-

10 Weeks

BGA-165

YES

165

6.5 ns

GSI Technology

-

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS816118DD-200IV

200 MHz

-

2, 2.7 V

+ 100 C

SDR

1.7, 2.3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

1 MWords

1000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA,

-

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.26

-

No

FBGA

2.7 V

1.7 V

1.8 V

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 100 °C

Tray

GS816118DD

-

-

3A991.B.2.B

Synchronous Burst

-

ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

-

2 V

-

INDUSTRIAL

1.7 V

18 Mbit

2

SYNCHRONOUS

210 mA, 215 mA

6.5 ns

Flow-Through/Pipelined

1 M x 18

-

1.4 mm

18

-

SRAM

18 Mbit

-

18874368 bit

Industrial

PARALLEL

-

CACHE SRAM

-

SRAM

15 mm

13 mm

-

-

BGA-165

-

-

-

GSI Technology

-

QDR

15

-

Parallel

GSI Technology

-

400 MHz

400 MHz

1.9 V

+ 70 C

DDR

1.7 V

0 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

2 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

N

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaQuad-II+

1.8000 V

Commercial grade

0 to 85 °C

Tray

GS8342D20BD

-

-

-

SigmaQuad-II+

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

36 Mbit

2

-

705 mA

-

Pipelined

2 M x 18

-

-

-

19 Bit

SRAM

36 Mbit

-

-

Commercial

-

-

-

-

SRAM

-

-

-

-

BGA-165

-

-

-

GSI Technology

-

SDR

18

-

Parallel

GSI Technology

-

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

512 kWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

2.7 V

1.7 V

-

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS8161E36DGD

-

-

-

DCD Pipeline/Flow Through

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

18 Mbit

4

-

175 mA, 190 mA

7.5 ns

Flow-Through/Pipelined

512 k x 36

-

-

-

19 Bit

SRAM

18 Mbit

-

-

Commercial

-

-

-

-

SRAM

-

-

-

-

BGA-165

-

-

-

GSI Technology

-

QDR

15

-

Parallel

GSI Technology

-

300 MHz

300 MHz

-

+ 70 C

DDR

-

0 C

Yes

-

Surface Mount

SMD/SMT

8 Bit

4 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

N

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaQuad-II+

1.8000 V

Commercial grade

0 to 85 °C

Tray

GS8342DT07BD

-

-

-

SigmaQuad-II+ B4

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

36 Mbit

2

-

530 mA

-

Pipelined

4 M x 8

-

-

-

20 Bit

SRAM

36 Mbit

-

-

Commercial

-

-

-

-

SRAM

-

-

-

8 Weeks

BGA-119

YES

119

4.5 ns

GSI Technology

333 MHz

SDR

14

GSI TECHNOLOGY

Parallel

GSI Technology

GS8322Z18AGB-333

333 MHz

222.2@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

3

Surface Mount

SMD/SMT

18 Bit

2 MWords

2000000

70 °C

-

PLASTIC/EPOXY

BGA

BGA, BGA119,7X17,50

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.13

Details

Yes

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

Commercial grade

0 to 85 °C

Tray

GS8322Z18AGB

e1

Yes

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2.7 V

2.5/3.3 V

COMMERCIAL

2.3 V

36 Mbit

2

SYNCHRONOUS

235 mA, 320 mA

4.5 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.99 mm

18

21 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

2.3 V

SRAM

22 mm

14 mm

-

-

BGA-165

-

-

-

GSI Technology

-

DDR

15

-

Parallel

GSI Technology

-

350 MHz

350 MHz

1.9 V

+ 70 C

DDR

1.7 V

0 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

2 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaSIO-II

1.8000 V

Commercial grade

0 to 85 °C

Tray

GS8342S18BGD

-

-

-

SigmaSIO DDR-II

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

36 Mbit

2

-

665 mA

-

Pipelined

2 M x 18

-

-

-

20 Bit

SRAM

36 Mbit

-

-

Commercial

-

-

-

-

SRAM

-

-

-

-

BGA-165

-

-

-

GSI Technology

-

-

15

-

Parallel

GSI Technology

-

400 MHz

-

-

+ 70 C

DDR

-

0 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

-

1.9 V

1.7 V

-

-

SigmaSIO-II

-

-

-

Tray

GS8342S09BGD

-

-

-

SigmaSIO DDR-II

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

36 Mbit

-

-

705 mA

-

-

4 M x 9

-

-

-

-

SRAM

-

-

36

-

-

-

-

-

SRAM

-

-

-

10 Weeks

TQFP-100

YES

100

5.5 ns

-

-

SDR

-

GSI TECHNOLOGY

Parallel

GSI Technology

GS8161Z18DGT-250V

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2, 2.7 V

+ 70 C

-

1.7, 2.3 V

0 C

-

-

Surface Mount

SMD/SMT

18 Bit

1 MWords

1000000

70 °C

-

PLASTIC/EPOXY

LQFP

LQFP,

-

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.26

-

Yes

TQFP

2.7 V

1.7 V

1.8 V

Synchronous

-

1.8, 2.5 V

Commercial grade

0 to 85 °C

-

-

-

-

3A991.B.2.B

-

-

ALSO OPERATES AT 2.5V

8542.32.00.41

-

CMOS

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

100

R-PQFP-G100

-

2 V

-

COMMERCIAL

1.7 V

18 Mbit

2

SYNCHRONOUS

205 mA, 225 mA

5.5 ns

Flow-Through/Pipelined

1 M x 18

-

1.6 mm

18

20 Bit

-

18 Mbit

-

18874368 bit

Commercial

PARALLEL

-

ZBT SRAM

-

-

20 mm

14 mm

-

-

BGA-165

-

-

-

-

-

-

18

-

Parallel

-

-

300 MHz

-

-

+ 85 C

DDR

-

- 40 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

1.9 V

1.7 V

-

-

SigmaSIO DDR-II

-

-

-

Tray

GS8182S09BD

-

-

-

SigmaSIO DDR-II

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

18 Mbit

-

-

495 mA

-

-

2 M x 9

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BGA-165

-

-

-

GSI Technology

-

QDR

15

-

Parallel

GSI Technology

-

200 MHz

200 MHz

1.9 V

+ 85 C

DDR

1.7 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

2 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaQuad-II+

1.8000 V

Industrial grade

-40 to 100 °C

Tray

GS8342Q19BGD

-

-

-

SigmaQuad-II+ B2

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

36 Mbit

2

-

565 mA

-

Pipelined

2 M x 18

-

-

-

20 Bit

SRAM

36 Mbit

-

-

Industrial

-

-

-

-

SRAM

-

-

-

-

TQFP-100

-

-

-

GSI Technology

-

SDR

18

-

Parallel

GSI Technology

-

250 MHz

250 MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

0 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

1 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

TQFP

2.7 V

1.7 V

-

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS8160E18DGT

-

-

-

DCD Synchronous Burst

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

100

-

-

-

-

-

-

18 Mbit

2

-

205 mA, 225 mA

5.5 ns

Flow-Through/Pipelined

1 M x 18

-

-

-

20 Bit

SRAM

18 Mbit

-

-

Commercial

-

-

-

-

SRAM

-

-

-

-

BGA-165

-

-

-

GSI Technology

-

QDR

15

-

Parallel

GSI Technology

-

350 MHz

350 MHz

-

+ 70 C

DDR

-

0 C

Yes

-

Surface Mount

SMD/SMT

9 Bit

4 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaQuad-II+

1.8000 V

Commercial grade

0 to 85 °C

Tray

GS8342DT10BGD

-

-

-

SigmaQuad-II+ B4

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

36 Mbit

2

-

665 mA

-

Pipelined

4 M x 9

-

-

-

20 Bit

SRAM

36 Mbit

-

-

Commercial

-

-

-

-

SRAM

-

-

-

10 Weeks

BGA-165

YES

165

0.45 ns

GSI Technology

350 MHz

DDR

15

GSI TECHNOLOGY

Parallel

GSI Technology

GS8342R09BD-350I

350 MHz

350 MHz

1.9 V

+ 85 C

DDR-II

1.7 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

9 Bit

4 MWords

4000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.36

-

No

FBGA

1.9 V

1.7 V

1.8 V

Synchronous

SigmaCIO DDR-II

1.8000 V

Industrial grade

-40 to 100 °C

Tray

GS8342R09BD

e0

-

3A991.B.2.B

SigmaDDR-II B4

Tin/Lead (Sn/Pb)

PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

1.9 V

1.5/1.8,1.8 V

INDUSTRIAL

1.7 V

36 Mbit

1

SYNCHRONOUS

575 mA

-

Pipelined

4 M x 9

3-STATE

1.4 mm

9

20 Bit

SRAM

36 Mbit

0.22 A

37748736 bit

Industrial

PARALLEL

COMMON

DDR SRAM

1.7 V

SRAM

15 mm

13 mm

-

8 Weeks

BGA-165

YES

165

0.45 ns

GSI Technology

333 MHz

-

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS8182D37BGD-333

333 MHz

-

-

+ 70 C

DDR

-

0 C

Yes

3

-

SMD/SMT

-

524288 words

512000

70 °C

-

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.21

Details

Yes

-

1.9 V

1.7 V

1.8 V

-

SigmaQuad-II+

-

-

-

Tray

GS8182D37BGD

e1

Yes

3A991.B.2.B

SigmaQuad II+

Tin/Silver/Copper (Sn/Ag/Cu)

PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

1.9 V

1.5/1.8,1.8 V

COMMERCIAL

1.7 V

18 Mbit

-

SYNCHRONOUS

575 mA

-

-

512 k x 36

3-STATE

1.4 mm

36

-

SRAM

-

0.16 A

18874368 bit

-

PARALLEL

SEPARATE

DDR SRAM

1.7 V

SRAM

15 mm

10 mm

-

-

BGA-165

-

-

-

GSI Technology

-

-

15

-

Parallel

GSI Technology

-

375 MHz

-

-

+ 85 C

QDR-II

-

- 40 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

1.9 V

1.7 V

-

-

SigmaQuad-II+

-

-

-

Tray

GS8672Q19BE

-

-

-

SigmaQuad-II+

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

72 Mbit

-

-

1.32 A

-

-

4 M x 18

-

-

-

-

SRAM

-

-

72

-

-

-

-

-

SRAM

-

-

-

-

BGA-165

-

-

-

GSI Technology

-

SDR

18

-

Parallel

GSI Technology

-

333 MHz

200@Flow-Through/333@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

512 kWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

2.7 V

1.7 V

-

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 85 °C

Tray

GS816236DGD

-

-

-

Pipeline/Flow Through

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

18 Mbit

4

-

240 mA, 310 mA

5 ns

Flow-Through/Pipelined

512 k x 36

-

-

-

19 Bit

SRAM

18 Mbit

-

-

Commercial

-

-

-

-

SRAM

-

-

-

8 Weeks

TQFP-100

YES

100

5 ns

-

-

SDR

-

GSI TECHNOLOGY

Parallel

GSI Technology

GS881Z18CGT-300

300 MHz

-

2.7, 3.6 V

+ 70 C

-

2.3, 3 V

0 C

-

3

Surface Mount

SMD/SMT

18 Bit

512 kWords

512000

70 °C

-

PLASTIC/EPOXY

LQFP

LQFP,

-

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.51

-

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

-

2.5, 3.3 V

Commercial grade

0 to 70 °C

-

GS881Z18CGT

e3

Yes

3A991.B.2.B

-

Matte Tin (Sn)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

-

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2.7 V

-

COMMERCIAL

2.3 V

9 Mbit

1

SYNCHRONOUS

150 mA, 205 mA

5 ns

Flow-Through/Pipelined

512 k x 18

-

1.6 mm

18

-

-

9 Mbit

-

9437184 bit

Commercial

PARALLEL

-

ZBT SRAM

-

-

20 mm

14 mm

-

-

BGA-165

-

-

-

-

-

SDR

-

-

Parallel

-

-

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2, 2.7 V

+ 70 C

-

1.7, 2.3 V

0 C

-

-

Surface Mount

SMD/SMT

32 Bit

512 kWords

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FBGA

2.7 V

1.7 V

-

Synchronous

-

1.8, 2.5 V

Commercial grade

0 to 70 °C

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

165

-

-

-

-

-

-

18 Mbit

4

-

175 mA, 190 mA

7.5 ns

Flow-Through/Pipelined

512 k x 32

-

-

-

19 Bit

-

18 Mbit

-

-

Commercial

-

-

-

-

-

-

-

-

10 Weeks

BGA-119

YES

119

6.5 ns

GSI Technology

-

SDR

21

GSI TECHNOLOGY

Parallel

GSI Technology

GS8162Z18DGB-200V

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

1 MWords

1000000

70 °C

-

PLASTIC/EPOXY

BGA

BGA,

-

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.27

Details

Yes

FBGA

2.7 V

1.7 V

1.8 V

Synchronous

NBT SRAM

1.8, 2.5 V

Commercial grade

0 to 85 °C

Tray

GS8162Z18DGB

-

-

3A991.B.2.B

NBT Pipeline/Flow Through

-

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2 V

-

COMMERCIAL

1.7 V

18 Mbit

2

SYNCHRONOUS

190 mA, 195 mA

6.5 ns

Flow-Through/Pipelined

1 M x 18

-

1.99 mm

18

20 Bit

SRAM

18 Mbit

-

18874368 bit

Commercial

PARALLEL

-

ZBT SRAM

-

SRAM

22 mm

14 mm

-

-

BGA-165

-

-

-

GSI Technology

-

SDR

18

-

Parallel

GSI Technology

-

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

512 kWords

-

-

-

-

-

-

-

-

-

-

-

-

-

N

-

FBGA

2.7 V

1.7 V

-

Synchronous

NBT SRAM

1.8, 2.5 V

Commercial grade

0 to 85 °C

Tray

GS8161Z36DD

-

-

-

NBT

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

18 Mbit

4

-

225 mA, 245 mA

5.5 ns

Flow-Through/Pipelined

512 k x 36

-

-

-

19 Bit

SRAM

18 Mbit

-

-

Commercial

-

-

-

-

SRAM

-

-