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Factory Lead Time

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Clock Frequency-Max (fCLK)

Data Rate Architecture

Factory Pack QuantityFactory Pack Quantity

Ihs Manufacturer

Interface Type

Manufacturer

Manufacturer Part Number

Maximum Clock Frequency

Maximum Clock Rate

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Maximum Operating Temperature

Memory Types

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Moisture Sensitive

Moisture Sensitivity Levels

Mounting

Mounting Styles

Number of I/O Lines

Number of Words

Number of Words Code

Operating Temperature-Max

Operating Temperature-Min

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Package Code

Package Description

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Package Style

Part Life Cycle Code

Part Package Code

Reflow Temperature-Max (s)

Risk Rank

RoHS

Rohs Code

Supplier Package

Supply Voltage-Max

Supply Voltage-Min

Supply Voltage-Nom (Vsup)

Timing Type

Tradename

Typical Operating Supply Voltage

Usage Level

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

ECCN Code

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Terminal Finish

Additional Feature

HTS Code

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Number of Functions

Terminal Pitch

Reach Compliance Code

Pin Count

JESD-30 Code

Qualification Status

Supply Voltage-Max (Vsup)

Power Supplies

Temperature Grade

Supply Voltage-Min (Vsup)

Memory Size

Number of Ports

Operating Mode

Supply Current-Max

Access Time

Architecture

Organization

Output Characteristics

Seated Height-Max

Memory Width

Address Bus Width

Product Type

Density

Standby Current-Max

Memory Density

Screening Level

Parallel/Serial

I/O Type

Memory IC Type

Standby Voltage-Min

Product Category

Length

Width

GS816236DB-150I
GS816236DB-150I

GSI Technology

In Stock

-

-

-

BGA-119

-

-

-

GSI Technology

-

-

21

-

Parallel

GSI Technology

-

150 MHz

-

-

+ 85 C

SDR

-

- 40 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

3.6 V

2.3 V

-

-

SyncBurst

-

-

-

Tray

GS816236DB

-

-

-

Pipeline/Flow Through

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

18 Mbit

-

-

200 mA, 210 mA

7.5 ns

-

512 k x 36

-

-

-

-

SRAM

-

-

-

-

-

-

-

-

SRAM

-

-

GS84032CGB-200I
GS84032CGB-200I

GSI Technology

In Stock

-

-

-

BGA-119

-

-

-

-

-

-

84

-

Parallel

-

-

200 MHz

-

-

+ 85 C

SDR

-

- 40 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

-

3.6 V

2.3 V

-

-

SyncBurst

-

-

-

Tray

GS84032CGB

-

-

-

Pipeline/Flow Through

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

4 Mbit

-

-

160 mA, 190 mA

6.5 ns

-

128 k x 32

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

GS84018CGT-166I
GS84018CGT-166I

GSI Technology

In Stock

-

-

-

TQFP-100

YES

100

7 ns

-

-

-

72

GSI TECHNOLOGY

Parallel

-

GS84018CGT-166I

166 MHz

-

-

+ 85 C

SDR

-

- 40 C

Yes

3

-

SMD/SMT

-

262144 words

256000

85 °C

-40 °C

PLASTIC/EPOXY

LQFP

LQFP,

-

RECTANGULAR

FLATPACK, LOW PROFILE

Active

-

NOT SPECIFIED

5.66

Details

Yes

-

3.6 V

2.3 V

3.3 V

-

SyncBurst

-

-

-

Tray

GS84018CGT

-

-

3A991.B.2.B

Pipeline/Flow Through

Pure Matte Tin (Sn)

FLOW-THROUGH OR PIPELINED ARCHITECTURE

-

-

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

-

R-PQFP-G100

-

3.6 V

-

INDUSTRIAL

3 V

4 Mbit

-

SYNCHRONOUS

145 mA, 170 mA

6.5 ns

-

256 k x 18

-

1.6 mm

18

-

-

-

-

4718592 bit

-

PARALLEL

-

CACHE SRAM

-

-

20 mm

14 mm

GS84018CB-250
GS84018CB-250

GSI Technology

In Stock

-

-

-

BGA-119

-

-

-

-

-

-

84

-

Parallel

-

-

250 MHz

-

-

+ 70 C

SDR

-

0 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

3.6 V

2.3 V

-

-

SyncBurst

-

-

-

Tray

GS84018CB

-

-

-

Pipeline/Flow Through

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

4 Mbit

-

-

145 mA, 180 mA

5.5 ns

-

256 k x 18

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

GS84036CB-166
GS84036CB-166

GSI Technology

In Stock

-

-

-

BGA-119

YES

119

-

-

-

-

84

GSI TECHNOLOGY

Parallel

-

GS84036CB-166

166 MHz

-

-

+ 70 C

SDR

-

0 C

Yes

-

-

SMD/SMT

-

131072 words

128000

70 °C

-

PLASTIC/EPOXY

BGA

BGA,

-

RECTANGULAR

GRID ARRAY

Active

-

NOT SPECIFIED

5.73

-

No

-

3.6 V

2.3 V

2.5 V

-

SyncBurst

-

-

-

Tray

GS84036CB

-

-

3A991.B.2.B

Pipeline/Flow Through

-

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

-

-

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

-

R-PBGA-B119

-

2.7 V

-

COMMERCIAL

2.3 V

4 Mbit

-

SYNCHRONOUS

135 mA, 160 mA

7 ns

-

128 k x 36

-

1.99 mm

36

-

-

-

-

4718592 bit

-

PARALLEL

-

CACHE SRAM

-

-

22 mm

14 mm

GS8342Q36BGD-333
GS8342Q36BGD-333

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

QDR

15

-

Parallel

GSI Technology

-

333 MHz

333 MHz

1.9 V

+ 70 C

DDR

1.7 V

0 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

1 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaQuad-II

1.8000 V

Commercial grade

0 to 85 °C

Tray

GS8342Q36BGD

-

-

-

SigmaQuad-II

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

36 Mbit

2

-

1.055 A

-

Pipelined

1 M x 36

-

-

-

19 Bit

SRAM

36 Mbit

-

-

Commercial

-

-

-

-

SRAM

-

-

GS8160E18DGT-250IV
GS8160E18DGT-250IV

GSI Technology

In Stock

-

-

-

TQFP-100

-

-

-

GSI Technology

-

-

18

-

Parallel

GSI Technology

-

250 MHz

250 MHz

2, 2.7 V

+ 100 C

SDR

1.7, 2.3 V

- 40 C

Yes

-

-

SMD/SMT

18 Bit

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

TQFP

2.7 V

1.7 V

-

Synchronous

SyncBurst

1.8, 2.5 V

-

-40 to 85 °C

Tray

GS8160E18DGT

-

-

-

DCD Synchronous Burst

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

100

-

-

-

-

-

-

18 Mbit

-

-

225 mA, 245 mA

5.5

-

1 M x 18

-

-

-

-

SRAM

-

-

18

-

-

-

-

-

SRAM

-

-

GS8672T36BE-300I
GS8672T36BE-300I

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

-

15

-

Parallel

GSI Technology

-

300 MHz

-

-

+ 85 C

DDR-II

-

- 40 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

1.9 V

1.7 V

-

-

SigmaDDR-II

-

-

-

Tray

GS8672T36BE

-

-

-

SigmaDDR-II

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

72 Mbit

-

-

1.2 A

-

-

2 M x 36

-

-

-

-

SRAM

-

-

72

-

-

-

-

-

SRAM

-

-

GS816236DGB-400
GS816236DGB-400

GSI Technology

In Stock

-

-

-

BGA-119

-

-

-

GSI Technology

-

-

21

-

Parallel

GSI Technology

-

400 MHz

250@Flow-Through/400@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

-

-

SMD/SMT

36 Bit

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

3.6 V

2.3 V

-

Synchronous

SyncBurst

2.5, 3.3 V

-

0 to 85 °C

Tray

GS816236DGB

-

-

-

Pipeline/Flow Through

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

119

-

-

-

-

-

-

18 Mbit

-

-

280 mA, 365 mA

4@Flow-Through/2.5@P

-

512 k x 36

-

-

-

19 Bit

SRAM

-

-

18

-

-

-

-

-

SRAM

-

-

GS832218AB-250
GS832218AB-250

GSI Technology

In Stock

-

-

8 Weeks

BGA-119

YES

119

5.5 ns

-

250 MHz

SDR

-

GSI TECHNOLOGY

Parallel

GSI Technology

GS832218AB-250

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2.7, 3.6 V

+ 70 C

-

2.3, 3 V

0 C

-

-

Surface Mount

SMD/SMT

18 Bit

2 MWords

2000000

70 °C

-

PLASTIC/EPOXY

BGA

BGA, BGA119,7X17,50

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.11

-

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

-

2.5, 3.3 V

Commercial grade

0 to 85 °C

-

-

e0

No

3A991.B.2.B

-

Tin/Lead (Sn/Pb)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2.7 V

2.5/3.3 V

COMMERCIAL

2.3 V

36 Mbit

2

SYNCHRONOUS

215 mA, 255 mA

5.5 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.99 mm

18

21 Bit

-

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

CACHE SRAM

2.3 V

-

22 mm

14 mm

GS8342D19BD-350
GS8342D19BD-350

GSI Technology

In Stock

-

-

10 Weeks

BGA-165

YES

165

0.45 ns

GSI Technology

350 MHz

QDR

15

GSI TECHNOLOGY

Parallel

GSI Technology

GS8342D19BD-350

350 MHz

350 MHz

1.9 V

+ 70 C

DDR

1.7 V

0 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

2 MWords

2000000

70 °C

-

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.22

N

No

FBGA

1.9 V

1.7 V

1.8 V

Synchronous

SigmaQuad-II+

1.8000 V

Commercial grade

0 to 85 °C

Tray

GS8342D19BD

-

-

3A991.B.2.B

SigmaQuad-II+ B4

-

PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

1.9 V

1.5/1.8,1.8 V

COMMERCIAL

1.7 V

36 Mbit

2

SYNCHRONOUS

665 mA

-

Pipelined

2 M x 18

3-STATE

1.4 mm

18

19 Bit

SRAM

36 Mbit

0.22 A

37748736 bit

Commercial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

SRAM

15 mm

13 mm

GS8672Q18BGE-300
GS8672Q18BGE-300

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

-

15

-

Parallel

GSI Technology

-

300 MHz

-

-

+ 70 C

QDR-II

-

0 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

-

1.9 V

1.7 V

-

-

SigmaQuad-II

-

-

-

Tray

GS8672Q18BGE

-

-

-

SigmaQuad-II

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

72 Mbit

-

-

1.1 A

-

-

4 M x 18

-

-

-

-

SRAM

-

-

72

-

-

-

-

-

SRAM

-

-

GS816136DD-333IV
GS816136DD-333IV

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

SDR

18

-

Parallel

GSI Technology

-

333 MHz

200@Flow-Through/333@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

512 kWords

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FBGA

2.7 V

1.7 V

-

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 100 °C

Tray

GS816136DD

-

-

-

Synchronous Burst

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

18 Mbit

4

-

260 mA, 330 mA

5 ns

Flow-Through/Pipelined

512 k x 36

-

-

-

19 Bit

SRAM

18 Mbit

-

-

Industrial

-

-

-

-

SRAM

-

-

GS84036CB-250
GS84036CB-250

GSI Technology

In Stock

-

-

-

BGA-119

YES

119

-

-

-

-

84

GSI TECHNOLOGY

Parallel

-

GS84036CB-250

250 MHz

-

-

+ 70 C

SDR

-

0 C

Yes

-

-

SMD/SMT

-

131072 words

128000

70 °C

-

PLASTIC/EPOXY

BGA

BGA,

-

RECTANGULAR

GRID ARRAY

Active

-

NOT SPECIFIED

5.73

-

No

-

3.6 V

2.3 V

2.5 V

-

SyncBurst

-

-

-

Tray

GS84036CB

-

-

3A991.B.2.B

Pipeline/Flow Through

-

IT ALSO OPERATES AT 3 TO 3.6 V SUPPLY VOLTAGE

-

-

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

-

R-PBGA-B119

-

2.7 V

-

COMMERCIAL

2.3 V

4 Mbit

-

SYNCHRONOUS

155 mA, 195 mA

6.5 ns

-

128 k x 36

-

1.99 mm

36

-

-

-

-

4718592 bit

-

PARALLEL

-

CACHE SRAM

-

-

22 mm

14 mm

GS8161E18DGD-200I
GS8161E18DGD-200I

GSI Technology

In Stock

-

-

10 Weeks

-

YES

165

6.5 ns

-

-

SDR

-

GSI TECHNOLOGY

-

GSI Technology

GS8161E18DGD-200I

-

153.8@Flow-Through/200@Pipelined MHz

2.7, 3.6 V

-

-

2.3, 3 V

-

-

-

Surface Mount

-

18 Bit

1 MWords

1000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA,

-

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.29

-

Yes

FBGA

-

-

2.5 V

Synchronous

-

2.5, 3.3 V

Industrial grade

-40 to 85 °C

-

-

-

-

3A991.B.2.B

-

-

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

-

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

-

INDUSTRIAL

2.3 V

-

2

SYNCHRONOUS

-

-

Flow-Through/Pipelined

1MX18

-

1.4 mm

18

20 Bit

-

18 Mbit

-

18874368 bit

Industrial

PARALLEL

-

CACHE SRAM

-

-

15 mm

13 mm

GS8672D19BE-450I
GS8672D19BE-450I

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

-

15

-

Parallel

GSI Technology

-

450 MHz

-

-

+ 85 C

QDR-II

-

- 40 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

1.9 V

1.7 V

-

-

SigmaQuad-II+

-

-

-

Tray

GS8672D19BE

-

-

-

SigmaQuad-II+

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

72 Mbit

-

-

1.51 A

-

-

4 M x 18

-

-

-

-

SRAM

-

-

72

-

-

-

-

-

SRAM

-

-

GS88236CB-250
GS88236CB-250

GSI Technology

In Stock

-

-

8 Weeks

BGA-119

YES

119

5.5 ns

GSI Technology

-

-

42

GSI TECHNOLOGY

Parallel

GSI Technology

GS88236CB-250

250 MHz

-

-

+ 70 C

SDR

-

0 C

Yes

-

-

SMD/SMT

-

262144 words

256000

70 °C

-

PLASTIC/EPOXY

BGA

BGA,

-

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.13

N

No

-

3.6 V

2.3 V

2.5 V

-

SyncBurst

-

-

-

Tray

GS88236CB

e0

No

3A991.B.2.B

Pipeline/Flow Through

Tin/Lead (Sn/Pb)

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2.7 V

-

COMMERCIAL

2.3 V

9 Mbit

-

SYNCHRONOUS

155 mA, 195 mA

5.5 ns

-

256 k x 36

-

1.77 mm

36

-

SRAM

-

-

9437184 bit

-

PARALLEL

-

CACHE SRAM

-

SRAM

22 mm

14 mm

GS8342D37BD-300
GS8342D37BD-300

GSI Technology

In Stock

-

-

10 Weeks

BGA-165

YES

165

0.45 ns

GSI Technology

300 MHz

QDR

15

GSI TECHNOLOGY

Parallel

GSI Technology

GS8342D37BD-300

300 MHz

300 MHz

-

+ 70 C

DDR

-

0 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

70 °C

-

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.36

N

No

FBGA

1.9 V

1.7 V

1.8 V

Synchronous

SigmaQuad-II+

1.8000 V

Commercial grade

0 to 85 °C

Tray

GS8342D37BD

-

-

3A991.B.2.B

SigmaQuad-II+ B4

-

PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

1.9 V

1.5/1.8,1.8 V

COMMERCIAL

1.7 V

36 Mbit

2

SYNCHRONOUS

675 mA

-

Pipelined

1 M x 36

3-STATE

1.4 mm

36

18 Bit

SRAM

36 Mbit

0.2 A

37748736 bit

Commercial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

SRAM

15 mm

13 mm

GS881Z32CGT-150I
GS881Z32CGT-150I

GSI Technology

In Stock

-

-

-

TQFP-100

-

-

-

GSI Technology

-

-

72

-

Parallel

GSI Technology

-

150 MHz

-

-

+ 85 C

SDR

-

- 40 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

-

3.6 V

2.3 V

-

-

NBT SRAM

-

-

-

Tray

GS881Z32CGT

-

-

-

NBT Pipeline/Flow Through

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

9 Mbit

-

-

150 mA, 160 mA

7.5 ns

-

256 k x 32

-

-

-

-

SRAM

-

-

-

-

-

-

-

-

SRAM

-

-

GS8182Q18BGD-133
GS8182Q18BGD-133

GSI Technology

In Stock

-

-

8 Weeks

BGA-165

YES

165

0.5 ns

GSI Technology

-

-

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS8182Q18BGD-133

133 MHz

-

-

+ 70 C

DDR

-

0 C

Yes

3

-

SMD/SMT

-

1048576 words

1000000

70 °C

-

PLASTIC/EPOXY

LBGA

LBGA,

-

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.19

Details

Yes

-

1.9 V

1.7 V

1.8 V

-

SigmaQuad-II

-

-

-

Tray

GS8182Q18BGD

e1

Yes

3A991.B.2.B

SigmaQuad-II

Tin/Silver/Copper (Sn/Ag/Cu)

PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

1.9 V

-

COMMERCIAL

1.7 V

18 Mbit

-

SYNCHRONOUS

375 mA

-

-

1 M x 18

-

1.4 mm

18

-

SRAM

-

-

18874368 bit

-

PARALLEL

-

DDR SRAM

-

SRAM

15 mm

13 mm