- Series
- Diode Type
- Mounting Type
- Operating Temperature - Junction
- Package / Case
- Speed
- Supplier Device Package
- Voltage - DC Reverse (Vr) (Max)
- Current - Reverse Leakage @ Vr
- Voltage - Forward (Vf) (Max) @ If
- Reverse Recovery Time (trr)
- Mfr
Attribute column
Manufacturer
Global Power Diodes - Rectifiers - Single
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Mounting Type | Package / Case | Supplier Device Package | Config. | IF(A),Tc=125℃ | IF(A),Tc=160℃ | IF(A),Tc=25℃ | Ifsm(A),Tc=25℃ | Mfr | Package | Product Status | Ptot(W),Tc=110℃ | Ptot(W),Tc=25℃ | Qc(nC),TJ=25℃ | Rad Hardened | Vrrm(V) | Packaging | Series | Part Status | Speed | Diode Type | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Capacitance @ Vr, F | Reverse Recovery Time (trr) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 GP2D008A065C Global Power | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
GSXD300A170S2D5 Global Power | In Stock | - | - | Chassis Mount | ADD-A-PAK (3) | ADD-A-PAK® | - | - | - | - | - | - | - | - | - | - | - | - | - | Bulk | Amp+™ | Active | Standard Recovery >500ns, > 200mA (Io) | Standard | - | 1.9V @ 300A | -40°C ~ 150°C | 1700V | 300A (DC) | -- | 540ns | ||
G3S06505D Global Power | In Stock | - | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | - | - | - | - | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | No | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 650 V | 1.7 V @ 5 A | -55°C ~ 175°C | 650 V | 22.6A | 424pF @ 0V, 1MHz | 0 ns | ||
G3S12020A Global Power | 52388 | - | - | Through Hole | TO-220-2 | TO-220AC | - | - | - | - | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 1200 V | 1.7 V @ 120 A | -55°C ~ 175°C | 1200 V | 73A | 2600pF @ 0V, 1MHz | 0 ns | ||
G5S12020PM Global Power | In Stock | - | - | Through Hole | TO-247-2 | TO-247AC | - | - | - | - | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 1200 V | 1.7 V @ 20 A | -55°C ~ 175°C | 1200 V | 62A | 1320pF @ 0V, 1MHz | 0 ns | ||
G3S06510A Global Power | In Stock | - | - | Through Hole | TO-220-2 | TO-220AC | - | - | - | - | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 650 V | 1.7 V @ 10 A | -55°C ~ 175°C | 650 V | 35A | 690pF @ 0V, 1MHz | 0 ns | ||
G3S06510D Global Power | 100000 | - | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | - | - | - | - | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | No | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 650 V | 1.7 V @ 10 A | -55°C ~ 175°C | 650 V | 34A | 690pF @ 0V, 1MHz | 0 ns | ||
G5S12005D Global Power | In Stock | - | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | - | - | - | - | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 1200 V | 1.7 V @ 5 A | -55°C ~ 175°C | 1200 V | 21A | 424pF @ 0V, 1MHz | 0 ns | ||
G5S12010D Global Power | In Stock | - | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | - | - | - | - | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 1200 V | 1.7 V @ 10 A | -55°C ~ 175°C | 1200 V | 30.9A | 825pF @ 0V, 1MHz | 0 ns | ||
 G4S6508Z Global Power Technology-GPT | In Stock | - | - | Surface Mount | 8-PowerTDFN | 8-DFN (4.9x5.75) | Single | 10.9（135℃） | 8（150.5℃） | 23.2 | 54 | Global Power Technology-GPT | Tape & Box (TB) | Active | 41 | 94 | 21（VR=400V） | - | 650 | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | 1.7 V @ 8 A | -55°C ~ 175°C | 650 V | 30.5A | 395pF @ 0V, 1MHz | 0 ns | ||
G5S06510HT Global Power Technology-GPT | 100000 | - | - | Through Hole | TO-220-2 Full Pack | TO-220F | - | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | - | -55°C ~ 175°C | 650 V | 23.8A | - | 0 ns | ||
GAS06520H Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-220-2 Full Pack | TO-220F | - | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | 1.7 V @ 20 A | -55°C ~ 175°C | 650 V | 30A | 1390pF @ 0V, 1MHz | 0 ns | ||
G3S12010A Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-220-2 | TO-220AC | - | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 1200 V | 1.7 V @ 10 A | -55°C ~ 175°C | 1200 V | 34.8A | 770pF @ 0V, 1MHz | 0 ns | ||
G3S06510M Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-220-2 Full Pack | TO-220F | Single | 9.8(135℃) | 10（133.5℃） | 22.1 | 100 | Global Power Technology-GPT | Tape & Box (TB) | Active | 26 | 60 | 32（VR=400V） | - | 650 | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | 1.7 V @ 10 A | -55°C ~ 175°C | 650 V | 21A | 690pF @ 0V, 1MHz | 0 ns | ||
 G5S06508AT Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-220-2 | TO-220AC | Single | 15.2(135℃) | 8（160.5℃） | 32.7 | 80 | Global Power Technology-GPT | Tape & Box (TB) | Active | 54 | 125 | 28（VR=400V） | - | 650 | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | 1.5 V @ 8 A | -55°C ~ 175°C | 650 V | 30.5A | 550pF @ 0V, 1MHz | 0 ns | ||
G3S12003H Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-220-2 Full Pack | TO-220F | - | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 100 μA @ 1200 V | 1.7 V @ 3 A | -55°C ~ 175°C | 1200 V | 9A | 260pF @ 0V, 1MHz | 0 ns | ||
 G5S06510QT Global Power Technology-GPT | In Stock | - | - | Surface Mount | 4-PowerTSFN | 4-DFN (8x8) | Single | 15（135℃） | 10（154℃） | 31.9 | 90 | Global Power Technology-GPT | Tape & Box (TB) | Active | 52 | 120 | 32（VR=400V） | - | 650 | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | 1.5 V @ 10 A | -55°C ~ 175°C | 650 V | 53A | 645pF @ 0V, 1MHz | 0 ns | ||
G4S06508QT Global Power Technology-GPT | In Stock | - | - | Surface Mount | 4-PowerTSFN | 4-DFN (8x8) | Single | 11.2(135℃) | 8（152℃） | 24 | 60 | Global Power Technology-GPT | Tape & Box (TB) | Active | 43 | 99 | 21（VR=400V） | - | 650 | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | 1.7 V @ 8 A | -55°C ~ 175°C | 650 V | 34A | 395pF @ 0V, 1MHz | 0 ns | ||
G4S12020A Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-220-2 | TO-220AC | - | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 1200 V | 1.7 V @ 120 A | -55°C ~ 175°C | 1200 V | 73A | 2600pF @ 0V, 1MHz | 0 ns | ||
G5S06506QT Global Power Technology-GPT | In Stock | - | - | Surface Mount | 4-PowerTSFN | 4-DFN (8x8) | Single | 10.9（135℃） | 6（159.5℃） | 23.3 | 60 | Global Power Technology-GPT | Tape & Box (TB) | Active | 41 | 94 | 21（VR=400V） | - | 650 | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | 1.5 V @ 6 A | -55°C ~ 175°C | 650 V | 34A | 395pF @ 0V, 1MHz | 0 ns |