- Series
- Diode Type
- Mounting Type
- Operating Temperature - Junction
- Package / Case
- Speed
- Supplier Device Package
- Voltage - DC Reverse (Vr) (Max)
- Current - Reverse Leakage @ Vr
- Voltage - Forward (Vf) (Max) @ If
- Reverse Recovery Time (trr)
- Mfr
Attribute column
Manufacturer
Global Power Diodes - Rectifiers - Single
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Mounting Type | Package / Case | Supplier Device Package | Config. | IF(A),Tc=125℃ | IF(A),Tc=160℃ | IF(A),Tc=25℃ | Ifsm(A),Tc=25℃ | Mfr | Package | Product Status | Ptot(W),Tc=110℃ | Ptot(W),Tc=25℃ | Qc(nC),TJ=25℃ | Rad Hardened | Vrrm(V) | Packaging | Series | Part Status | Speed | Diode Type | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Capacitance @ Vr, F | Reverse Recovery Time (trr) |
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![]() GP2D008A065C Global Power | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
![]() GSXD300A170S2D5 Global Power | In Stock | - | - | Chassis Mount | ADD-A-PAK (3) | ADD-A-PAK® | - | - | - | - | - | - | - | - | - | - | - | - | - | Bulk | Amp+™ | Active | Standard Recovery >500ns, > 200mA (Io) | Standard | - | 1.9V @ 300A | -40°C ~ 150°C | 1700V | 300A (DC) | -- | 540ns | ||
![]() G3S17010A Global Power | In Stock | - | - | Through Hole | TO-220-2 | TO-220AC | - | - | - | - | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | No | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 100 µA @ 1700 V | 1.7 V @ 10 A | -55°C ~ 175°C | 1700 V | 24A | 1500pF @ 0V, 1MHz | 0 ns | ||
![]() G51XT Global Power | 99800 | - | - | Surface Mount | SOD-123F | SOD-123FL | - | - | - | - | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 650 V | 1.6 V @ 1 A | -55°C ~ 175°C | 650 V | 1.84A | 57.5pF @ 0V, 1MHz | 0 ns | ||
![]() G5S12008H Global Power | In Stock | - | - | Through Hole | TO-220-2 Full Pack | TO-220F | - | - | - | - | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 1200 V | 1.7 V @ 8 A | -55°C ~ 175°C | 1200 V | 16A | 550pF @ 0V, 1MHz | 0 ns | ||
![]() G3S06004J Global Power | In Stock | - | - | Through Hole | TO-220-2 Isolated Tab | TO-220ISO | - | - | - | - | - | Global Power Technology Co. Ltd | Bulk | Active | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 600 V | 1.7 V @ 4 A | -55°C ~ 175°C | 600 V | 11A | 181pF @ 0V, 1MHz | 0 ns | ||
![]() G5S12002H Global Power | In Stock | - | - | Through Hole | TO-220-2 Full Pack | TO-220F | - | - | - | - | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 1200 V | 1.7 V @ 2 A | -55°C ~ 175°C | 1200 V | 7.5A | 170pF @ 0V, 1MHz | 0 ns | ||
![]() G3S17005C Global Power | In Stock | - | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | - | - | - | - | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | No | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 1700 V | 1.7 V @ 5 A | -55°C ~ 175°C | 1700 V | 27A | 780pF @ 0V, 1MHz | 0 ns | ||
![]() G4S06508DT Global Power | In Stock | - | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | - | - | - | - | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 650 V | 1.7 V @ 8 A | -55°C ~ 175°C | 650 V | 24A | 395pF @ 0V, 1MHz | 0 ns | ||
![]() G5S6506Z Global Power | In Stock | - | - | Surface Mount | 8-PowerTDFN | 8-DFN (4.9x5.75) | - | - | - | - | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 650 V | 1.5 V @ 6 A | -55°C ~ 175°C | 650 V | 30.5A | 395pF @ 0V, 1MHz | 0 ns | ||
![]() G4S6508Z Global Power Technology-GPT | In Stock | - | - | Surface Mount | 8-PowerTDFN | 8-DFN (4.9x5.75) | Single | 10.9(135℃) | 8(150.5℃) | 23.2 | 54 | Global Power Technology-GPT | Tape & Box (TB) | Active | 41 | 94 | 21(VR=400V) | - | 650 | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | 1.7 V @ 8 A | -55°C ~ 175°C | 650 V | 30.5A | 395pF @ 0V, 1MHz | 0 ns | ||
![]() G5S06510HT Global Power Technology-GPT | 100000 | - | - | Through Hole | TO-220-2 Full Pack | TO-220F | - | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | - | -55°C ~ 175°C | 650 V | 23.8A | - | 0 ns | ||
![]() GAS06520H Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-220-2 Full Pack | TO-220F | - | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | 1.7 V @ 20 A | -55°C ~ 175°C | 650 V | 30A | 1390pF @ 0V, 1MHz | 0 ns | ||
![]() G3S12010A Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-220-2 | TO-220AC | - | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 1200 V | 1.7 V @ 10 A | -55°C ~ 175°C | 1200 V | 34.8A | 770pF @ 0V, 1MHz | 0 ns | ||
![]() G3S06510M Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-220-2 Full Pack | TO-220F | Single | 9.8(135℃) | 10(133.5℃) | 22.1 | 100 | Global Power Technology-GPT | Tape & Box (TB) | Active | 26 | 60 | 32(VR=400V) | - | 650 | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | 1.7 V @ 10 A | -55°C ~ 175°C | 650 V | 21A | 690pF @ 0V, 1MHz | 0 ns | ||
![]() G5S06508AT Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-220-2 | TO-220AC | Single | 15.2(135℃) | 8(160.5℃) | 32.7 | 80 | Global Power Technology-GPT | Tape & Box (TB) | Active | 54 | 125 | 28(VR=400V) | - | 650 | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | 1.5 V @ 8 A | -55°C ~ 175°C | 650 V | 30.5A | 550pF @ 0V, 1MHz | 0 ns | ||
![]() G3S12003H Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-220-2 Full Pack | TO-220F | - | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 100 μA @ 1200 V | 1.7 V @ 3 A | -55°C ~ 175°C | 1200 V | 9A | 260pF @ 0V, 1MHz | 0 ns | ||
![]() G5S06510QT Global Power Technology-GPT | In Stock | - | - | Surface Mount | 4-PowerTSFN | 4-DFN (8x8) | Single | 15(135℃) | 10(154℃) | 31.9 | 90 | Global Power Technology-GPT | Tape & Box (TB) | Active | 52 | 120 | 32(VR=400V) | - | 650 | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | 1.5 V @ 10 A | -55°C ~ 175°C | 650 V | 53A | 645pF @ 0V, 1MHz | 0 ns | ||
![]() G4S06508QT Global Power Technology-GPT | In Stock | - | - | Surface Mount | 4-PowerTSFN | 4-DFN (8x8) | Single | 11.2(135℃) | 8(152℃) | 24 | 60 | Global Power Technology-GPT | Tape & Box (TB) | Active | 43 | 99 | 21(VR=400V) | - | 650 | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | 1.7 V @ 8 A | -55°C ~ 175°C | 650 V | 34A | 395pF @ 0V, 1MHz | 0 ns | ||
![]() G4S12020A Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-220-2 | TO-220AC | - | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 1200 V | 1.7 V @ 120 A | -55°C ~ 175°C | 1200 V | 73A | 2600pF @ 0V, 1MHz | 0 ns |