- Package / Case
- Packaging
- Current - Continuous Drain (Id) @ 25℃
- Drain to Source Voltage (Vdss)
- Mounting Type
- Operating Temperature
- Power Dissipation (Max)
- Rds On (Max) @ Id, Vgs
- Channel Mode
- Mounting Styles
- Rds On - Drain-Source Resistance
- Series
Attribute column
Manufacturer
GeneSiC Semiconductor Transistors - FETs, MOSFETs - Single
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Factory Lead Time | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Weight | Base Product Number | Brand | Channel Mode | Continuous Drain Current Id | Current - Continuous Drain (Id) @ 25℃ | Drive Voltage (Max Rds On, Min Rds On) | Factory Pack QuantityFactory Pack Quantity | Forward Transconductance - Min | Id - Continuous Drain Current | Manufacturer | Maximum Operating Temperature | Mfr | Minimum Operating Temperature | Mounting Styles | Operating Supply Voltage (Max) | Operating Supply Voltage (Min) | Operating Temp Range | Package | Pd - Power Dissipation | Power Dissipation (Max) | Product Depth (mm) | Product Status | Programmable | Qg - Gate Charge | Rds On - Drain-Source Resistance | RoHS | Standard Frequency | Transistor Polarity | Turn Off Delay Time | Typical Turn-Off Delay Time | Typical Turn-On Delay Time | Unit Weight | Usage Level | Vds - Drain-Source Breakdown Voltage | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Operating Temperature | Packaging | Published | Series | Part Status | Moisture Sensitivity Level (MSL) | ECCN Code | Type | Subcategory | Technology | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Frequency Stability | Pin Count | Symmetry-Max | Polarity | Configuration | Number of Channels | Load Capacitance | Element Configuration | Power Dissipation | Turn On Delay Time | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Drain to Source Voltage (Vdss) | Vgs (Max) | Polarity/Channel Type | Fall Time (Typ) | Product Type | Transistor Type | Continuous Drain Current (ID) | Screening Level | Channel Type | FET Feature | Product | Product Category | Product Length (mm) | Height | Product Height (mm) | REACH SVHC | RoHS Status |
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 GA04JT17-247 GeneSiC Semiconductor | In Stock | - | Datasheet | 18 Weeks | Through Hole | Through Hole | TO-247-3 | - | 3 | - | - | - | - | - | - | 4A Tc 95°C | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 106W Tc | - | - | - | - | - | - | - | - | 19 ns | - | - | - | - | - | - | - | 175°C TJ | Tube | 2013 | - | Obsolete | 1 (Unlimited) | EAR99 | - | - | - | NOT SPECIFIED | NOT SPECIFIED | - | - | - | NPN | - | 1 | - | Single | 106W | 10 ns | - | 480m Ω @ 4A | - | - | - | 28ns | 1700V | - | - | 50 ns | - | - | 15A | - | - | - | - | - | - | 25.934mm | - | No SVHC | RoHS Compliant | ||
GA03JT12-247 GeneSiC Semiconductor | In Stock | - | Datasheet | 18 Weeks | Through Hole | Through Hole | TO-247-3 | - | 3 | - | 6.390011g | - | - | - | - | 3A Tc 95°C | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 15W Tc | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 175°C TJ | Tube | 2013 | - | Obsolete | 1 (Unlimited) | EAR99 | - | - | - | NOT SPECIFIED | NOT SPECIFIED | - | - | - | - | - | - | - | Single | - | - | - | 460m Ω @ 3A | - | - | - | - | 1200V | - | - | - | - | - | 3A | - | - | - | - | - | - | - | - | - | RoHS Compliant | ||
GA50JT12-247 GeneSiC Semiconductor | In Stock | - | - | 18 Weeks | - | Through Hole | TO-247-3 | NO | 3 | - | - | - | - | - | - | 100A Tc | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 583W Tc | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 175°C TJ | Tube | 2016 | - | Obsolete | 1 (Unlimited) | EAR99 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 25m Ω @ 50A | - | 7209pF @ 800V | - | - | 1200V | - | N-CHANNEL | - | - | - | 50A | - | - | - | - | - | - | - | - | No SVHC | RoHS Compliant | ||
GA08JT17-247 GeneSiC Semiconductor | In Stock | - | Datasheet | 18 Weeks | Through Hole | Through Hole | TO-247-3 | - | 3 | - | - | - | - | - | - | 8A Tc 90°C | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 48W Tc | - | - | - | - | - | - | - | - | 73 ns | - | - | - | - | - | - | - | 175°C TJ | Tube | 2013 | - | Active | 1 (Unlimited) | EAR99 | - | - | - | NOT SPECIFIED | NOT SPECIFIED | - | - | - | - | - | - | - | Single | 91W | - | - | 250m Ω @ 8A | - | - | - | 28ns | 1700V | - | - | 50 ns | - | - | 8A | - | - | - | - | - | - | - | - | No SVHC | RoHS Compliant | ||
 2N7638-GA GeneSiC Semiconductor | In Stock | - | Datasheet | 18 Weeks | Surface Mount | Surface Mount | TO-276AA | - | 3 | - | - | - | - | - | - | 8A Tc 158°C | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 200W Tc | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | -55°C~225°C TJ | Bulk | 2013 | - | Obsolete | 1 (Unlimited) | EAR99 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 170m Ω @ 8A | - | 720pF @ 35V | - | - | 650V | - | N-CHANNEL | - | - | - | 8A | - | - | - | - | - | - | - | - | No SVHC | Non-RoHS Compliant | ||
 G2R50MT33K GeneSiC Semiconductor | 59 | - | - | - | - | Through Hole | TO-247-4 | - | - | TO-247-4 | - | - | - | - | - | 63A (Tc) | 20V | - | - | - | - | - | GeneSiC Semiconductor | - | - | - | - | - | Tube | - | 536W (Tc) | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | -55°C ~ 175°C (TJ) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | N-Channel | 50mOhm @ 40A, 20V | 3.5V @ 10mA (Typ) | 7301 pF @ 1000 V | 340 nC @ 20 V | - | 3300 V | +25V, -10V | - | - | - | - | - | - | - | Standard | - | - | - | - | - | - | - | ||
G3R450MT17D GeneSiC Semiconductor | 20000 |
| - | - | - | Through Hole | QFN | - | - | TO-247-3 | - | G3R450 | GeneSiC Semiconductor | Enhancement | 9A | 9A (Tc) | 15V | 30 | 1.8 S | 7 A | GeneSiC Semiconductor | + 175 C | GeneSiC Semiconductor | - 55 C | Through Hole | 3.63(V) | 2.97(V) | -20C to 70C | Tube | 70 W | 88W (Tc) | - | Active | No | 13 nC | 450 mOhms | Details | 148.5 | N-Channel | - | 15 ns | 15 ns | 0.211644 oz | - | 1.7 kV | - 5 V, + 15 V | 2.7 V | -55°C ~ 175°C (TJ) | Bulk | - | G3R | - | - | - | CLOCK OSCILLATOR | MOSFETs | SiC | - | - | ±25(ppm) | - | 55(%) | - | Single | 1 Channel | - | - | 88W | - | N-Channel | 585mOhm @ 4A, 15V | 2.7V @ 2mA | 454 pF @ 1000 V | 18 nC @ 15 V | 17 ns | 1700 V | ±15V | - | - | MOSFET | MOSFET | - | - | N Channel | - | MOSFET | MOSFET | - | - | - | - | - | ||
G3R30MT12K GeneSiC Semiconductor | 307 | - | - | - | - | Through Hole | QFN | - | - | TO-247-4 | - | G3R30 | - | Enhancement | 90A | 90A (Tc) | 15V | - | - | 70 A | - | + 175 C | GeneSiC Semiconductor | - 55 C | Through Hole | 3.63(V) | 2.25(V) | -20C to 70C | Tube | 281 W | 400W (Tc) | - | Active | No | 118 nC | 30 mOhms | - | 33.333 | N-Channel | - | - | - | - | - | 1.2 kV | - 5 V, + 15 V | 2.7 V | -55°C ~ 175°C (TJ) | Bulk | - | G3R™ | - | - | - | CLOCK OSCILLATOR | - | SiCFET (Silicon Carbide) | - | - | ±25(ppm) | - | 55(%) | - | - | 1 Channel | 15(pF) | - | 400W | - | N-Channel | 36mOhm @ 50A, 15V | 2.69V @ 12mA | 3901 pF @ 800 V | 155 nC @ 15 V | - | 1200 V | ±15V | - | - | - | - | - | - | N Channel | - | - | - | - | - | - | - | - | ||
G3R45MT17K GeneSiC Semiconductor | 6893 | - | - | - | - | Through Hole | QFN | - | - | TO-247-4 | - | G3R45 | GeneSiC Semiconductor | Enhancement | 61A | 61A (Tc) | 15V | 30 | 17.1 S | 48 A | GeneSiC Semiconductor | + 175 C | GeneSiC Semiconductor | - 55 C | Through Hole | 2.75(V) | 2.25(V) | -40C to 85C | Tube | 284 W | 438W (Tc) | - | Active | No | 106 nC | 45 mOhms | Details | 150 | N-Channel | - | 31 ns | 44 ns | 0.211644 oz | - | 1.7 kV | - 5 V, + 15 V | 2.7 V | -55°C ~ 175°C (TJ) | Bulk | - | G3R | - | - | - | CLOCK OSCILLATOR | MOSFETs | SiC | - | - | ±25(ppm) | - | 55(%) | - | Single | 1 Channel | - | - | 438W | - | N-Channel | 58mOhm @ 40A, 15V | 2.7V @ 8mA | 4523 pF @ 1000 V | 182 nC @ 15 V | 32 ns | 1700 V | ±15V | - | - | MOSFET | MOSFET | - | - | N Channel | - | MOSFET | MOSFET | - | - | - | - | - | ||
G3R60MT07D GeneSiC Semiconductor | 120 | - | - | - | - | Through Hole | TO-247-3 | - | - | TO-247-3 | - | - | - | Enhancement | - | - | - | - | - | 43 A | - | + 175 C | GeneSiC Semiconductor | - 55 C | Through Hole | - | - | - | Tube | 171 W | - | - | Active | - | 47 nC | 60 mOhms | - | - | N-Channel | - | - | - | - | - | 750 V | - 5 V, + 15 V | 2.5 V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1 Channel | - | - | - | - | - | - | - | - | - | - | 750 V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
G3R20MT12N GeneSiC Semiconductor | 38 | - | - | - | - | Chassis Mount | QFN | - | - | SOT-227 | - | G3R20 | - | Enhancement | 105A | 105A (Tc) | 15V | - | - | 93 A | - | + 175 C | GeneSiC Semiconductor | - 55 C | SMD/SMT | 2.75(V) | 2.25(V) | -40C to 85C | Tube | 338 W | 365W (Tc) | - | Active | No | 180 nC | 20 mOhms | - | 50 | N-Channel | - | - | - | - | - | 1.2 kV | - 5 V, + 15 V | 2.7 V | -55°C ~ 175°C (TJ) | Bulk | - | G3R™ | - | - | - | CLOCK OSCILLATOR | - | SiCFET (Silicon Carbide) | - | - | ±50(ppm) | - | 55(%) | - | - | 1 Channel | - | - | 365W | - | N-Channel | 24mOhm @ 60A, 15V | 2.69V @ 15mA | 5873 pF @ 800 V | 219 nC @ 15 V | - | 1200 V | +20V, -10V | - | - | - | - | - | - | N Channel | - | - | - | - | - | - | - | - | ||
G2R1000MT17J GeneSiC Semiconductor | 113 | - | - | - | - | Surface Mount | QFN | - | - | TO-263-7 | - | G2R1000 | GeneSiC Semiconductor | Enhancement | 4A | 3A (Tc) | 20V | 50 | 0.76 S | 5 A | GeneSiC Semiconductor | + 175 C | GeneSiC Semiconductor | - 55 C | Surface Mount | 3.63(V) | 2.97(V) | -40C to 85C | Tube | 44 W | 54W (Tc) | 5(mm) | Active | No | 11 nC | 1 Ohms | Details | 125 | N-Channel | - | 13 ns | 9 ns | 0.056438 oz | Industrial grade | 1.7 kV | - 5 V, + 20 V | 4.5 V | -55°C ~ 175°C (TJ) | Bulk | - | G2R | - | - | - | CLOCK OSCILLATOR | MOSFETs | SiC | - | - | ±25(ppm) | 6 | 55(%) | - | Single | 1 Channel | - | - | 54W | - | N-Channel | 1.2Ohm @ 2A, 20V | 4V @ 2mA | 139 pF @ 1000 V | - | 19 ns | 1700 V | +20V, -10V | - | - | MOSFET | MOSFET | - | Industrial | N Channel | - | MOSFET | MOSFET | 7(mm) | - | 0.9(mm) | - | - | ||
G3R160MT12D GeneSiC Semiconductor | 1329 | - | - | - | - | Through Hole | QFN | - | - | TO-247-3 | - | G3R160 | GeneSiC Semiconductor | Enhancement | 22A | 22A (Tc) | 15V | 30 | 4.4 S | 19 A | GeneSiC Semiconductor | + 175 C | GeneSiC Semiconductor | - 55 C | Through Hole | 3.63(V) | 2.25(V) | -20C to 70C | Tube | 106 W | 123W (Tc) | - | Active | No | 23 nC | 160 mOhms | Details | 25 | N-Channel | - | 16 ns | 16 ns | 0.211644 oz | - | 1.2 kV | - 5 V, + 15 V | 2.7 V | -55°C ~ 175°C (TJ) | Bulk | - | G3R | - | - | - | CLOCK OSCILLATOR | MOSFETs | SiC | - | - | ±25(ppm) | - | 55(%) | - | Single | 1 Channel | - | - | 123W | - | N-Channel | 192mOhm @ 10A, 15V | 2.69V @ 5mA | 730 pF @ 800 V | 28 nC @ 15 V | 9 ns | 1200 V | ±15V | - | - | MOSFET | MOSFET | - | - | N Channel | - | MOSFET | MOSFET | - | - | - | - | - | ||
G2R120MT33J GeneSiC Semiconductor | 66 | - | - | - | - | Surface Mount | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA | - | - | TO-263-7 | - | G2R120 | GeneSiC Semiconductor | Enhancement | 35A | 35A | 20V | 50 | 5.8 S | 34 A | GeneSiC Semiconductor | + 175 C | GeneSiC Semiconductor | - 55 C | SMD/SMT | - | - | - | Tube | 366 W | - | - | Active | - | 130 nC | 120 mOhms | Details | - | N-Channel | - | 35 ns | 96 ns | 0.056438 oz | - | 3.3 kV | - 5 V, + 20 V | 4.5 V | -55°C ~ 175°C (TJ) | Tube | - | - | - | - | - | SiC MOSFET | MOSFETs | - | - | - | - | - | - | - | Single | 1 Channel | - | - | 402W | - | N-Channel | 156mOhm @ 20A, 20V | - | 3706 pF @ 1000 V | 145 nC @ 20 V | 26 ns | 3300 V | +25V, -10V | - | - | MOSFET | MOSFET | - | - | N Channel | - | MOSFET | MOSFET | - | - | - | - | - | ||
G3R350MT12J GeneSiC Semiconductor | 41 | - | - | - | - | Surface Mount | TO-263-7 | - | - | TO-263-7 | - | G3R350 | GeneSiC Semiconductor | Enhancement | 11A | 11A (Tc) | 15V | 50 | 1.8 S | 10 A | GeneSiC Semiconductor | + 175 C | GeneSiC Semiconductor | - 55 C | SMD/SMT | - | - | - | Tube | 64 W | 75W (Tc) | - | Active | - | 10 nC | 350 mOhms | Details | - | N-Channel | - | 6 ns | 6 ns | 0.056438 oz | - | 1.2 kV | - 5 V, + 15 V | 2.7 V | -55°C ~ 175°C (TJ) | Tube | - | G3R | - | - | - | SiC MOSFET | MOSFETs | SiC | - | - | - | - | - | - | Single | 1 Channel | - | - | 75W | - | N-Channel | 420mOhm @ 4A, 15V | 2.69V @ 2mA | 334 pF @ 800 V | 12 nC @ 15 V | 5 ns | 1200 V | ±15V | - | - | MOSFET | MOSFET | - | - | N Channel | - | MOSFET | MOSFET | - | - | - | - | - | ||
G3R40MT12J GeneSiC Semiconductor | 13 | - | - | - | - | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | - | - | TO-263-7 | - | G3R40 | - | Enhancement | 75A | 75A (Tc) | 15V | - | - | 66 A | - | + 175 C | GeneSiC Semiconductor | - 55 C | SMD/SMT | - | - | - | Tube | 330 W | 374W (Tc) | - | Active | - | 88 nC | 40 mOhms | - | - | N-Channel | - | - | - | - | - | 1.2 kV | - 5 V, + 15 V | 2.7 V | -55°C ~ 175°C (TJ) | - | - | G3R™ | - | - | - | - | - | SiCFET (Silicon Carbide) | - | - | - | - | - | - | - | 1 Channel | - | - | 374W | - | N-Channel | 48mOhm @ 35A, 15V | 2.69V @ 10mA | 2929 pF @ 800 V | 106 nC @ 15 V | - | 1200 V | ±15V | - | - | - | - | - | - | N Channel | - | - | - | - | - | - | - | - | ||
G3R20MT17N GeneSiC Semiconductor | 48 | - | - | - | - | Chassis Mount | QFN | - | - | SOT-227 | - | G3R20 | GeneSiC Semiconductor | Enhancement | 100A | 100A (Tc) | 15V | 10 | 38.6 S | 92 A | GeneSiC Semiconductor | + 175 C | GeneSiC Semiconductor | - 55 C | SMD/SMT | 2.75(V) | 2.25(V) | -40C to 85C | Tube | 476 W | 523W (Tc) | - | Active | No | 256 nC | 20 mOhms | Details | 66 | N-Channel | - | 134 ns | 117 ns | 1 oz | - | 1.7 kV | - 5 V, + 15 V | 2.7 V | -55°C ~ 175°C (TJ) | Bulk | - | G3R | - | - | - | CLOCK OSCILLATOR | MOSFETs | SiC | - | - | ±25(ppm) | - | 55(%) | - | Single | 1 Channel | 15(pF) | - | 523W | - | N-Channel | 26mOhm @ 75A, 15V | 2.7V @ 15mA | 10187 pF @ 1000 V | 400 nC @ 15 V | 129 ns | 1700 V | ±15V | - | - | MOSFET | MOSFET | - | - | N Channel | - | MOSFET | MOSFET | - | - | - | - | - | ||
G3R160MT12J GeneSiC Semiconductor | 1536 | - | - | - | - | Surface Mount | QFN | - | - | TO-263-7 | - | G3R160 | GeneSiC Semiconductor | Enhancement | 22A | 19A (Tc) | 15V | 50 | 4.4 S | 19 A | GeneSiC Semiconductor | + 175 C | GeneSiC Semiconductor | - 55 C | SMD/SMT | 2.75(V) | 2.25(V) | -20C to 70C | Tube | 110 W | 128W (Tc) | - | Active | No | 23 nC | 160 mOhms | Details | 50 | N-Channel | - | 10 ns | 11 ns | 0.056438 oz | - | 1.2 kV | - 5 V, + 15 V | 2.7 V | -55°C ~ 175°C (TJ) | Bulk | - | G3R | - | - | - | CLOCK OSCILLATOR | MOSFETs | SiC | - | - | ±10(ppm) | - | 55(%) | - | Single | 1 Channel | - | - | 128W | - | N-Channel | 208mOhm @ 10A, 15V | 2.7V @ 5mA (Typ) | 724 pF @ 800 V | 23 nC @ 15 V | 9 ns | 1200 V | +20V, -10V | - | - | MOSFET | MOSFET | - | - | N Channel | - | MOSFET | MOSFET | - | - | - | - | - | ||
G3R75MT12J GeneSiC Semiconductor | 49 |
| - | - | - | Surface Mount | QFN | - | - | TO-263-7 | - | G3R75 | GeneSiC Semiconductor | Enhancement | 42A | 42A (Tc) | 15V | 50 | 9 S | 38 A | GeneSiC Semiconductor | + 175 C | GeneSiC Semiconductor | - 55 C | SMD/SMT | 3.63(V) | 2.25(V) | -20C to 70C | Tube | 196 W | 224W (Tc) | - | Active | No | 47 nC | 75 mOhms | Details | 125 | N-Channel | - | 15 ns | 15 ns | 0.056438 oz | - | 1.2 kV | - 5 V, + 15 V | 2.7 V | -55°C ~ 175°C (TJ) | Bulk | - | G3R | - | - | - | CLOCK OSCILLATOR | MOSFETs | SiC | - | - | ±25(ppm) | - | 55(%) | - | Single | 1 Channel | - | - | 224W | - | N-Channel | 90mOhm @ 20A, 15V | 2.69V @ 7.5mA | 1560 pF @ 800 V | 54 nC @ 15 V | 12 ns | 1200 V | ±15V | - | - | MOSFET | MOSFET | - | - | N Channel | - | MOSFET | MOSFET | - | - | - | - | - | ||
G3R12MT12K GeneSiC Semiconductor | 185 | - | - | - | - | Through Hole | TO-247-4 | - | - | TO-247-4 | - | G3R12M | GeneSiC Semiconductor | Enhancement | - | 157A (Tc) | 15V, 18V | 30 | - | 111 A | GeneSiC Semiconductor | + 175 C | GeneSiC Semiconductor | - 55 C | SMD/SMT | - | - | - | Tube | 567 W | 567W (Tc) | - | Active | - | 288 nC | 12 mOhms | Details | - | N-Channel | - | - | - | - | - | 1.2 kV | - 10 V, + 22 V | 2.7 V | -55°C ~ 175°C (TJ) | - | - | - | - | - | - | - | MOSFETs | - | - | - | - | - | - | - | - | 1 Channel | - | - | - | - | N-Channel | 13mOhm @ 100A, 18V | 2.7V @ 50mA | 9335 pF @ 800 V | 288 nC @ 15 V | - | 1200 V | +22V, -10V | - | - | MOSFET | - | - | - | - | - | MOSFET | MOSFET | - | - | - | - | - |