- Series
- Diode Type
- Mounting Type
- Operating Temperature - Junction
- Package / Case
- Speed
- Supplier Device Package
- Voltage - DC Reverse (Vr) (Max)
- Current - Reverse Leakage @ Vr
- Voltage - Forward (Vf) (Max) @ If
- Reverse Recovery Time (trr)
- Mfr
Attribute column
Manufacturer
Global Power Diodes - Rectifiers - Single
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Mounting Type | Package / Case | Supplier Device Package | Config. | IF(A),Tc=125℃ | IF(A),Tc=160℃ | IF(A),Tc=25℃ | Ifsm(A),Tc=25℃ | Lead Free Status / RoHS Status | Mfr | Package | Product Status | Ptot(W),Tc=110℃ | Ptot(W),Tc=25℃ | Qc(nC),TJ=25℃ | Vrrm(V) | Packaging | Series | Part Status | Speed | Diode Type | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Capacitance @ Vr, F | Reverse Recovery Time (trr) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 G3S12005C Global Power Technology-GPT | In Stock | - | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | - | - | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 1200 V | 1.7 V @ 5 A | -55°C ~ 175°C | 1200 V | 34A | 475pF @ 0V, 1MHz | 0 ns | ||
 GAS06520P Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-247-2 | TO-247AC | Single | 27.5(135℃) | 20（150.5℃） | 60.3 | 180 | - | Global Power Technology-GPT | Tape & Box (TB) | Active | 87 | 200 | 66（VR=400V） | 650 | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | 1.7 V @ 20 A | -55°C ~ 175°C | 650 V | 66.5A | 1390pF @ 0V, 1MHz | 0 ns | ||
G3S12010D Global Power Technology-GPT | In Stock | - | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263 | - | - | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 1200 V | 1.7 V @ 10 A | -55°C ~ 175°C | 1200 V | 33.2A | 765pF @ 0V, 1MHz | 0 ns | ||
G5S06505DT Global Power Technology-GPT | In Stock | - | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263 | - | - | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | 1.5 V @ 5 A | -55°C ~ 175°C | 650 V | 24A | 395pF @ 0V, 1MHz | 0 ns | ||
G4S06506CT Global Power | In Stock | - | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | - | - | - | - | - | -- | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | - | - | * | Active | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 650 V | 1.8 V @ 6 A | -55°C ~ 175°C | 650 V | 13.8A | 181pF @ 0V, 1MHz | 0 ns | ||
G4S12010PM Global Power | 100000 | - | - | Through Hole | TO-247-2 | TO-247AC | - | - | - | - | - | -- | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | - | - | * | Active | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 30 µA @ 1700 V | - | -55°C ~ 175°C | 1200 V | 33.2A | - | 0 ns | ||
G5S12005A Global Power | 100000 | - | - | Through Hole | TO-220-2 | TO-220AC | - | - | - | - | - | -- | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | - | - | * | Active | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 1200 V | 1.7 V @ 5 A | -55°C ~ 175°C | 1200 V | 20.5A | 424pF @ 0V, 1MHz | 0 ns | ||
G5S12015PM Global Power | In Stock | - | - | Through Hole | TO-247-2 | TO-247AC | - | - | - | - | - | -- | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | - | - | * | Active | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 1200 V | 1.7 V @ 15 A | -55°C ~ 175°C | 1200 V | 55A | 1370pF @ 0V, 1MHz | 0 ns | ||
G51YT Global Power | 100000 | - | - | - | - | - | Single | - | 1（157℃） | 3.53 | 12 | - | - | - | - | 7 | 16 | 3.1（VR=400V） | 650 | - | - | - | - | - | - | - | - | - | - | - | - | ||
G3S06504G Global Power | In Stock | - | - | - | - | - | Double 3L | 4.7（135℃） | 4（144℃） | 10.1 | 32 | - | - | - | - | 16 | 38 | 10（VR=400V） | 650 | - | - | - | - | - | - | - | - | - | - | - | - | ||
 G4H06510AT Global Power | In Stock | - | - | - | - | - | Single | 11.3（135℃） | 10 （142.5°C） | 24 | 70 | - | - | - | - | 43 | 100 | 18（VR=400V） | 650 | - | - | - | - | - | - | - | - | - | - | - | - | ||
 G4H06510DT Global Power | In Stock | - | - | - | - | - | Single | 11.5（135℃） | 10 （143°C） | 24.4 | 70 | - | - | - | - | 45 | 103 | 18（VR=400V） | 650 | - | - | - | - | - | - | - | - | - | - | - | - | ||
 G5S06520BT Global Power | In Stock | - | - | - | - | - | Double | 16.9*（135℃） | 10*（158℃） | - | - | - | - | - | - | - | - | 32（VR=400V） | 650 | - | - | - | - | - | - | - | - | - | - | - | - | ||
 G5S12002R Global Power | In Stock | - | - | - | - | - | Single | 4.6(135℃) | 2(165℃) | 9.6 | 30 | - | - | - | - | 24 | 55 | 12（VR=800V） | 1200 | - | - | - | - | - | - | - | - | - | - | - | - | ||
G5S12008PMT Global Power | 100000 | - | - | - | - | - | Single | 10.8(135℃) | 8（151℃） | 22.5 | 80 | - | - | - | - | 50 | 115 | 29（VR=800V） | 1200 | - | - | - | - | - | - | - | - | - | - | - | - | ||
G5S12020U Global Power | In Stock | - | - | - | - | - | Single | 25.3（135℃） | 20（148℃） | 53.6 | 230 | - | - | - | - | 96 | 221 | 103（VR=800V） | 1200 | - | - | - | - | - | - | - | - | - | - | - | - | ||
G5S12020PM Global Power | In Stock | - | - | - | - | - | Single | 26.5（135℃） | 20（150℃） | 55.9 | 220 | - | - | - | - | 103 | 238 | 103（VR=800V） | 1200 | - | - | - | - | - | - | - | - | - | - | - | - | ||
G3S06510P Global Power | In Stock | - | - | Through Hole | TO-247-2 | TO-247AC | - | - | - | - | - | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 650 V | 1.7 V @ 10 A | -55°C ~ 175°C | 650 V | 32.8A | 690pF @ 0V, 1MHz | 0 ns | ||
GP2D020A065B Global Power | In Stock | - | - | Through Hole | TO-247-2 | TO-247-2 | - | - | - | - | - | - | - | - | - | - | - | - | - | Tube | Amp+™ | Active | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 200µA @ 650V | 1.65V @ 20A | -55°C ~ 175°C | 650V | 58A (DC) | 1054pF @ 1V, 1MHz | - | ||
GP3D030A060B Global Power | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |