.65 V | 60 A | 60 A | 60 A | 600 | Bourns | 600 V | ±20V | + 150 C | Bourns Inc. | - 55 C | - | Through Hole | Tube | TO-247 | 230 W | Active | Details | 400V, 30A, 10Ohm, 15V | -55°C ~ 150°C (TJ) | Tube | - | IGBTs | Si | Single Diode | Standard | 230 W | IGBT Transistors | 600 V | 1.65V @ 15V, 30A | Trench Field Stop | 76 nC | 90 A | 30ns/67ns | 1.85mJ (on), 450μJ (off) | 40 ns | IGBT Transistors | ||
![]() BIDD05N60T Bourns Inc. | 11046 |
| - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK) | BIDD05N | Bourns | 600 V | 1.5 V | 10 A | 10 A | 10 A | 2500 | Bourns | 600 V | ±30V | + 150 C | Bourns Inc. | - 55 C | Yes | SMD/SMT | - | TO-252 | 82 W | Active | Details | 400V, 5A, 10Ohm, 15V | -55°C ~ 150°C (TJ) | MouseReel | - | IGBTs | Si | Single Diode | Standard | 82 W | IGBT Transistors | 600 V | 2V @ 15V, 5A | Trench Field Stop | 18.5 nC | 15 A | 7ns/18ns | 200μJ (on), 70μJ (off) | 40 ns | IGBT Transistors |