Filters
  • Series
  • Diode Type
  • Mounting Type
  • Operating Temperature - Junction
  • Package / Case
  • Speed
  • Supplier Device Package
  • Voltage - DC Reverse (Vr) (Max)
  • Current - Reverse Leakage @ Vr
  • Voltage - Forward (Vf) (Max) @ If
  • Reverse Recovery Time (trr)
  • Mfr

Attribute column

Manufacturer

Global Power Diodes - Rectifiers - Single

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422 Results

Product

Inventory

Pricing(USD)

Quantity

Datasheet

RoHS

Mounting Type

Package / Case

Supplier Device Package

Config.

Current - Average Rectified (Io) (per Diode)

IF(A),Tc=125℃

IF(A),Tc=160℃

IF(A),Tc=25℃

Ifsm(A),Tc=25℃

Lead Free Status / RoHS Status

Mfr

Package

Product Status

Ptot(W),Tc=110℃

Ptot(W),Tc=25℃

Qc(nC),TJ=25℃

Vrrm(V)

Packaging

Series

Part Status

Speed

Diode Type

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Operating Temperature - Junction

Voltage - DC Reverse (Vr) (Max)

Current - Average Rectified (Io)

Capacitance @ Vr, F

Diode Configuration

Reverse Recovery Time (trr)

G3S06550A
G3S06550A

Global Power

100000

-

-

-

-

-

Single

-

62.9(135℃)

50(147℃)

136.6

380

-

-

-

-

210

484

158(VR=400V)

650

-

-

-

-

-

-

-

-

-

-

-

-

-

G4S06515LT
G4S06515LT

Global Power

In Stock

-

-

-

-

-

Single

-

16.3(135℃)

15 (140.5℃)

34.6

120

-

-

-

-

60

139

32(VR=400V)

650

-

-

-

-

-

-

-

-

-

-

-

-

-

G5S12001CT
G5S12001CT

Global Power

In Stock

-

-

-

-

-

Single

-

2.2(135℃)

1(164.5℃)

4.5

15

-

-

-

-

12

28

5.6(VR=800V)

1200

-

-

-

-

-

-

-

-

-

-

-

-

-

G5S12016BMT
G5S12016BMT

Global Power

100000

-

-

-

-

-

Double

-

10*(135℃)

8*(148℃)

-

-

-

-

-

-

-

-

29(VR=800V)

1200

-

-

-

-

-

-

-

-

-

-

-

-

-

G5S12020PMT
G5S12020PMT

Global Power

100000

-

-

-

-

-

Single

-

26.1(135℃)

20(149.5℃)

54.5

180

-

-

-

-

114

263

80(VR=800V)

1200

-

-

-

-

-

-

-

-

-

-

-

-

-

G5S12050PPMT
G5S12050PPMT

Global Power

100000

-

-

-

-

-

Double

-

69(135℃)

50(152℃)

144.8

440

-

-

-

-

296

682

206(VR=800V)

1200

-

-

-

-

-

-

-

-

-

-

-

-

-

G3S17050PM
G3S17050PM

Global Power

100000

-

-

-

-

-

Single

-

67.2(135℃)

50(151℃)

139.6

370

-

-

-

-

325

750

420(VR=1200V)

1700

-

-

-

-

-

-

-

-

-

-

-

-

-

G3S06510D
G3S06510D

Global Power Technology-GPT

In Stock

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263

Single

-

15.2(135℃)

10(154℃)

32.8

100

-

Global Power Technology-GPT

Tape & Box (TB)

Active

52

120

32(VR=400V)

650

-

-

-

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

50 μA @ 650 V

1.7 V @ 10 A

-55°C ~ 175°C

650 V

34A

690pF @ 0V, 1MHz

-

0 ns

G4S06516BT
G4S06516BT

Global Power Technology-GPT

In Stock

-

-

Through Hole

TO-247-3

TO-247AB

Double

25.9A (DC)

12*(135℃)

8*(154.5℃)

-

-

-

Global Power Technology-GPT

Tape & Box (TB)

Active

-

-

21(VR=400V)

650

-

-

-

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

50 μA @ 650 V

1.7 V @ 8 A

-55°C ~ 175°C

650 V

-

-

1 Pair Common Cathode

0 ns

G4S06508DT
G4S06508DT

Global Power Technology-GPT

In Stock

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263

Single

-

11.3(135℃)

8(152℃)

24.1

60

-

Global Power Technology-GPT

Tape & Box (TB)

Active

43

100

21(VR=400V)

650

-

-

-

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

50 μA @ 650 V

1.7 V @ 8 A

-55°C ~ 175°C

650 V

24A

395pF @ 0V, 1MHz

-

0 ns

G3S12020P
G3S12020P

Global Power Technology-GPT

In Stock

-

-

Through Hole

TO-247-2

TO-247AC

-

-

-

-

-

-

-

Global Power Technology-GPT

Tape & Box (TB)

Active

-

-

-

-

-

-

-

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

50 μA @ 1200 V

1.7 V @ 20 A

-55°C ~ 175°C

1200 V

64.5A

2600pF @ 0V, 1MHz

-

0 ns

G5S12008A
G5S12008A

Global Power Technology-GPT

In Stock

-

-

Through Hole

TO-220-2

TO-220AC

Single

-

11.5(135℃)

8(153℃)

24.2

96

-

Global Power Technology-GPT

Tape & Box (TB)

Active

47

109

38(VR=800V)

1200

-

-

-

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

50 μA @ 1200 V

1.7 V @ 8 A

-55°C ~ 175°C

1200 V

24.8A

550pF @ 0V, 1MHz

-

0 ns

G5S12010PM
G5S12010PM

Global Power

In Stock

-

-

Through Hole

TO-247-2

TO-247AC

-

-

-

-

-

-

--

Global Power Technology-GPT

Cut Tape (CT);Tape & Box (TB);

Active

-

-

-

-

-

*

Active

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

50 µA @ 1200 V

1.7 V @ 10 A

-55°C ~ 175°C

1200 V

33A

825pF @ 0V, 1MHz

-

0 ns

GP2D015A120A
GP2D015A120A

Global Power

In Stock

-

-

Through Hole

TO-220-2

TO-220-2

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Tube

Amp+™

Active

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

30µA @ 1200V

1.8V @ 15A

-55°C ~ 175°C

1200V

50A (DC)

952pF @ 1V, 1MHz

-

-

G53YT
G53YT

Global Power

100000

-

-

-

-

-

Single

-

6.7 (135°C)

3 (164°C)

13.9

40

-

-

-

-

30

68

10(VR=400V)

650

-

-

-

-

-

-

-

-

-

-

-

-

-

G3S06504R
G3S06504R

Global Power

100000

-

-

-

-

-

Single

-

5.6(135℃)

4(152℃)

11.9

32

-

-

-

-

22

51

10(VR=400V)

650

-

-

-

-

-

-

-

-

-

-

-

-

-

GAS06520U
GAS06520U

Global Power

In Stock

-

-

-

-

-

Single

-

33.7(135℃)

20(157.5℃)

72.4

180

-

-

-

-

120

278

66(VR=400V)

650

-

-

-

-

-

-

-

-

-

-

-

-

-

G3S06530PM
G3S06530PM

Global Power

In Stock

-

-

-

-

-

Single

-

35.8(135℃)

30(144.5℃)

78.9

260

-

-

-

-

108

250

99(VR=400V)

650

-

-

-

-

-

-

-

-

-

-

-

-

-

G3S06550PM
G3S06550PM

Global Power

In Stock

-

-

-

-

-

Single

-

58.3(135℃)

50(143.5℃)

127.6

360

-

-

-

-

186

429

158(VR=400V)

650

-

-

-

-

-

-

-

-

-

-

-

-

-

G5S12010PMT
G5S12010PMT

Global Power

In Stock

-

-

-

-

-

Single

-

13.1(135℃)

10(149.5℃)

27.3

100

-

-

-

-

59

136

39(VR=800V)

1200

-

-

-

-

-

-

-

-

-

-

-

-

-