- Series
- Diode Type
- Mounting Type
- Operating Temperature - Junction
- Package / Case
- Speed
- Supplier Device Package
- Voltage - DC Reverse (Vr) (Max)
- Current - Reverse Leakage @ Vr
- Voltage - Forward (Vf) (Max) @ If
- Reverse Recovery Time (trr)
- Mfr
Attribute column
Manufacturer
Global Power Diodes - Rectifiers - Single
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Mounting Type | Package / Case | Supplier Device Package | Config. | IF(A) Tc=125℃ | IF(A) Tc=25℃ | IF(A),Tc=125℃ | IF(A),Tc=160℃ | IF(A),Tc=25℃ | Ifsm(A),Tc=25℃ | IR（uA）Tj=175℃max | IR（uA）Tj=175℃typ | IR（uA）Tj=25℃ typ | IR（uA）Tj=25℃max | Mfr | Package | Product Status | Ptot(W),Tc=110℃ | Ptot(W),Tc=25℃ | Qc(nC),TJ=25℃ | VF（V）Tj=175℃max | VF（V）Tj=175℃typ | VF（V）Tj=25℃ typ | VF（V）Tj=25℃max | Vrrm(V) | Series | Speed | Diode Type | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Capacitance @ Vr, F | Reverse Recovery Time (trr) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 G3S06505D Global Power Technology-GPT | In Stock | - | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263 | - | - | - | - | - | - | - | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | - | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | 1.7 V @ 5 A | -55°C ~ 175°C | 650 V | 22.6A | 424pF @ 0V, 1MHz | 0 ns | ||
 G5S12015PM Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-247-2 | TO-247AC | Single | - | - | 20.3（135℃） | 15(150.5℃) | 42.9 | 165 | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | 78 | 181 | 80（VR=800V） | - | - | - | - | 1200 | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 1200 V | 1.7 V @ 15 A | -55°C ~ 175°C | 1200 V | 55A | 1370pF @ 0V, 1MHz | 0 ns | ||
G3S12015P Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-247-2 | TO-247AC | - | - | - | - | - | - | - | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | - | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 1200 V | 1.7 V @ 15 A | -55°C ~ 175°C | 1200 V | 42A | 1379pF @ 0V, 1MHz | 0 ns | ||
G5S12010D Global Power Technology-GPT | In Stock | - | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263 | Single | - | - | 13.7(135℃) | 10(151℃) | 29.2 | 120 | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | 52 | 120 | 55（VR=800V） | - | - | - | - | 1200 | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 1200 V | 1.7 V @ 10 A | -55°C ~ 175°C | 1200 V | 30.9A | 825pF @ 0V, 1MHz | 0 ns | ||
 G5S6504Z Global Power Technology-GPT | In Stock | - | - | Surface Mount | 8-PowerTDFN | 8-DFN (4.9x5.75) | Single | - | - | 5.7(135℃) | 4（152℃） | 12 | 24 | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | 22 | 52 | 10（VR=400V） | - | - | - | - | 650 | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | 1.6 V @ 4 A | -55°C ~ 175°C | 650 V | 15.45A | 181pF @ 0V, 1MHz | 0 ns | ||
 G3S06520A Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-220-2 | TO-220AC | Single | - | - | 21.7(135℃) | 20（140℃) | 47.7 | 150 | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | 68 | 156 | 51（VR=400V） | - | - | - | - | 650 | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | 1.7 V @ 20 A | -55°C ~ 175°C | 650 V | 56.5A | 1170pF @ 0V, 1MHz | 0 ns | ||
G5S12008PM Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-247-2 | TO-247AC | Single | - | - | - | 8（157.5℃） | 27.3 | 96 | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | 59 | 136 | 38（VR=800V） | - | - | - | - | 1200 | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 1200 V | 1.7 V @ 8 A | -55°C ~ 175°C | 1200 V | 27.9A | 550pF @ 0V, 1MHz | 0 ns | ||
G5S06508HT Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-220-2 Full Pack | TO-220F | - | - | - | - | - | - | - | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | - | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | 1.5 V @ 8 A | -55°C ~ 175°C | 650 V | 20A | 550pF @ 0V, 1MHz | 0 ns | ||
G4S06510AT Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-220-2 | TO-220AC | - | - | - | - | - | - | - | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | - | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | 1.7 V @ 10 A | -55°C ~ 175°C | 650 V | 30.5A | 550pF @ 0V, 1MHz | 0 ns | ||
GAS06520L Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-247-3 | TO-247AB | - | - | - | - | - | - | - | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | - | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | 1.7 V @ 20 A | -55°C ~ 175°C | 650 V | 66.5A | 1390pF @ 0V, 1MHz | 0 ns | ||
G5S06506AT Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-220-2 | TO-220AC | - | 13.2 | 24.5 | - | 6 | - | 90 | 100 | 2.5 | 0.2 | 50 | Global Power Technology-GPT | T0-220AC | Active | - | - | - | 1.8 | 1.6 | 1.3 | 1.5 | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | 1.5 V @ 6 A | -55°C ~ 175°C | 650 V | 24.5A | 395pF @ 0V, 1MHz | 0 ns | ||
G3S12015L Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-247-3 | TO-247AB | - | - | - | - | - | - | - | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | - | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 1200 V | 1.7 V @ 15 A | -55°C ~ 175°C | 1200 V | 55A | 1700pF @ 0V, 1MHz | 0 ns | ||
G5S06510DT Global Power Technology-GPT | In Stock | - | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263 | - | - | - | - | - | - | - | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | - | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | 1.5 V @ 10 A | -55°C ~ 175°C | 650 V | 38A | 645pF @ 0V, 1MHz | 0 ns | ||
G4S06506HT Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-220-2 Full Pack | TO-220F | - | - | - | - | - | - | - | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | - | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | 1.8 V @ 6 A | -55°C ~ 175°C | 650 V | 9.7A | 181pF @ 0V, 1MHz | 0 ns | ||
G3S06502D Global Power Technology-GPT | In Stock | - | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263 | - | - | - | - | - | - | - | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | - | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | 1.7 V @ 2 A | -55°C ~ 175°C | 650 V | 9A | 123pF @ 0V, 1MHz | 0 ns | ||
GAS06520D Global Power Technology-GPT | 59 |
| - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263 | Single | - | - | 29.8(135℃) | 20(153.5℃) | 64.8 | 180 | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | 98 | 227 | 66（VR=400V） | - | - | - | - | 650 | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | 1.7 V @ 20 A | -55°C ~ 175°C | 650 V | 79.5A | 1390pF @ 0V, 1MHz | 0 ns | ||
G5S12010A Global Power Technology-GPT | 12000 | - | - | Through Hole | TO-220-2 | TO-220AC | Single | - | - | 15.7(135℃) | 10(156℃) | 33 | 120 | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | 65 | 150 | 55（VR=800V） | - | - | - | - | 1200 | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 1200 V | - | -55°C ~ 175°C | 1200 V | 37A | - | 0 ns | ||
G4S12020D Global Power Technology-GPT | In Stock | - | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263 | - | - | - | - | - | - | - | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | - | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 1200 V | 1.7 V @ 20 A | -55°C ~ 175°C | 1200 V | 75A | 2600pF @ 0V, 1MHz | 0 ns | ||
G5S06504QT Global Power Technology-GPT | In Stock | - | - | Surface Mount | 4-PowerTSFN | 4-DFN (8x8) | - | - | - | - | - | - | - | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | - | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | 1.55 V @ 4 A | -55°C ~ 175°C | 650 V | 14A | 181pF @ 0V, 1MHz | 0 ns | ||
G5S12020PM Global Power Technology-GPT | In Stock | - | - | Through Hole | TO-247-2 | TO-247AC | - | - | - | - | - | - | - | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | Active | - | - | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 1200 V | 1.7 V @ 20 A | -55°C ~ 175°C | 1200 V | 62A | 1320pF @ 0V, 1MHz | 0 ns |