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Factory Pack QuantityFactory Pack Quantity

Ihs Manufacturer

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Manufacturer Part Number

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Number of Words Code

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Supply Voltage-Min (Vsup)

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Address Bus Width

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Memory IC Type

Standby Voltage-Min

Product Category

Length

Width

GS88136CD-150I
GS88136CD-150I

GSI Technology

In Stock

-

-

8 Weeks

BGA-165

YES

165

-

GSI Technology

-

-

72

GSI TECHNOLOGY

Parallel

GSI Technology

GS88136CD-150I

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

-

SMD/SMT

36 Bit

262144 words

256000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA,

-

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.14

-

No

FBGA

3.6 V

2.3 V

3.3 V

-

SyncBurst

2.5, 3.3 V

-

-40 to 85 °C

Tray

GS88136CD

-

-

3A991.B.2.B

Pipeline/Flow Through

-

ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY, FLOW THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

3.6 V

-

INDUSTRIAL

3 V

9 Mbit

-

SYNCHRONOUS

150 mA, 160 mA

7.5@Flow-Through/3.8

-

256 k x 36

-

1.4 mm

36

-

SRAM

-

-

9

-

SERIAL

-

CACHE SRAM

-

SRAM

15 mm

13 mm

GS81302TT10GE-300
GS81302TT10GE-300

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

-

10

-

Parallel

GSI Technology

-

300 MHz

300 MHz

1.9 V

+ 70 C

DDR-II

1.7 V

0 C

Yes

-

SMD/SMT

9 Bit

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaDDR-II+

1.8000 V

Commercial grade

0 to 85 °C

Tray

GS81302TT10GE

-

-

-

SigmaDDR-II+ B2

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

144 Mbit

-

-

690 mA

0.45

-

16 M x 9

-

-

-

-

SRAM

-

-

144

Commercial

-

-

-

-

SRAM

-

-

GS8662Q10BD-250I
GS8662Q10BD-250I

GSI Technology

In Stock

-

-

8 Weeks

BGA-165

YES

165

0.45 ns

-

250 MHz

-

-

GSI TECHNOLOGY

Parallel

GSI Technology

GS8662Q10BD-250I

250 MHz

250 MHz

1.9 V

+ 85 C

-

1.7 V

- 40 C

-

-

SMD/SMT

9 Bit

8 MWords

8000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.48

-

No

FBGA

1.9 V

1.7 V

1.8 V

Synchronous

-

1.8000 V

Industrial grade

-40 to 100 °C

-

-

e0

No

3A991.B.2.B

-

Tin/Lead (Sn/Pb)

PIPELINED ARCHITECTURE

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

1.9 V

1.5/1.8,1.8 V

INDUSTRIAL

1.7 V

72 Mbit

-

SYNCHRONOUS

730 mA

0.45

-

8 M x 9

3-STATE

1.4 mm

9

-

-

-

0.25 A

72

Industrial

PARALLEL

SEPARATE

DDR SRAM

1.7 V

-

15 mm

13 mm

GS882Z36CGB-150V
GS882Z36CGB-150V

GSI Technology

In Stock

-

-

-

BGA-119

-

-

-

GSI Technology

-

SDR

42

-

Parallel

GSI Technology

-

150 MHz

-

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

256 kWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

2.7 V

1.7 V

-

Synchronous

NBT SRAM

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS882Z36CGB

-

-

-

NBT

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

119

-

-

-

-

-

-

9 Mbit

4

-

110 mA, 125 mA

7.5 ns

Flow-Through/Pipelined

256 k x 36

-

-

-

-

SRAM

9 Mbit

-

-

Commercial

-

-

-

-

SRAM

-

-

GS81302TT10E-400
GS81302TT10E-400

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

DDR

10

-

Parallel

GSI Technology

-

400 MHz

400 MHz

1.9 V

+ 70 C

DDR-II

1.7 V

0 C

Yes

Surface Mount

SMD/SMT

9 Bit

16 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

N

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaDDR-II+

1.8000 V

Commercial grade

0 to 70 °C

Tray

GS81302TT10E

-

-

-

SigmaDDR-II+ B2

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

144 Mbit

1

-

895 mA

-

Pipelined

16 M x 9

-

-

-

23 Bit

SRAM

144 Mbit

-

-

Commercial

-

-

-

-

SRAM

-

-

GS81302TT06GE-450
GS81302TT06GE-450

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

-

10

-

Parallel

GSI Technology

-

450 MHz

450 MHz

1.9 V

+ 70 C

DDR-II

1.7 V

0 C

Yes

-

SMD/SMT

8 Bit

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaDDR-II+

1.8000 V

Commercial grade

0 to 85 °C

Tray

GS81302TT06GE

-

-

-

SigmaDDR-II+

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

144 Mbit

-

-

1 A

0.45

-

16 M x 8

-

-

-

-

SRAM

-

-

144

Commercial

-

-

-

-

SRAM

-

-

GS88236CB-250V
GS88236CB-250V

GSI Technology

In Stock

-

-

8 Weeks

BGA-119

YES

119

5.5 ns

GSI Technology

-

SDR

42

GSI TECHNOLOGY

Parallel

GSI Technology

GS88236CB-250V

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

256 kWords

256000

70 °C

-

PLASTIC/EPOXY

BGA

BGA,

-

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.13

N

No

FBGA

2.7 V

1.7 V

1.8 V

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS88236CB

e0

No

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

Tin/Lead (Sn/Pb)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2 V

-

COMMERCIAL

1.7 V

9 Mbit

4

SYNCHRONOUS

140 mA, 180 mA

5.5 ns

Flow-Through/Pipelined

256 k x 36

-

1.77 mm

36

18 Bit

SRAM

9 Mbit

-

9437184 bit

Commercial

PARALLEL

-

CACHE SRAM

-

SRAM

22 mm

14 mm

GS8322Z36AGB-150V
GS8322Z36AGB-150V

GSI Technology

In Stock

-

-

-

BGA-119

-

-

-

GSI Technology

-

SDR

14

-

Parallel

GSI Technology

-

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

1 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

2.7 V

1.7 V

-

Synchronous

NBT SRAM

1.8, 2.5 V

Commercial grade

0 to 85 °C

Tray

GS8322Z36AGB

-

-

-

NBT

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

119

-

-

-

-

-

-

36 Mbit

4

-

200 mA, 210 mA

7.5 ns

Flow-Through/Pipelined

1 M x 36

-

-

-

20 Bit

SRAM

36 Mbit

-

-

Commercial

-

-

-

-

SRAM

-

-

GS8182R18BD-375
GS8182R18BD-375

GSI Technology

In Stock

-

-

8 Weeks

-

YES

165

0.45 ns

-

-

DDR

-

GSI TECHNOLOGY

-

GSI Technology

GS8182R18BD-375

-

375 MHz

1.9 V

-

-

1.7 V

-

-

Surface Mount

-

18 Bit

1 MWords

1000000

70 °C

-

PLASTIC/EPOXY

LBGA

LBGA,

-

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.19

-

No

FBGA

-

-

1.8 V

Synchronous

-

1.8000 V

Commercial grade

0 to 70 °C

-

-

e0

No

3A991.B.2.B

-

Tin/Lead (Sn/Pb)

PIPELINED ARCHITECTURE

8542.32.00.41

-

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

not_compliant

165

R-PBGA-B165

Not Qualified

1.9 V

-

COMMERCIAL

1.7 V

-

1

SYNCHRONOUS

-

-

Pipelined

1MX18

-

1.4 mm

18

20 Bit

-

18 Mbit

-

18874368 bit

Commercial

PARALLEL

-

DDR SRAM

-

-

15 mm

13 mm

GS81302D07E-300
GS81302D07E-300

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

QDR

10

-

Parallel

GSI Technology

-

300 MHz

300 MHz

1.9 V

+ 70 C

QDR-II

1.7 V

0 C

Yes

Surface Mount

SMD/SMT

8 Bit

16 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

N

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaQuad-II+

1.8000 V

Commercial grade

0 to 85 °C

Tray

GS81302D07E

-

-

-

SigmaQuad-II+ B4

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

144 Mbit

2

-

815 mA

-

Pipelined

16 M x 8

-

-

-

22 Bit

SRAM

144 Mbit

-

-

Commercial

-

-

-

-

SRAM

-

-

GS8342D20BGD-550I
GS8342D20BGD-550I

GSI Technology

In Stock

-

-

10 Weeks

BGA-165

YES

165

0.45 ns

GSI Technology

550 MHz

QDR

15

GSI TECHNOLOGY

Parallel

GSI Technology

GS8342D20BGD-550I

550 MHz

550 MHz

1.9 V

+ 85 C

DDR

1.7 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

2 MWords

4000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.35

Details

Yes

FBGA

1.9 V

1.7 V

1.8 V

Synchronous

SigmaQuad-II+

1.8000 V

Industrial grade

-40 to 100 °C

Tray

GS8342D20BGD

-

-

3A991.B.2.B

SigmaQuad-II+

-

PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

1.9 V

1.5/1.8,1.8 V

INDUSTRIAL

1.7 V

36 Mbit

2

SYNCHRONOUS

950 mA

-

Pipelined

2 M x 18

3-STATE

1.4 mm

18

19 Bit

SRAM

36 Mbit

0.275 A

75497472 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

SRAM

15 mm

13 mm

GS8342D11BGD-500
GS8342D11BGD-500

GSI Technology

In Stock

-

-

10 Weeks

BGA-165

YES

165

0.45 ns

GSI Technology

500 MHz

QDR

15

GSI TECHNOLOGY

Parallel

GSI Technology

GS8342D11BGD-500

500 MHz

500 MHz

1.9 V

+ 70 C

DDR

1.7 V

0 C

Yes

Surface Mount

SMD/SMT

9 Bit

4 MWords

4000000

70 °C

-

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.36

Details

Yes

FBGA

1.9 V

1.7 V

1.8 V

Synchronous

SigmaQuad-II+

1.8000 V

Commercial grade

0 to 85 °C

Tray

GS8342D11BGD

-

-

3A991.B.2.B

SigmaQuad-II+

-

PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

1.9 V

1.5/1.8,1.8 V

COMMERCIAL

1.7 V

36 Mbit

2

SYNCHRONOUS

855 mA

-

Pipelined

4 M x 9

3-STATE

1.4 mm

9

20 Bit

SRAM

36 Mbit

0.25 A

37748736 bit

Commercial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

SRAM

15 mm

13 mm

GS8342T19BGD-400I
GS8342T19BGD-400I

GSI Technology

In Stock

-

-

10 Weeks

BGA-165

YES

165

0.45 ns

GSI Technology

400 MHz

DDR

15

GSI TECHNOLOGY

Parallel

GSI Technology

GS8342T19BGD-400I

400 MHz

400 MHz

1.9 V

+ 85 C

DDR

1.7 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

2 MWords

2000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.22

Details

Yes

FBGA

1.9 V

1.7 V

1.8 V

Synchronous

SigmaDDR-II+

1.8000 V

Industrial grade

-40 to 100 °C

Tray

GS8342T19BGD

-

-

3A991.B.2.B

SigmaDDR-II+ B2

-

PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

1.9 V

1.5/1.8,1.8 V

INDUSTRIAL

1.7 V

36 Mbit

1

SYNCHRONOUS

610 mA

-

Pipelined

2 M x 18

3-STATE

1.4 mm

18

20 Bit

SRAM

36 Mbit

0.225 A

37748736 bit

Industrial

PARALLEL

COMMON

DDR SRAM

1.7 V

SRAM

15 mm

13 mm

GS8662QT37BD-357
GS8662QT37BD-357

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

QDR

15

-

Parallel

GSI Technology

-

357 MHz

357 MHz

-

+ 70 C

DDR

-

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

2 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

N

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaQuad-II+

1.8000 V

Commercial grade

0 to 85 °C

Tray

GS8662QT37BD

-

-

-

SigmaQuad-II+ B2

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

72 Mbit

2

-

1.195 A

-

Pipelined

2 M x 36

-

-

-

20 Bit

SRAM

72 Mbit

-

-

Commercial

-

-

-

-

SRAM

-

-

GS832132AGD-250V
GS832132AGD-250V

GSI Technology

In Stock

-

-

8 Weeks

BGA-165

YES

165

5.5 ns

GSI Technology

-

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS832132AGD-250V

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

32 Bit

1 MWords

1000000

85 °C

-

PLASTIC/EPOXY

LBGA

LBGA,

-

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.3

Details

Yes

FBGA

2.7 V

1.7 V

1.8 V

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 85 °C

Tray

GS832132AGD

-

-

3A991.B.2.B

Synchronous Burst

-

PIPELINE OR FLOW THROUGH ARCHITECTURE; ALSO OPERATES AT 2.5 SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2 V

-

OTHER

1.7 V

36 Mbit

4

SYNCHRONOUS

240 mA, 295 mA

5.5 ns

Flow-Through/Pipelined

1 M x 32

-

1.4 mm

32

20 Bit

SRAM

36 Mbit

-

33554432 bit

Commercial

PARALLEL

-

CACHE SRAM

-

SRAM

15 mm

13 mm

GS8321Z18AD-333V
GS8321Z18AD-333V

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

SDR

18

-

Parallel

GSI Technology

-

333 MHz

200@Flow-Through/333@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

18 Bit

2 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

N

-

FBGA

2.7 V

1.7 V

-

Synchronous

NBT SRAM

1.8, 2.5 V

Commercial grade

0 to 85 °C

Tray

GS8321Z18AD

-

-

-

NBT

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

36 Mbit

2

-

245 mA, 330 mA

5 ns

Flow-Through/Pipelined

2 M x 18

-

-

-

21 Bit

SRAM

36 Mbit

-

-

Commercial

-

-

-

-

SRAM

-

-

GS8342TT06BGD-500
GS8342TT06BGD-500

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

DDR

15

-

Parallel

GSI Technology

-

500 MHz

500 MHz

1.9 V

+ 70 C

DDR

1.7 V

0 C

Yes

Surface Mount

SMD/SMT

8 Bit

4 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaDDR-II+

1.8000 V

Commercial grade

0 to 85 °C

Tray

GS8342TT06BGD

-

-

-

SigmaQuad-II+

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

36 Mbit

1

-

730 mA

-

Pipelined

4 M x 8

-

-

-

21 Bit

SRAM

36 Mbit

-

-

Commercial

-

-

-

-

SRAM

-

-

GS8342T10BGD-450
GS8342T10BGD-450

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

DDR

15

-

Parallel

GSI Technology

-

450 MHz

450 MHz

-

+ 70 C

DDR

-

0 C

Yes

Surface Mount

SMD/SMT

9 Bit

4 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaDDR-II+

1.8000 V

Commercial grade

0 to 85 °C

Tray

GS8342T10BGD

-

-

-

SigmaDDR-II+ B2

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

36 Mbit

1

-

670 mA

-

Pipelined

4 M x 9

-

-

-

21 Bit

SRAM

36 Mbit

-

-

Commercial

-

-

-

-

SRAM

-

-

GS8321E32AD-375
GS8321E32AD-375

GSI Technology

In Stock

-

-

8 Weeks

BGA-165

YES

165

4.2 ns

GSI Technology

375 MHz

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS8321E32AD-375

375 MHz

238@Flow-Through/375@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

Surface Mount

SMD/SMT

32 Bit

1 MWords

1000000

85 °C

-

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.31

N

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 85 °C

Tray

GS8321E32AD

e0

No

3A991.B.2.B

DCD Pipeline/Flow Through

TIN LEAD

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

-

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

2.5/3.3 V

OTHER

2.3 V

36 Mbit

4

SYNCHRONOUS

270 mA, 380 mA

4.2 ns

Flow-Through/Pipelined

1 M x 32

3-STATE

1.4 mm

32

20 Bit

SRAM

36 Mb

0.03 A

33554432 bit

Commercial

PARALLEL

COMMON

CACHE SRAM

2.3 V

SRAM

15 mm

13 mm

GS8321E32AGD-333I
GS8321E32AGD-333I

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

-

-

-

-

-

Parallel

-

-

333 MHz

222@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 85 C

-

2.3, 3 V

- 40 C

-

-

SMD/SMT

32 Bit

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FBGA

3.6 V

2.3 V

-

-

-

2.5, 3.3 V

-

-40 to 100 °C

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

165

-

-

-

-

-

-

36 Mbit

-

-

280 mA, 365 mA

4.5@Flow-Through/2.5

-

1 M x 32

-

-

-

-

-

-

-

36

-

-

-

-

-

-

-

-