- Series
- Diode Type
- Mounting Type
- Operating Temperature - Junction
- Package / Case
- Speed
- Supplier Device Package
- Voltage - DC Reverse (Vr) (Max)
- Current - Reverse Leakage @ Vr
- Voltage - Forward (Vf) (Max) @ If
- Reverse Recovery Time (trr)
- Mfr
Attribute column
Manufacturer
Global Power Diodes - Rectifiers - Single
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Mounting Type | Package / Case | Supplier Device Package | Config. | Current - Average Rectified (Io) (per Diode) | IF(A) Tc=125℃ | IF(A) Tc=25℃ | IF(A),Tc=125℃ | IF(A),Tc=160℃ | IF(A),Tc=25℃ | Ifsm(A),Tc=25℃ | IR（uA）Tj=175℃max | IR（uA）Tj=175℃typ | IR（uA）Tj=25℃ typ | IR（uA）Tj=25℃max | Mfr | Package | Product Status | Ptot(W),Tc=110℃ | Ptot(W),Tc=25℃ | Qc(nC),TJ=25℃ | VF（V）Tj=175℃max | VF（V）Tj=175℃typ | VF（V）Tj=25℃ typ | VF（V）Tj=25℃max | Vrrm(V) | Series | Speed | Diode Type | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Capacitance @ Vr, F | Diode Configuration | Reverse Recovery Time (trr) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 G5S12002A Global Power Technology-GPT | 100000 | - | - | Through Hole | TO-220-2 | TO-220AC | - | - | 5.5 | 10 | - | 2 | - | 38 | 100 | 4.5 | 1.15 | 50 | Global Power Technology-GPT | TO-220AC | Active | - | - | - | 2.5 | 1.9 | 1.38 | 1.7 | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 1200 V | 1.7 V @ 2 A | -55°C ~ 175°C | 1200 V | 10A | 170pF @ 0V, 1MHz | - | 0 ns | ||
G4S12020P Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-247-2 | TO-247AC | - | - | - | - | - | - | - | - | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | - | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 1200 V | 1.7 V @ 20 A | -55°C ~ 175°C | 1200 V | 64.5A | 2600pF @ 0V, 1MHz | - | 0 ns | ||
G4S06515CT Global Power Technology-GPT | 1000 | - | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | - | - | - | - | - | - | - | - | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | - | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | 1.7 V @ 15 A | -55°C ~ 175°C | 650 V | 35.8A | 645pF @ 0V, 1MHz | - | 0 ns | ||
 G5S12010C Global Power Technology-GPT | 100000 | - | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | Single | - | - | - | 14.8（135℃） | 10(154℃) | 31.3 | 120 | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | 59 | 136 | 55（VR=800V） | - | - | - | - | 1200 | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 1200 V | 1.7 V @ 10 A | -55°C ~ 175°C | 1200 V | 34.2A | 825pF @ 0V, 1MHz | - | 0 ns | ||
 G4S06508JT Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-220-2 Isolated Tab | TO-220ISO | Single | - | - | - | 9.6(135℃) | 8（145.5℃） | 20.8 | 60 | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | 33 | 77 | 21（VR=400V） | - | - | - | - | 650 | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | 1.7 V @ 8 A | -55°C ~ 175°C | 650 V | 23.5A | 395pF @ 0V, 1MHz | - | 0 ns | ||
 G3S06510P Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-247-2 | TO-247AC | Single | - | - | - | 14.3(135℃) | 10(152℃) | 31.6 | 105 | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | 50 | 115 | 32（VR=400V） | - | - | - | - | 650 | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | 1.7 V @ 10 A | -55°C ~ 175°C | 650 V | 32.8A | 690pF @ 0V, 1MHz | - | 0 ns | ||
G5S12020B Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-247-3 | TO-247AB | Dual Core | 33A (DC) | 18 | 33 | - | 10 | - | 142 | 100 | 23 | 4.5 | 50 | Global Power Technology-GPT | TO-247AB-3L | Active | - | - | - | 2.3 | 1.9 | 1.4 | 1.7 | 1200 | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 1200 V | 1.7 V @ 10 A | -55°C ~ 175°C | 1200 V | - | - | 1 Pair Common Cathode | 0 ns | ||
 G4S06515QT Global Power Technology-GPT | In Stock | - | - | Surface Mount | 4-PowerTSFN | 4-DFN (8x8) | Single | - | - | - | - | 15（135℃） | 31.9 | 90 | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | 52 | 120 | 32（VR=400V） | - | - | - | - | 650 | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | 1.7 V @ 15 A | -55°C ~ 175°C | 650 V | 53A | 645pF @ 0V, 1MHz | - | 0 ns | ||
G5S12002C Global Power Technology-GPT | 10000 | - | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | Single | - | - | - | 4.3(135℃) | 2(164℃) | 9 | 30 | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | 21 | 48 | 12（VR=800V） | - | - | - | - | 1200 | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 1200 V | 1.7 V @ 2 A | -55°C ~ 175°C | 1200 V | 8.8A | 170pF @ 0V, 1MHz | - | 0 ns | ||
G3S06508D Global Power Technology-GPT | In Stock | - | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263 | Single | - | - | - | 12.7（135℃） | 8(156℃) | 27.5 | 88 | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | 45 | 103 | 28（VR=400V） | - | - | - | - | 650 | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | 1.7 V @ 8 A | -55°C ~ 175°C | 650 V | 25.5A | 550pF @ 0V, 1MHz | - | 0 ns | ||
G4S06508HT Global Power Technology-GPT | 6000 | - | - | Through Hole | TO-220-2 Full Pack | TO-220F | - | - | - | - | - | - | - | - | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | - | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | 1.7 V @ 8 A | -55°C ~ 175°C | 650 V | 18.5A | 395pF @ 0V, 1MHz | - | 0 ns | ||
 G5S12030BM Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-247-3 | TO-247AB | Double | 55A (DC) | - | - | 20.2*(135℃) | 15*(150.5℃） | - | - | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | - | - | 80（VR=800V） | - | - | - | - | 1200 | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 1200 V | 1.7 V @ 15 A | -55°C ~ 175°C | 1200 V | - | - | 1 Pair Common Cathode | 0 ns | ||
G3S06504D Global Power Technology-GPT | In Stock | - | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263 | - | - | - | - | - | - | - | - | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | - | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | 1.7 V @ 4 A | -55°C ~ 175°C | 650 V | 11.5A | 181pF @ 0V, 1MHz | - | 0 ns | ||
G4S06515DT Global Power Technology-GPT | In Stock | - | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263 | - | - | 20 | 38 | - | 15（145°C） | - | 130 | 100 | 1.4 | 0.5 | 50 | Global Power Technology-GPT | TO-263 | Active | - | - | - | 2.5 | 2 | 1.5 | 1.7 | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | 1.7 V @ 15 A | -55°C ~ 175°C | 650 V | 38A | 645pF @ 0V, 1MHz | - | 0 ns | ||
G5S06508DT Global Power Technology-GPT | In Stock | - | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263 | - | - | - | - | - | - | - | - | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | - | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | 1.5 V @ 8 A | -55°C ~ 175°C | 650 V | 32A | 550pF @ 0V, 1MHz | - | 0 ns | ||
G3S12050P Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-247-2 | TO-247AC | - | - | - | - | - | - | - | - | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | - | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 100 μA @ 1200 V | 1.8 V @ 150 A | -55°C ~ 175°C | 1200 V | 117A | 7500pF @ 0V, 1MHz | - | 0 ns | ||
G5S06504CT Global Power Technology-GPT | In Stock | - | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | Single | - | - | - | 5.9(135℃) | 4（154℃） | 12.4 | 32 | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | 24 | 55 | 10（VR=400V） | - | - | - | - | 650 | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | 1.6 V @ 4 A | -55°C ~ 175°C | 650 V | 13.8A | 181pF @ 0V, 1MHz | - | 0 ns | ||
G4S06510CT Global Power Technology-GPT | 5000 | - | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | Single | - | - | - | - | 10（156℃） | 34.3 | 80 | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | 59 | 136 | 28（VR=400V） | - | - | - | - | 650 | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | 1.7 V @ 10 A | -55°C ~ 175°C | 650 V | 31A | 550pF @ 0V, 1MHz | - | 0 ns | ||
G4S06510HT Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-220-2 Full Pack | TO-220F | Single | - | - | - | - | 10 （130.5°C） | 21 | 80 | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | 25 | 58 | 28（VR=400V） | - | - | - | - | 650 | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | 1.7 V @ 10 A | -55°C ~ 175°C | 650 V | 20A | 550pF @ 0V, 1MHz | - | 0 ns | ||
G3S12002H Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-220-2 Full Pack | TO-220F | - | - | - | - | - | - | - | - | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | - | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 1200 V | 1.7 V @ 2 A | -55°C ~ 175°C | 1200 V | 7.3A | 136pF @ 0V, 1MHz | - | 0 ns |