- Factory Lead Time
- RoHS Status
- Published
- Package / Case
- Series
- Current - Average Rectified (Io) (per Diode)
- Current - Reverse Leakage @ Vr
- Diode Configuration
- Diode Type
- Mounting Type
- Operating Temperature - Junction
- Speed
Attribute column
Manufacturer
Global Power Diodes - Rectifiers - Arrays
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Mounting Type | Package / Case | Supplier Device Package | Colour outer sheath | Conductor category | Core identification | Current - Average Rectified (Io) (per Diode) | Lead Free Status / RoHS Status | Low smoke (according to EN 61034-2) | Material outer sheath | Mfr | Min. permitted bending radius, moving application/free movement | Min. permitted bending radius, stationary application/permanent installation | Nominal cross section conductor | Nominal voltage U | Nominal voltage U0 | Outer diameter approx. | Package | Permitted cable outer temperature after assembling without vibration | Permitted cable outer temperature during assembling/handling | Product Status | Rad Hardened | Screen over stranding | Screen over stranding element | Stranding element | Packaging | Series | Part Status | Speed | Diode Type | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction | Voltage - DC Reverse (Vr) (Max) | Diode Configuration | Reverse Recovery Time (trr) |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() G3S06504B Global Power | In Stock | - | - | Through Hole | TO-247-3 | TO-247AB | - | - | - | 9A (DC) | - | - | - | Global Power Technology-GPT | - | - | - | - | - | - | Cut Tape (CT);Tape & Box (TB); | - | - | Active | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 650 V | 1.7 V @ 4 A | -55°C ~ 175°C | 650 V | 1 Pair Common Cathode | 0 ns | ||
![]() G4S12020BM Global Power | 100000 | - | - | Through Hole | TO-247-3 | TO-247AB | - | - | - | 33.2A (DC) | -- | - | - | Global Power Technology-GPT | - | - | - | - | - | - | Cut Tape (CT);Tape & Box (TB); | - | - | Active | - | - | - | - | - | * | Active | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 30 µA @ 1200 V | 1.6 V @ 10 A | -55°C ~ 175°C | 1200 V | 1 Pair Common Cathode | 0 ns | ||
![]() G5S12040PP Global Power | In Stock | - | - | Through Hole | TO-247-2 | TO-247AC | - | - | - | 115A (DC) | - | - | - | Global Power Technology-GPT | - | - | - | - | - | - | Cut Tape (CT);Tape & Box (TB); | - | - | Active | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 100 µA @ 1200 V | 1.7 V @ 40 A | -55°C ~ 175°C | 1200 V | 1 Pair Common Anode | 0 ns | ||
![]() G3S12020B Global Power | In Stock | - | - | Through Hole | TO-247-2 | TO-247AC | - | - | - | 37A (DC) | - | - | - | Global Power Technology-GPT | - | - | - | - | - | - | Cut Tape (CT);Tape & Box (TB); | - | - | Active | No | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 1200 V | 1.7 V @ 10 A | -55°C ~ 175°C | 1200 V | 1 Pair Common Cathode | 0 ns | ||
![]() G3S12010B Global Power | In Stock | - | - | Through Hole | TO-247-3 | TO-247AB | - | - | - | 39A (DC) | - | - | - | Global Power Technology-GPT | - | - | - | - | - | - | Cut Tape (CT);Tape & Box (TB); | - | - | Active | No | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 1200 V | 1.7 V @ 5 A | -55°C ~ 175°C | 1200 V | 1 Pair Common Cathode | 0 ns | ||
![]() G3S12040B Global Power | In Stock | - | - | Through Hole | TO-247-3 | TO-247AB | - | - | - | 64.5A (DC) | - | - | - | Global Power Technology-GPT | - | - | - | - | - | - | Cut Tape (CT);Tape & Box (TB); | - | - | Active | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 1200 V | 1.7 V @ 15 A | -55°C ~ 175°C | 1200 V | 1 Pair Common Cathode | 0 ns | ||
![]() G5S12040B Global Power | In Stock | - | - | Through Hole | TO-247-3 | TO-247AB | - | - | - | 62A (DC) | - | - | - | Global Power Technology-GPT | - | - | - | - | - | - | Cut Tape (CT);Tape & Box (TB); | - | - | Active | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 1200 V | 1.7 V @ 20 A | -55°C ~ 175°C | 1200 V | 1 Pair Common Cathode | 0 ns | ||
![]() G3S17010B Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-247-3 | TO-247AB | - | - | - | 29.5A (DC) | - | - | - | Global Power Technology-GPT | - | - | - | - | - | - | Tape & Box (TB) | - | - | Active | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 1700 V | 1.7 V @ 5 A | -55°C ~ 175°C | 1700 V | 1 Pair Common Cathode | 0 ns | ||
![]() G3S12020B Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-247-2 | TO-247AC | - | - | - | 37A (DC) | - | - | - | Global Power Technology-GPT | - | - | - | - | - | - | Tape & Box (TB) | - | - | Active | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 1200 V | 1.7 V @ 10 A | -55°C ~ 175°C | 1200 V | 1 Pair Common Cathode | 0 ns | ||
![]() G3S12010BM Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-247-3 | TO-247AB | - | - | - | 19.8A (DC) | - | - | - | Global Power Technology-GPT | - | - | - | - | - | - | Tape & Box (TB) | - | - | Active | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 1200 V | 1.7 V @ 5 A | -55°C ~ 175°C | 1200 V | 1 Pair Common Cathode | 0 ns | ||
![]() G3S12040B Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-247-3 | TO-247AB | - | - | - | 64.5A (DC) | - | - | - | Global Power Technology-GPT | - | - | - | - | - | - | Tape & Box (TB) | - | - | Active | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 1200 V | 1.7 V @ 15 A | -55°C ~ 175°C | 1200 V | 1 Pair Common Cathode | 0 ns | ||
![]() G3S12004B Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-247-3 | TO-247AB | - | - | - | 8.5A (DC) | - | - | - | Global Power Technology-GPT | - | - | - | - | - | - | Tape & Box (TB) | - | - | Active | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 1200 V | 1.7 V @ 2 A | -55°C ~ 175°C | 1200 V | 1 Pair Common Cathode | 0 ns | ||
![]() G4S12020BM Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-247-3 | TO-247AB | - | - | - | 33.2A (DC) | - | - | - | Global Power Technology-GPT | - | - | - | - | - | - | Tape & Box (TB) | - | - | Active | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 30 μA @ 1200 V | 1.6 V @ 10 A | -55°C ~ 175°C | 1200 V | 1 Pair Common Cathode | 0 ns | ||
![]() G5S12040B Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-247-3 | TO-247AB | - | - | - | 62A (DC) | - | - | - | Global Power Technology-GPT | - | - | - | - | - | - | Tape & Box (TB) | - | - | Active | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 1200 V | 1.7 V @ 20 A | -55°C ~ 175°C | 1200 V | 1 Pair Common Cathode | 0 ns | ||
![]() G3S06506B Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-247-3 | TO-247AB | - | - | - | 14A (DC) | - | - | - | Global Power Technology-GPT | - | - | - | - | - | - | Tape & Box (TB) | - | - | Active | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | 1.7 V @ 3 A | -55°C ~ 175°C | 650 V | 1 Pair Common Cathode | 0 ns | ||
![]() GP2D040A120U Global Power | 15 | - | - | Through Hole | TO-247-3 | TO-247-3 | Blue | Class 6 = very flexible | Numbers | 65A (DC) | - | No | Polyurethane (PUR) | - | 57 | 35 | 0.5 | 500 | 300 | 11.4 | - | -40 - 80 | -30 - 80 | - | - | Braiding | None | No | Tube | Amp+™ | Active | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 40µA @ 1200V | 1.8V @ 20A | -55°C ~ 175°C | 1200V | 1 Pair Common Cathode | - | ||
![]() G3S17010B Global Power | In Stock | - | - | Through Hole | TO-247-3 | TO-247AB | - | - | - | 29.5A (DC) | - | - | - | Global Power Technology-GPT | - | - | - | - | - | - | Cut Tape (CT);Tape & Box (TB); | - | - | Active | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 1700 V | 1.7 V @ 5 A | -55°C ~ 175°C | 1700 V | 1 Pair Common Cathode | 0 ns | ||
![]() G3S12006B Global Power | In Stock | - | - | Through Hole | TO-247-3 | TO-247AB | - | - | - | 14A (DC) | - | - | - | Global Power Technology-GPT | - | - | - | - | - | - | Cut Tape (CT);Tape & Box (TB); | - | - | Active | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 100 µA @ 1200 V | 1.7 V @ 3 A | -55°C ~ 175°C | 1200 V | 1 Pair Common Cathode | 0 ns | ||
![]() G3S12030B Global Power | In Stock | - | - | Through Hole | TO-247-3 | TO-247AB | - | - | - | 42A (DC) | - | - | - | Global Power Technology-GPT | - | - | - | - | - | - | Cut Tape (CT);Tape & Box (TB); | - | - | Active | No | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 1200 V | 1.7 V @ 15 A | -55°C ~ 175°C | 1200 V | 1 Pair Common Cathode | 0 ns | ||
![]() G3S12030B Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-247-3 | TO-247AB | - | - | - | 42A (DC) | - | - | - | Global Power Technology-GPT | - | - | - | - | - | - | Tape & Box (TB) | - | - | Active | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 1200 V | 1.7 V @ 15 A | -55°C ~ 175°C | 1200 V | 1 Pair Common Cathode | 0 ns |