- Organization
- Memory Size
- Mounting Styles
- Package / Case
- Supply Voltage-Max
- Supply Voltage-Min
- Interface Type
- Maximum Operating Temperature
- Minimum Operating Temperature
- Supply Current-Max
- Maximum Clock Frequency
- Manufacturer
Attribute column
Manufacturer
GSI Memory
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Factory Lead Time | Package / Case | Surface Mount | Number of Terminals | Access Time-Max | Brand | Clock Frequency-Max (fCLK) | Data Rate Architecture | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Maximum Clock Frequency | Maximum Clock Rate | Maximum Operating Supply Voltage | Maximum Operating Temperature | Memory Types | Minimum Operating Supply Voltage | Minimum Operating Temperature | Moisture Sensitive | Moisture Sensitivity Levels | Mounting | Mounting Styles | Number of I/O Lines | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Timing Type | Tradename | Typical Operating Supply Voltage | Usage Level | Operating Temperature | Packaging | Series | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Memory Size | Number of Ports | Operating Mode | Supply Current-Max | Access Time | Architecture | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Product Type | Density | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Product Category | Length | Width |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 GS84032CB-166 GSI Technology | In Stock | - | - | - | BGA-119 | YES | 119 | - | - | - | - | 84 | GSI TECHNOLOGY | Parallel | - | GS84032CB-166 | 166 MHz | - | - | + 70 C | SDR | - | 0 C | Yes | - | - | SMD/SMT | - | 131072 words | 128000 | 70 °C | - | PLASTIC/EPOXY | BGA | BGA, | - | RECTANGULAR | GRID ARRAY | Active | - | NOT SPECIFIED | 5.74 | - | No | - | 3.6 V | 2.3 V | 2.5 V | - | SyncBurst | - | - | - | Tray | GS84032CB | - | - | 3A991.B.2.B | Pipeline/Flow Through | - | IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE | - | - | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | - | R-PBGA-B119 | - | 2.7 V | - | COMMERCIAL | 2.3 V | 4 Mbit | - | SYNCHRONOUS | 135 mA, 160 mA | 7 ns | - | 128 k x 32 | - | 1.99 mm | 32 | - | - | - | - | 4194304 bit | - | PARALLEL | - | CACHE SRAM | - | - | 22 mm | 14 mm | ||
GS84032CGT-250 GSI Technology | In Stock | - | - | - | TQFP-100 | - | - | - | - | - | - | 72 | - | Parallel | - | - | 250 MHz | - | - | + 70 C | SDR | - | 0 C | Yes | - | - | SMD/SMT | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Details | - | - | 3.6 V | 2.3 V | - | - | SyncBurst | - | - | - | Tray | GS84032CGT | - | - | - | Pipeline/Flow Through | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 4 Mbit | - | - | 155 mA, 195 mA | 5.5 ns | - | 128 k x 32 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
GS84018CGB-200 GSI Technology | In Stock | - | - | - | BGA-119 | YES | 119 | - | - | - | - | 84 | GSI TECHNOLOGY | Parallel | - | GS84018CGB-200 | 200 MHz | - | - | + 70 C | SDR | - | 0 C | Yes | - | - | SMD/SMT | - | 262144 words | 256000 | 70 °C | - | PLASTIC/EPOXY | BGA | BGA, | - | RECTANGULAR | GRID ARRAY | Active | - | NOT SPECIFIED | 5.66 | Details | Yes | - | 3.6 V | 2.3 V | 2.5 V | - | SyncBurst | - | - | - | Tray | GS84018CGB | - | - | 3A991.B.2.B | Pipeline/Flow Through | - | IT ALSO OPERATES AT 3 TO 3.6 V SUPPLY VOLTAGE | - | - | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | - | R-PBGA-B119 | - | 2.7 V | - | COMMERCIAL | 2.3 V | 4 Mbit | - | SYNCHRONOUS | 130 mA, 155 mA | 6.5 ns | - | 256 k x 18 | - | 1.99 mm | 18 | - | - | - | - | 4718592 bit | - | PARALLEL | - | CACHE SRAM | - | - | 22 mm | 14 mm | ||
GS832272GC-133I GSI Technology | In Stock | - | - | 8 Weeks | BGA-209 | YES | 209 | 8.5 ns | GSI Technology | 133 MHz | SDR | 14 | GSI TECHNOLOGY | Parallel | GSI Technology | GS832272GC-133I | 133 MHz | - | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | 3 | Surface Mount | SMD/SMT | 72 Bit | 512 kWords | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA209,11X19,40 | BGA209,11X19,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.14 | Details | Yes | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | SyncBurst | 2.5, 3.3 V | Industrial grade | -40 to 85 °C | Tray | GS832272GC | e1 | Yes | 3A991.B.2.B | SCD/DCD Pipeline/Flow Through | TIN SILVER COPPER | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 209 | R-PBGA-B209 | Not Qualified | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | 36 Mbit | 8 | SYNCHRONOUS | 220 mA, 255 mA | 8.5 ns | Flow-Through/Pipelined | 512 k x 72 | 3-STATE | 1.7 mm | 72 | - | SRAM | 36 Mbit | 0.08 A | 37748736 bit | Industrial | PARALLEL | COMMON | CACHE SRAM | 2.38 V | SRAM | 22 mm | 14 mm | ||
GS8672Q37BE-375M GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | GSI Technology | - | - | 15 | - | Parallel | GSI Technology | - | 375 MHz | - | - | + 125 C | QDR-II | - | - 55 C | Yes | - | - | SMD/SMT | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1.9 V | 1.7 V | - | - | SigmaQuad-II+ | - | - | - | Tray | GS8672Q37BE | - | - | - | SigmaQuad-II+ ECCRAM | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 72 Mbit | - | - | - | - | - | 2 M x 36 | - | - | - | - | SRAM | - | - | 72 | - | - | - | - | - | SRAM | - | - | ||
GS8640Z36GT-167V GSI Technology | In Stock | - | - | 4 Weeks | TQFP-100 | YES | 100 | 8 ns | GSI Technology | - | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8640Z36GT-167V | 167 MHz | 125@Flow-Through/167@Pipelined MHz | 2, 2.7 V | + 70 C | SDR | 1.7, 2.3 V | 0 C | Yes | 3 | Surface Mount | SMD/SMT | 36 Bit | 2 MWords | 2000000 | 70 °C | - | PLASTIC/EPOXY | LQFP | LQFP, | - | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.36 | Details | Yes | TQFP | 2.7 V | 1.7 V | 1.8 V | Synchronous | NBT SRAM | 1.8, 2.5 V | Commercial grade | 0 to 70 °C | Tray | GS8640Z36GT | e3 | Yes | 3A991.B.2.B | NBT Pipeline/Flow Through | Matte Tin (Sn) | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2 V | - | COMMERCIAL | 1.7 V | 72 Mbit | 4 | SYNCHRONOUS | 220 mA, 270 mA | 8 ns | Flow-Through/Pipelined | 2 M x 36 | - | 1.6 mm | 36 | 21 Bit | SRAM | 72 Mbit | - | 75497472 bit | Commercial | PARALLEL | - | ZBT SRAM | - | SRAM | 20 mm | 14 mm | ||
GS8161E18DGT-333IV GSI Technology | In Stock | - | - | - | TQFP-100 | - | - | - | GSI Technology | - | SDR | 18 | - | Parallel | GSI Technology | - | 333 MHz | 200@Flow-Through/333@Pipelined MHz | 2, 2.7 V | + 85 C | SDR | 1.7, 2.3 V | - 40 C | Yes | - | Surface Mount | SMD/SMT | 18 Bit | 1 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | Details | - | TQFP | 2.7 V | 1.7 V | - | Synchronous | SyncBurst | 1.8, 2.5 V | Industrial grade | -40 to 85 °C | Tray | GS8161E18DGT | - | - | - | DCD Pipeline/Flow Through | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 100 | - | - | - | - | - | - | 18 Mbit | 2 | - | 240 mA, 300 mA | 5 ns | Flow-Through/Pipelined | 1 M x 18 | - | - | - | 20 Bit | SRAM | 18 Mbit | - | - | Industrial | - | - | - | - | SRAM | - | - | ||
GS8640FZ36GT-7.5I GSI Technology | In Stock | - | - | 8 Weeks | TQFP-100 | YES | 100 | 7.5 ns | GSI Technology | - | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8640FZ36GT-7.5I | - | 133.3 MHz | 3.6 V | + 85 C | SDR | 3 V | - 40 C | Yes | 3 | Surface Mount | SMD/SMT | 36 Bit | 2 MWords | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | LQFP, | - | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.36 | Details | Yes | TQFP | 3.6 V | 2.3 V | 2.5 V | Synchronous | NBT SRAM | 3.3000 V | Industrial grade | -40 to 85 °C | Tray | GS8640FZ36GT | e3 | Yes | 3A991.B.2.B | NBT Flow Through | Matte Tin (Sn) | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY. | 8542.32.00.41 | Memory & Data Storage | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.75 V | - | INDUSTRIAL | 2.25 V | 72 Mbit | 4 | SYNCHRONOUS | 250 mA | 7.5 ns | Flow-Through | 2 M x 36 | - | 1.6 mm | 36 | 21 Bit | SRAM | 72 Mbit | - | 75497472 bit | Industrial | PARALLEL | - | ZBT SRAM | - | SRAM | 20 mm | 14 mm | ||
GS8662S08BD-350 GSI Technology | In Stock | - | - | 8 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | - | DDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8662S08BD-350 | 350 MHz | 350 MHz | 1.9 V | + 70 C | DDR | 1.7 V | 0 C | Yes | - | Surface Mount | SMD/SMT | 8 Bit | 8 MWords | 8000000 | 70 °C | - | PLASTIC/EPOXY | LBGA | LBGA, | - | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.79 | N | No | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaSIO DDR-II | 1.8000 V | Commercial grade | 0 to 85 °C | Tray | GS8662S08BD | - | - | 3A991.B.2.B | SigmaSIO DDR-II | - | PIPELINED ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | - | COMMERCIAL | 1.7 V | 72 Mbit | 2 | SYNCHRONOUS | 695 mA | - | Pipelined | 8 M x 8 | - | 1.4 mm | 8 | 22 Bit | SRAM | 72 Mbit | - | 67108864 bit | Commercial | PARALLEL | - | STANDARD SRAM | - | SRAM | 15 mm | 13 mm | ||
GS880E32CGT-333 GSI Technology | In Stock | - | - | - | TQFP-100 | - | - | - | GSI Technology | - | SDR | 36 | - | Parallel | GSI Technology | - | 333 MHz | 222.2@Flow-Through/333@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | - | Surface Mount | SMD/SMT | 32 Bit | 256 kWords | - | - | - | - | - | - | - | - | - | - | - | - | - | Details | - | TQFP | 3.6 V | 2.3 V | - | Synchronous | SyncBurst | 2.5, 3.3 V | Commercial grade | 0 to 70 °C | Tray | GS880E32CGT | - | - | - | DCD | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 100 | - | - | - | - | - | - | 9 Mbit | 2 | - | 180 mA, 240 mA | 4.5 ns | Flow-Through/Pipelined | 256 k x 32 | - | - | - | 18 Bit | SRAM | 8 Mbit | - | - | Commercial | - | - | - | - | SRAM | - | - | ||
GS8342T20BD-500 GSI Technology | In Stock | - | - | 10 Weeks | BGA-165 | YES | 165 | 0.45 ns | - | 500 MHz | DDR | - | GSI TECHNOLOGY | Parallel | GSI Technology | GS8342T20BD-500 | 500 MHz | 500 MHz | 1.9 V | + 70 C | - | 1.7 V | 0 C | - | - | Surface Mount | SMD/SMT | 18 Bit | 2 MWords | 2000000 | 70 °C | - | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.35 | - | No | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | - | 1.8000 V | Commercial grade | 0 to 85 °C | - | GS8342T20BD | e0 | - | 3A991.B.2.B | - | Tin/Lead (Sn/Pb) | PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | 36 Mbit | 1 | SYNCHRONOUS | 730 mA | - | Pipelined | 2 M x 18 | 3-STATE | 1.4 mm | 18 | 20 Bit | - | 36 Mbit | 0.24 A | 37748736 bit | Commercial | PARALLEL | COMMON | DDR SRAM | 1.7 V | - | 15 mm | 13 mm | ||
GS8662DT06BD-500I GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | GSI Technology | - | QDR | 15 | - | Parallel | GSI Technology | - | 500 MHz | 500 MHz | 1.9 V | + 85 C | DDR | 1.7 V | - 40 C | Yes | - | Surface Mount | SMD/SMT | 8 Bit | 8 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | FBGA | 1.9 V | 1.7 V | - | Synchronous | SigmaQuad-II+ | 1.8000 V | Industrial grade | -40 to 100 °C | Tray | GS8662DT06BD | - | - | - | SigmaQuad-II+ | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | 72 Mbit | 2 | - | 900 mA | - | Pipelined | 8 M x 8 | - | - | - | 21 Bit | SRAM | 72 Mbit | - | - | Industrial | - | - | - | - | SRAM | - | - | ||
GS8662Q19BGD-357I GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | GSI Technology | - | QDR | 15 | - | Parallel | GSI Technology | - | 357 MHz | 357 MHz | 1.9 V | + 85 C | DDR | 1.7 V | - 40 C | Yes | - | Surface Mount | SMD/SMT | 18 Bit | 4 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | Details | - | FBGA | 1.9 V | 1.7 V | - | Synchronous | SigmaQuad-II+ | 1.8000 V | Industrial grade | -40 to 100 °C | Tray | GS8662Q19BGD | - | - | - | SigmaQuad-II+ B2 | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | 72 Mbit | 2 | - | 995 mA | - | Pipelined | 4 M x 18 | - | - | - | 21 Bit | SRAM | 72 Mbit | - | - | Industrial | - | - | - | - | SRAM | - | - | ||
GS881Z32CGD-150 GSI Technology | In Stock | - | - | 8 Weeks | BGA-165 | YES | 100 | 7.5 ns | - | - | - | - | GSI TECHNOLOGY | Parallel | GSI Technology | GS881Z32CGD-150 | 150 MHz | - | - | + 70 C | - | - | 0 C | - | 3 | - | SMD/SMT | - | 262144 words | 256000 | 70 °C | - | PLASTIC/EPOXY | LQFP | LQFP, | - | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.29 | - | Yes | - | 3.6 V | 2.3 V | 2.5 V | - | - | - | - | - | - | GS881Z32CGD | e1 | Yes | 3A991.B.2.B | - | Tin/Silver/Copper (Sn/Ag/Cu) | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY | 8542.32.00.41 | - | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.7 V | - | COMMERCIAL | 2.3 V | 9 Mbit | - | SYNCHRONOUS | 130 mA, 140 mA | 7.5 ns | - | 256KX32 | - | 1.6 mm | 32 | - | - | - | - | 8388608 bit | - | PARALLEL | - | ZBT SRAM | - | - | 20 mm | 14 mm | ||
GS881E32CGD-200 GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | GSI Technology | - | - | 72 | - | Parallel | GSI Technology | - | 200 MHz | - | - | + 70 C | SDR | - | 0 C | Yes | - | - | SMD/SMT | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Details | - | - | 3.6 V | 2.3 V | - | - | SyncBurst | - | - | - | Tray | GS881E32CGD | - | - | - | DCD Pipeline/Flow Through | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 9 Mbit | - | - | 140 mA, 170 mA | 6.5 ns | - | 256 k x 32 | - | - | - | - | SRAM | - | - | - | - | - | - | - | - | SRAM | - | - | ||
GS8642Z72C-200I GSI Technology | In Stock | - | - | 12 Weeks | BGA-209 | YES | 209 | 7.5 ns | GSI Technology | 200 MHz | SDR | 14 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8642Z72C-200I | 200 MHz | 133.3@Flow-Through/200@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | 3 | Surface Mount | SMD/SMT | 72 Bit | 1 MWords | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA209,11X19,40 | BGA209,11X19,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 4.79 | - | No | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | NBT SRAM | 2.5, 3.3 V | Industrial grade | -40 to 85 °C | Tray | GS8642Z72C | - | No | 3A991.B.2.B | NBT Pipeline/Flow Through | - | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 209 | R-PBGA-B209 | Not Qualified | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | 72 Mbit | 8 | SYNCHRONOUS | 295 mA, 405 mA | 7.5 ns | Flow-Through/Pipelined | 1 M x 72 | 3-STATE | 1.7 mm | 72 | 20 Bit | SRAM | 72 Mbit | 0.12 A | 75497472 bit | Industrial | PARALLEL | COMMON | ZBT SRAM | 2.3 V | SRAM | 22 mm | 14 mm | ||
GS864418GE-133IV GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | - | - | SDR | - | - | Parallel | - | - | 133 MHz | - | 2, 2.7 V | + 85 C | - | 1.7, 2.3 V | - 40 C | - | - | Surface Mount | SMD/SMT | 18 Bit | 4 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | FBGA | 2.7 V | 1.7 V | - | Synchronous | - | 1.8, 2.5 V | Industrial grade | -40 to 85 °C | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | 72 Mbit | 2 | - | 235 mA, 285 mA | 8.5 ns | Flow-Through/Pipelined | 4 M x 18 | - | - | - | - | - | 72 Mbit | - | - | Industrial | - | - | - | - | - | - | - | ||
GS81302T37E-450 GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | GSI Technology | - | DDR | 10 | - | Parallel | GSI Technology | - | 450 MHz | 450 MHz | 1.9 V | + 70 C | DDR-II | 1.7 V | 0 C | Yes | - | Surface Mount | SMD/SMT | 36 Bit | 4 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | N | - | FBGA | 1.9 V | 1.7 V | - | Synchronous | SigmaDDR-II+ | 1.8000 V | Commercial grade | 0 to 85 °C | Tray | GS81302T37E | - | - | - | SigmaDDR-II+ B2 | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | 144 Mbit | 1 | - | 1.19 A | - | Pipelined | 4 M x 36 | - | - | - | 21 Bit | SRAM | 144 Mbit | - | - | Commercial | - | - | - | - | SRAM | - | - | ||
GS81302DT37GE-350I GSI Technology | In Stock | - | - | 12 Weeks | BGA-165 | YES | 165 | 0.45 ns | - | - | QDR | - | GSI TECHNOLOGY | Parallel | GSI Technology | GS81302DT37GE-350I | 350 MHz | 350 MHz | 1.9 V | + 85 C | - | 1.7 V | - 40 C | - | 3 | Surface Mount | SMD/SMT | 36 Bit | 4 MWords | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, | - | RECTANGULAR | GRID ARRAY, LOW PROFILE | Not Recommended | BGA | NOT SPECIFIED | 5.19 | - | Yes | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | - | 1.8000 V | Industrial grade | -40 to 100 °C | - | GS81302DT37GE | e1 | Yes | 3A991.B.2.B | - | Tin/Silver/Copper (Sn/Ag/Cu) | PIPELINED ARCHITECTURE | 8542.32.00.41 | - | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | - | INDUSTRIAL | 1.7 V | 144 Mbit | 2 | SYNCHRONOUS | 1.065 A | - | Pipelined | 4MX36 | - | 1.5 mm | 36 | 20 Bit | - | 144 Mbit | - | 150994944 bit | Industrial | PARALLEL | - | QDR SRAM | - | - | 17 mm | 15 mm | ||
GS81302D08E-375 GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | GSI Technology | - | QDR | 10 | - | Parallel | GSI Technology | - | 375 MHz | 375 MHz | 1.9 V | + 70 C | QDR-II | 1.7 V | 0 C | Yes | - | Surface Mount | SMD/SMT | 8 Bit | 16 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | N | - | FBGA | 1.9 V | 1.7 V | - | Synchronous | SigmaQuad-II | 1.8000 V | Commercial grade | 0 to 85 °C | Tray | GS81302D08E | - | - | - | SigmaQuad-II | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | 144 Mbit | 2 | - | 995 mA | - | Pipelined | 16 M x 8 | - | - | - | 22 Bit | SRAM | 144 Mbit | - | - | Commercial | - | - | - | - | SRAM | - | - |