- Organization
- Memory Size
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- Supply Voltage-Min
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- Minimum Operating Temperature
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- Maximum Clock Frequency
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GSI Memory
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Factory Lead Time | Package / Case | Surface Mount | Number of Terminals | Access Time-Max | Brand | Clock Frequency-Max (fCLK) | Data Rate Architecture | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Maximum Clock Frequency | Maximum Clock Rate | Maximum Operating Supply Voltage | Maximum Operating Temperature | Memory Types | Minimum Operating Supply Voltage | Minimum Operating Temperature | Moisture Sensitive | Moisture Sensitivity Levels | Mounting | Mounting Styles | Number of I/O Lines | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Timing Type | Tradename | Typical Operating Supply Voltage | Usage Level | Operating Temperature | Packaging | Series | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Memory Size | Number of Ports | Operating Mode | Supply Current-Max | Access Time | Architecture | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Product Type | Density | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Product Category | Length | Width |
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 GS882Z18CGB-333I GSI Technology | In Stock | - | - | - | BGA-119 | - | - | - | GSI Technology | - | SDR | 42 | - | Parallel | GSI Technology | - | 333 MHz | 222.2@Flow-Through/333@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | - | Surface Mount | SMD/SMT | 18 Bit | 512 kWords | - | - | - | - | - | - | - | - | - | - | - | - | - | Details | - | FBGA | 3.6 V | 2.3 V | - | Synchronous | NBT SRAM | 2.5, 3.3 V | Industrial grade | -40 to 85 °C | Tray | GS882Z18CGB | - | - | - | NBT Pipeline/Flow Through | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 119 | - | - | - | - | - | - | 9 Mbit | 2 | - | 185 mA, 240 mA | 4.5 ns | Flow-Through/Pipelined | 512 k x 18 | - | - | - | 18 Bit | SRAM | 9 Mbit | - | - | Industrial | - | - | - | - | SRAM | - | - | ||
GS880E32CGT-150V GSI Technology | In Stock | - | - | 8 Weeks | TQFP-100 | YES | 100 | 7.5 ns | GSI Technology | - | - | 66 | GSI TECHNOLOGY | Parallel | GSI Technology | GS880E32CGT-150V | 150 MHz | 133.3@Flow-Through/150@Pipelined MHz | 2, 2.7 V | + 70 C | SDR | 1.7, 2.3 V | 0 C | Yes | 3 | - | SMD/SMT | 32 Bit | 262144 words | 256000 | 70 °C | - | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.38 | Details | Yes | TQFP | 2.7 V | 1.7 V | 1.8 V | Synchronous | SyncBurst | 1.8, 2.5 V | - | 0 to 70 °C | Tray | GS880E32CGT | e3 | Yes | 3A991.B.2.B | DCD | PURE MATTE TIN | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2 V | 1.8/2.5 V | COMMERCIAL | 1.7 V | 9 Mbit | - | SYNCHRONOUS | 110 mA, 125 mA | 7.5@Flow-Through/3.8 | - | 256 k x 32 | 3-STATE | 1.6 mm | 32 | - | SRAM | - | 0.025 A | 8 | - | PARALLEL | COMMON | CACHE SRAM | 1.7 V | SRAM | 20 mm | 14 mm | ||
GS81302Q19E-250I GSI Technology | In Stock | - | - | 12 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | - | QDR | 10 | GSI TECHNOLOGY | Parallel | GSI Technology | GS81302Q19E-250I | 250 MHz | 250 MHz | 1.9 V | + 85 C | QDR-II | 1.7 V | - 40 C | Yes | - | Surface Mount | SMD/SMT | 18 Bit | 8 MWords | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, | - | RECTANGULAR | GRID ARRAY, LOW PROFILE | Not Recommended | BGA | NOT SPECIFIED | 5.33 | - | No | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaQuad-II+ | 1.8000 V | Industrial grade | -40 to 100 °C | Tray | GS81302Q19E | - | No | 3A991.B.2.B | SigmaQuad-II+ B2 | - | PIPELINED ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | - | INDUSTRIAL | 1.7 V | 144 Mbit | 2 | SYNCHRONOUS | 1.07 A | - | Pipelined | 8 M x 18 | - | 1.5 mm | 18 | 22 Bit | SRAM | 144 Mbit | - | 150994944 bit | Industrial | PARALLEL | - | QDR SRAM | - | SRAM | 17 mm | 15 mm | ||
GS81302D18GE-350 GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | GSI Technology | - | QDR | 10 | - | Parallel | GSI Technology | - | 350 MHz | 350 MHz | 1.9 V | + 70 C | QDR-II | 1.7 V | 0 C | Yes | - | Surface Mount | SMD/SMT | 18 Bit | 8 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | Details | - | FBGA | 1.9 V | 1.7 V | - | Synchronous | SigmaQuad-II | 1.8000 V | Commercial grade | 0 to 85 °C | Tray | GS81302D18GE | - | - | - | SigmaQuad-II | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | 144 Mbit | 2 | - | 940 mA | - | Pipelined | 8 M x 18 | - | - | - | 21 Bit | SRAM | 144 Mbit | - | - | Commercial | - | - | - | - | SRAM | - | - | ||
GS81302TT11E-450M GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | GSI Technology | - | DDR | 10 | - | Parallel | GSI Technology | - | 450 MHz | 450 MHz | - | + 125 C | DDR-II | - | - 55 C | Yes | - | Surface Mount | SMD/SMT | 9 Bit | 16 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | FBGA | 1.9 V | 1.7 V | - | Synchronous | SigmaDDR-II+ | 1.8000 V | Military grade | -55 to 125 °C | Tray | GS81302TT11E | - | - | - | SigmaDDR-II+ | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | 144 Mbit | 1 | - | - | - | Pipelined | 16 M x 9 | - | - | - | 23 Bit | SRAM | 144 Mbit | - | - | Military | - | - | - | - | SRAM | - | - | ||
GS81302TT37E-450 GSI Technology | In Stock | - | - | 12 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | - | DDR | 10 | GSI TECHNOLOGY | Parallel | GSI Technology | GS81302TT37E-450 | 450 MHz | 450 MHz | 1.9 V | + 70 C | DDR-II | 1.7 V | 0 C | Yes | - | Surface Mount | SMD/SMT | 36 Bit | 4 MWords | 4000000 | 70 °C | - | PLASTIC/EPOXY | LBGA | LBGA, | - | RECTANGULAR | GRID ARRAY, LOW PROFILE | Not Recommended | BGA | NOT SPECIFIED | 5.06 | N | No | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaDDR-II+ | 1.8000 V | Commercial grade | 0 to 85 °C | Tray | GS81302TT37E | - | No | 3A991.B.2.B | SigmaDDR-II+ B2 | - | PIPELINED ARCHITECTURE, LATE WRITE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | - | COMMERCIAL | 1.7 V | 144 Mbit | 1 | SYNCHRONOUS | 1.19 A | - | Pipelined | 4 M x 36 | - | 1.5 mm | 36 | 21 Bit | SRAM | 144 Mbit | - | 150994944 bit | Commercial | PARALLEL | - | DDR SRAM | - | SRAM | 17 mm | 15 mm | ||
GS81284Z18GB-167 GSI Technology | In Stock | - | - | - | BGA-119 | - | - | - | GSI Technology | - | SDR | 10 | - | Parallel | GSI Technology | - | 167 MHz | 125@Flow-Through/167@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | - | Surface Mount | SMD/SMT | 18 Bit | 8 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | Details | - | FBGA | 3.6 V | 2.3 V | - | Synchronous | NBT SRAM | 2.5, 3.3 V | Commercial grade | 0 to 70 °C | Tray | GS81284Z18GB | - | - | - | NBT Pipeline/Flow Through | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 119 | - | - | - | - | - | - | 144 Mbit | 2 | - | 315 mA, 365 mA | 8 ns | Flow-Through/Pipelined | 8 M x 18 | - | - | - | 23 Bit | SRAM | 144 Mbit | - | - | Commercial | - | - | - | - | SRAM | - | - | ||
GS8662TT11BD-450M GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | GSI Technology | - | DDR | 15 | - | Parallel | GSI Technology | - | 450 MHz | 450 MHz | 1.9 V | + 125 C | DDR | 1.7 V | - 55 C | Yes | - | Surface Mount | SMD/SMT | 9 Bit | 8 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | FBGA | 1.9 V | 1.7 V | - | Synchronous | SigmaCIO DDR-II | 1.8000 V | Military grade | -55 to 125 °C | Tray | GS8662TT11BD | - | - | - | SigmaQuad-II+ | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | 72 Mbit | 1 | - | - | - | Pipelined | 8 M x 9 | - | - | - | 22 Bit | SRAM | 72 Mbit | - | - | Military | - | - | - | - | SRAM | - | - | ||
GS816218DGD-333I GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | GSI Technology | - | SDR | 36 | - | Parallel | GSI Technology | - | 333 MHz | 222.2@Flow-Through/333@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | - | Surface Mount | SMD/SMT | 18 Bit | 1 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | Details | - | FBGA | 3.6 V | 2.3 V | - | Synchronous | SyncBurst | 2.5, 3.3 V | Industrial grade | -40 to 100 °C | Tray | GS816218DGD | - | - | - | Pipeline/Flow Through | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | 18 Mbit | 2 | - | 260 mA, 305 mA | 4.5 ns | Flow-Through/Pipelined | 1 M x 18 | - | - | - | 20 Bit | SRAM | 18 Mbit | - | - | Industrial | - | - | - | - | SRAM | - | - | ||
GS8662DT11BGD-500 GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | - | - | QDR | - | - | Parallel | - | - | 500 MHz | 500 MHz | - | + 70 C | - | - | 0 C | - | - | Surface Mount | SMD/SMT | 9 Bit | 8 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | FBGA | 1.9 V | 1.7 V | - | Synchronous | - | 1.8000 V | Commercial grade | 0 to 85 °C | - | GS8662DT11BGD | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | 72 Mbit | 2 | - | 890 mA | - | Pipelined | 8 M x 9 | - | - | - | 21 Bit | - | 72 Mb | - | - | Commercial | - | - | - | - | - | - | - | ||
GS81302T10E-350I GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | GSI Technology | - | DDR | 10 | - | Parallel | GSI Technology | - | 350 MHz | 350 MHz | 1.9 V | + 85 C | DDR-II | 1.7 V | - 40 C | Yes | - | Surface Mount | SMD/SMT | 9 Bit | 16 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | FBGA | 1.9 V | 1.7 V | - | Synchronous | SigmaDDR-II+ | 1.8000 V | Industrial grade | -40 to 100 °C | Tray | GS81302T10E | - | - | - | SigmaDDR-II+ B2 | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | 144 Mbit | 1 | - | 810 mA | - | Pipelined | 16 M x 9 | - | - | - | 23 Bit | SRAM | 144 Mbit | - | - | Industrial | - | - | - | - | SRAM | - | - | ||
GS8662T38BD-450M GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | GSI Technology | - | DDR | 15 | - | Parallel | GSI Technology | - | 450 MHz | 450 MHz | 1.9 V | + 125 C | DDR-II | 1.7 V | - 55 C | Yes | - | Surface Mount | SMD/SMT | 36 Bit | 2 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | FBGA | 1.9 V | 1.7 V | - | Synchronous | SigmaCIO DDR-II | 1.8000 V | Military grade | -55 to 125 °C | Tray | GS8662T38BD | - | - | - | SigmaQuad-II+ | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | 72 Mbit | 1 | - | - | - | Pipelined | 2 M x 36 | - | - | - | 20 Bit | SRAM | 72 Mbit | - | - | Military | - | - | - | - | SRAM | - | - | ||
GS8662Q36BGD-357 GSI Technology | In Stock | - | - | 8 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 357 MHz | QDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8662Q36BGD-357 | 357 MHz | 357 MHz | - | + 70 C | DDR | - | 0 C | Yes | - | Surface Mount | SMD/SMT | 36 Bit | 2 MWords | 2000000 | 70 °C | - | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.34 | Details | Yes | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaQuad-II | 1.8000 V | Commercial grade | 0 to 85 °C | Tray | GS8662Q36BGD | - | - | 3A991.B.2.B | SigmaQuad-II | - | PIPELINED ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | 72 Mbit | 2 | SYNCHRONOUS | 1.195 A | - | Pipelined | 2 M x 36 | 3-STATE | 1.4 mm | 36 | 20 Bit | SRAM | 72 Mbit | - | 75497472 bit | Commercial | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | SRAM | 15 mm | 13 mm | ||
GS8128418B-200I GSI Technology | In Stock | - | - | 10 Weeks | BGA-119 | YES | 119 | 7.5 ns | - | - | SDR | - | GSI TECHNOLOGY | Parallel | GSI Technology | GS8128418B-200I | 200 MHz | 133.3@Flow-Through/200@Pipelined MHz | 2.7, 3.6 V | + 85 C | - | 2.3, 3 V | - 40 C | - | - | Surface Mount | SMD/SMT | 18 Bit | 8 MWords | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, | - | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.19 | - | No | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | - | 2.5, 3.3 V | Industrial grade | -40 to 85 °C | - | GS8128418B | e0 | No | 3A991.B.2.B | - | Tin/Lead (Sn/Pb) | PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3V TO 3.6V SUPPLY | 8542.32.00.41 | - | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2.7 V | - | INDUSTRIAL | 2.3 V | 144 Mbit | 2 | SYNCHRONOUS | 360 mA, 435 mA | 7.5 ns | Flow-Through/Pipelined | 8 M x 18 | - | 1.99 mm | 18 | 23 Bit | - | 144 Mbit | - | 150994944 bit | Industrial | PARALLEL | - | CACHE SRAM | - | - | 22 mm | 14 mm | ||
GS81302T11E-400 GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | GSI Technology | - | DDR | 10 | - | Parallel | GSI Technology | - | 400 MHz | 400 MHz | - | + 70 C | DDR-II | - | 0 C | Yes | - | Surface Mount | SMD/SMT | 9 Bit | 16 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | N | - | FBGA | 1.9 V | 1.7 V | - | Synchronous | SigmaDDR-II+ | 1.8000 V | Commercial grade | 0 to 85 °C | Tray | GS81302T11E | - | - | - | SigmaDDR-II+ | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | 144 Mbit | 1 | - | 895 mA | - | Pipelined | 16 M x 9 | - | - | - | - | SRAM | 144 Mbit | - | - | Commercial | - | - | - | - | SRAM | - | - | ||
GS81302DT38E-500 GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | GSI Technology | - | QDR | 10 | - | Parallel | GSI Technology | - | 500 MHz | 500 MHz | 1.9 V | + 70 C | QDR-II | 1.7 V | 0 C | Yes | - | Surface Mount | SMD/SMT | 36 Bit | 4 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | N | - | FBGA | 1.9 V | 1.7 V | - | Synchronous | SigmaQuad-II+ | 1.8000 V | Commercial grade | 0 to 85 °C | Tray | GS81302DT38E | - | - | - | SigmaQuad-II+ | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | 144 Mbit | 2 | - | 1.66 A | - | Pipelined | 4 M x 36 | - | - | - | 20 Bit | SRAM | 144 Mbit | - | - | Commercial | - | - | - | - | SRAM | - | - | ||
GS880E36CGT-250I GSI Technology | In Stock | - | - | - | TQFP-100 | - | - | - | GSI Technology | - | - | 72 | - | Parallel | GSI Technology | - | 250 MHz | - | - | + 85 C | SDR | - | - 40 C | Yes | - | - | SMD/SMT | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Details | - | - | 3.6 V | 2.3 V | - | - | SyncBurst | - | - | - | Tray | GS880E36CGT | - | - | - | DCD | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 9 Mbit | - | - | 175 mA, 215 mA | 5.5 ns | - | 256 k x 36 | - | - | - | - | SRAM | - | - | - | - | - | - | - | - | SRAM | - | - | ||
GS8642Z36B-300I GSI Technology | In Stock | - | - | 8 Weeks | BGA-119 | YES | 119 | 5.5 ns | GSI Technology | 300 MHz | SDR | 14 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8642Z36B-300I | 300 MHz | 181.8@Flow-Through/300@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | 3 | Surface Mount | SMD/SMT | 36 Bit | 2 MWords | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.18 | - | No | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | NBT SRAM | 2.5, 3.3 V | Industrial grade | -40 to 85 °C | Tray | GS8642Z36B | e0 | No | 3A991.B.2.B | NBT Pipeline/Flow Through | Tin/Lead (Sn/Pb) | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | 72 Mbit | 4 | SYNCHRONOUS | 320 mA, 440 mA | 5.5 ns | Flow-Through/Pipelined | 2 M x 36 | 3-STATE | 1.99 mm | 36 | 21 Bit | SRAM | 72 Mbit | 0.12 A | 75497472 bit | Industrial | PARALLEL | COMMON | ZBT SRAM | 2.3 V | SRAM | 22 mm | 14 mm | ||
GS81302T06GE-350I GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | GSI Technology | - | DDR | 10 | - | Parallel | GSI Technology | - | 350 MHz | 350 MHz | - | + 85 C | DDR-II | - | - 40 C | Yes | - | Surface Mount | SMD/SMT | 8 Bit | 16 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | Details | - | FBGA | 1.9 V | 1.7 V | - | Synchronous | SigmaDDR-II+ | 1.8000 V | Industrial grade | -40 to 100 °C | Tray | GS81302T06GE | - | - | - | SigmaDDR-II+ | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | 144 Mbit | 1 | - | 810 mA | - | Pipelined | 16 M x 8 | - | - | - | 23 Bit | SRAM | 144 Mbit | - | - | Industrial | - | - | - | - | SRAM | - | - | ||
GS81302Q19GE-250I GSI Technology | In Stock | - | - | 12 Weeks | BGA-165 | YES | 165 | 0.45 ns | - | - | QDR | - | GSI TECHNOLOGY | Parallel | GSI Technology | GS81302Q19GE-250I | 250 MHz | 250 MHz | 1.9 V | + 85 C | - | 1.7 V | - 40 C | - | 3 | Surface Mount | SMD/SMT | 18 Bit | 8 MWords | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, | - | RECTANGULAR | GRID ARRAY, LOW PROFILE | Not Recommended | BGA | NOT SPECIFIED | 5.33 | - | Yes | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | - | 1.8000 V | Industrial grade | -40 to 100 °C | - | - | e1 | Yes | 3A991.B.2.B | - | Tin/Silver/Copper (Sn/Ag/Cu) | PIPELINED ARCHITECTURE | 8542.32.00.41 | - | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | - | INDUSTRIAL | 1.7 V | 144 Mbit | 2 | SYNCHRONOUS | 1.07 A | - | Pipelined | 8 M x 18 | - | 1.5 mm | 18 | 22 Bit | - | 144 Mbit | - | 150994944 bit | Industrial | PARALLEL | - | QDR SRAM | - | - | 17 mm | 15 mm |