- Organization
- Memory Size
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- Supply Voltage-Min
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- Maximum Operating Temperature
- Minimum Operating Temperature
- Supply Current-Max
- Maximum Clock Frequency
- Manufacturer
Attribute column
Manufacturer
GSI Memory
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Factory Lead Time | Package / Case | Surface Mount | Number of Terminals | Access Time-Max | Brand | Data Rate Architecture | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Maximum Clock Frequency | Maximum Clock Rate | Maximum Operating Supply Voltage | Maximum Operating Temperature | Memory Types | Minimum Operating Supply Voltage | Minimum Operating Temperature | Moisture Sensitive | Moisture Sensitivity Levels | Mounting | Mounting Styles | Number of I/O Lines | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Timing Type | Tradename | Typical Operating Supply Voltage | Usage Level | Operating Temperature | Packaging | Series | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Memory Size | Number of Ports | Operating Mode | Supply Current-Max | Access Time | Data Rate | Architecture | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Product Type | Density | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Product Category | Length | Width |
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 GS8182T36BD-250 GSI Technology | In Stock | - | - | 8 Weeks | - | YES | 165 | 0.45 ns | - | - | - | GSI TECHNOLOGY | - | GSI Technology | GS8182T36BD-250 | - | - | - | - | - | - | - | - | - | - | - | - | 524288 words | 512000 | 70 °C | - | PLASTIC/EPOXY | LBGA | LBGA, | - | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.14 | - | No | - | - | - | 1.8 V | - | - | - | - | - | - | - | e0 | No | 3A991.B.2.B | - | Tin/Lead (Sn/Pb) | PIPELINED ARCHITECTURE, LATE WRITE | 8542.32.00.41 | - | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | not_compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | - | COMMERCIAL | 1.7 V | - | - | SYNCHRONOUS | - | - | - | - | 512KX36 | - | 1.4 mm | 36 | - | - | - | - | 18874368 bit | - | PARALLEL | - | DDR SRAM | - | - | 15 mm | 13 mm | ||
GS8673ED18BGK-500I GSI Technology | In Stock | - | - | 12 Weeks | BGA-260 | YES | 260 | - | - | QDR | 8 | GSI TECHNOLOGY | Parallel | - | GS8673ED18BGK-500I | 500 MHz | 500 MHz | 1.4 V | + 100 C | DDR | 1.25 V | - 40 C | Yes | - | Surface Mount | SMD/SMT | 18 Bit | 4 MWords | 4000000 | - | - | PLASTIC/EPOXY | HBGA | HBGA, | - | RECTANGULAR | GRID ARRAY, HEAT SINK/SLUG | Active | - | NOT SPECIFIED | 5.73 | Details | Yes | BGA | 1.4 V | 1.25 V | 1.3 V | Synchronous | SigmaQuad-IIIe | 1.3500 V | Industrial grade | -40 to 85 °C | Tray | GS8673ED18BGK | - | - | 3A991.B.2.B | SigmaQuad-IIIe B4 | - | IT ALSO OPERATES AT 1.35 V TYPICAL VOLTAGE | 8542.32.00.41 | - | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 260 | R-PBGA-B260 | - | 1.4 V | - | - | 1.25 V | 72 Mbit | 1 | SYNCHRONOUS | 1.77 A | - | 1 Gb/s | Pipelined | 4 M x 18 | - | 2.3 mm | 18 | 20 Bit | - | 72 Mbit | - | 75497472 bit | Industrial | PARALLEL | - | DDR SRAM | - | - | 22 mm | 14 mm | ||
GS81302T37E-333 GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | GSI Technology | - | 10 | - | Parallel | GSI Technology | - | 333 MHz | - | - | + 70 C | DDR-II | - | 0 C | Yes | - | - | SMD/SMT | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | N | - | - | 1.9 V | 1.7 V | - | - | SigmaDDR-II+ | - | - | - | Tray | GS81302T37E | - | - | - | SigmaDDR-II+ B2 | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 144 Mbit | - | - | 850 mA | - | - | - | 4 M x 36 | - | - | - | - | SRAM | - | - | - | - | - | - | - | - | SRAM | - | - | ||
GS880E36CGT-150IV GSI Technology | In Stock | - | - | 8 Weeks | TQFP-100 | YES | 100 | 7.5 ns | GSI Technology | - | 66 | GSI TECHNOLOGY | Parallel | GSI Technology | GS880E36CGT-150IV | 150 MHz | - | 2, 2.7 V | + 85 C | SDR | 1.7, 2.3 V | - 40 C | Yes | 3 | - | SMD/SMT | 36 Bit | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.38 | Details | Yes | TQFP | 2.7 V | 1.7 V | 1.8 V | Synchronous | SyncBurst | 1.8, 2.5 V | Industrial grade | -40 to 85 °C | Tray | GS880E36CGT | e3 | Yes | 3A991.B.2.B | DCD | PURE MATTE TIN | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2 V | 1.8/2.5 V | INDUSTRIAL | 1.7 V | 9 Mbit | - | SYNCHRONOUS | 130 mA, 145 mA | 7.5@Flow-Through/3.8 | - | - | 256 k x 36 | 3-STATE | 1.6 mm | 36 | - | SRAM | - | 0.045 A | 9 | Industrial | PARALLEL | COMMON | CACHE SRAM | 1.7 V | SRAM | 20 mm | 14 mm | ||
GS882Z36CB-250V GSI Technology | In Stock | - | - | - | BGA-119 | - | - | - | GSI Technology | SDR | 42 | - | Parallel | GSI Technology | - | 250 MHz | - | 2, 2.7 V | + 70 C | SDR | 1.7, 2.3 V | 0 C | Yes | - | Surface Mount | SMD/SMT | 36 Bit | 256 kWords | - | - | - | - | - | - | - | - | - | - | - | - | - | N | - | FBGA | 2.7 V | 1.7 V | - | Synchronous | NBT SRAM | 1.8, 2.5 V | Commercial grade | 0 to 70 °C | Tray | GS882Z36CB | - | - | - | NBT | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 119 | - | - | - | - | - | - | 9 Mbit | 4 | - | 140 mA, 180 mA | 5.5 ns | - | Flow-Through/Pipelined | 256 k x 36 | - | - | - | 18 Bit | SRAM | 9 Mbit | - | - | Commercial | - | - | - | - | SRAM | - | - | ||
GS8662DT06BD-400I GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | - | QDR | - | - | Parallel | - | - | 400 MHz | 400 MHz | 1.9 V | + 85 C | - | 1.7 V | - 40 C | - | - | Surface Mount | SMD/SMT | 8 Bit | 8 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | FBGA | 1.9 V | 1.7 V | - | Synchronous | - | 1.8000 V | Industrial grade | -40 to 100 °C | - | GS8662DT06BD | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | 72 Mbit | 2 | - | 745 mA | - | - | Pipelined | 8 M x 8 | - | - | - | 21 Bit | - | 72 Mbit | - | - | Industrial | - | - | - | - | - | - | - | ||
GS81302TT37E-450I GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | GSI Technology | DDR | 10 | - | Parallel | GSI Technology | - | 450 MHz | 450 MHz | 1.9 V | + 85 C | DDR-II | 1.7 V | - 40 C | Yes | - | Surface Mount | SMD/SMT | 36 Bit | 4 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | N | - | FBGA | 1.9 V | 1.7 V | - | Synchronous | SigmaDDR-II+ | 1.8000 V | Industrial grade | -40 to 100 °C | Tray | GS81302TT37E | - | - | - | SigmaDDR-II+ B2 | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | 144 Mbit | 1 | - | 1.2 A | - | - | Pipelined | 4 M x 36 | - | - | - | 21 Bit | SRAM | 144 Mbit | - | - | Industrial | - | - | - | - | SRAM | - | - | ||
GS81302DT19E-350I GSI Technology | In Stock | - | - | 12 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | QDR | 10 | GSI TECHNOLOGY | Parallel | GSI Technology | GS81302DT19E-350I | 350 MHz | 350 MHz | 1.9 V | + 85 C | QDR-II | 1.7 V | - 40 C | Yes | - | Surface Mount | SMD/SMT | 18 Bit | 8 MWords | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, | - | RECTANGULAR | GRID ARRAY, LOW PROFILE | Not Recommended | BGA | NOT SPECIFIED | 5.33 | - | No | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaQuad-II+ | 1.8000 V | Industrial grade | -40 to 100 °C | Tray | GS81302DT19E | - | No | 3A991.B.2.B | SigmaQuad-II+ B4 | - | PIPELINED ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | - | INDUSTRIAL | 1.7 V | 144 Mbit | 2 | SYNCHRONOUS | 950 mA | - | - | Pipelined | 8 M x 18 | - | 1.5 mm | 18 | 21 Bit | SRAM | 144 Mbit | - | 150994944 bit | Industrial | PARALLEL | - | QDR SRAM | - | SRAM | 17 mm | 15 mm | ||
GS81302TT10GE-350I GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | - | DDR | - | - | Parallel | - | - | 350 MHz | 350 MHz | 1.9 V | + 85 C | - | 1.7 V | - 40 C | - | - | Surface Mount | SMD/SMT | 9 Bit | 16 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | FBGA | 1.9 V | 1.7 V | - | Synchronous | - | 1.8000 V | Industrial grade | -40 to 100 °C | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | 144 Mbit | 1 | - | 810 mA | - | - | Pipelined | 16 M x 9 | - | - | - | 23 Bit | - | 144 Mb | - | - | Industrial | - | - | - | - | - | - | - | ||
GS8673EQ18BGK-625I GSI Technology | In Stock | - | - | 12 Weeks | BGA-260 | YES | 260 | 0.4 ns | GSI Technology | QDR | 8 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8673EQ18BGK-625I | 625 MHz | 625/400 MHz | 1.4 V | + 100 C | QDR-III | 1.3 V | - 40 C | Yes | - | Surface Mount | SMD/SMT | 18 Bit | 4 MWords | 4000000 | - | - | PLASTIC/EPOXY | HBGA | HBGA, | - | RECTANGULAR | GRID ARRAY, HEAT SINK/SLUG | Active | - | NOT SPECIFIED | 5.72 | Details | Yes | BGA | 1.4 V | 1.3 V | 1.35 V | Synchronous | SigmaQuad-IIIe | 1.3500 V | Industrial grade | -40 to 85 °C | Tray | GS8673EQ18BGK | - | - | 3A991.B.2.B | SigmaQuad-IIIe B2 | - | - | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 260 | R-PBGA-B260 | - | 1.4 V | - | - | 1.3 V | 72 Mbit | - | SYNCHRONOUS | 2.11 A | - | - | Pipelined | 4 M x 18 | - | 2.3 mm | 18 | 21 Bit | SRAM | 72 Mbit | - | 75497472 bit | Industrial | PARALLEL | - | DDR SRAM | - | SRAM | 22 mm | 14 mm | ||
GS81302DT38E-450M GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | GSI Technology | QDR | 10 | - | Parallel | GSI Technology | - | 450 MHz | 450 MHz | 1.9 V | + 125 C | QDR-II | 1.7 V | - 55 C | Yes | - | Surface Mount | SMD/SMT | 36 Bit | 4 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | FBGA | 1.9 V | 1.7 V | - | Synchronous | SigmaQuad-II+ | 1.8000 V | Military grade | -55 to 125 °C | Tray | GS81302DT38E | - | - | - | SigmaQuad-II+ | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | 144 Mbit | 2 | - | - | - | - | Pipelined | 4 M x 36 | - | - | - | 20 Bit | SRAM | 144 Mbit | - | - | Military | - | - | - | - | SRAM | - | - | ||
GS81302T08GE-375 GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | GSI Technology | DDR | 10 | - | Parallel | GSI Technology | - | 375 MHz | 375 MHz | 1.9 V | + 70 C | DDR-II | 1.7 V | 0 C | Yes | - | Surface Mount | SMD/SMT | 8 Bit | 16 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | Details | - | FBGA | 1.9 V | 1.7 V | - | Synchronous | SigmaDDR-II | 1.8000 V | Commercial grade | 0 to 85 °C | Tray | GS81302T08GE | - | - | - | SigmaDDR-II B2 | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | 144 Mbit | 2 | - | 845 mA | - | - | Pipelined | 16 M x 8 | - | - | - | 23 Bit | SRAM | 144 Mbit | - | - | Commercial | - | - | - | - | SRAM | - | - | ||
GS81302TT07GE-450I GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | GSI Technology | DDR | 10 | - | Parallel | GSI Technology | - | 450 MHz | 450 MHz | 1.9 V | + 85 C | DDR-II | 1.7 V | - 40 C | Yes | - | Surface Mount | SMD/SMT | 8 Bit | 16 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | Details | - | FBGA | 1.9 V | 1.7 V | - | Synchronous | SigmaDDR-II+ | 1.8000 V | Industrial grade | -40 to 100 °C | Tray | GS81302TT07GE | - | - | - | SigmaDDR-II+ B2 | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | 144 Mbit | 1 | - | 1.01 A | - | - | Pipelined | 16 M x 8 | - | - | - | 23 Bit | SRAM | 144 Mbit | - | - | Industrial | - | - | - | - | SRAM | - | - | ||
GS81302T37GE-400I GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | GSI Technology | DDR | 10 | - | Parallel | GSI Technology | - | 400 MHz | 400 MHz | - | + 85 C | DDR-II | - | - 40 C | Yes | - | Surface Mount | SMD/SMT | 36 Bit | 4 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | Details | - | FBGA | 1.9 V | 1.7 V | - | Synchronous | SigmaDDR-II+ | 1.8000 V | Industrial grade | -40 to 100 °C | Tray | GS81302T37GE | - | - | - | SigmaDDR-II+ B2 | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | 144 Mbit | 1 | - | 1.005 A | - | - | Pipelined | 4 M x 36 | - | - | - | 21 Bit | SRAM | 144 Mbit | - | - | Industrial | - | - | - | - | SRAM | - | - | ||
GS81302T06GE-500I GSI Technology | In Stock | - | - | 12 Weeks | BGA-165 | YES | 165 | 0.37 ns | GSI Technology | DDR | 10 | GSI TECHNOLOGY | Parallel | GSI Technology | GS81302T06GE-500I | 500 MHz | 500 MHz | 1.9 V | + 85 C | DDR-II | 1.7 V | - 40 C | Yes | 3 | Surface Mount | SMD/SMT | 8 Bit | 16 MWords | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, | - | RECTANGULAR | GRID ARRAY, LOW PROFILE | Not Recommended | BGA | NOT SPECIFIED | 5.33 | Details | Yes | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaDDR-II+ | 1.8000 V | Industrial grade | -40 to 100 °C | Tray | GS81302T06GE | e1 | Yes | 3A991.B.2.B | SigmaDDR-II+ | Tin/Silver/Copper (Sn/Ag/Cu) | PIPELINED ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | - | INDUSTRIAL | 1.7 V | 144 Mbit | 1 | SYNCHRONOUS | 1.08 A | - | - | Pipelined | 16 M x 8 | - | 1.5 mm | 8 | 23 Bit | SRAM | 144 Mbit | - | 134217728 bit | Industrial | PARALLEL | - | DDR SRAM | - | SRAM | 17 mm | 15 mm | ||
GS81302Q37GE-250I GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | GSI Technology | QDR | 10 | - | Parallel | GSI Technology | - | 250 MHz | 250 MHz | 1.9 V | + 85 C | QDR-II | 1.7 V | - 40 C | Yes | - | Surface Mount | SMD/SMT | 36 Bit | 4 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | Details | - | FBGA | 1.9 V | 1.7 V | - | Synchronous | SigmaQuad-II+ | 1.8000 V | Industrial grade | -40 to 100 °C | Tray | GS81302Q37GE | - | - | - | SigmaQuad-II+ B2 | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | 144 Mbit | 2 | - | 1.14 A | - | - | Pipelined | 4 M x 36 | - | - | - | 21 Bit | SRAM | 144 Mbit | - | - | Industrial | - | - | - | - | SRAM | - | - | ||
GS8182T09BD-375I GSI Technology | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 375 MHz | 1.9 V | - | - | 1.7 V | - | - | - | - | - | 9 Bit | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | FBGA | - | - | - | - | - | 1.8000 V | - | -40 to 85 °C | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | - | - | - | - | 0.45 | - | - | - | - | - | - | - | - | - | - | 18 | - | - | - | - | - | - | - | - | ||
GS8161E32DGT-333 GSI Technology | In Stock | - | - | - | TQFP-100 | - | - | - | GSI Technology | - | 36 | - | Parallel | GSI Technology | - | 333 MHz | - | - | + 70 C | SDR | - | 0 C | Yes | - | - | SMD/SMT | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Details | - | - | 3.6 V | 2.3 V | - | - | NBT SRAM | - | - | - | Tray | GS8161E32DGT | - | - | - | DCD Pipeline/Flow Through | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 18 Mbit | - | - | 260 mA, 315 mA | 4.5 ns | - | - | 512 k x 32 | - | - | - | - | SRAM | - | - | - | - | - | - | - | - | SRAM | - | - | ||
GS881E36CD-250I GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | GSI Technology | - | 72 | - | Parallel | GSI Technology | - | 250 MHz | - | - | + 85 C | SDR | - | - 40 C | Yes | - | - | SMD/SMT | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 3.6 V | 2.3 V | - | - | SyncBurst | - | - | - | Tray | GS881E36CD | - | - | - | DCD Pipeline/Flow Through | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 9 Mbit | - | - | 175 mA, 215 mA | 5.5 ns | - | - | 256 k x 36 | - | - | - | - | SRAM | - | - | - | - | - | - | - | - | SRAM | - | - | ||
GS880E32CGT-200V GSI Technology | In Stock | - | - | 8 Weeks | TQFP-100 | YES | 100 | 6.5 ns | GSI Technology | - | 66 | GSI TECHNOLOGY | Parallel | GSI Technology | GS880E32CGT-200V | 200 MHz | 153.8@Flow-Through/200@Pipelined MHz | 2, 2.7 V | + 70 C | SDR | 1.7, 2.3 V | 0 C | Yes | 3 | - | SMD/SMT | 32 Bit | 262144 words | 256000 | 70 °C | - | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.38 | Details | Yes | TQFP | 2.7 V | 1.7 V | 1.8 V | Synchronous | SyncBurst | 1.8, 2.5 V | - | 0 to 70 °C | Tray | GS880E32CGT | e3 | Yes | 3A991.B.2.B | DCD | PURE MATTE TIN | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2 V | 1.8/2.5 V | COMMERCIAL | 1.7 V | 9 Mbit | - | SYNCHRONOUS | 125 mA, 150 mA | 6.5@Flow-Through/3@P | - | - | 256 k x 32 | 3-STATE | 1.6 mm | 32 | - | SRAM | - | 0.025 A | 8 | - | PARALLEL | COMMON | CACHE SRAM | 1.7 V | SRAM | 20 mm | 14 mm |