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  • Operating Temperature - Junction
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  • Supplier Device Package
  • Voltage - DC Reverse (Vr) (Max)
  • Current - Reverse Leakage @ Vr
  • Voltage - Forward (Vf) (Max) @ If
  • Reverse Recovery Time (trr)
  • Mfr

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Manufacturer

Global Power Diodes - Rectifiers - Single

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422 Results

Product

Inventory

Pricing(USD)

Quantity

Datasheet

RoHS

Mounting Type

Package / Case

Supplier Device Package

Config.

IF(A) Tc=125℃

IF(A) Tc=25℃

IF(A),Tc=125℃

IF(A),Tc=160℃

IF(A),Tc=25℃

Ifsm(A),Tc=25℃

IR（uA）Tj=175℃max

IR（uA）Tj=175℃typ

IR（uA）Tj=25℃ typ

IR（uA）Tj=25℃max

Mfr

Package

Product Status

Ptot(W),Tc=110℃

Ptot(W),Tc=25℃

Qc(nC),TJ=25℃

Rad Hardened

VF（V）Tj=175℃max

VF（V）Tj=175℃typ

VF（V）Tj=25℃ typ

VF（V）Tj=25℃max

Vrrm(V)

Series

Speed

Diode Type

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Operating Temperature - Junction

Voltage - DC Reverse (Vr) (Max)

Current - Average Rectified (Io)

Capacitance @ Vr, F

Reverse Recovery Time (trr)

G3S12015H
G3S12015H

Global Power

In Stock

-

-

Through Hole

TO-220-2 Full Pack

TO-220F

-

-

-

-

-

-

-

-

-

-

-

Global Power Technology-GPT

Cut Tape (CT);Tape & Box (TB);

Active

-

-

-

-

-

-

-

-

-

-

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

50 µA @ 1200 V

1.7 V @ 15 A

-55°C ~ 175°C

1200 V

21A

1700pF @ 0V, 1MHz

0 ns

G3S06550P
G3S06550P

Global Power

In Stock

-

-

Through Hole

TO-247-2

TO-247AC

-

-

-

-

-

-

-

-

-

-

-

Global Power Technology-GPT

Cut Tape (CT);Tape & Box (TB);

Active

-

-

-

No

-

-

-

-

-

-

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

100 µA @ 650 V

1.7 V @ 50 A

-55°C ~ 175°C

650 V

105A

4400pF @ 0V, 1MHz

0 ns

G3S06505C
G3S06505C

Global Power

10000

-

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

TO-252

-

-

-

-

-

-

-

-

-

-

-

Global Power Technology-GPT

Cut Tape (CT);Tape & Box (TB);

Active

-

-

-

-

-

-

-

-

-

-

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

50 µA @ 650 V

1.7 V @ 5 A

-55°C ~ 175°C

650 V

22.6A

424pF @ 0V, 1MHz

0 ns

G3S065100P
G3S065100P

Global Power

In Stock

-

-

Through Hole

TO-247-2

TO-247AC

-

-

-

-

-

-

-

-

-

-

-

Global Power Technology-GPT

Cut Tape (CT);Tape & Box (TB);

Active

-

-

-

No

-

-

-

-

-

-

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

50 µA @ 650 V

1.7 V @ 40 A

-55°C ~ 175°C

650 V

20A

13500pF @ 0V, 1MHz

0 ns

G3S12002C
G3S12002C

Global Power

In Stock

-

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

TO-252

-

-

-

-

-

-

-

-

-

-

-

Global Power Technology-GPT

Cut Tape (CT);Tape & Box (TB);

Active

-

-

-

No

-

-

-

-

-

-

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

50 µA @ 1200 V

1.7 V @ 2 A

-55°C ~ 175°C

1200 V

8.8A

170pF @ 0V, 1MHz

0 ns

G3S06520P
G3S06520P

Global Power

10000

-

-

Through Hole

TO-247-2

TO-247AC

-

-

-

-

-

-

-

-

-

-

-

Global Power Technology-GPT

Cut Tape (CT);Tape & Box (TB);

Active

-

-

-

-

-

-

-

-

-

-

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

50 µA @ 650 V

1.7 V @ 20 A

-55°C ~ 175°C

650 V

60A

1170pF @ 0V, 1MHz

0 ns

G4S06515PT
G4S06515PT

Global Power Technology-GPT

In Stock

-

-

Through Hole

TO-247-2

TO-247AC

-

21

39

-

15（145°C）

-

130

100

1.4

0.5

50

Global Power Technology-GPT

TO-247AC-2L

Active

-

-

-

-

2.5

2

1.5

1.7

-

-

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

50 μA @ 650 V

1.7 V @ 15 A

-55°C ~ 175°C

650 V

39A

645pF @ 0V, 1MHz

0 ns

G5S06510CT
G5S06510CT

Global Power Technology-GPT

In Stock

-

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

TO-252

-

-

-

-

-

-

-

-

-

-

-

Global Power Technology-GPT

Tape & Box (TB)

Active

-

-

-

-

-

-

-

-

-

-

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

50 μA @ 650 V

1.5 V @ 10 A

-55°C ~ 175°C

650 V

35.8A

645pF @ 0V, 1MHz

0 ns

GAS06520A
GAS06520A

Global Power Technology-GPT

In Stock

-

-

Through Hole

TO-220-2

TO-220AC

Single

-

-

26(135℃)

20(148.5℃)

57.3

180

-

-

-

-

Global Power Technology-GPT

Tape & Box (TB)

Active

79

183

66（VR=400V）

-

-

-

-

-

650

-

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

50 μA @ 650 V

1.7 V @ 20 A

-55°C ~ 175°C

650 V

66A

1390pF @ 0V, 1MHz

0 ns

G4S12020PM
G4S12020PM

Global Power Technology-GPT

In Stock

-

-

Through Hole

TO-247-2

TO-247AC

-

-

-

-

-

-

-

-

-

-

-

Global Power Technology-GPT

Tape & Box (TB)

Active

-

-

-

-

-

-

-

-

-

-

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

30 μA @ 1700 V

1.6 V @ 20 A

-55°C ~ 175°C

1200 V

64.5A

2600pF @ 0V, 1MHz

0 ns

G5S06504AT
G5S06504AT

Global Power Technology-GPT

In Stock

-

-

Through Hole

TO-220-2

TO-220AC

-

-

-

-

-

-

-

-

-

-

-

Global Power Technology-GPT

Tape & Box (TB)

Active

-

-

-

-

-

-

-

-

-

-

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

50 μA @ 650 V

1.6 V @ 4 A

-55°C ~ 175°C

650 V

11.6A

181pF @ 0V, 1MHz

0 ns

G3S12003C
G3S12003C

Global Power Technology-GPT

In Stock

-

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

TO-252

-

-

-

-

-

-

-

-

-

-

-

Global Power Technology-GPT

Tape & Box (TB)

Active

-

-

-

-

-

-

-

-

-

-

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

100 μA @ 1200 V

1.7 V @ 3 A

-55°C ~ 175°C

1200 V

12A

260pF @ 0V, 1MHz

0 ns

G5S06506HT
G5S06506HT

Global Power Technology-GPT

In Stock

-

-

Through Hole

TO-220-2 Full Pack

TO-220F

-

-

-

-

-

-

-

-

-

-

-

Global Power Technology-GPT

Tape & Box (TB)

Active

-

-

-

-

-

-

-

-

-

-

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

50 μA @ 650 V

1.5 V @ 6 A

-55°C ~ 175°C

650 V

18.5A

395pF @ 0V, 1MHz

0 ns

G5S06502AT
G5S06502AT

Global Power Technology-GPT

In Stock

-

-

Through Hole

TO-220-2

TO-220AC

-

-

-

-

-

-

-

-

-

-

-

Global Power Technology-GPT

Tape & Box (TB)

Active

-

-

-

-

-

-

-

-

-

-

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

50 μA @ 650 V

1.5 V @ 2 A

-55°C ~ 175°C

650 V

9.6A

124pF @ 0V, 1MHz

0 ns

G5S06505CT
G5S06505CT

Global Power Technology-GPT

In Stock

-

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

TO-252

-

-

-

-

-

-

-

-

-

-

-

Global Power Technology-GPT

Tape & Box (TB)

Active

-

-

-

-

-

-

-

-

-

-

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

50 μA @ 650 V

1.5 V @ 5 A

-55°C ~ 175°C

650 V

24A

395pF @ 0V, 1MHz

0 ns

G5S12020H
G5S12020H

Global Power Technology-GPT

In Stock

-

-

Through Hole

TO-220-2 Full Pack

TO-220F

-

-

-

-

-

-

-

-

-

-

-

Global Power Technology-GPT

Tape & Box (TB)

Active

-

-

-

-

-

-

-

-

-

-

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

50 μA @ 1200 V

1.7 V @ 20 A

-55°C ~ 175°C

1200 V

24.6A

1320pF @ 0V, 1MHz

0 ns

G4S06515AT
G4S06515AT

Global Power Technology-GPT

In Stock

-

-

Through Hole

TO-220-2

TO-220AC

-

-

-

-

-

-

-

-

-

-

-

Global Power Technology-GPT

Tape & Box (TB)

Active

-

-

-

-

-

-

-

-

-

-

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

50 μA @ 650 V

1.7 V @ 15 A

-55°C ~ 175°C

650 V

36A

645pF @ 0V, 1MHz

0 ns

G5S12002H
G5S12002H

Global Power Technology-GPT

In Stock

-

-

Through Hole

TO-220-2 Full Pack

TO-220F

Single

-

-

3.7(135℃)

2(160.5℃)

7.9

30

-

-

-

-

Global Power Technology-GPT

Tape & Box (TB)

Active

16

38

12（VR=800V）

-

-

-

-

-

1200

-

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

50 μA @ 1200 V

1.7 V @ 2 A

-55°C ~ 175°C

1200 V

7.5A

170pF @ 0V, 1MHz

0 ns

G3S17005C
G3S17005C

Global Power Technology-GPT

100000

-

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

TO-252

-

-

-

-

-

-

-

-

-

-

-

Global Power Technology-GPT

Tape & Box (TB)

Active

-

-

-

-

-

-

-

-

-

-

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

50 μA @ 1700 V

1.7 V @ 5 A

-55°C ~ 175°C

1700 V

27A

780pF @ 0V, 1MHz

0 ns

G3S06520B
G3S06520B

Global Power Technology-GPT

80

-

-

Through Hole

TO-247-3

TO-247AB

-

17.4

32.8

-

10

-

120

100

1.4

0.5

50

Global Power Technology-GPT

TO-247AB-3L

Active

-

-

-

-

2

1.64

1.43

1.7

-

-

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

50 μA @ 650 V

1.7 V @ 10 A

-55°C ~ 175°C

650 V

40A

690pF @ 0V, 1MHz

0 ns

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