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Manufacturer

GeneSiC Semiconductor Transistors - FETs, MOSFETs - Single

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88 Results

Product

Inventory

Pricing(USD)

Quantity

Datasheet

RoHS

Factory Lead Time

Mount

Mounting Type

Package / Case

Surface Mount

Number of Pins

Supplier Device Package

Weight

Base Product Number

Brand

Channel Mode

Continuous Drain Current Id

Current - Continuous Drain (Id) @ 25℃

Drive Voltage (Max Rds On, Min Rds On)

Factory Pack QuantityFactory Pack Quantity

Forward Transconductance - Min

Frequency-Max

Id - Continuous Drain Current

Manufacturer

Maximum Operating Temperature

Mfr

Minimum Operating Temperature

Mounting Styles

Operating Supply Voltage (Max)

Operating Supply Voltage (Min)

Operating Temp Range

Package

Pd - Power Dissipation

Power Dissipation (Max)

Product Depth (mm)

Product Status

Programmable

Qg - Gate Charge

Rds On - Drain-Source Resistance

RoHS

Standard Frequency

Transistor Polarity

Turn Off Delay Time

Typical Turn-Off Delay Time

Typical Turn-On Delay Time

Unit Weight

Usage Level

Vds - Drain-Source Breakdown Voltage

Vgs - Gate-Source Voltage

Vgs th - Gate-Source Threshold Voltage

Operating Temperature

Packaging

Published

Series

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Type

Subcategory

Technology

Voltage - Supply

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Frequency Stability

Base Part Number

Output

Pin Count

Symmetry-Max

Polarity

Configuration

Number of Channels

Number of Circuits

Load Capacitance

Element Configuration

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Vgs (Max)

Polarity/Channel Type

Fall Time (Typ)

Input

Product Type

Transistor Type

Continuous Drain Current (ID)

Ratio - Input:Output

PLL

Differential - Input:Output

Screening Level

Channel Type

Main Purpose

FET Feature

Product

Product Category

Product Length (mm)

Height

Product Height (mm)

REACH SVHC

RoHS Status

GA04JT17-247
GA04JT17-247

GeneSiC Semiconductor

In Stock

-

Datasheet

18 Weeks

Through Hole

Through Hole

TO-247-3

-

3

-

-

-

-

-

-

4A Tc 95°C

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

106W Tc

-

-

-

-

-

-

-

-

19 ns

-

-

-

-

-

-

-

175°C TJ

Tube

2013

-

Obsolete

1 (Unlimited)

EAR99

-

-

-

-

NOT SPECIFIED

NOT SPECIFIED

-

-

-

-

-

NPN

-

1

-

-

Single

106W

10 ns

-

480m Ω @ 4A

-

-

-

28ns

1700V

-

-

50 ns

-

-

-

15A

-

-

-

-

-

-

-

-

-

-

25.934mm

-

No SVHC

RoHS Compliant

GA03JT12-247
GA03JT12-247

GeneSiC Semiconductor

In Stock

-

Datasheet

18 Weeks

Through Hole

Through Hole

TO-247-3

-

3

-

6.390011g

-

-

-

-

3A Tc 95°C

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

15W Tc

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

175°C TJ

Tube

2013

-

Obsolete

1 (Unlimited)

EAR99

-

-

-

-

NOT SPECIFIED

NOT SPECIFIED

-

-

-

-

-

-

-

-

-

-

Single

-

-

-

460m Ω @ 3A

-

-

-

-

1200V

-

-

-

-

-

-

3A

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

GA50JT12-247
GA50JT12-247

GeneSiC Semiconductor

In Stock

-

-

18 Weeks

-

Through Hole

TO-247-3

NO

3

-

-

-

-

-

-

100A Tc

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

583W Tc

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

175°C TJ

Tube

2016

-

Obsolete

1 (Unlimited)

EAR99

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

25m Ω @ 50A

-

7209pF @ 800V

-

-

1200V

-

N-CHANNEL

-

-

-

-

50A

-

-

-

-

-

-

-

-

-

-

-

-

No SVHC

RoHS Compliant

GA08JT17-247
GA08JT17-247

GeneSiC Semiconductor

In Stock

-

Datasheet

18 Weeks

Through Hole

Through Hole

TO-247-3

-

3

-

-

-

-

-

-

8A Tc 90°C

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

48W Tc

-

-

-

-

-

-

-

-

73 ns

-

-

-

-

-

-

-

175°C TJ

Tube

2013

-

Active

1 (Unlimited)

EAR99

-

-

-

-

NOT SPECIFIED

NOT SPECIFIED

-

-

-

-

-

-

-

-

-

-

Single

91W

-

-

250m Ω @ 8A

-

-

-

28ns

1700V

-

-

50 ns

-

-

-

8A

-

-

-

-

-

-

-

-

-

-

-

-

No SVHC

RoHS Compliant

2N7638-GA
2N7638-GA

GeneSiC Semiconductor

In Stock

-

Datasheet

18 Weeks

Surface Mount

Surface Mount

TO-276AA

-

3

-

-

-

-

-

-

8A Tc 158°C

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

200W Tc

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-55°C~225°C TJ

Bulk

2013

-

Obsolete

1 (Unlimited)

EAR99

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

170m Ω @ 8A

-

720pF @ 35V

-

-

650V

-

N-CHANNEL

-

-

-

-

8A

-

-

-

-

-

-

-

-

-

-

-

-

No SVHC

Non-RoHS Compliant

G3R12MT12K
G3R12MT12K

GeneSiC Semiconductor

170

-

-

-

-

Through Hole

TO-247-4

-

-

TO-247-4

-

G3R12M

GeneSiC Semiconductor

Enhancement

-

157A (Tc)

15V, 18V

30

-

-

111 A

GeneSiC Semiconductor

+ 175 C

GeneSiC Semiconductor

- 55 C

SMD/SMT

-

-

-

Tube

567 W

567W (Tc)

-

Active

-

288 nC

12 mOhms

Details

-

N-Channel

-

-

-

-

-

1.2 kV

- 10 V, + 22 V

2.7 V

-55°C ~ 175°C (TJ)

-

-

-

-

-

-

-

MOSFETs

-

-

-

-

-

-

-

-

-

-

-

1 Channel

-

-

-

-

-

N-Channel

13mOhm @ 100A, 18V

2.7V @ 50mA

9335 pF @ 800 V

288 nC @ 15 V

-

1200 V

+22V, -10V

-

-

-

MOSFET

-

-

-

-

-

-

-

-

-

MOSFET

MOSFET

-

-

-

-

-

G2R50MT33K
G2R50MT33K

GeneSiC Semiconductor

40

-

-

-

-

Through Hole

TO-247-4

-

-

TO-247-4

-

-

-

-

-

63A (Tc)

20V

-

-

-

-

-

-

GeneSiC Semiconductor

-

-

-

-

-

Tube

-

536W (Tc)

-

Active

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-55°C ~ 175°C (TJ)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

N-Channel

50mOhm @ 40A, 20V

3.5V @ 10mA (Typ)

7301 pF @ 1000 V

340 nC @ 20 V

-

3300 V

+25V, -10V

-

-

-

-

-

-

-

-

-

-

-

-

Standard

-

-

-

-

-

-

-

G3R60MT07D
G3R60MT07D

GeneSiC Semiconductor

1759
-

-

-

Through Hole

TO-247-3

-

-

TO-247-3

-

-

-

Enhancement

-

-

-

-

-

-

43 A

-

+ 175 C

GeneSiC Semiconductor

- 55 C

Through Hole

-

-

-

Tube

171 W

-

-

Active

-

47 nC

60 mOhms

-

-

N-Channel

-

-

-

-

-

750 V

- 5 V, + 15 V

2.5 V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

1 Channel

-

-

-

-

-

-

-

-

-

-

-

750 V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

G3R350MT12J
G3R350MT12J

GeneSiC Semiconductor

32

-

-

-

-

Surface Mount

TO-263-7

-

-

TO-263-7

-

G3R350

GeneSiC Semiconductor

Enhancement

11A

11A (Tc)

15V

50

1.8 S

-

10 A

GeneSiC Semiconductor

+ 175 C

GeneSiC Semiconductor

- 55 C

SMD/SMT

-

-

-

Tube

64 W

75W (Tc)

-

Active

-

10 nC

350 mOhms

Details

-

N-Channel

-

6 ns

6 ns

0.056438 oz

-

1.2 kV

- 5 V, + 15 V

2.7 V

-55°C ~ 175°C (TJ)

Tube

-

G3R

-

-

-

SiC MOSFET

MOSFETs

SiC

-

-

-

-

-

-

-

-

-

Single

1 Channel

-

-

-

75W

-

N-Channel

420mOhm @ 4A, 15V

2.69V @ 2mA

334 pF @ 800 V

12 nC @ 15 V

5 ns

1200 V

±15V

-

-

-

MOSFET

MOSFET

-

-

-

-

-

N Channel

-

-

MOSFET

MOSFET

-

-

-

-

-

G3R40MT12D
G3R40MT12D

GeneSiC Semiconductor

506
-

-

-

Surface Mount

48-TFSOP (0.240, 6.10mm Width)

-

-

48-TSSOP

-

G3R40

-

Enhancement

71A

71A (Tc)

15V

-

-

220MHz

63 A

-

+ 175 C

GeneSiC Semiconductor

- 55 C

Through Hole

-

-

-

Tube

297 W

333W (Tc)

-

Active

-

88 nC

40 mOhms

-

-

N-Channel

-

-

-

-

-

1.2 kV

- 5 V, + 15 V

2.7 V

0°C ~ 70°C

Tape & Reel (TR)

-

--

Active

-

-

-

-

SiCFET (Silicon Carbide)

3.135 V ~ 3.465 V

-

-

-

ICS9DB108

Clock

-

-

-

-

1 Channel

1

-

-

333W

-

N-Channel

48mOhm @ 35A, 15V

2.69V @ 10mA

2929 pF @ 800 V

106 nC @ 15 V

-

1200 V

±15V

-

-

Clock

-

-

-

1:8

Yes

Yes/Yes

-

N Channel

PCI Express (PCIe)

-

-

-

-

-

-

-

-

G3R20MT17N
G3R20MT17N

GeneSiC Semiconductor

2218
  • 1:$121.953561
  • 10:$115.050529
  • 100:$108.538235
  • 500:$102.394561
    • View all price
-

-

-

Chassis Mount

QFN

-

-

SOT-227

-

G3R20

GeneSiC Semiconductor

Enhancement

100A

100A (Tc)

15V

10

38.6 S

-

92 A

GeneSiC Semiconductor

+ 175 C

GeneSiC Semiconductor

- 55 C

SMD/SMT

2.75(V)

2.25(V)

-40C to 85C

Tube

476 W

523W (Tc)

-

Active

No

256 nC

20 mOhms

Details

66

N-Channel

-

134 ns

117 ns

1 oz

-

1.7 kV

- 5 V, + 15 V

2.7 V

-55°C ~ 175°C (TJ)

Bulk

-

G3R

-

-

-

CLOCK OSCILLATOR

MOSFETs

SiC

-

-

-

±25(ppm)

-

-

-

55(%)

-

Single

1 Channel

-

15(pF)

-

523W

-

N-Channel

26mOhm @ 75A, 15V

2.7V @ 15mA

10187 pF @ 1000 V

400 nC @ 15 V

129 ns

1700 V

±15V

-

-

-

MOSFET

MOSFET

-

-

-

-

-

N Channel

-

-

MOSFET

MOSFET

-

-

-

-

-

G3R450MT17D
G3R450MT17D

GeneSiC Semiconductor

20000
-

-

-

Through Hole

QFN

-

-

TO-247-3

-

G3R450

GeneSiC Semiconductor

Enhancement

9A

9A (Tc)

15V

30

1.8 S

-

7 A

GeneSiC Semiconductor

+ 175 C

GeneSiC Semiconductor

- 55 C

Through Hole

3.63(V)

2.97(V)

-20C to 70C

Tube

70 W

88W (Tc)

-

Active

No

13 nC

450 mOhms

Details

148.5

N-Channel

-

15 ns

15 ns

0.211644 oz

-

1.7 kV

- 5 V, + 15 V

2.7 V

-55°C ~ 175°C (TJ)

Bulk

-

G3R

-

-

-

CLOCK OSCILLATOR

MOSFETs

SiC

-

-

-

±25(ppm)

-

-

-

55(%)

-

Single

1 Channel

-

-

-

88W

-

N-Channel

585mOhm @ 4A, 15V

2.7V @ 2mA

454 pF @ 1000 V

18 nC @ 15 V

17 ns

1700 V

±15V

-

-

-

MOSFET

MOSFET

-

-

-

-

-

N Channel

-

-

MOSFET

MOSFET

-

-

-

-

-

G3R30MT12K
G3R30MT12K

GeneSiC Semiconductor

337
-

-

-

Through Hole

QFN

-

-

TO-247-4

-

G3R30

-

Enhancement

90A

90A (Tc)

15V

-

-

-

70 A

-

+ 175 C

GeneSiC Semiconductor

- 55 C

Through Hole

3.63(V)

2.25(V)

-20C to 70C

Tube

281 W

400W (Tc)

-

Active

No

118 nC

30 mOhms

-

33.333

N-Channel

-

-

-

-

-

1.2 kV

- 5 V, + 15 V

2.7 V

-55°C ~ 175°C (TJ)

Bulk

-

G3R™

-

-

-

CLOCK OSCILLATOR

-

SiCFET (Silicon Carbide)

-

-

-

±25(ppm)

-

-

-

55(%)

-

-

1 Channel

-

15(pF)

-

400W

-

N-Channel

36mOhm @ 50A, 15V

2.69V @ 12mA

3901 pF @ 800 V

155 nC @ 15 V

-

1200 V

±15V

-

-

-

-

-

-

-

-

-

-

N Channel

-

-

-

-

-

-

-

-

-

G3R160MT12J
G3R160MT12J

GeneSiC Semiconductor

1702

-

-

-

-

Surface Mount

QFN

-

-

TO-263-7

-

G3R160

GeneSiC Semiconductor

Enhancement

22A

19A (Tc)

15V

50

4.4 S

-

19 A

GeneSiC Semiconductor

+ 175 C

GeneSiC Semiconductor

- 55 C

SMD/SMT

2.75(V)

2.25(V)

-20C to 70C

Tube

110 W

128W (Tc)

-

Active

No

23 nC

160 mOhms

Details

50

N-Channel

-

10 ns

11 ns

0.056438 oz

-

1.2 kV

- 5 V, + 15 V

2.7 V

-55°C ~ 175°C (TJ)

Bulk

-

G3R

-

-

-

CLOCK OSCILLATOR

MOSFETs

SiC

-

-

-

±10(ppm)

-

-

-

55(%)

-

Single

1 Channel

-

-

-

128W

-

N-Channel

208mOhm @ 10A, 15V

2.7V @ 5mA (Typ)

724 pF @ 800 V

23 nC @ 15 V

9 ns

1200 V

+20V, -10V

-

-

-

MOSFET

MOSFET

-

-

-

-

-

N Channel

-

-

MOSFET

MOSFET

-

-

-

-

-

G3R45MT17K
G3R45MT17K

GeneSiC Semiconductor

6893
-

-

-

Through Hole

QFN

-

-

TO-247-4

-

G3R45

GeneSiC Semiconductor

Enhancement

61A

61A (Tc)

15V

30

17.1 S

-

48 A

GeneSiC Semiconductor

+ 175 C

GeneSiC Semiconductor

- 55 C

Through Hole

2.75(V)

2.25(V)

-40C to 85C

Tube

284 W

438W (Tc)

-

Active

No

106 nC

45 mOhms

Details

150

N-Channel

-

31 ns

44 ns

0.211644 oz

-

1.7 kV

- 5 V, + 15 V

2.7 V

-55°C ~ 175°C (TJ)

Bulk

-

G3R

-

-

-

CLOCK OSCILLATOR

MOSFETs

SiC

-

-

-

±25(ppm)

-

-

-

55(%)

-

Single

1 Channel

-

-

-

438W

-

N-Channel

58mOhm @ 40A, 15V

2.7V @ 8mA

4523 pF @ 1000 V

182 nC @ 15 V

32 ns

1700 V

±15V

-

-

-

MOSFET

MOSFET

-

-

-

-

-

N Channel

-

-

MOSFET

MOSFET

-

-

-

-

-

G3R75MT12J
G3R75MT12J

GeneSiC Semiconductor

50
-

-

-

Surface Mount

QFN

-

-

TO-263-7

-

G3R75

GeneSiC Semiconductor

Enhancement

42A

42A (Tc)

15V

50

9 S

-

38 A

GeneSiC Semiconductor

+ 175 C

GeneSiC Semiconductor

- 55 C

SMD/SMT

3.63(V)

2.25(V)

-20C to 70C

Tube

196 W

224W (Tc)

-

Active

No

47 nC

75 mOhms

Details

125

N-Channel

-

15 ns

15 ns

0.056438 oz

-

1.2 kV

- 5 V, + 15 V

2.7 V

-55°C ~ 175°C (TJ)

Bulk

-

G3R

-

-

-

CLOCK OSCILLATOR

MOSFETs

SiC

-

-

-

±25(ppm)

-

-

-

55(%)

-

Single

1 Channel

-

-

-

224W

-

N-Channel

90mOhm @ 20A, 15V

2.69V @ 7.5mA

1560 pF @ 800 V

54 nC @ 15 V

12 ns

1200 V

±15V

-

-

-

MOSFET

MOSFET

-

-

-

-

-

N Channel

-

-

MOSFET

MOSFET

-

-

-

-

-

G3R20MT12N
G3R20MT12N

GeneSiC Semiconductor

270
-

-

-

Chassis Mount

QFN

-

-

SOT-227

-

G3R20

-

Enhancement

105A

105A (Tc)

15V

-

-

-

93 A

-

+ 175 C

GeneSiC Semiconductor

- 55 C

SMD/SMT

2.75(V)

2.25(V)

-40C to 85C

Tube

338 W

365W (Tc)

-

Active

No

180 nC

20 mOhms

-

50

N-Channel

-

-

-

-

-

1.2 kV

- 5 V, + 15 V

2.7 V

-55°C ~ 175°C (TJ)

Bulk

-

G3R™

-

-

-

CLOCK OSCILLATOR

-

SiCFET (Silicon Carbide)

-

-

-

±50(ppm)

-

-

-

55(%)

-

-

1 Channel

-

-

-

365W

-

N-Channel

24mOhm @ 60A, 15V

2.69V @ 15mA

5873 pF @ 800 V

219 nC @ 15 V

-

1200 V

+20V, -10V

-

-

-

-

-

-

-

-

-

-

N Channel

-

-

-

-

-

-

-

-

-

G2R1000MT17J
G2R1000MT17J

GeneSiC Semiconductor

3462
-

-

-

Surface Mount

QFN

-

-

TO-263-7

-

G2R1000

GeneSiC Semiconductor

Enhancement

4A

3A (Tc)

20V

50

0.76 S

-

5 A

GeneSiC Semiconductor

+ 175 C

GeneSiC Semiconductor

- 55 C

Surface Mount

3.63(V)

2.97(V)

-40C to 85C

Tube

44 W

54W (Tc)

5(mm)

Active

No

11 nC

1 Ohms

Details

125

N-Channel

-

13 ns

9 ns

0.056438 oz

Industrial grade

1.7 kV

- 5 V, + 20 V

4.5 V

-55°C ~ 175°C (TJ)

Bulk

-

G2R

-

-

-

CLOCK OSCILLATOR

MOSFETs

SiC

-

-

-

±25(ppm)

-

-

6

55(%)

-

Single

1 Channel

-

-

-

54W

-

N-Channel

1.2Ohm @ 2A, 20V

4V @ 2mA

139 pF @ 1000 V

-

19 ns

1700 V

+20V, -10V

-

-

-

MOSFET

MOSFET

-

-

-

-

Industrial

N Channel

-

-

MOSFET

MOSFET

7(mm)

-

0.9(mm)

-

-

G3R160MT12D
G3R160MT12D

GeneSiC Semiconductor

3231

-

-

-

-

Through Hole

QFN

-

-

TO-247-3

-

G3R160

GeneSiC Semiconductor

Enhancement

22A

22A (Tc)

15V

30

4.4 S

-

19 A

GeneSiC Semiconductor

+ 175 C

GeneSiC Semiconductor

- 55 C

Through Hole

3.63(V)

2.25(V)

-20C to 70C

Tube

106 W

123W (Tc)

-

Active

No

23 nC

160 mOhms

Details

25

N-Channel

-

16 ns

16 ns

0.211644 oz

-

1.2 kV

- 5 V, + 15 V

2.7 V

-55°C ~ 175°C (TJ)

Bulk

-

G3R

-

-

-

CLOCK OSCILLATOR

MOSFETs

SiC

-

-

-

±25(ppm)

-

-

-

55(%)

-

Single

1 Channel

-

-

-

123W

-

N-Channel

192mOhm @ 10A, 15V

2.69V @ 5mA

730 pF @ 800 V

28 nC @ 15 V

9 ns

1200 V

±15V

-

-

-

MOSFET

MOSFET

-

-

-

-

-

N Channel

-

-

MOSFET

MOSFET

-

-

-

-

-

G3R40MT12J
G3R40MT12J

GeneSiC Semiconductor

877
-

-

-

Surface Mount

TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

-

-

TO-263-7

-

G3R40

-

Enhancement

75A

75A (Tc)

15V

-

-

-

66 A

-

+ 175 C

GeneSiC Semiconductor

- 55 C

SMD/SMT

-

-

-

Tube

330 W

374W (Tc)

-

Active

-

88 nC

40 mOhms

-

-

N-Channel

-

-

-

-

-

1.2 kV

- 5 V, + 15 V

2.7 V

-55°C ~ 175°C (TJ)

-

-

G3R™

-

-

-

-

-

SiCFET (Silicon Carbide)

-

-

-

-

-

-

-

-

-

-

1 Channel

-

-

-

374W

-

N-Channel

48mOhm @ 35A, 15V

2.69V @ 10mA

2929 pF @ 800 V

106 nC @ 15 V

-

1200 V

±15V

-

-

-

-

-

-

-

-

-

-

N Channel

-

-

-

-

-

-

-

-

-

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