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  • Voltage - DC Reverse (Vr) (Max)
  • Current - Reverse Leakage @ Vr
  • Voltage - Forward (Vf) (Max) @ If
  • Reverse Recovery Time (trr)
  • Mfr

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Manufacturer

Global Power Diodes - Rectifiers - Single

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422 Results

Product

Inventory

Pricing(USD)

Quantity

Datasheet

RoHS

Mounting Type

Package / Case

Supplier Device Package

Config.

Current - Average Rectified (Io) (per Diode)

IF(A) Tc=125℃

IF(A) Tc=25℃

IF(A),Tc=125℃

IF(A),Tc=160℃

IF(A),Tc=25℃

Ifsm(A),Tc=25℃

IR（uA）Tj=175℃max

IR（uA）Tj=175℃typ

IR（uA）Tj=25℃ typ

IR（uA）Tj=25℃max

Mfr

Package

Product Status

Ptot(W),Tc=110℃

Ptot(W),Tc=25℃

Qc(nC),TJ=25℃

Rad Hardened

VF（V）Tj=175℃max

VF（V）Tj=175℃typ

VF（V）Tj=25℃ typ

VF（V）Tj=25℃max

Vrrm(V)

Packaging

Series

Part Status

Speed

Diode Type

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Operating Temperature - Junction

Voltage - DC Reverse (Vr) (Max)

Current - Average Rectified (Io)

Capacitance @ Vr, F

Diode Configuration

Reverse Recovery Time (trr)

G3S06006J
G3S06006J

Global Power

In Stock

-

-

Through Hole

TO-220-2 Isolated Tab

TO-220ISO

-

-

-

-

-

-

-

-

-

-

-

-

Global Power Technology Co. Ltd

Bulk

Active

-

-

-

-

-

-

-

-

-

-

-

-

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

50 µA @ 600 V

1.7 V @ 6 A

-55°C ~ 175°C

600 V

21.5A

424pF @ 0V, 1MHz

-

0 ns

G3S06508J
G3S06508J

Global Power Technology-GPT

In Stock

-

-

Through Hole

TO-220-2 Isolated Tab

TO-220ISO

Single

-

-

-

9.8(135℃)

8（146℃）

21.7

88

-

-

-

-

Global Power Technology-GPT

Tape & Box (TB)

Active

30

68

28（VR=400V）

-

-

-

-

-

650

-

-

-

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

50 μA @ 650 V

1.7 V @ 8 A

-55°C ~ 175°C

650 V

23A

550pF @ 0V, 1MHz

-

0 ns

G5S12015L
G5S12015L

Global Power Technology-GPT

In Stock

-

-

Through Hole

TO-247-3

TO-247AB

-

-

-

-

-

-

-

-

-

-

-

-

Global Power Technology-GPT

Tape & Box (TB)

Active

-

-

-

-

-

-

-

-

-

-

-

-

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

50 μA @ 1200 V

1.7 V @ 15 A

-55°C ~ 175°C

1200 V

55A

1370pF @ 0V, 1MHz

-

0 ns

G5S06510AT
G5S06510AT

Global Power Technology-GPT

In Stock

-

-

Through Hole

TO-220-2

TO-220AC

Single

-

-

-

16.7（135℃）

10（156.5℃）

34

100

-

-

-

-

Global Power Technology-GPT

Tape & Box (TB)

Active

59

135

32（VR=400V）

-

-

-

-

-

650

-

-

-

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

50 μA @ 650 V

1.5 V @ 10 A

-55°C ~ 175°C

650 V

36A

645pF @ 0V, 1MHz

-

0 ns

G5S12020A
G5S12020A

Global Power Technology-GPT

100000

-

-

Through Hole

TO-220-2

TO-220AC

-

-

34.5

63.5

-

20

-

240

100

50

15

50

Global Power Technology-GPT

TO-220AC

Active

-

-

-

-

2.5

2

1.45

1.7

-

-

-

-

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

50 μA @ 1200 V

1.7 V @ 20 A

-55°C ~ 175°C

1200 V

63.5A

1320pF @ 0V, 1MHz

-

0 ns

G3S12003A
G3S12003A

Global Power Technology-GPT

In Stock

-

-

Through Hole

TO-220-2

TO-220AC

-

-

-

-

-

-

-

-

-

-

-

-

Global Power Technology-GPT

Tape & Box (TB)

Active

-

-

-

-

-

-

-

-

-

-

-

-

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

100 μA @ 1200 V

1.7 V @ 3 A

-55°C ~ 175°C

1200 V

12A

260pF @ 0V, 1MHz

-

0 ns

G3S12015A
G3S12015A

Global Power Technology-GPT

In Stock

-

-

Through Hole

TO-220-2

TO-220AC

-

-

-

-

-

-

-

-

-

-

-

-

Global Power Technology-GPT

Tape & Box (TB)

Active

-

-

-

-

-

-

-

-

-

-

-

-

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

50 μA @ 1200 V

1.7 V @ 15 A

-55°C ~ 175°C

1200 V

57A

1700pF @ 0V, 1MHz

-

0 ns

G3S06510B
G3S06510B

Global Power Technology-GPT

In Stock

-

-

Through Hole

TO-247-3

TO-247AB

Double

27A (DC)

-

-

10.6*(135℃)

5*(162.5℃)

-

-

-

-

-

-

Global Power Technology-GPT

Tape & Box (TB)

Active

-

-

22（VR=400V）

-

-

-

-

-

650

-

-

-

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

50 μA @ 650 V

1.7 V @ 5 A

-55°C ~ 175°C

650 V

-

-

1 Pair Common Cathode

0 ns

G3S06520P
G3S06520P

Global Power Technology-GPT

In Stock

-

-

Through Hole

TO-247-2

TO-247AC

Single

-

-

-

23.4(135℃)

20（144℃)

50.4

160

-

-

-

-

Global Power Technology-GPT

Tape & Box (TB)

Active

77

179

52（VR=400V）

-

-

-

-

-

650

-

-

-

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

50 μA @ 650 V

1.7 V @ 20 A

-55°C ~ 175°C

650 V

60A

1170pF @ 0V, 1MHz

-

0 ns

G3S06512B
G3S06512B

Global Power Technology-GPT

In Stock

-

-

Through Hole

TO-247-3

TO-247AB

Double

27A (DC)

-

-

10.6*(135℃)

6*(159℃)

-

-

-

-

-

-

Global Power Technology-GPT

Tape & Box (TB)

Active

-

-

22（VR=400V）

-

-

-

-

-

650

-

-

-

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

50 μA @ 650 V

1.7 V @ 6 A

-55°C ~ 175°C

650 V

-

-

1 Pair Common Cathode

0 ns

G3S12010M
G3S12010M

Global Power Technology-GPT

In Stock

-

-

Through Hole

TO-220-2 Full Pack

TO-220F

Single Core

-

12.8

23.5

-

10（142°C）

-

140

100

3

0.7

50

Global Power Technology-GPT

TO-220F

Active

-

-

-

-

2.6

2.35

1.55

1.7

1200

-

-

-

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

50 μA @ 1200 V

1.7 V @ 10 A

-55°C ~ 175°C

1200 V

23.5A

765pF @ 0V, 1MHz

-

0 ns

GP2D005A065A
GP2D005A065A

Global Power

10

-

-

Through Hole

TO-220-2

TO-220-2

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Tube

Amp+™

Active

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

50µA @ 650V

1.65V @ 5A

-55°C ~ 175°C

650V

15A (DC)

264pF @ 1V, 1MHz

-

-

G3S17005P
G3S17005P

Global Power

100000

-

-

Through Hole

TO-247-2

TO-247AC

-

-

-

-

-

-

-

-

-

-

-

-

Global Power Technology-GPT

Cut Tape (CT);Tape & Box (TB);

Active

-

-

-

No

-

-

-

-

-

-

-

-

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

50 µA @ 1700 V

1.7 V @ 5 A

-55°C ~ 175°C

1700 V

29.5A

780pF @ 0V, 1MHz

-

0 ns

G5S06510DT
G5S06510DT

Global Power

100000

-

-

Surface Mount

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

TO-263

-

-

-

-

-

-

-

-

-

-

-

-

Global Power Technology-GPT

Cut Tape (CT);Tape & Box (TB);

Active

-

-

-

-

-

-

-

-

-

-

-

-

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

50 µA @ 650 V

1.5 V @ 10 A

-55°C ~ 175°C

650 V

38A

645pF @ 0V, 1MHz

-

0 ns

G5S06506CT
G5S06506CT

Global Power Technology-GPT

In Stock

-

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

TO-252

Single

-

-

-

12.3（135℃）

6（162.5℃）

26

60

-

-

-

-

Global Power Technology-GPT

Tape & Box (TB)

Active

50

115

21（VR=400V）

-

-

-

-

-

650

-

-

-

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

50 μA @ 650 V

1.5 V @ 6 A

-55°C ~ 175°C

650 V

24A

395pF @ 0V, 1MHz

-

0 ns

G3S12002C
G3S12002C

Global Power Technology-GPT

In Stock

-

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

TO-252

-

-

-

-

-

-

-

-

-

-

-

-

Global Power Technology-GPT

Tape & Box (TB)

Active

-

-

-

-

-

-

-

-

-

-

-

-

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

50 μA @ 1200 V

1.7 V @ 2 A

-55°C ~ 175°C

1200 V

8.8A

170pF @ 0V, 1MHz

-

0 ns

G5S12008D
G5S12008D

Global Power Technology-GPT

In Stock

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263

Single

-

-

-

11.3（135℃）

8(152.5℃)

23.9

96

-

-

-

-

Global Power Technology-GPT

Tape & Box (TB)

Active

46

106

38（VR=800V）

-

-

-

-

-

1200

-

-

-

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

50 μA @ 1200 V

1.7 V @ 8 A

-55°C ~ 175°C

1200 V

26.1A

550pF @ 0V, 1MHz

-

0 ns

G4S06530BT
G4S06530BT

Global Power Technology-GPT

In Stock

-

-

Through Hole

TO-247-3

TO-247AB

Double

39A (DC)

-

-

16.9*(135℃)

15* （142°C）

-

-

-

-

-

-

Global Power Technology-GPT

Tape & Box (TB)

Active

-

-

32（VR=400V）

-

-

-

-

-

650

-

-

-

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

50 μA @ 650 V

1.7 V @ 15 A

-55°C ~ 175°C

650 V

-

-

1 Pair Common Cathode

0 ns

G51XT
G51XT

Global Power Technology-GPT

In Stock

-

-

Surface Mount

SOD-123F

SOD-123FL

Single

-

-

-

1.6 (135°C）

1 (156°C）

3.4

12

-

-

-

-

Global Power Technology-GPT

Tape & Box (TB)

Active

6.5

15

3.1（VR=400V）

-

-

-

-

-

650

-

-

-

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

50 μA @ 650 V

1.6 V @ 1 A

-55°C ~ 175°C

650 V

1.84A

57.5pF @ 0V, 1MHz

-

0 ns

G3S12005H
G3S12005H

Global Power Technology-GPT

In Stock

-

-

Through Hole

TO-220-2 Full Pack

TO-220F

-

-

-

-

-

-

-

-

-

-

-

-

Global Power Technology-GPT

Tape & Box (TB)

Active

-

-

-

-

-

-

-

-

-

-

-

-

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

50 μA @ 1200 V

1.7 V @ 5 A

-55°C ~ 175°C

1200 V

21A

475pF @ 0V, 1MHz

-

0 ns

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