- Series
- Diode Type
- Mounting Type
- Operating Temperature - Junction
- Package / Case
- Speed
- Supplier Device Package
- Voltage - DC Reverse (Vr) (Max)
- Current - Reverse Leakage @ Vr
- Voltage - Forward (Vf) (Max) @ If
- Reverse Recovery Time (trr)
- Mfr
Attribute column
Manufacturer
Global Power Diodes - Rectifiers - Single
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Mounting Type | Package / Case | Supplier Device Package | Mfr | Package | Product Status | Rad Hardened | RoHS | Series | Speed | Diode Type | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Capacitance @ Vr, F | Reverse Recovery Time (trr) |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() G3S06508H Global Power | 4980 | - | - | Through Hole | TO-220-2 Full Pack | TO-220F | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 650 V | 1.7 V @ 8 A | -55°C ~ 175°C | 650 V | 14A | 550pF @ 0V, 1MHz | 0 ns | ||
![]() G3S06508D Global Power | 100000 | - | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | No | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 650 V | 1.7 V @ 8 A | -55°C ~ 175°C | 650 V | 25.5A | 550pF @ 0V, 1MHz | 0 ns | ||
![]() G3S12010D Global Power | 52388 | - | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | No | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 1200 V | 1.7 V @ 10 A | -55°C ~ 175°C | 1200 V | 33.2A | 765pF @ 0V, 1MHz | 0 ns | ||
![]() G3S06504D Global Power | 100000 | - | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 650 V | 1.7 V @ 4 A | -55°C ~ 175°C | 650 V | 11.5A | 181pF @ 0V, 1MHz | 0 ns | ||
![]() G3S06505H Global Power | 50000 | - | - | Through Hole | TO-220-2 Full Pack | TO-220F | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | No | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 650 V | 1.7 V @ 5 A | -55°C ~ 175°C | 650 V | 15.4A | 424pF @ 0V, 1MHz | 0 ns | ||
![]() G3S06504C Global Power | 6 |
| - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 650 V | 1.7 V @ 4 A | -55°C ~ 175°C | 650 V | 11.5A | 181pF @ 0V, 1MHz | 0 ns | ||
![]() G5S06504QT Global Power | In Stock | - | - | Surface Mount | 4-PowerTSFN | 4-DFN (8x8) | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 650 V | 1.55 V @ 4 A | -55°C ~ 175°C | 650 V | 14A | 181pF @ 0V, 1MHz | 0 ns | ||
![]() G3S12002H Global Power | In Stock | - | - | Through Hole | TO-220-2 Full Pack | TO-220F | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 1200 V | 1.7 V @ 2 A | -55°C ~ 175°C | 1200 V | 7.3A | 136pF @ 0V, 1MHz | 0 ns | ||
![]() G3S06502A Global Power | 10000 | - | - | Through Hole | TO-220-2 | TO-220AC | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | No | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 650 V | 1.7 V @ 2 A | -55°C ~ 175°C | 650 V | 9A | 123pF @ 0V, 1MHz | 0 ns | ||
![]() G3S06503H Global Power | 10000 | - | - | Through Hole | TO-220-2 Full Pack | TO-220F | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 650 V | 1.7 V @ 3 A | -55°C ~ 175°C | 650 V | 10A | 181pF @ 0V, 1MHz | 0 ns | ||
![]() G3S12010A Global Power | In Stock | - | - | Through Hole | TO-220-2 | TO-220AC | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 1200 V | 1.7 V @ 10 A | -55°C ~ 175°C | 1200 V | 34.8A | 770pF @ 0V, 1MHz | 0 ns | ||
![]() G3S06506H Global Power | In Stock | - | - | Through Hole | TO-220-2 Full Pack | TO-220F | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | No | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 650 V | 1.7 V @ 6 A | -55°C ~ 175°C | 650 V | 15.4A | 424pF @ 0V, 1MHz | 0 ns | ||
![]() GP3D050A120B Global Power | In Stock | - | - | - | - | - | - | - | - | - | Yes | - | - | - | - | - | - | - | - | - | - | ||
![]() G5S12005P Global Power | In Stock | - | - | - | - | - | Global Power Technology Co. Ltd | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | ||
![]() G5S06508CT Global Power | In Stock | - | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 650 V | 1.5 V @ 8 A | -55°C ~ 175°C | 650 V | 31A | 550pF @ 0V, 1MHz | 0 ns | ||
![]() G4S06508JT Global Power | In Stock | - | - | Through Hole | TO-220-2 Isolated Tab | TO-220ISO | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 650 V | 1.7 V @ 8 A | -55°C ~ 175°C | 650 V | 23.5A | 395pF @ 0V, 1MHz | 0 ns | ||
![]() G5S06520AT Global Power | In Stock | - | - | Through Hole | TO-220-2 | TO-220AC | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 650 V | 1.5 V @ 20 A | -55°C ~ 175°C | 650 V | 68.8A | 1600pF @ 0V, 1MHz | 0 ns | ||
![]() G4S06508CT Global Power | In Stock | - | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 650 V | 1.7 V @ 8 A | -55°C ~ 175°C | 650 V | 24A | 395pF @ 0V, 1MHz | 0 ns | ||
![]() G5S06510QT Global Power | In Stock | - | - | Surface Mount | 4-PowerTSFN | 4-DFN (8x8) | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 650 V | 1.5 V @ 10 A | -55°C ~ 175°C | 650 V | 53A | 645pF @ 0V, 1MHz | 0 ns | ||
![]() G3S06530P Global Power | 17 | - | - | Through Hole | TO-247-2 | TO-247AC | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | Active | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 650 V | 1.7 V @ 30 A | -55°C ~ 175°C | 650 V | 95A | 2150pF @ 0V, 1MHz | 0 ns |