- Configuration
- DS Breakdown Voltage-Min
- Drain Current-Max (ID)
- Drain-source On Resistance-Max
- FET Technology
- Ihs Manufacturer
- JESD-30 Code
- Manufacturer
- Manufacturer Part Number
- Number of Elements
- Number of Terminals
- Operating Mode
Attribute column
Manufacturer
Fujitsu Transistors - FETs, MOSFETs - Single
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Surface Mount | Number of Terminals | Transistor Element Material | Drain Current-Max (ID) | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Number of Elements | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Risk Rank | Turn-off Time-Max (toff) | Turn-on Time-Max (ton) | Additional Feature | HTS Code | Subcategory | Terminal Position | Terminal Form | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Configuration | Operating Mode | Case Connection | Transistor Application | Polarity/Channel Type | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Power Dissipation Ambient-Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 2SK899 Fujitsu | In Stock | - | - | NO | 3 | SILICON | 18 A | FUJI ELECTRIC CO LTD | Fuji Electric Co Ltd | 2SK899 | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-3P | 5.82 | 570 ns | 195 ns | - | - | FET General Purpose Power | SINGLE | THROUGH-HOLE | unknown | 3 | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 18 A | 0.33 Ω | 72 A | 500 V | - | METAL-OXIDE SEMICONDUCTOR | 125 W | 125 W | ||
FMV11N90E Fujitsu | In Stock | - | - | NO | 3 | SILICON | 11 A | FUJI ELECTRIC CO LTD | Fuji Electric Co Ltd | FMV11N90E | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Active | TO-220AB | 5.74 | - | - | LOW NOISE | 8541.29.00.95 | - | SINGLE | THROUGH-HOLE | unknown | 3 | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | TO-220AB | 11 A | 1 Ω | 44 A | 900 V | 811.9 mJ | METAL-OXIDE SEMICONDUCTOR | 120 W | - | ||
2SK3532-01MR Fujitsu | In Stock | - | - | NO | 3 | SILICON | 6 A | FUJI ELECTRIC CO LTD | Fuji Electric Co Ltd | 2SK3532-01MR | 1 | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-220AB | 5.8 | - | - | - | 8541.29.00.95 | - | SINGLE | THROUGH-HOLE | unknown | 3 | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | TO-220AB | - | 2.5 Ω | 24 A | 900 V | 244 mJ | METAL-OXIDE SEMICONDUCTOR | - | - |