- Organization
- Memory Size
- Mounting Styles
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- Supply Voltage-Max
- Supply Voltage-Min
- Interface Type
- Maximum Operating Temperature
- Minimum Operating Temperature
- Supply Current-Max
- Maximum Clock Frequency
- Manufacturer
Attribute column
Manufacturer
GSI Memory
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Factory Lead Time | Package / Case | Surface Mount | Number of Terminals | Access Time-Max | Brand | Clock Frequency-Max (fCLK) | Data Rate Architecture | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Maximum Clock Frequency | Maximum Clock Rate | Maximum Operating Supply Voltage | Maximum Operating Temperature | Memory Types | Minimum Operating Supply Voltage | Minimum Operating Temperature | Moisture Sensitive | Moisture Sensitivity Levels | Mounting | Mounting Styles | Number of I/O Lines | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Timing Type | Tradename | Typical Operating Supply Voltage | Usage Level | Operating Temperature | Packaging | Series | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Memory Size | Number of Ports | Operating Mode | Supply Current-Max | Access Time | Architecture | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Product Type | Density | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Product Category | Length | Width |
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 GS8322Z72GC-225IV GSI Technology | In Stock | - | - | - | BGA-209 | - | - | - | GSI Technology | - | SDR | 14 | - | Parallel | GSI Technology | - | 225 MHz | 143@Flow-Through/225@Pipelined MHz | 2, 2.7 V | + 85 C | SDR | 1.7, 2.3 V | - 40 C | Yes | - | Surface Mount | SMD/SMT | 72 Bit | 512 kWords | - | - | - | - | - | - | - | - | - | - | - | - | - | Details | - | FBGA | 2.7 V | 1.7 V | - | Synchronous | NBT SRAM | 1.8, 2.5 V | Industrial grade | -40 to 85 °C | Tray | GS8322Z72GC | - | - | - | NBT | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 209 | - | - | - | - | - | - | 36 Mbit | 8 | - | 265 mA, 370 mA | 7 ns | Flow-Through/Pipelined | 512 k x 72 | - | - | - | 19 Bit | SRAM | 36 Mbit | - | - | Industrial | - | - | - | - | SRAM | - | - | ||
GS8662T19BD-300I GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | - | - | DDR | - | - | Parallel | - | - | 300 MHz | 300 MHz | 1.9 V | + 85 C | - | 1.7 V | - 40 C | - | - | Surface Mount | SMD/SMT | 18 Bit | 4 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | FBGA | 1.9 V | 1.7 V | - | Synchronous | - | 1.8000 V | Industrial grade | -40 to 100 °C | - | GS8662T19BD | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | 72 Mbit | 1 | - | 505 mA | - | Pipelined | 4 M x 18 | - | - | - | 21 Bit | - | 72 Mbit | - | - | Industrial | - | - | - | - | - | - | - | ||
GS842Z18CGB-200I GSI Technology | In Stock | - | - | - | BGA-119 | - | - | - | GSI Technology | - | - | 84 | - | Parallel | GSI Technology | - | 200 MHz | - | - | + 85 C | SDR | - | - 40 C | Yes | - | - | SMD/SMT | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Details | - | - | 3.6 V | 2.3 V | - | - | NBT SRAM | - | - | - | Tray | GS842Z18CGB | - | - | - | NBT Pipeline/Flow Through | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 4 Mbit | - | - | 150 mA, 175 mA | 6.5 ns | - | 256 k x 18 | - | - | - | - | SRAM | - | - | - | - | - | - | - | - | SRAM | - | - | ||
GS81302T10GE-400I GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | - | - | - | - | - | Parallel | - | - | 400 MHz | - | - | + 85 C | - | - | - 40 C | - | - | - | SMD/SMT | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1.9 V | 1.7 V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 144 Mbit | - | - | 905 mA | - | - | 16 M x 9 | - | - | - | - | - | - | - | 144 | - | - | - | - | - | - | - | - | ||
GS81302TT38E-400I GSI Technology | In Stock | - | - | 12 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | - | DDR | 10 | GSI TECHNOLOGY | Parallel | GSI Technology | GS81302TT38E-400I | 400 MHz | 400 MHz | 1.9 V | + 85 C | DDR-II | 1.7 V | - 40 C | Yes | - | Surface Mount | SMD/SMT | 36 Bit | 4 MWords | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, | - | RECTANGULAR | GRID ARRAY, LOW PROFILE | Not Recommended | BGA | NOT SPECIFIED | 5.06 | - | No | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaDDR-II+ | 1.8000 V | Industrial grade | -40 to 100 °C | Tray | GS81302TT38E | - | No | 3A991.B.2.B | SigmaDDR-II+ | - | PIPELINED ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | - | INDUSTRIAL | 1.7 V | 144 Mbit | 1 | SYNCHRONOUS | 1.005 A | - | Pipelined | 4 M x 36 | - | 1.5 mm | 36 | 21 Bit | SRAM | 144 Mbit | - | 150994944 bit | Industrial | PARALLEL | - | DDR SRAM | - | SRAM | 17 mm | 15 mm | ||
GS832036AGT-400 GSI Technology | In Stock | - | - | 8 Weeks | TQFP-100 | YES | 100 | 4 ns | GSI Technology | - | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS832036AGT-400 | 400 MHz | 250@Flow-Through/400@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | - | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 85 °C | - | PLASTIC/EPOXY | LQFP | LQFP, | - | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.7 | Details | Yes | TQFP | 3.6 V | 2.3 V | 2.5 V | Synchronous | SyncBurst | 2.5, 3.3 V | Commercial grade | 0 to 85 °C | Tray | GS832036AGT | - | - | 3A991.B.2.B | Pipeline/Flow Through | - | ALSO OPERATES AT 3.3; SYNCHRONOUS BURST | - | Memory & Data Storage | CMOS | QUAD | GULL WING | NOT SPECIFIED | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.7 V | - | OTHER | 2.3 V | 36 Mbit | 4 | SYNCHRONOUS | 285 mA, 395 mA | 4 ns | Flow-Through/Pipelined | 1 M x 36 | - | 1.6 mm | 36 | 20 Bit | SRAM | 36 Mbit | - | 37748736 bit | Commercial | PARALLEL | - | CACHE SRAM | - | SRAM | 20 mm | 14 mm | ||
GS881Z32CGD-200 GSI Technology | In Stock | - | - | 8 Weeks | BGA-165 | YES | 100 | 6.5 ns | GSI Technology | - | - | 72 | GSI TECHNOLOGY | Parallel | GSI Technology | GS881Z32CGD-200 | 200 MHz | - | - | + 70 C | SDR | - | 0 C | Yes | 3 | - | SMD/SMT | - | 262144 words | 256000 | 70 °C | - | PLASTIC/EPOXY | LQFP | LQFP, | - | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.29 | Details | Yes | - | 3.6 V | 2.3 V | 2.5 V | - | NBT SRAM | - | - | - | Tray | GS881Z32CGD | e1 | Yes | 3A991.B.2.B | NBT Pipeline/Flow Through | Tin/Silver/Copper (Sn/Ag/Cu) | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.7 V | - | COMMERCIAL | 2.3 V | 9 Mbit | - | SYNCHRONOUS | 140 mA, 170 mA | 6.5 ns | - | 256 k x 32 | - | 1.6 mm | 32 | - | SRAM | - | - | 8388608 bit | - | PARALLEL | - | ZBT SRAM | - | SRAM | 20 mm | 14 mm | ||
GS882Z36CGB-300I GSI Technology | In Stock | - | - | - | BGA-119 | - | - | - | GSI Technology | - | SDR | 42 | - | Parallel | GSI Technology | - | 300 MHz | 200@Flow-Through/300@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | - | Surface Mount | SMD/SMT | 36 Bit | 256 kWords | - | - | - | - | - | - | - | - | - | - | - | - | - | Details | - | FBGA | 3.6 V | 2.3 V | - | Synchronous | NBT SRAM | 2.5, 3.3 V | Industrial grade | -40 to 85 °C | Tray | GS882Z36CGB | - | - | - | NBT Pipeline/Flow Through | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 119 | - | - | - | - | - | - | 9 Mbit | 4 | - | 185 mA, 245 mA | 5 ns | Flow-Through/Pipelined | 256 k x 36 | - | - | - | 18 Bit | SRAM | 9 Mbit | - | - | Industrial | - | - | - | - | SRAM | - | - | ||
GS81302D19GE-300 GSI Technology | In Stock | - | - | 12 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | - | QDR | 10 | GSI TECHNOLOGY | Parallel | GSI Technology | GS81302D19GE-300 | 300 MHz | 300 MHz | 1.9 V | + 70 C | QDR-II | 1.7 V | 0 C | Yes | 3 | Surface Mount | SMD/SMT | 18 Bit | 8 MWords | 8000000 | 70 °C | - | PLASTIC/EPOXY | LBGA | LBGA, | - | RECTANGULAR | GRID ARRAY, LOW PROFILE | Not Recommended | BGA | NOT SPECIFIED | 5.33 | Details | Yes | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaQuad-II+ | 1.8000 V | Commercial grade | 0 to 85 °C | Tray | GS81302D19GE | e1 | Yes | 3A991.B.2.B | SigmaQuad-II+ B4 | Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5) | PIPELINED ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | - | COMMERCIAL | 1.7 V | 144 Mbit | 2 | SYNCHRONOUS | 815 mA | - | Pipelined | 8 M x 18 | - | 1.5 mm | 18 | 21 Bit | SRAM | 144 Mbit | - | 150994944 bit | Commercial | PARALLEL | - | DDR SRAM | - | SRAM | 17 mm | 15 mm | ||
GS81284Z18B-250I GSI Technology | In Stock | - | - | 10 Weeks | BGA-119 | YES | 119 | 6.5 ns | GSI Technology | - | SDR | 10 | GSI TECHNOLOGY | Parallel | GSI Technology | GS81284Z18B-250I | 250 MHz | 153.8@Flow-Through/250@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | - | Surface Mount | SMD/SMT | 18 Bit | 8 MWords | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, | - | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 4.82 | - | No | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | NBT SRAM | 2.5, 3.3 V | Industrial grade | -40 to 85 °C | Tray | GS81284Z18B | e0 | No | 3A991.B.2.B | NBT Pipeline/Flow Through | Tin/Lead (Sn/Pb) | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES WITH 3.3V | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2.7 V | - | INDUSTRIAL | 2.3 V | 144 Mbit | 2 | SYNCHRONOUS | 390 mA, 490 mA | 6.5 ns | Flow-Through/Pipelined | 8 M x 18 | - | 1.99 mm | 18 | 23 Bit | SRAM | 144 Mbit | - | 150994944 bit | Industrial | PARALLEL | - | ZBT SRAM | - | SRAM | 22 mm | 14 mm | ||
GS8162Z72CGC-200IV GSI Technology | In Stock | - | - | 8 Weeks | BGA-209 | YES | 209 | 6.5 ns | GSI Technology | - | SDR | 21 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8162Z72CGC-200IV | 200 MHz | 153.8@Flow-Through/200@Pipelined MHz | 2, 2.7 V | + 85 C | SDR | 1.7, 2.3 V | - 40 C | Yes | 3 | Surface Mount | SMD/SMT | 72 Bit | 256 kWords | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, | - | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.17 | Details | Yes | BGA | 2.7 V | 1.7 V | 1.8 V | Synchronous | NBT SRAM | 1.8, 2.5 V | Industrial grade | -40 to 85 °C | Tray | GS8162Z72CGC | e1 | Yes | 3A991.B.2.B | NBT | Tin/Silver/Copper (Sn/Ag/Cu) | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES WITH 2.5V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 209 | R-PBGA-B209 | Not Qualified | 2 V | - | INDUSTRIAL | 1.7 V | 18 Mbit | 8 | SYNCHRONOUS | 240 mA, 300 mA | 6.5 ns | Flow-Through/Pipelined | 256 k x 72 | - | 1.7 mm | 72 | 18 Bit | SRAM | 18 Mbit | - | 18874368 bit | Industrial | PARALLEL | - | ZBT SRAM | - | SRAM | 22 mm | 14 mm | ||
GS8642Z72C-167 GSI Technology | In Stock | - | - | 8 Weeks | BGA-209 | YES | 209 | 8 ns | GSI Technology | 167 MHz | SDR | 14 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8642Z72C-167 | 167 MHz | 125@Flow-Through/167@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | 3 | Surface Mount | SMD/SMT | 72 Bit | 1 MWords | 1000000 | 70 °C | - | PLASTIC/EPOXY | LBGA | LBGA, BGA209,11X19,40 | BGA209,11X19,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.17 | N | No | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | NBT SRAM | 2.5, 3.3 V | Commercial grade | 0 to 70 °C | Tray | GS8642Z72C | - | No | 3A991.B.2.B | NBT Pipeline/Flow Through | - | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 209 | R-PBGA-B209 | Not Qualified | 2.7 V | 2.5/3.3 V | COMMERCIAL | 2.3 V | 72 Mbit | 8 | SYNCHRONOUS | 270 mA, 340 mA | 8 ns | Flow-Through/Pipelined | 1 M x 72 | 3-STATE | 1.7 mm | 72 | 20 Bit | SRAM | 72 Mbit | 0.1 A | 75497472 bit | Commercial | PARALLEL | COMMON | ZBT SRAM | 2.3 V | SRAM | 22 mm | 14 mm | ||
GS8662D18BGD-250 GSI Technology | In Stock | - | - | 8 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 250 MHz | QDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8662D18BGD-250 | 250 MHz | 250 MHz | 1.9 V | + 70 C | DDR | 1.7 V | 0 C | Yes | 3 | Surface Mount | SMD/SMT | 18 Bit | 4 MWords | 4000000 | 70 °C | - | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.21 | Details | Yes | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaQuad-II | 1.8000 V | Commercial grade | 0 to 85 °C | Tray | GS8662D18BGD | e1 | Yes | 3A991.B.2.B | SigmaQuad-II | Tin/Silver/Copper (Sn/Ag/Cu) | PIPELINED ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | 72 Mbit | 2 | SYNCHRONOUS | 500 mA | - | Pipelined | 4 M x 18 | 3-STATE | 1.4 mm | 18 | 20 Bit | SRAM | 72 Mbit | - | 75497472 bit | Commercial | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | SRAM | 15 mm | 13 mm | ||
GS8182T18BGD-250I GSI Technology | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 250 MHz | 1.9 V | - | - | 1.7 V | - | - | - | - | - | 18 Bit | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | FBGA | - | - | - | Synchronous | - | 1.8000 V | - | -40 to 85 °C | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | - | - | - | - | 0.45 | - | - | - | - | - | - | - | - | - | 18 | - | - | - | - | - | - | - | - | ||
GS864036GT-200I GSI Technology | In Stock | - | - | 8 Weeks | TQFP-100 | YES | 100 | 7.5 ns | GSI Technology | - | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS864036GT-200I | 200 MHz | 133.3@Flow-Through/200@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | 3 | Surface Mount | SMD/SMT | 36 Bit | 2 MWords | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | LQFP, | - | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.37 | Details | Yes | TQFP | 3.6 V | 2.3 V | 2.5 V | Synchronous | SyncBurst | 2.5, 3.3 V | Industrial grade | -40 to 85 °C | Tray | GS864036GT | e3 | Yes | 3A991.B.2.B | Pipeline/Flow Through | PURE MATTE TIN | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.7 V | - | INDUSTRIAL | 2.3 V | 72 Mbit | 4 | SYNCHRONOUS | 250 mA, 330 mA | 7.5 ns | Flow-Through/Pipelined | 2 M x 36 | - | 1.6 mm | 36 | 21 Bit | SRAM | 72 Mbit | - | 75497472 bit | Industrial | PARALLEL | - | CACHE SRAM | - | SRAM | 20 mm | 14 mm | ||
GS881Z36CGD-150 GSI Technology | In Stock | - | - | 8 Weeks | BGA-165 | YES | 100 | 7.5 ns | - | - | SDR | - | GSI TECHNOLOGY | Parallel | GSI Technology | GS881Z36CGD-150 | 150 MHz | 133.3@Flow-Through/150@Pipelined MHz | 2.7, 3.6 V | + 70 C | - | 2.3, 3 V | 0 C | - | 3 | Surface Mount | SMD/SMT | 36 Bit | 256 kWords | 256000 | 70 °C | - | PLASTIC/EPOXY | LQFP | LQFP, | - | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 4.81 | - | Yes | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | - | 2.5, 3.3 V | Commercial grade | 0 to 70 °C | - | - | e1 | Yes | 3A991.B.2.B | - | Tin/Silver/Copper (Sn/Ag/Cu) | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY | 8542.32.00.41 | - | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 165 | R-PQFP-G100 | Not Qualified | 2.7 V | - | COMMERCIAL | 2.3 V | 9 Mbit | 1 | SYNCHRONOUS | 130 mA, 140 mA | 7.5 ns | Flow-Through/Pipelined | 256 k x 36 | - | 1.6 mm | 36 | 18 Bit | - | 9 Mbit | - | 9437184 bit | Commercial | PARALLEL | - | ZBT SRAM | - | - | 20 mm | 14 mm | ||
GS74108AX-12I GSI Technology | In Stock | - | - | 6 Weeks | - | YES | 48 | 12 ns | - | - | - | - | GSI TECHNOLOGY | - | GSI Technology | GS74108AX-12I | - | - | - | - | - | - | - | - | 3 | - | - | - | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Not Recommended | BGA | NOT SPECIFIED | 5.18 | - | No | - | - | - | 3.3 V | - | - | - | - | - | - | - | - | No | 3A991.B.2.B | - | - | - | 8542.32.00.41 | - | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.75 mm | compliant | 48 | R-PBGA-B48 | Not Qualified | 3.6 V | - | INDUSTRIAL | 3 V | - | - | ASYNCHRONOUS | - | - | - | 512KX8 | - | 1.2 mm | 8 | - | - | - | - | 4194304 bit | - | PARALLEL | - | STANDARD SRAM | - | - | 10 mm | 6 mm | ||
GS832236AGD-150I GSI Technology | In Stock | - | - | 8 Weeks | BGA-165 | YES | 165 | 7.5 ns | GSI Technology | 150 MHz | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS832236AGD-150I | 150 MHz | 133@Flow-Through/150@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | 3 | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.12 | Details | Yes | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | SyncBurst | 2.5, 3.3 V | Industrial grade | -40 to 100 °C | Tray | GS832236AGD | e1 | Yes | 3A991.B.2.B | Pipeline/Flow Through | Tin/Silver/Copper (Sn/Ag/Cu) | ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | 36 Mbit | 4 | SYNCHRONOUS | 210 mA, 220 mA | 7.5 ns | Flow-Through/Pipelined | 1 M x 36 | 3-STATE | 1.4 mm | 36 | 20 Bit | SRAM | 36 Mbit | 0.04 A | 37748736 bit | Industrial | PARALLEL | COMMON | CACHE SRAM | 2.3 V | SRAM | 15 mm | 13 mm | ||
GS74104AGP-12 GSI Technology | In Stock | - | - | 6 Weeks | - | YES | 44 | 12 ns | - | - | - | - | GSI TECHNOLOGY | - | GSI Technology | GS74104AGP-12 | - | - | - | - | - | - | - | - | 3 | - | - | - | 1048576 words | 1000000 | 70 °C | - | PLASTIC/EPOXY | TSOP2 | TSOP2, | - | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Not Recommended | TSOP2 | NOT SPECIFIED | 5.33 | - | Yes | - | - | - | 3.3 V | - | - | - | - | - | - | - | e3 | Yes | 3A991.B.2.B | - | PURE MATTE TIN | - | 8542.32.00.41 | - | CMOS | DUAL | GULL WING | 260 | 1 | 0.8 mm | compliant | 44 | R-PDSO-G44 | Not Qualified | 3.6 V | - | COMMERCIAL | 3 V | - | - | ASYNCHRONOUS | - | - | - | 1MX4 | - | 1.2 mm | 4 | - | - | - | - | 4194304 bit | - | PARALLEL | - | STANDARD SRAM | - | - | 18.41 mm | 10.16 mm | ||
GS8182R36BD-300I GSI Technology | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |