-

-

BGA-165

-

-

-

GSI Technology

-

DDR

15

-

Parallel

GSI Technology

-

400 MHz

400 MHz

-

+ 70 C

DDR

-

0 C

Yes

-

Surface Mount

SMD/SMT

9 Bit

8 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaDDR-II+

1.8000 V

Commercial grade

0 to 85 °C

Tray

GS8662TT11BGD

-

-

-

SigmaQuad-II+

-

85 °C

0 °C

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

1.8 V

-

-

-

-

72 Mbit

1

-

625 mA

-

Pipelined

8 M x 9

-

-

-

22 b

SRAM

72 Mbit

-

-

Commercial

-

-

-

-

SRAM

-

-

No

-

8 Weeks

BGA-119

YES

119

5 ns

GSI Technology

333 MHz

SDR

14

GSI TECHNOLOGY

Parallel

GSI Technology

GS8322Z18AB-333V

333 MHz

200@Flow-Through/333@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

2 MWords

2000000

70 °C

-

PLASTIC/EPOXY

BGA

BGA, BGA119,7X17,50

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

Active

BGA

-

5.27

N

No

FBGA

2.7 V

1.7 V

1.8 V

Synchronous

NBT SRAM

1.8, 2.5 V

Commercial grade

0 to 85 °C

Tray

GS8322Z18AB

-

-

3A991.B.2.B

NBT

-

85 °C

0 °C

ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

-

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

-

2 V

1.8/2.5 V

COMMERCIAL

1.7 V

36 Mbit

2

SYNCHRONOUS

245 mA, 330 mA

5 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.99 mm

18

21 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

1.7 V

SRAM

22 mm

14 mm

No

-

8 Weeks

BGA-165

YES

165

0.45 ns

GSI Technology

-

-

15

GSI TECHNOLOGY

Parallel

GSI Technology

GS8662S08BGD-400I

400 MHz

-

-

+ 85 C

DDR

-

- 40 C

Yes

-

-

SMD/SMT

-

8388608 words

8000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA,

-

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.71

Compliant

Yes

-

1.9 V

1.7 V

1.8 V

-

SigmaSIO DDR-II

-

-

-

Bulk

GS8662S08BGD

-

-

3A991.B.2.B

SigmaSIO DDR-II

-

100 °C

-40 °C

PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

1.8 V

1.9 V

-

INDUSTRIAL

1.7 V

72 Mbit

2

SYNCHRONOUS

745 mA

-

-

8 M x 8

-

1.4 mm

8

22 b

SRAM

72 Mb

-

72

-

PARALLEL

-

STANDARD SRAM

-

SRAM

15 mm

13 mm

No

-

-

-

-

-

-

-

-

DDR

-

-

-

-

-

-

400 MHz

1.9 V

-

-

1.7 V

-

-

-

Surface Mount

-

18 Bit

1 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Compliant

-

FBGA

-

-

-

Synchronous

-

1.8000 V

Industrial grade

-40 to 85 °C

-

-

-

-

-

-

-

85 °C

-40 °C

-

-

-

-

-

-

-

-

-

-

165

-

-

1.8 V

-

-

-

-

-

1

-

-

-

Pipelined

-

-

-

-

20 Bit

-

18 Mbit

-

-

Industrial

-

-

-

-

-

-

-

No

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

85 °C

-40 °C

-

-

-

-

-

-

-

-

-

-

-

-

-

1.8 V

-

-

-

-

-

1

-

-

-

-

-

-

-

-

20 b

-

18 Mb

-

-

-

-

-

-

-

-

-

-

No

-

-

BGA-165

-

-

-

-

-

SDR

-

-

Parallel

-

-

333 MHz

222.2@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 85 C

-

2.3, 3 V

- 40 C

-

-

Surface Mount

SMD/SMT

18 Bit

2 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Compliant

-

FBGA

3.6 V

2.3 V

-

Synchronous

-

2.5, 3.3 V

Industrial grade

-40 to 100 °C

Bulk

-

-

-

-

-

-

100 °C

-40 °C

-

-

-

-

-

-

-

-

-

-

165

-

-

-

-

-

-

-

36 Mbit

2

-

255 mA, 340 mA

4.5 ns

Flow-Through/Pipelined

2 M x 18

-

-

-

21 Bit

-

36 Mbit

-

-

Industrial

-

-

-

-

-

-

-

No

-

-

BGA-165

-

-

-

GSI Technology

-

SDR

15

-

Parallel

GSI Technology

-

250 MHz

153.8@Flow-Through/250@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

2 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

N

-

FBGA

2.7 V

1.7 V

-

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS864436E

-

-

-

Synchronous Burst

-

70 °C

0 °C

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

-

72 Mbit

4

-

270 mA, 400 mA

6.5 ns

Flow-Through/Pipelined

2 M x 36

-

-

-

21 Bit

SRAM

72 Mbit

-

-

Commercial

-

-

-

-

SRAM

-

-

No

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

70 °C

0 °C

-

-

-

-

-

-

-

-

-

-

-

-

-

1.8 V

-

-

-

-

-

1

-

-

-

-

-

-

-

-

19 b

-

18 Mb

-

-

-

-

-

-

-

-

-

-

No

-

-

BGA-165

-

-

-

GSI Technology

-

QDR

15

-

Parallel

GSI Technology

-

500 MHz

500 MHz

1.9 V

+ 70 C

DDR

1.7 V

0 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

2 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

N

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaQuad-II+

1.8000 V

Commercial grade

0 to 85 °C

Tray

GS8342D20BD

-

-

-

SigmaQuad-II+

-

85 °C

0 °C

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

1.8 V

-

-

-

-

36 Mbit

2

-

855 mA

-

Pipelined

2 M x 18

-

-

-

19 Bit

SRAM

36 Mbit

-

-

Commercial

-

-

-

-

SRAM

-

-

No

-

8 Weeks

BGA-165

YES

165

6.5 ns

GSI Technology

-

-

72

GSI TECHNOLOGY

Parallel

GSI Technology

GS88218CGD-200I

200 MHz

-

-

+ 85 C

SDR

-

- 40 C

Yes

3

-

SMD/SMT

-

524288 words

512000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA,

-

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.13

Details

Yes

-

3.6 V

2.3 V

2.5 V

-

SyncBurst

-

-

-

Tray

GS88218CGD

e1

Yes

3A991.B.2.B

Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

-40 °C

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

-

2.7 V

-

INDUSTRIAL

2.3 V

9 Mbit

2

SYNCHRONOUS

150 mA, 175 mA

6.5 ns

-

512 k x 18

-

1.4 mm

18

19 b

SRAM

9 Mb

-

9437184 bit

-

PARALLEL

-

CACHE SRAM

-

SRAM

15 mm

13 mm

No

-

-

BGA-165

-

-

-

GSI Technology

-

SDR

66

-

Parallel

GSI Technology

-

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

512 kWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Compliant

-

FBGA

2.7 V

1.7 V

-

Synchronous

NBT SRAM

1.8, 2.5 V

Industrial grade

-40 to 85 °C

Tray

GS881Z18CD

-

-

-

NBT

-

85 °C

-40 °C

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

-

9 Mbit

1

-

145 mA, 185 mA

5.5 ns

Flow-Through/Pipelined

512 k x 18

-

-

-

18 Bit

SRAM

9 Mbit

-

-

Industrial

-

-

-

-

SRAM

-

-

No

-

-

BGA-165

-

-

-

GSI Technology

-

DDR

15

-

Parallel

GSI Technology

-

400 MHz

400 MHz

-

+ 85 C

DDR

-

- 40 C

Yes

-

Surface Mount

SMD/SMT

9 Bit

4 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaCIO DDR-II

1.8000 V

Industrial grade

-40 to 100 °C

Tray

GS8342R09BGD

-

-

-

SigmaDDR-II B4

-

100 °C

-40 °C

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

1.8 V

-

-

-

-

36 Mbit

1

-

610 mA

-

Pipelined

4 M x 9

-

-

-

20 Bit

SRAM

36 Mbit

-

-

Industrial

-

-

-

-

SRAM

-

-

No

-

-

BGA-165

-

-

-

GSI Technology

-

QDR

15

-

Parallel

GSI Technology

-

500 MHz

500 MHz

1.9 V

+ 70 C

DDR

1.7 V

0 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

1 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaQuad-II+

1.8000 V

Commercial grade

0 to 70 °C

Tray

GS8342D38BGD

-

-

-

SigmaQuad-II+

-

70 °C

0 °C

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

1.8 V

-

-

-

-

36 Mbit

2

-

1.115 A

-

Pipelined

1 M x 36

-

-

-

18 Bit

SRAM

36 Mbit

-

-

Commercial

-

-

-

-

SRAM

-

-

No

-

8 Weeks

BGA-165

YES

165

0.45 ns

-

-

DDR

-

GSI TECHNOLOGY

Parallel

GSI Technology

GS8662T10BGD-350

350 MHz

350 MHz

1.9 V

+ 70 C

-

1.7 V

0 C

-

-

Surface Mount

SMD/SMT

9 Bit

8 MWords

8000000

70 °C

-

PLASTIC/EPOXY

LBGA

LBGA,

-

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.49

Compliant

Yes

FBGA

1.9 V

1.7 V

1.8 V

Synchronous

-

1.8000 V

Commercial grade

0 to 85 °C

Bulk

-

-

-

3A991.B.2.B

-

-

85 °C

0 °C

PIPELINED ARCHITECTURE, LATE WRITE

8542.32.00.41

-

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

1.8 V

1.9 V

-

COMMERCIAL

1.7 V

72 Mbit

1

SYNCHRONOUS

590 mA

-

Pipelined

8 M x 9

-

1.4 mm

9

22 Bit

-

72 Mbit

-

75497472 bit

Commercial

PARALLEL

-

DDR SRAM

-

-

15 mm

13 mm

No

-

8 Weeks

BGA-165

YES

165

7.5 ns

GSI Technology

150 MHz

SDR

14

GSI TECHNOLOGY

Parallel

GSI Technology

GS8322Z36AD-150IV

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

-

5.12

Compliant

No

FBGA

2.7 V

1.7 V

1.8 V

Synchronous

NBT SRAM

1.8, 2.5 V

Industrial grade

-40 to 100 °C

Tray

GS8322Z36AD

-

-

3A991.B.2.B

NBT

-

100 °C

-40 °C

ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

-

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

-

2 V

1.8/2.5 V

INDUSTRIAL

1.7 V

36 Mbit

4

SYNCHRONOUS

220 mA, 230 mA

7.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

1.7 V

SRAM

15 mm

13 mm

No

-

-

BGA-165

-

-

-

GSI Technology

-

QDR

18

-

Parallel

GSI Technology

-

375 MHz

375 MHz

-

+ 85 C

DDR

-

- 40 C

Yes

-

Surface Mount

SMD/SMT

8 Bit

2 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Compliant

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaQuad-II

1.8000 V

Industrial grade

-40 to 85 °C

Tray

GS8182D08BD

-

-

-

SigmaQuad-II

-

85 °C

-40 °C

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

1.8 V

-

-

-

-

18 Mbit

2

-

690 mA

-

Pipelined

2 M x 8

-

-

-

19 Bit

SRAM

18 Mbit

-

-

Industrial

-

-

-

-

SRAM

-

-

No

-

-

BGA-165

-

-

-

GSI Technology

-

DDR

15

-

Parallel

GSI Technology

-

450 MHz

450 MHz

1.9 V

+ 85 C

DDR

1.7 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

9 Bit

8 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaDDR-II+

1.8000 V

Industrial grade

-40 to 100 °C

Tray

GS8662T10BGD

-

-

-

SigmaDDR-II+ B2

-

100 °C

-40 °C

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

1.8 V

-

-

-

-

72 Mbit

1

-

705 mA

-

Pipelined

8 M x 9

-

-

-

22 Bit

SRAM

72 Mbit

-

-

Industrial

-

-

-

-

SRAM

-

-

No

-

-

-

-

-

-

-

-

DDR

-

-

-

-

-

-

375 MHz

1.9 V

-

-

1.7 V

-

-

-

Surface Mount

-

9 Bit

2 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Compliant

-

FBGA

-

-

-

Synchronous

-

1.8000 V

Commercial grade

0 to 70 °C

-

-

-

-

-

-

-

70 °C

0 °C

-

-

-

-

-

-

-

-

-

-

165

-

-

1.8 V

-

-

-

-

-

1

-

-

-

Pipelined

-

-

-

-

19 Bit

-

18 Mbit

-

-

Commercial

-

-

-

-

-

-

-

No

-

-

-

-

-

-

-

-

QDR

-

-

-

-

-

-

333 MHz

1.9 V

-

-

1.7 V

-

-

-

Surface Mount

-

8 Bit

8 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Compliant

-

FBGA

-

-

-

Synchronous

-

1.8000 V

Industrial grade

-40 to 100 °C

Bulk

-

-

-

-

-

-

100 °C

-40 °C

-

-

-

-

-

-

-

-

-

-

165

-

-

1.8 V

-

-

-

-

-

2

-

-

-

Pipelined

-

-

-

-

22 Bit

-

72 Mbit

-

-

Industrial

-

-

-

-

-

-

-

No

-

8 Weeks

BGA-119

YES

119

5.5 ns

GSI Technology

-

SDR

14

GSI TECHNOLOGY

Parallel

GSI Technology

GS864236B-300

300 MHz

181.8@Flow-Through/300@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

3

Surface Mount

SMD/SMT

36 Bit

2 MWords

2000000

70 °C

-

PLASTIC/EPOXY

BGA

BGA,

-

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.18

N

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 70 °C

Tray

GS864236B

e0

No

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

Tin/Lead (Sn/Pb)

70 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

-

2.7 V

-

COMMERCIAL

2.3 V

72 Mbit

4

SYNCHRONOUS

300 mA, 420 mA

5.5 ns

Flow-Through/Pipelined

2 M x 36

-

1.99 mm

36

21 Bit

SRAM

72 Mbit

-

75497472 bit

Commercial

PARALLEL

-

CACHE SRAM

-

SRAM

22 mm

14 mm

No