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Factory Pack QuantityFactory Pack Quantity

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Manufacturer Part Number

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Supply Voltage-Min (Vsup)

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Address Bus Width

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Memory IC Type

Standby Voltage-Min

Product Category

Length

Width

GS88136CD-300
GS88136CD-300

GSI Technology

In Stock

-

-

4 Weeks, 1 Day

BGA-165

YES

165

-

GSI Technology

-

SDR

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS88136CD-300

300 MHz

200@Flow-Through/300@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

256 kWords

256000

70 °C

-

PLASTIC/EPOXY

LBGA

LBGA,

-

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.14

N

No

FBGA

3.6 V

2.3 V

3.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 70 °C

Tray

GS88136CD

3A991.B.2.B

Pipeline/Flow Through

ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY, FLOW THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

3.6 V

-

COMMERCIAL

3 V

9 Mbit

1

SYNCHRONOUS

165 mA, 225 mA

5 ns

Flow-Through/Pipelined

256 k x 36

-

1.4 mm

36

18 Bit

SRAM

9 Mbit

-

9437184 bit

Commercial

SERIAL

-

CACHE SRAM

-

SRAM

15 mm

13 mm

GS8342T36BD-250I
GS8342T36BD-250I

GSI Technology

In Stock

-

-

10 Weeks

BGA-165

YES

165

0.45 ns

GSI Technology

250 MHz

DDR

15

GSI TECHNOLOGY

Parallel

GSI Technology

GS8342T36BD-250I

250 MHz

250 MHz

1.9 V

+ 85 C

DDR

1.7 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.33

-

No

FBGA

1.9 V

1.7 V

1.8 V

Synchronous

SigmaDDR-II

1.8000 V

Industrial grade

-40 to 100 °C

Tray

GS8342T36BD

3A991.B.2.B

SigmaDDR-II B2

PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

1.9 V

1.5/1.8,1.8 V

INDUSTRIAL

1.7 V

36 Mbit

1

SYNCHRONOUS

585 mA

-

Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

36 Mbit

0.185 A

37748736 bit

Industrial

PARALLEL

COMMON

DDR SRAM

1.7 V

SRAM

15 mm

13 mm

GS8342S18BD-350I
GS8342S18BD-350I

GSI Technology

In Stock

-

-

10 Weeks

BGA-165

YES

165

0.45 ns

GSI Technology

350 MHz

DDR

15

GSI TECHNOLOGY

Parallel

GSI Technology

GS8342S18BD-350I

350 MHz

350 MHz

1.9 V

+ 85 C

DDR

1.7 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

2 MWords

2000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.36

-

No

FBGA

1.9 V

1.7 V

1.8 V

Synchronous

SigmaSIO-II

1.8000 V

Industrial grade

-40 to 100 °C

Tray

GS8342S18BD

3A991.B.2.B

SigmaSIO DDR-II

PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

1.9 V

1.5/1.8,1.8 V

INDUSTRIAL

1.7 V

36 Mbit

2

SYNCHRONOUS

675 mA

-

Pipelined

2 M x 18

3-STATE

1.4 mm

18

20 Bit

SRAM

36 Mbit

0.23 A

37748736 bit

Industrial

PARALLEL

SEPARATE

DDR SRAM

1.7 V

SRAM

15 mm

13 mm

GS8160E32DGT-250I
GS8160E32DGT-250I

GSI Technology

In Stock

-

-

-

TQFP-100

-

-

-

GSI Technology

-

-

36

-

Parallel

GSI Technology

-

250 MHz

-

-

+ 100 C

SDR

-

- 40 C

Yes

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

-

3.6 V

2.3 V

-

-

SyncBurst

-

-

-

Tray

GS8160E32DGT

-

Pipeline/Flow Through

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

18 Mbit

-

-

250 mA, 270 mA

5.5 ns

-

512 k x 32

-

-

-

-

SRAM

-

-

-

-

-

-

-

-

SRAM

-

-

GS840Z18CGT-166I
GS840Z18CGT-166I

GSI Technology

In Stock

-

-

-

TQFP-100

-

-

-

GSI Technology

-

-

72

-

Parallel

GSI Technology

-

166 MHz

-

-

+ 85 C

SDR

-

- 40 C

Yes

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

-

3.6 V

2.3 V

-

-

NBT SRAM

-

-

-

Tray

GS840Z18CGT

-

NBT Pipeline/Flow Through

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

4 Mbit

-

-

145 mA, 160 mA

7 ns

-

256 k x 18

-

-

-

-

SRAM

-

-

-

-

-

-

-

-

SRAM

-

-

GS816136DD-250IV
GS816136DD-250IV

GSI Technology

In Stock

-

-

10 Weeks

BGA-165

YES

165

5.5 ns

GSI Technology

-

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS816136DD-250IV

250 MHz

-

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

512 kWords

512000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA,

-

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.26

-

No

FBGA

2.7 V

1.7 V

1.8 V

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 100 °C

Tray

GS816136DD

3A991.B.2.B

Synchronous Burst

ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

-

2 V

-

INDUSTRIAL

1.7 V

18 Mbit

4

SYNCHRONOUS

245 mA, 265 mA

5.5 ns

Flow-Through/Pipelined

512 k x 36

-

1.4 mm

36

-

SRAM

18 Mbit

-

18874368 bit

Industrial

PARALLEL

-

CACHE SRAM

-

SRAM

15 mm

13 mm

GS8161E36DGT-150I
GS8161E36DGT-150I

GSI Technology

In Stock

-

-

-

TQFP-100

-

-

-

GSI Technology

-

-

36

-

Parallel

GSI Technology

-

150 MHz

-

-

+ 85 C

SDR

-

- 40 C

Yes

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

-

3.6 V

2.3 V

-

-

SyncBurst

-

-

-

Tray

GS8161E36DGT

-

DCD Pipeline/Flow Through

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

18 Mbit

-

-

200 mA, 210 mA

7.5 ns

-

512 k x 36

-

-

-

-

SRAM

-

-

-

-

-

-

-

-

SRAM

-

-

GS8342R08BGD-250I
GS8342R08BGD-250I

GSI Technology

In Stock

-

-

10 Weeks

BGA-165

YES

165

0.45 ns

GSI Technology

250 MHz

DDR

15

GSI TECHNOLOGY

Parallel

GSI Technology

GS8342R08BGD-250I

250 MHz

250 MHz

1.9 V

+ 85 C

DDR

1.7 V

- 40 C

Yes

Surface Mount

SMD/SMT

8 Bit

4 MWords

4000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.35

Details

Yes

FBGA

1.9 V

1.7 V

1.8 V

Synchronous

SigmaCIO DDR-II

1.8000 V

Industrial grade

-40 to 100 °C

Tray

GS8342R08BGD

3A991.B.2.B

SigmaDDR-II B4

PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

1.9 V

1.5/1.8,1.8 V

INDUSTRIAL

1.7 V

36 Mbit

1

SYNCHRONOUS

405 mA

-

Pipelined

4 M x 8

3-STATE

1.4 mm

8

20 Bit

SRAM

36 Mbit

0.185 A

33554432 bit

Industrial

PARALLEL

COMMON

DDR SRAM

1.7 V

SRAM

15 mm

13 mm

GS816118DGT-333V
GS816118DGT-333V

GSI Technology

In Stock

-

-

-

TQFP-100

-

-

-

GSI Technology

-

SDR

18

-

Parallel

GSI Technology

-

333 MHz

200@Flow-Through/333@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

18 Bit

1 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

TQFP

2.7 V

1.7 V

-

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 85 °C

Tray

GS816118DGT

-

Synchronous Burst

-

-

Memory & Data Storage

-

-

-

-

-

-

-

100

-

-

-

-

-

-

18 Mbit

2

-

220 mA, 280 mA

5 ns

Flow-Through/Pipelined

1 M x 18

-

-

-

20 Bit

SRAM

18 Mbit

-

-

Commercial

-

-

-

-

SRAM

-

-

GS8161Z32DD-150I
GS8161Z32DD-150I

GSI Technology

In Stock

-

-

10 Weeks

BGA-165

YES

165

7.5 ns

-

-

SDR

-

GSI TECHNOLOGY

-

GSI Technology

GS8161Z32DD-150I

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2.7, 3.6 V

+ 85 C

-

2.3, 3 V

- 40 C

-

Surface Mount

SMD/SMT

32 Bit

512 kWords

512000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA,

-

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.3

-

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

-

2.5, 3.3 V

Industrial grade

-40 to 85 °C

-

-

3A991.B.2.B

-

FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

-

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

-

2.7 V

-

INDUSTRIAL

2.3 V

18 Mbit

4

SYNCHRONOUS

200 mA, 210 mA

7.5 ns

Flow-Through/Pipelined

512 k x 32

-

1.4 mm

32

19 Bit

-

18 Mbit

-

16777216 bit

Industrial

PARALLEL

-

ZBT SRAM

-

-

15 mm

13 mm

GS8322Z18AGB-150I
GS8322Z18AGB-150I

GSI Technology

In Stock

-

-

-

BGA-119

-

-

-

GSI Technology

-

-

14

-

Parallel

GSI Technology

-

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

-

SMD/SMT

18 Bit

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

3.6 V

2.3 V

-

Synchronous

NBT SRAM

2.5, 3.3 V

-

-40 to 100 °C

Tray

GS8322Z18AGB

-

NBT Pipeline/Flow Through

-

-

Memory & Data Storage

-

-

-

-

-

-

-

119

-

-

-

-

-

-

36 Mbit

-

-

195 mA, 210 mA

7.5@Flow-Through/3.8

-

2 M x 18

-

-

-

-

SRAM

-

-

36

-

-

-

-

-

SRAM

-

-

GS8342R18BD-300
GS8342R18BD-300

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

-

-

DDR

-

-

Parallel

-

-

300 MHz

300 MHz

-

+ 70 C

-

-

0 C

-

Surface Mount

SMD/SMT

18 Bit

2 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FBGA

1.9 V

1.7 V

-

Synchronous

-

1.8000 V

Commercial grade

0 to 85 °C

-

-

-

-

-

-

-

-

-

-

-

-

-

-

165

-

-

-

-

-

-

36 Mbit

1

-

450 mA

-

Pipelined

2 M x 18

-

-

-

21 Bit

-

36 Mbit

-

-

Commercial

-

-

-

-

-

-

-

GS8182S18BD-300I
GS8182S18BD-300I

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

-

18

-

Parallel

GSI Technology

-

300 MHz

-

-

+ 85 C

DDR

-

- 40 C

Yes

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

1.9 V

1.7 V

-

-

SigmaSIO DDR-II

-

-

-

Tray

GS8182S18BD

-

SigmaSIO DDR-II

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

18 Mbit

-

-

495 mA

-

-

1 M x 18

-

-

-

-

SRAM

-

-

-

-

-

-

-

-

SRAM

-

-

GS8342T19BGD-333
GS8342T19BGD-333

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

DDR

15

-

Parallel

GSI Technology

-

333 MHz

333 MHz

1.9 V

+ 70 C

DDR

1.7 V

0 C

Yes

Surface Mount

SMD/SMT

18 Bit

2 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaDDR-II+

1.8000 V

Commercial grade

0 to 85 °C

Tray

GS8342T19BGD

-

SigmaDDR-II+ B2

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

36 Mbit

1

-

515 mA

-

Pipelined

2 M x 18

-

-

-

20 Bit

SRAM

36 Mbit

-

-

Commercial

-

-

-

-

SRAM

-

-

GS8161E32DGD-250IV
GS8161E32DGD-250IV

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

SDR

18

-

Parallel

GSI Technology

-

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

32 Bit

512 kWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

2.7 V

1.7 V

-

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 85 °C

Tray

GS8161E32DGD

-

DCD Pipeline/Flow Through

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

18 Mbit

4

-

245 mA, 265 mA

5.5 ns

Flow-Through/Pipelined

512 k x 32

-

-

-

19 Bit

SRAM

18 Mbit

-

-

Industrial

-

-

-

-

SRAM

-

-

GS8182D09BD-167I
GS8182D09BD-167I

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

-

18

-

Parallel

GSI Technology

-

167 MHz

-

-

+ 85 C

DDR

-

- 40 C

Yes

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

1.9 V

1.7 V

-

-

SigmaQuad-II

-

-

-

Tray

GS8182D09BD

-

SigmaQuad-II

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

18 Mbit

-

-

325 mA

-

-

2 M x 9

-

-

-

-

SRAM

-

-

-

-

-

-

-

-

SRAM

-

-

GS8161E32DGT-250IV
GS8161E32DGT-250IV

GSI Technology

In Stock

-

-

-

TQFP-100

-

-

-

GSI Technology

-

-

18

-

Parallel

GSI Technology

-

250 MHz

-

-

+ 85 C

SDR

-

- 40 C

Yes

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

-

2.7 V

1.7 V

-

-

NBT SRAM

-

-

-

Tray

GS8161E32DGT

-

DCD Pipeline/Flow Through

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

18 Mbit

-

-

245 mA, 265 mA

5.5 ns

-

512 k x 32

-

-

-

-

SRAM

-

-

-

-

-

-

-

-

SRAM

-

-

GS8182Q36BD-167
GS8182Q36BD-167

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

-

18

-

Parallel

GSI Technology

-

167 MHz

-

-

+ 70 C

DDR

-

0 C

Yes

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

N

-

-

1.9 V

1.7 V

-

-

SigmaQuad-II

-

-

-

Tray

GS8182Q36BD

-

SigmaQuad-II

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

18 Mbit

-

-

485 mA

-

-

512 k x 36

-

-

-

-

SRAM

-

-

-

-

-

-

-

-

SRAM

-

-

GS8342S18BD-300I
GS8342S18BD-300I

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

-

15

-

Parallel

GSI Technology

-

300 MHz

300 MHz

1.9 V

+ 85 C

DDR

1.7 V

- 40 C

Yes

-

SMD/SMT

18 Bit

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FBGA

1.9 V

1.7 V

-

-

SigmaSIO DDR-II

1.8000 V

-

-40 to 100 °C

Tray

GS8342S18BD

-

SigmaSIO DDR-II

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

36 Mbit

-

-

540 mA

0.45

-

2 M x 18

-

-

-

-

SRAM

-

-

36

-

-

-

-

-

SRAM

-

-

GS8342D07BGD-300
GS8342D07BGD-300

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

QDR

15

-

Parallel

GSI Technology

-

300 MHz

300 MHz

1.9 V

+ 70 C

DDR

1.7 V

0 C

Yes

Surface Mount

SMD/SMT

8 Bit

4 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaQuad-II+

1.8000 V

Commercial grade

0 to 85 °C

Tray

GS8342D07BGD

-

SigmaQuad-II+ B4

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

36 Mbit

2

-

530 mA

-

Pipelined

4 M x 8

-

-

-

20 Bit

SRAM

36 Mbit

-

-

Commercial

-

-

-

-

SRAM

-

-