- Series
- Diode Type
- Mounting Type
- Operating Temperature - Junction
- Package / Case
- Speed
- Supplier Device Package
- Voltage - DC Reverse (Vr) (Max)
- Current - Reverse Leakage @ Vr
- Voltage - Forward (Vf) (Max) @ If
- Reverse Recovery Time (trr)
- Mfr
Attribute column
Manufacturer
Global Power Diodes - Rectifiers - Single
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Mounting Type | Package / Case | Supplier Device Package | Config. | Current - Average Rectified (Io) (per Diode) | IF(A),Tc=125℃ | IF(A),Tc=160℃ | IF(A),Tc=25℃ | Ifsm(A),Tc=25℃ | Mfr | Package | Product Status | Ptot(W),Tc=110℃ | Ptot(W),Tc=25℃ | Qc(nC),TJ=25℃ | Vrrm(V) | Operating Temperature | Series | Size / Dimension | Type | Frequency | Frequency Stability | ESR (Equivalent Series Resistance) | Load Capacitance | Speed | Diode Type | Current - Reverse Leakage @ Vr | Operating Mode | Voltage - Forward (Vf) (Max) @ If | Frequency Tolerance | Operating Temperature - Junction | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Capacitance @ Vr, F | Diode Configuration | Reverse Recovery Time (trr) | Height Seated (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 G3S17005A Global Power Technology-GPT | 100000 | - | - | Through Hole | TO-220-2 | TO-220AC | Single | - | 14.2（135℃） | 5（168.5℃) | 28.9 | 120 | Global Power Technology-GPT | Tape & Box (TB) | Active | 96 | 221 | 63（VR=1200V） | 1700 | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 1700 V | - | 1.7 V @ 5 A | - | -55°C ~ 175°C | 1700 V | 28A | 800pF @ 0V, 1MHz | - | 0 ns | - | ||
 G5S06510PT Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-247-2 | TO-247AC | Single | - | - | 10（157℃） | 34.6 | 120 | Global Power Technology-GPT | Tape & Box (TB) | Active | 60 | 139 | 32（VR=400V） | 650 | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | - | 1.5 V @ 10 A | - | -55°C ~ 175°C | 650 V | 39A | 645pF @ 0V, 1MHz | - | 0 ns | - | ||
 G3S06530PM Global Power | In Stock | - | - | Surface Mount | 4-SMD, No Lead | TO-247AC | - | - | - | - | - | - | Suntsu Electronics, Inc. | Bulk | Active | - | - | - | - | -30°C ~ 85°C | SXT214 | 0.079 L x 0.063 W (2.00mm x 1.60mm) | MHz Crystal | 40 MHz | ±50ppm | 100 Ohms | 8pF | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 650 V | Fundamental | 1.7 V @ 30 A | ±30ppm | - | 650 V | 92A | 2010pF @ 0V, 1MHz | - | 0 ns | 0.020 (0.50mm) | ||
G5S06506QT Global Power | In Stock | - | - | Surface Mount | 4-PowerTSFN | 4-DFN (8x8) | - | - | - | - | - | - | PEI-Genesis | Bulk | Active | - | - | - | - | - | * | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 650 V | - | 1.5 V @ 6 A | - | -55°C ~ 175°C | 650 V | 34A | 395pF @ 0V, 1MHz | - | 0 ns | - | ||
 G3S06502C-ASE Global Power | 100000 | - | - | - | - | - | Single | - | 3(135℃) | 2（155.5℃） | 6.3 | 18 | - | - | - | 14 | 33 | 4（VR=400V） | 650 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
G3S06530D Global Power | 100000 | - | - | - | - | - | Single | - | 45.4(135℃) | 30(154.5℃) | 97.8 | 230 | - | - | - | 159 | 366 | 99（VR=400V） | 650 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
G5S12005H Global Power | In Stock | - | - | - | - | - | Single | - | - | 5（153℃) | 17 | 75 | - | - | - | 32.3 | 74.6 | 28（VR=800V） | 1200 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
 G5S12030BMT Global Power | In Stock | - | - | - | - | - | Double | - | 18.4*(135℃) | 15*(147℃） | - | - | - | - | - | - | - | 54（VR=800V） | 1200 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
G5S12040PPMT Global Power | 100000 | - | - | - | - | - | Double | - | 51.7（135℃） | 40(149℃) | 107.9 | 350 | - | - | - | 224 | 517 | 160（VR=800V） | 1200 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
G5S12040PMT Global Power | In Stock | - | - | - | - | - | Single | - | 46.4（135℃） | 40(144℃) | 97.6 | 260 | - | - | - | 188 | 435 | 166（VR=800V） | 1200 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
G5S06520AT Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-220-2 | TO-220AC | - | - | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | - | - | - | - | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | - | 1.5 V @ 20 A | - | -55°C ~ 175°C | 650 V | 68.8A | 1600pF @ 0V, 1MHz | - | 0 ns | - | ||
G5S12040BM Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-247-3 | TO-247AB | Double | 62A (DC) | 26.5*(135℃) | 20*(150℃） | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | - | - | 103（VR=800V） | 1200 | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 1200 V | - | 1.7 V @ 20 A | - | -55°C ~ 175°C | 1200 V | - | - | 1 Pair Common Cathode | 0 ns | - | ||
G3S06503D Global Power Technology-GPT | In Stock | - | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263 | - | - | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | - | - | - | - | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | - | 1.7 V @ 3 A | - | -55°C ~ 175°C | 650 V | 11.5A | 181pF @ 0V, 1MHz | - | 0 ns | - | ||
G3S17005P Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-247-2 | TO-247AC | Single | - | 13（135℃） | 5（167℃） | 26.5 | 120 | Global Power Technology-GPT | Tape & Box (TB) | Active | 81 | 188 | 63（VR=1200V） | 1700 | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 1700 V | - | 1.7 V @ 5 A | - | -55°C ~ 175°C | 1700 V | 29.5A | 780pF @ 0V, 1MHz | - | 0 ns | - | ||
 G4S06510QT Global Power Technology-GPT | In Stock | - | - | Surface Mount | 4-PowerTSFN | 4-DFN (8x8) | Single | - | 13.8(135°C) | 10（151°C） | 29.8 | 80 | Global Power Technology-GPT | Tape & Box (TB) | Active | 46 | 106 | 28（VR=400V） | 650 | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | - | 1.7 V @ 10 A | - | -55°C ~ 175°C | 650 V | 44.9A | 550pF @ 0V, 1MHz | - | 0 ns | - | ||
G3S12015H Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-220-2 Full Pack | TO-220F | - | - | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | - | - | - | - | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 1200 V | - | 1.7 V @ 15 A | - | -55°C ~ 175°C | 1200 V | 21A | 1700pF @ 0V, 1MHz | - | 0 ns | - | ||
G4S12010PM Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-247-2 | TO-247AC | - | - | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | - | - | - | - | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 30 μA @ 1700 V | - | - | - | -55°C ~ 175°C | 1200 V | 33.2A | - | - | 0 ns | - | ||
G3S06550P Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-247-2 | TO-247AC | - | - | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | - | - | - | - | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 100 μA @ 650 V | - | 1.7 V @ 50 A | - | -55°C ~ 175°C | 650 V | 105A | 4400pF @ 0V, 1MHz | - | 0 ns | - | ||
G5S12008H Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-220-2 Full Pack | TO-220F | - | - | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | - | - | - | - | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 1200 V | - | 1.7 V @ 8 A | - | -55°C ~ 175°C | 1200 V | 16A | 550pF @ 0V, 1MHz | - | 0 ns | - | ||
G3S17010A Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-220-2 | TO-220AC | Single | - | 25.6（135℃） | 10（167℃） | 52.5 | 200 | Global Power Technology-GPT | Tape & Box (TB) | Active | 151 | 349 | 120（VR=1200V） | 1700 | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 100 μA @ 1700 V | - | 1.7 V @ 10 A | - | -55°C ~ 175°C | 1700 V | 24A | 1500pF @ 0V, 1MHz | - | 0 ns | - |