- Case Connection
- Collector Current-Max (IC)
- Collector-Emitter Voltage-Max
- Configuration
- ECCN Code
- Ihs Manufacturer
- JESD-30 Code
- Number of Terminals
- Package Body Material
- Package Description
- Package Shape
- Package Style
Attribute column
Manufacturer
Fujitsu Transistors - IGBTs - Single
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Surface Mount | Material | Number of Terminals | Transistor Element Material | Exterior Housing Material | Coercive Force | Gross Weight | Ihs Manufacturer | Maximum Operating Temperature | Number of Elements | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Turn-off Time-Nom (toff) | Turn-on Time-Nom (ton) | ECCN Code | Type | Terminal Position | Terminal Form | Reach Compliance Code | JESD-30 Code | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | Collector-Emitter Voltage-Max | Gate-Emitter Voltage-Max | VCEsat-Max | Gate-Emitter Thr Voltage-Max | Grade | Diameter | Height |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 2MBI200VA-060-50 FUJITSU Limited | In Stock | - | Datasheet | NO | - | 7 | SILICON | 2 | - | - | FUJITSU LTD | - | - | - | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X7 | RECTANGULAR | FLANGE MOUNT | Active | 600 ns | 650 ns | EAR99 | - | UPPER | UNSPECIFIED | compliant | R-XUFM-X7 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | MOTOR CONTROL | N-CHANNEL | - | 200 A | 600 V | - | - | - | - | - | - | ||
2MBI1200VG-170E FUJITSU Semiconductor Limited | In Stock | - | Datasheet | NO | - | 10 | SILICON | - | - | - | FUJITSU LTD | - | 2 | 175 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PUFM-X10 | RECTANGULAR | FLANGE MOUNT | Active | 2620 ns | 3790 ns | EAR99 | - | UPPER | UNSPECIFIED | unknown | R-PUFM-X10 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | POWER CONTROL | N-CHANNEL | - | 1600 A | 1700 V | - | - | - | - | - | - | ||
2MBI600VG-170E FUJITSU Limited | In Stock | - | Datasheet | NO | - | 10 | SILICON | - | - | - | FUJITSU LTD | - | 2 | 175 °C | PLASTIC/EPOXY | MODULE-10 | RECTANGULAR | FLANGE MOUNT | Active | 2070 ns | 2280 ns | EAR99 | - | UPPER | UNSPECIFIED | compliant | R-PUFM-X10 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | POWER CONTROL | N-CHANNEL | 4410 W | 800 A | 1700 V | 20 V | 2.46 V | 7 V | - | - | - | ||
2MBI100VA-060-50 FUJITSU Semiconductor Limited | In Stock | - | Datasheet | NO | - | 7 | SILICON | 2 | - | 8.94 | FUJITSU LTD | - | - | - | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X7 | RECTANGULAR | FLANGE MOUNT | Active | 600 ns | 650 ns | EAR99 | - | UPPER | UNSPECIFIED | unknown | R-XUFM-X7 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | MOTOR CONTROL | N-CHANNEL | - | 100 A | 600 V | - | - | - | - | - | - | ||
2MBI150VA-060-50 FUJITSU Limited | In Stock | - | Datasheet | NO | Sm/AlNiCo alloy with Ni-Cu-Ni coating | 7 | SILICON | 2 | by magnetic induction Hcb/ by magnetization Hcj - not less than 868/955 kA/m | 6.21 | FUJITSU LTD | Tmax - 80 °C | - | - | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X7 | RECTANGULAR | FLANGE MOUNT | Active | 600 ns | 650 ns | EAR99 | RUICHI Samarium Cobalt Disc Magnet | UPPER | UNSPECIFIED | compliant | R-XUFM-X7 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | MOTOR CONTROL | N-CHANNEL | - | 150 A | 600 V | - | - | - | N35 (normal) | 15 mm | 5 mm |