- Series
- Diode Type
- Mounting Type
- Operating Temperature - Junction
- Package / Case
- Speed
- Supplier Device Package
- Voltage - DC Reverse (Vr) (Max)
- Current - Reverse Leakage @ Vr
- Voltage - Forward (Vf) (Max) @ If
- Reverse Recovery Time (trr)
- Mfr
Attribute column
Manufacturer
Global Power Diodes - Rectifiers - Single
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Mounting Type | Package / Case | Supplier Device Package | Config. | IF(A),Tc=125℃ | IF(A),Tc=160℃ | IF(A),Tc=25℃ | Ifsm(A),Tc=25℃ | Mfr | Package | Positions | Product Status | Ptot(W),Tc=110℃ | Ptot(W),Tc=25℃ | Qc(nC),TJ=25℃ | Rad Hardened | Vrrm(V) | Series | Color | Speed | Diode Type | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Capacitance @ Vr, F | Reverse Recovery Time (trr) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 G3S06508D Global Power | 100000 | - | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | - | - | - | - | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | - | Active | - | - | - | No | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 650 V | 1.7 V @ 8 A | -55°C ~ 175°C | 650 V | 25.5A | 550pF @ 0V, 1MHz | 0 ns | ||
G3S12010D Global Power | 52388 | - | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | - | - | - | - | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | - | Active | - | - | - | No | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 1200 V | 1.7 V @ 10 A | -55°C ~ 175°C | 1200 V | 33.2A | 765pF @ 0V, 1MHz | 0 ns | ||
G3S06504D Global Power | 100000 | - | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | - | - | - | - | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | - | Active | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 650 V | 1.7 V @ 4 A | -55°C ~ 175°C | 650 V | 11.5A | 181pF @ 0V, 1MHz | 0 ns | ||
G3S06505H Global Power | 50000 | - | - | Through Hole | TO-220-2 Full Pack | TO-220F | - | - | - | - | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | - | Active | - | - | - | No | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 650 V | 1.7 V @ 5 A | -55°C ~ 175°C | 650 V | 15.4A | 424pF @ 0V, 1MHz | 0 ns | ||
G3S06504C Global Power | 6 |
| - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | - | - | - | - | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | - | Active | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 650 V | 1.7 V @ 4 A | -55°C ~ 175°C | 650 V | 11.5A | 181pF @ 0V, 1MHz | 0 ns | ||
G5S06504QT Global Power | In Stock | - | - | Surface Mount | 4-PowerTSFN | 4-DFN (8x8) | - | - | - | - | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | - | Active | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 650 V | 1.55 V @ 4 A | -55°C ~ 175°C | 650 V | 14A | 181pF @ 0V, 1MHz | 0 ns | ||
G3S12002H Global Power | In Stock | - | - | Through Hole | TO-220-2 Full Pack | TO-220F | - | - | - | - | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | - | Active | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 1200 V | 1.7 V @ 2 A | -55°C ~ 175°C | 1200 V | 7.3A | 136pF @ 0V, 1MHz | 0 ns | ||
G3S06502A Global Power | 10000 | - | - | Through Hole | TO-220-2 | TO-220AC | - | - | - | - | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | - | Active | - | - | - | No | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 650 V | 1.7 V @ 2 A | -55°C ~ 175°C | 650 V | 9A | 123pF @ 0V, 1MHz | 0 ns | ||
G3S06503H Global Power | 10000 | - | - | Through Hole | TO-220-2 Full Pack | TO-220F | - | - | - | - | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | - | Active | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 650 V | 1.7 V @ 3 A | -55°C ~ 175°C | 650 V | 10A | 181pF @ 0V, 1MHz | 0 ns | ||
G3S12010A Global Power | In Stock | - | - | Through Hole | TO-220-2 | TO-220AC | - | - | - | - | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | - | Active | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 1200 V | 1.7 V @ 10 A | -55°C ~ 175°C | 1200 V | 34.8A | 770pF @ 0V, 1MHz | 0 ns | ||
G3S06506H Global Power | In Stock | - | - | Through Hole | TO-220-2 Full Pack | TO-220F | - | - | - | - | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | - | Active | - | - | - | No | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 650 V | 1.7 V @ 6 A | -55°C ~ 175°C | 650 V | 15.4A | 424pF @ 0V, 1MHz | 0 ns | ||
G5S12010A Global Power | In Stock | - | - | Through Hole | TO-220-2 | TO-220AC | - | - | - | - | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | 24 | Active | - | - | - | - | - | - | Black | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 1200 V | 1.7 V @ 10 A | -55°C ~ 175°C | 1200 V | 37A | - | 0 ns | ||
G5S12008PM Global Power | In Stock | - | - | Through Hole | TO-247-2 | TO-247AC | - | - | - | - | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | 7 | Active | - | - | - | - | - | - | Black | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 1200 V | 1.7 V @ 8 A | -55°C ~ 175°C | 1200 V | 27.9A | 550pF @ 0V, 1MHz | 0 ns | ||
G5S12010C Global Power | In Stock | - | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | - | - | - | - | - | Global Power Technology-GPT | Cut Tape (CT);Tape & Box (TB); | 24 | Active | - | - | - | - | - | - | Black | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 µA @ 1200 V | 1.7 V @ 10 A | -55°C ~ 175°C | 1200 V | 34.2A | 825pF @ 0V, 1MHz | 0 ns | ||
 G3S06502R Global Power | 10000 | - | - | - | - | - | Single | 3.2(135℃) | 2（156.5℃） | 6.5 | 20 | - | - | - | - | 15 | 35 | 4（VR=400V） | - | 650 | - | - | - | - | - | - | - | - | - | - | - | ||
 G5S06508QT-ASE Global Power | In Stock | - | - | - | - | - | Single | 15 （135°C） | 8（160℃） | 32.2 | 80 | - | - | - | - | 53 | 122 | 27（VR=400V） | - | 650 | - | - | - | - | - | - | - | - | - | - | - | ||
G5S12020D Global Power | In Stock | - | - | - | - | - | Single | 25.3（135℃） | 20（148℃） | 53.6 | 230 | - | - | - | - | 96 | 221 | 103（VR=800V） | - | 1200 | - | - | - | - | - | - | - | - | - | - | - | ||
 G5S12030PMT Global Power | In Stock | - | - | - | - | - | Single | 36.1（135℃） | 30(146℃) | 75.4 | 200 | - | - | - | - | 155 | 357 | 122（VR=800V） | - | 1200 | - | - | - | - | - | - | - | - | - | - | - | ||
G4S06510DT Global Power Technology-GPT | In Stock | - | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263 | Single | - | 10（158.5℃） | 36.7 | 80 | Global Power Technology-GPT | Tape & Box (TB) | - | Active | 67 | 155 | 28（VR=400V） | - | 650 | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | 1.7 V @ 10 A | -55°C ~ 175°C | 650 V | 32A | 550pF @ 0V, 1MHz | 0 ns | ||
G3S12010C Global Power Technology-GPT | In Stock | - | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | - | - | - | - | - | Global Power Technology-GPT | Tape & Box (TB) | - | Active | - | - | - | - | - | - | - | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 1200 V | 1.7 V @ 10 A | -55°C ~ 175°C | 1200 V | 33.2A | 765pF @ 0V, 1MHz | 0 ns |