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Factory Pack QuantityFactory Pack Quantity

Ihs Manufacturer

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Manufacturer Part Number

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Moisture Sensitivity Levels

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Mounting Styles

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Number of Words Code

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Part Package Code

Reflow Temperature-Max (s)

Risk Rank

RoHS

Rohs Code

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Supply Voltage-Min

Supply Voltage-Nom (Vsup)

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Tradename

Typical Operating Supply Voltage

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Terminal Form

Peak Reflow Temperature (Cel)

Number of Functions

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Reach Compliance Code

Pin Count

JESD-30 Code

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Supply Voltage-Max (Vsup)

Power Supplies

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Supply Voltage-Min (Vsup)

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Access Time

Architecture

Organization

Output Characteristics

Seated Height-Max

Memory Width

Address Bus Width

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Standby Current-Max

Memory Density

Screening Level

Parallel/Serial

I/O Type

Memory IC Type

Standby Voltage-Min

Product Category

Length

Width

GS8342S36BGD-400I
GS8342S36BGD-400I

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

-

DDR

-

-

Parallel

-

-

400 MHz

400 MHz

1.9 V

+ 85 C

-

1.7 V

- 40 C

-

-

Surface Mount

SMD/SMT

36 Bit

1 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FBGA

1.9 V

1.7 V

-

Synchronous

-

1.8000 V

Industrial grade

-40 to 100 °C

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

165

-

-

-

-

-

-

36 Mbit

2

-

915 mA

-

Pipelined

1 M x 36

-

-

-

19 Bit

-

36 Mbit

-

-

Industrial

-

-

-

-

-

-

-

GS880E36CGT-150V
GS880E36CGT-150V

GSI Technology

In Stock

-

-

8 Weeks

TQFP-100

YES

100

7.5 ns

GSI Technology

SDR

66

GSI TECHNOLOGY

Parallel

GSI Technology

GS880E36CGT-150V

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

3

Surface Mount

SMD/SMT

36 Bit

256 kWords

256000

70 °C

-

PLASTIC/EPOXY

LQFP

LQFP, QFP100,.63X.87

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.38

Details

Yes

TQFP

2.7 V

1.7 V

1.8 V

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS880E36CGT

e3

Yes

3A991.B.2.B

DCD

PURE MATTE TIN

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2 V

1.8/2.5 V

COMMERCIAL

1.7 V

9 Mbit

2

SYNCHRONOUS

110 mA, 125 mA

7.5 ns

Flow-Through/Pipelined

256 k x 36

3-STATE

1.6 mm

36

18 Bit

SRAM

9 Mbit

0.025 A

9437184 bit

Commercial

PARALLEL

COMMON

CACHE SRAM

1.7 V

SRAM

20 mm

14 mm

GS88236CD-250
GS88236CD-250

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

72

-

Parallel

GSI Technology

-

250 MHz

-

-

+ 70 C

SDR

-

0 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

N

-

-

3.6 V

2.3 V

-

-

SyncBurst

-

-

-

Tray

GS88236CD

-

-

-

Pipeline/Flow Through

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

9 Mbit

-

-

155 mA, 195 mA

5.5 ns

-

256 k x 36

-

-

-

-

SRAM

-

-

-

-

-

-

-

-

SRAM

-

-

GS881E32CGT-150V
GS881E32CGT-150V

GSI Technology

In Stock

-

-

8 Weeks

TQFP-100

YES

100

7.5 ns

GSI Technology

SDR

66

GSI TECHNOLOGY

Parallel

GSI Technology

GS881E32CGT-150V

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

3

Surface Mount

SMD/SMT

32 Bit

256 kWords

256000

70 °C

-

PLASTIC/EPOXY

LQFP

LQFP,

-

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.3

Details

Yes

TQFP

2.7 V

1.7 V

1.8 V

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS881E32CGT

e3

Yes

3A991.B.2.B

DCD Pipeline/Flow Through

Matte Tin (Sn)

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 2.3 V TO 2.7 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2 V

-

COMMERCIAL

1.7 V

9 Mbit

4

SYNCHRONOUS

110 mA, 125 mA

7.5 ns

Flow-Through/Pipelined

256 k x 32

-

1.6 mm

32

18 Bit

SRAM

8 Mbit

-

8388608 bit

Commercial

PARALLEL

-

CACHE SRAM

-

SRAM

20 mm

14 mm

GS81302T11GE-350I
GS81302T11GE-350I

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

DDR

10

-

Parallel

GSI Technology

-

350 MHz

350 MHz

1.9 V

+ 85 C

DDR-II

1.7 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

9 Bit

16 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaDDR-II+

1.8000 V

Industrial grade

-40 to 100 °C

Tray

GS81302T11GE

-

-

-

SigmaDDR-II+

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

144 Mbit

1

-

810 mA

-

Pipelined

16 M x 9

-

-

-

23 Bit

SRAM

144 Mbit

-

-

Industrial

-

-

-

-

SRAM

-

-

GS81302TT06GE-500
GS81302TT06GE-500

GSI Technology

In Stock

-

-

12 Weeks

BGA-165

YES

165

0.45 ns

GSI Technology

-

10

GSI TECHNOLOGY

Parallel

GSI Technology

GS81302TT06GE-500

500 MHz

-

-

+ 70 C

DDR-II

-

0 C

Yes

3

-

SMD/SMT

-

16777216 words

16000000

70 °C

-

PLASTIC/EPOXY

LBGA

LBGA,

-

RECTANGULAR

GRID ARRAY, LOW PROFILE

Not Recommended

BGA

NOT SPECIFIED

5.31

Details

Yes

-

1.9 V

1.7 V

1.8 V

-

SigmaDDR-II+

-

-

-

Tray

GS81302TT06GE

e1

Yes

3A991.B.2.B

SigmaDDR-II+

Tin/Silver/Copper (Sn/Ag/Cu)

PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

1.9 V

-

COMMERCIAL

1.7 V

144 Mbit

-

SYNCHRONOUS

1.07 A

-

-

16 M x 8

-

1.5 mm

8

-

SRAM

-

-

144

-

PARALLEL

-

DDR SRAM

-

SRAM

17 mm

15 mm

GS8662TT37BGD-300
GS8662TT37BGD-300

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

-

DDR

-

-

Parallel

-

-

300 MHz

300 MHz

1.9 V

+ 70 C

-

1.7 V

0 C

-

-

Surface Mount

SMD/SMT

36 Bit

2 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FBGA

1.9 V

1.7 V

-

Synchronous

-

1.8000 V

Commercial grade

0 to 85 °C

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

165

-

-

-

-

-

-

72 Mbit

1

-

625 mA

-

Pipelined

2 M x 36

-

-

-

20 Bit

-

72 Mbit

-

-

Commercial

-

-

-

-

-

-

-

GS81302DT38E-500
GS81302DT38E-500

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

QDR

10

-

Parallel

GSI Technology

-

500 MHz

500 MHz

1.9 V

+ 70 C

QDR-II

1.7 V

0 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

4 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

N

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaQuad-II+

1.8000 V

Commercial grade

0 to 85 °C

Tray

GS81302DT38E

-

-

-

SigmaQuad-II+

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

144 Mbit

2

-

1.66 A

-

Pipelined

4 M x 36

-

-

-

20 Bit

SRAM

144 Mbit

-

-

Commercial

-

-

-

-

SRAM

-

-

GS880E36CGT-250I
GS880E36CGT-250I

GSI Technology

In Stock

-

-

-

TQFP-100

-

-

-

GSI Technology

-

72

-

Parallel

GSI Technology

-

250 MHz

-

-

+ 85 C

SDR

-

- 40 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

-

3.6 V

2.3 V

-

-

SyncBurst

-

-

-

Tray

GS880E36CGT

-

-

-

DCD

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

9 Mbit

-

-

175 mA, 215 mA

5.5 ns

-

256 k x 36

-

-

-

-

SRAM

-

-

-

-

-

-

-

-

SRAM

-

-

GS842Z18CGB-200I
GS842Z18CGB-200I

GSI Technology

In Stock

-

-

-

BGA-119

-

-

-

GSI Technology

-

84

-

Parallel

GSI Technology

-

200 MHz

-

-

+ 85 C

SDR

-

- 40 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

-

3.6 V

2.3 V

-

-

NBT SRAM

-

-

-

Tray

GS842Z18CGB

-

-

-

NBT Pipeline/Flow Through

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

4 Mbit

-

-

150 mA, 175 mA

6.5 ns

-

256 k x 18

-

-

-

-

SRAM

-

-

-

-

-

-

-

-

SRAM

-

-

GS81302T10GE-400I
GS81302T10GE-400I

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

-

-

-

-

Parallel

-

-

400 MHz

-

-

+ 85 C

-

-

- 40 C

-

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

1.9 V

1.7 V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

144 Mbit

-

-

905 mA

-

-

16 M x 9

-

-

-

-

-

-

-

144

-

-

-

-

-

-

-

-

GS81302TT38E-400I
GS81302TT38E-400I

GSI Technology

In Stock

-

-

12 Weeks

BGA-165

YES

165

0.45 ns

GSI Technology

DDR

10

GSI TECHNOLOGY

Parallel

GSI Technology

GS81302TT38E-400I

400 MHz

400 MHz

1.9 V

+ 85 C

DDR-II

1.7 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

4 MWords

4000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA,

-

RECTANGULAR

GRID ARRAY, LOW PROFILE

Not Recommended

BGA

NOT SPECIFIED

5.06

-

No

FBGA

1.9 V

1.7 V

1.8 V

Synchronous

SigmaDDR-II+

1.8000 V

Industrial grade

-40 to 100 °C

Tray

GS81302TT38E

-

No

3A991.B.2.B

SigmaDDR-II+

-

PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

1.9 V

-

INDUSTRIAL

1.7 V

144 Mbit

1

SYNCHRONOUS

1.005 A

-

Pipelined

4 M x 36

-

1.5 mm

36

21 Bit

SRAM

144 Mbit

-

150994944 bit

Industrial

PARALLEL

-

DDR SRAM

-

SRAM

17 mm

15 mm

GS832036AGT-400
GS832036AGT-400

GSI Technology

In Stock

-

-

8 Weeks

TQFP-100

YES

100

4 ns

GSI Technology

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS832036AGT-400

400 MHz

250@Flow-Through/400@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

85 °C

-

PLASTIC/EPOXY

LQFP

LQFP,

-

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.7

Details

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 85 °C

Tray

GS832036AGT

-

-

3A991.B.2.B

Pipeline/Flow Through

-

ALSO OPERATES AT 3.3; SYNCHRONOUS BURST

-

Memory & Data Storage

CMOS

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2.7 V

-

OTHER

2.3 V

36 Mbit

4

SYNCHRONOUS

285 mA, 395 mA

4 ns

Flow-Through/Pipelined

1 M x 36

-

1.6 mm

36

20 Bit

SRAM

36 Mbit

-

37748736 bit

Commercial

PARALLEL

-

CACHE SRAM

-

SRAM

20 mm

14 mm

GS881Z32CGD-200
GS881Z32CGD-200

GSI Technology

In Stock

-

-

8 Weeks

BGA-165

YES

100

6.5 ns

GSI Technology

-

72

GSI TECHNOLOGY

Parallel

GSI Technology

GS881Z32CGD-200

200 MHz

-

-

+ 70 C

SDR

-

0 C

Yes

3

-

SMD/SMT

-

262144 words

256000

70 °C

-

PLASTIC/EPOXY

LQFP

LQFP,

-

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.29

Details

Yes

-

3.6 V

2.3 V

2.5 V

-

NBT SRAM

-

-

-

Tray

GS881Z32CGD

e1

Yes

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2.7 V

-

COMMERCIAL

2.3 V

9 Mbit

-

SYNCHRONOUS

140 mA, 170 mA

6.5 ns

-

256 k x 32

-

1.6 mm

32

-

SRAM

-

-

8388608 bit

-

PARALLEL

-

ZBT SRAM

-

SRAM

20 mm

14 mm

GS71108AU-7
GS71108AU-7

GSI Technology

In Stock

-

-

6 Weeks

-

YES

48

7 ns

GSI Technology

-

240

GSI TECHNOLOGY

-

GSI Technology

GS71108AU-7

-

-

3.6 V

-

-

3 V

-

-

3

Surface Mount

-

8 Bit

128 kWords

128000

70 °C

-

PLASTIC/EPOXY

TFBGA

TFBGA,

-

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

Active

BGA

NOT SPECIFIED

5.22

-

No

FBGA

-

-

3.3 V

Asynchronous

-

3.3000 V

Commercial grade

0 to 70 °C

-

GS71108AGU

-

No

3A991.B.2.B

-

-

-

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

0.75 mm

compliant

48

R-PBGA-B48

Not Qualified

3.6 V

-

COMMERCIAL

3 V

-

1

ASYNCHRONOUS

-

-

-

128KX8

-

1.2 mm

8

17 Bit

SRAM

1 Mbit

-

1048576 bit

Commercial

PARALLEL

-

STANDARD SRAM

-

SRAM

8 mm

6 mm

GS81302S18E-375
GS81302S18E-375

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

DDR

10

-

Parallel

GSI Technology

-

375 MHz

375 MHz

-

+ 70 C

DDR-II

-

0 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

8 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

N

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaSIO DDR-II

1.8000 V

Commercial grade

0 to 85 °C

Tray

GS81302S18E

-

-

-

SigmaSIO DDR-II

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

144 Mbit

2

-

995 mA

-

Pipelined

8 M x 18

-

-

-

-

SRAM

144 Mbit

-

-

Commercial

-

-

-

-

SRAM

-

-

GS864218B-300
GS864218B-300

GSI Technology

In Stock

-

-

8 Weeks

BGA-119

YES

119

5.5 ns

-

SDR

-

GSI TECHNOLOGY

Parallel

GSI Technology

GS864218B-300

300 MHz

181.8@Flow-Through/300@Pipelined MHz

2.7, 3.6 V

+ 70 C

-

2.3, 3 V

0 C

-

3

Surface Mount

SMD/SMT

18 Bit

4 MWords

4000000

70 °C

-

PLASTIC/EPOXY

BGA

BGA,

-

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.17

-

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

-

2.5, 3.3 V

Commercial grade

0 to 70 °C

-

GS864218B

e0

No

3A991.B.2.B

-

Tin/Lead (Sn/Pb)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

-

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2.7 V

-

COMMERCIAL

2.3 V

72 Mbit

2

SYNCHRONOUS

270 mA, 370 mA

5.5 ns

Flow-Through/Pipelined

4MX18

-

1.99 mm

18

22 Bit

-

72 Mbit

-

75497472 bit

Commercial

PARALLEL

-

CACHE SRAM

-

-

22 mm

14 mm

GS8673EQ18BGK-714
GS8673EQ18BGK-714

GSI Technology

In Stock

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

72

-

-

-

-

-

-

-

-

GS8662S09BD-333
GS8662S09BD-333

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

DDR

15

-

Parallel

GSI Technology

-

333 MHz

333 MHz

1.9 V

+ 70 C

DDR

1.7 V

0 C

Yes

-

Surface Mount

SMD/SMT

9 Bit

8 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

N

-

-

1.9 V

1.7 V

-

Synchronous

SigmaSIO DDR-II

1.8000 V

Commercial grade

0 to 85 °C

Tray

GS8662S09BD

-

-

-

SigmaSIO DDR-II

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

72 Mbit

2

-

630 mA

-

Pipelined

8 M x 9

-

-

-

22 Bit

SRAM

72 Mbit

-

-

Commercial

-

-

-

-

SRAM

-

-

GS8161Z18DD-375I
GS8161Z18DD-375I

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

SDR

36

-

Parallel

GSI Technology

-

375 MHz

238@Flow-Through/375@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

1 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FBGA

3.6 V

2.3 V

-

Synchronous

NBT SRAM

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS8161Z18DD

-

-

-

NBT

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

18 Mbit

2

-

270 mA, 340 mA

4.2 ns

Flow-Through/Pipelined

1 M x 18

-

-

-

20 Bit

SRAM

18 Mbit

-

-

Industrial

-

-

-

-

SRAM

-

-