- Series
- Diode Type
- Mounting Type
- Operating Temperature - Junction
- Package / Case
- Speed
- Supplier Device Package
- Voltage - DC Reverse (Vr) (Max)
- Current - Reverse Leakage @ Vr
- Voltage - Forward (Vf) (Max) @ If
- Reverse Recovery Time (trr)
- Mfr
Attribute column
Manufacturer
Global Power Diodes - Rectifiers - Single
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Mounting Type | Package / Case | Supplier Device Package | Current - Average Rectified (Io) (per Diode) | Mfr | Package | Product Status | Rad Hardened | Packaging | Series | Part Status | Applications | Power (Watts) | Efficiency | Current - Output (Max) | Speed | Diode Type | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Input Type | Voltage - Output | Operating Temperature - Junction | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Capacitance @ Vr, F | Form | Output Connector | Diode Configuration | Reverse Recovery Time (trr) |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() G3S12002H Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-220-2 Full Pack | TO-220F | - | Global Power Technology-GPT | Tape & Box (TB) | Active | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 1200 V | 1.7 V @ 2 A | - | - | -55°C ~ 175°C | 1200 V | 7.3A | 136pF @ 0V, 1MHz | - | - | - | 0 ns | ||
![]() G3S065100P Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-247-2 | TO-247AC | - | Global Power Technology-GPT | Tape & Box (TB) | Active | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | 1.7 V @ 40 A | - | - | -55°C ~ 175°C | 650 V | 20A | 13500pF @ 0V, 1MHz | - | - | - | 0 ns | ||
![]() G3S12005A Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-220-2 | TO-220AC | - | Global Power Technology-GPT | Tape & Box (TB) | Active | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 1200 V | 1.7 V @ 5 A | - | - | -55°C ~ 175°C | 1200 V | 22A | 475pF @ 0V, 1MHz | - | - | - | 0 ns | ||
![]() G3S06520H Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-220-2 Full Pack | TO-220F | - | Global Power Technology-GPT | Tape & Box (TB) | Active | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | 1.7 V @ 20 A | - | - | -55°C ~ 175°C | 650 V | 26A | 1170pF @ 0V, 1MHz | - | - | - | 0 ns | ||
![]() GP2D024A060B Global Power | In Stock | - | - | Through Hole | TO-247-2 | TO-247-2 | - | - | - | - | - | Tube | Amp+™ | Active | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 80µA @ 600V | 1.65V @ 24A | - | - | -55°C ~ 175°C | 600V | 68A (DC) | 1265pF @ 1V, 1MHz | - | - | - | - | ||
![]() G3S06510P Global Power | In Stock | - | - | Through Hole | TO-247-2 | TO-247AC | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 650 V | 1.7 V @ 10 A | - | - | -55°C ~ 175°C | 650 V | 32.8A | 690pF @ 0V, 1MHz | - | - | - | 0 ns | ||
![]() GP2D010A065A Global Power | 10 | - | - | Through Hole | TO-220-2 | TO-220-2 | - | - | - | - | - | Tube | Amp+™ | Active | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 100µA @ 650V | 1.65V @ 10A | - | - | -55°C ~ 175°C | 650V | 30A (DC) | 527pF @ 1V, 1MHz | - | - | - | - | ||
![]() G3S06008J Global Power | In Stock | - | - | - | - | - | - | Global Power Technology Co. Ltd | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
![]() G3S06540B Global Power | In Stock | - | - | Through Hole | TO-247-3 | TO-247AB | 60A (DC) | AUTEC POWER SYSTEMS | Case | Active | - | - | DT090A (84W) | - | ITE (Commercial) | 84 W | Level VI | 7A | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 650 V | 1.7 V @ 20 A | IEC 320-C18 | 12V | -55°C ~ 175°C | 650 V | - | - | Desktop | USB | 1 Pair Common Cathode | 0 ns | ||
![]() G3S12010C Global Power | In Stock | - | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 1200 V | 1.7 V @ 10 A | - | - | -55°C ~ 175°C | 1200 V | 33.2A | 765pF @ 0V, 1MHz | - | - | - | 0 ns | ||
![]() G3S17005A Global Power | In Stock | - | - | Through Hole | TO-220-2 | TO-220AC | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | No | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 1700 V | 1.7 V @ 5 A | - | - | -55°C ~ 175°C | 1700 V | 28A | 800pF @ 0V, 1MHz | - | - | - | 0 ns | ||
![]() G5S12008C Global Power | In Stock | - | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 1200 V | 1.7 V @ 8 A | - | - | -55°C ~ 175°C | 1200 V | 28.9A | 550pF @ 0V, 1MHz | - | - | - | 0 ns | ||
![]() G3S12005D Global Power | In Stock | - | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 1200 V | 1.7 V @ 5 A | - | - | -55°C ~ 175°C | 1200 V | 34A | 475pF @ 0V, 1MHz | - | - | - | 0 ns | ||
![]() G5S12015A Global Power | In Stock | - | - | Through Hole | TO-220-2 | TO-220AC | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 1200 V | 1.7 V @ 15 A | - | - | -55°C ~ 175°C | 1200 V | 53A | 1370pF @ 0V, 1MHz | - | - | - | 0 ns | ||
![]() G5S12005C Global Power | In Stock | - | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 1200 V | 1.7 V @ 5 A | - | - | -55°C ~ 175°C | 1200 V | 20.95A | 424pF @ 0V, 1MHz | - | - | - | 0 ns | ||
![]() G5S06502AT Global Power | In Stock | - | - | Through Hole | TO-220-2 | TO-220AC | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 650 V | 1.5 V @ 2 A | - | - | -55°C ~ 175°C | 650 V | 9.6A | 124pF @ 0V, 1MHz | - | - | - | 0 ns | ||
![]() G3S06510M Global Power | 100000 | - | - | Through Hole | TO-220-2 Full Pack | TO-220F | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 650 V | 1.7 V @ 10 A | - | - | -55°C ~ 175°C | 650 V | 21A | 690pF @ 0V, 1MHz | - | - | - | 0 ns | ||
![]() G52YT Global Power | In Stock | - | - | Surface Mount | DO-214AC, SMA | SMA | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 650 V | 1.7 V @ 2 A | - | - | -55°C ~ 175°C | 650 V | 5.8A | 116.75pF @ 0V, 1MHz | - | - | - | 0 ns | ||
![]() G5S06508DT Global Power | In Stock | - | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 650 V | 1.5 V @ 8 A | - | - | -55°C ~ 175°C | 650 V | 32A | 550pF @ 0V, 1MHz | - | - | - | 0 ns | ||
![]() G4S06506HT Global Power | In Stock | - | - | Through Hole | TO-220-2 Full Pack | TO-220F | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 650 V | 1.8 V @ 6 A | - | - | -55°C ~ 175°C | 650 V | 9.7A | 181pF @ 0V, 1MHz | - | - | - | 0 ns |