- Organization
- Memory Size
- Mounting Styles
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- Supply Voltage-Max
- Supply Voltage-Min
- Interface Type
- Maximum Operating Temperature
- Minimum Operating Temperature
- Supply Current-Max
- Maximum Clock Frequency
- Manufacturer
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Manufacturer
GSI Memory
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Factory Lead Time | Package / Case | Surface Mount | Number of Terminals | Access Time-Max | Brand | Clock Frequency-Max (fCLK) | Data Rate Architecture | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Maximum Clock Frequency | Maximum Clock Rate | Maximum Operating Supply Voltage | Maximum Operating Temperature | Memory Types | Minimum Operating Supply Voltage | Minimum Operating Temperature | Moisture Sensitive | Moisture Sensitivity Levels | Mounting | Mounting Styles | Number of I/O Lines | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Timing Type | Tradename | Typical Operating Supply Voltage | Usage Level | Operating Temperature | Packaging | Series | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Memory Size | Number of Ports | Operating Mode | Supply Current-Max | Access Time | Architecture | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Product Type | Density | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Product Category | Length | Width |
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 GS8161Z18DGD-333 GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | GSI Technology | - | SDR | 36 | - | Parallel | GSI Technology | - | 333 MHz | 222.2@Flow-Through/333@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | - | Surface Mount | SMD/SMT | 18 Bit | 1 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | Details | - | FBGA | 3.6 V | 2.3 V | - | Synchronous | NBT SRAM | 2.5, 3.3 V | Commercial grade | 0 to 70 °C | Tray | GS8161Z18DGD | - | - | - | NBT | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | 18 Mbit | 2 | - | 240 mA, 285 mA | 4.5 ns | Flow-Through/Pipelined | 1 M x 18 | - | - | - | 20 Bit | SRAM | 18 Mbit | - | - | Commercial | - | - | - | - | SRAM | - | - | ||
GS81302T10E-300I GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | GSI Technology | - | DDR | 10 | - | Parallel | GSI Technology | - | 300 MHz | 300 MHz | 1.9 V | + 85 C | DDR-II | 1.7 V | - 40 C | Yes | - | Surface Mount | SMD/SMT | 9 Bit | 16 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1.9 V | 1.7 V | - | Synchronous | SigmaDDR-II+ | 1.8000 V | Industrial grade | -40 to 100 °C | Tray | GS81302T10E | - | - | - | SigmaDDR-II+ B2 | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 144 Mbit | 1 | - | 700 mA | - | Pipelined | 16 M x 9 | - | - | - | 23 Bit | SRAM | 144 Mbit | - | - | Industrial | - | - | - | - | SRAM | - | - | ||
GS880E32CGT-333I GSI Technology | In Stock | - | - | - | TQFP-100 | - | - | - | GSI Technology | - | SDR | 36 | - | Parallel | GSI Technology | - | 333 MHz | 222.2@Flow-Through/333@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | - | Surface Mount | SMD/SMT | 32 Bit | 256 kWords | - | - | - | - | - | - | - | - | - | - | - | - | - | Details | - | TQFP | 3.6 V | 2.3 V | - | Synchronous | SyncBurst | 2.5, 3.3 V | Industrial grade | -40 to 85 °C | Tray | GS880E32CGT | - | - | - | DCD | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 100 | - | - | - | - | - | - | 9 Mbit | 2 | - | 200 mA, 260 mA | 4.5 ns | Flow-Through/Pipelined | 256 k x 32 | - | - | - | 18 Bit | SRAM | 8 Mbit | - | - | Industrial | - | - | - | - | SRAM | - | - | ||
GS881E32CD-200I GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | GSI Technology | - | - | 72 | - | Parallel | GSI Technology | - | 200 MHz | - | - | + 85 C | SDR | - | - 40 C | Yes | - | - | SMD/SMT | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 3.6 V | 2.3 V | - | - | SyncBurst | - | - | - | Tray | GS881E32CD | - | - | - | DCD Pipeline/Flow Through | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 9 Mbit | - | - | 160 mA, 190 mA | 6.5 ns | - | 256 k x 32 | - | - | - | - | SRAM | - | - | - | - | - | - | - | - | SRAM | - | - | ||
GS8182T08BGD-167I GSI Technology | In Stock | - | - | 8 Weeks | - | YES | 165 | 0.5 ns | - | - | - | - | GSI TECHNOLOGY | - | GSI Technology | GS8182T08BGD-167I | - | - | - | - | - | - | - | - | 3 | - | - | - | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, | - | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.18 | - | Yes | - | - | - | 1.8 V | - | - | - | - | - | - | - | e1 | Yes | 3A991.B.2.B | - | Tin/Silver/Copper (Sn/Ag/Cu) | PIPELINED ARCHITECTURE, LATE WRITE | 8542.32.00.41 | - | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | - | INDUSTRIAL | 1.7 V | - | - | SYNCHRONOUS | - | - | - | 2MX8 | - | 1.4 mm | 8 | - | - | - | - | 16777216 bit | - | PARALLEL | - | DDR SRAM | - | - | 15 mm | 13 mm | ||
GS8662TT19BD-333I GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | GSI Technology | - | DDR | 15 | - | Parallel | GSI Technology | - | 333 MHz | 333 MHz | 1.9 V | + 85 C | DDR | 1.7 V | - 40 C | Yes | - | Surface Mount | SMD/SMT | 18 Bit | 4 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | N | - | FBGA | 1.9 V | 1.7 V | - | Synchronous | SigmaDDR-II+ | 1.8000 V | Industrial grade | -40 to 100 °C | Tray | GS8662TT19BD | - | - | - | SigmaDDR-II+ B2 | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | 72 Mbit | 1 | - | 545 mA | - | Pipelined | 4 M x 18 | - | - | - | 21 Bit | SRAM | 72 Mbit | - | - | Industrial | - | - | - | - | SRAM | - | - | ||
GS832136AGD-375I GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | - | - | SDR | - | - | Parallel | - | - | 375 MHz | 238@Flow-Through/375@Pipelined MHz | 2.7, 3.6 V | + 85 C | - | 2.3, 3 V | - 40 C | - | - | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | FBGA | 3.6 V | 2.3 V | - | Synchronous | - | 2.5, 3.3 V | Industrial grade | -40 to 100 °C | - | GS832136AGD | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | 36 Mbit | 4 | - | 290 mA, 400 mA | 4.2 ns | Flow-Through/Pipelined | 1 M x 36 | - | - | - | 20 Bit | - | 36 Mbit | - | - | Industrial | - | - | - | - | - | - | - | ||
GS864018GT-167V GSI Technology | In Stock | - | - | 8 Weeks | TQFP-100 | YES | 100 | 8 ns | GSI Technology | - | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS864018GT-167V | 167 MHz | 125@Flow-Through/167@Pipelined MHz | 2, 2.7 V | + 70 C | SDR | 1.7, 2.3 V | 0 C | Yes | 3 | Surface Mount | SMD/SMT | 18 Bit | 4 MWords | 4000000 | 70 °C | - | PLASTIC/EPOXY | LQFP | LQFP, | - | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.37 | Details | Yes | TQFP | 2.7 V | 1.7 V | 1.8 V | Synchronous | SyncBurst | 1.8, 2.5 V | Commercial grade | 0 to 70 °C | Tray | GS864018GT | e3 | Yes | 3A991.B.2.B | Synchronous Burst | Matte Tin (Sn) | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2 V | - | COMMERCIAL | 1.7 V | 72 Mbit | 2 | SYNCHRONOUS | 195 mA, 240 mA | 8 ns | Flow-Through/Pipelined | 4 M x 18 | - | 1.6 mm | 18 | 22 Bit | SRAM | 72 Mbit | - | 75497472 bit | Commercial | PARALLEL | - | CACHE SRAM | - | SRAM | 20 mm | 14 mm | ||
GS816032DGT-333I GSI Technology | In Stock | - | - | 10 Weeks | TQFP-100 | YES | 100 | 4.5 ns | - | - | SDR | - | GSI TECHNOLOGY | Parallel | GSI Technology | GS816032DGT-333I | 333 MHz | 222.2@Flow-Through/333@Pipelined MHz | 2.7, 3.6 V | + 85 C | - | 2.3, 3 V | - 40 C | - | - | Surface Mount | SMD/SMT | 32 Bit | 512 kWords | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | LQFP, | - | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.34 | - | Yes | TQFP | 3.6 V | 2.3 V | 2.5 V | Synchronous | - | 2.5, 3.3 V | Industrial grade | -40 to 100 °C | - | - | - | - | 3A991.B.2.B | - | - | FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V | 8542.32.00.41 | - | CMOS | QUAD | GULL WING | NOT SPECIFIED | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | - | 2.7 V | - | INDUSTRIAL | 2.3 V | 18 Mbit | 4 | SYNCHRONOUS | 280 mA, 335 mA | 4.5 ns | Flow-Through/Pipelined | 512 k x 32 | - | 1.6 mm | 32 | 20 Bit | - | 18 Mbit | - | 16777216 bit | Industrial | PARALLEL | - | CACHE SRAM | - | - | 20 mm | 14 mm | ||
GS88218CD-200V GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | - | - | SDR | - | - | Parallel | - | - | 200 MHz | 153.8@Flow-Through/200@Pipelined MHz | 2, 2.7 V | + 70 C | - | 1.7, 2.3 V | 0 C | - | - | Surface Mount | SMD/SMT | 18 Bit | 512 kWords | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | FBGA | 2.7 V | 1.7 V | - | Synchronous | - | 1.8, 2.5 V | Commercial grade | 0 to 70 °C | - | GS88218CD | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | 9 Mbit | 2 | - | 115 mA, 140 mA | 6.5 ns | Flow-Through/Pipelined | 512 k x 18 | - | - | - | 18 Bit | - | 9 Mbit | - | - | Commercial | - | - | - | - | - | - | - | ||
GS8342DT06BGD-550 GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | GSI Technology | - | QDR | 15 | - | Parallel | GSI Technology | - | 550 MHz | 550 MHz | 1.9 V | + 70 C | DDR | 1.7 V | 0 C | Yes | - | Surface Mount | SMD/SMT | 8 Bit | 4 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | Details | - | FBGA | 1.9 V | 1.7 V | - | Synchronous | SigmaQuad-II+ | 1.8000 V | Commercial grade | 0 to 85 °C | Tray | GS8342DT06BGD | - | - | - | SigmaQuad-II+ | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | 36 Mbit | 2 | - | 940 mA | - | Pipelined | 4 M x 8 | - | - | - | 20 Bit | SRAM | 36 Mbit | - | - | Commercial | - | - | - | - | SRAM | - | - | ||
GS864436GE-150V GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | GSI Technology | - | SDR | 15 | - | Parallel | GSI Technology | - | 150 MHz | 133.3@Flow-Through/150@Pipelined MHz | 2, 2.7 V | + 70 C | SDR | 1.7, 2.3 V | 0 C | Yes | - | Surface Mount | SMD/SMT | 36 Bit | 2 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | Details | - | FBGA | 2.7 V | 1.7 V | - | Synchronous | SyncBurst | 1.8, 2.5 V | Commercial grade | 0 to 70 °C | Tray | GS864436GE | - | - | - | Synchronous Burst | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | 72 Mbit | 4 | - | 245 mA, 295 mA | 8.5 ns | Flow-Through/Pipelined | 2 M x 36 | - | - | - | 21 Bit | SRAM | 72 Mbit | - | - | Commercial | - | - | - | - | SRAM | - | - | ||
GS88118CGD-250 GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | GSI Technology | - | - | 72 | - | Parallel | GSI Technology | - | 250 MHz | - | - | + 70 C | SDR | - | 0 C | Yes | - | - | SMD/SMT | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Details | - | - | 3.6 V | 2.3 V | - | - | SyncBurst | - | - | - | Tray | GS88118CGD | - | - | - | Pipeline/Flow Through | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 9 Mbit | - | - | 145 mA, 180 mA | 5.5 ns | - | 512 k x 18 | - | - | - | - | SRAM | - | - | - | - | - | - | - | - | SRAM | - | - | ||
GS864418E-166IV GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | GSI Technology | - | SDR | 15 | - | Parallel | GSI Technology | - | 166 MHz | 125@Flow-Through/166@Pipelined MHz | 2, 2.7 V | + 85 C | SDR | 1.7, 2.3 V | - 40 C | Yes | - | Surface Mount | SMD/SMT | 18 Bit | 4 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | FBGA | 2.7 V | 1.7 V | - | Synchronous | SyncBurst | 1.8, 2.5 V | Industrial grade | -40 to 85 °C | Tray | GS864418E | - | - | - | Synchronous Burst | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | 72 Mbit | 2 | - | 260 mA, 320 mA | 8 ns | Flow-Through/Pipelined | 4 M x 18 | - | - | - | 22 Bit | SRAM | 72 Mbit | - | - | Industrial | - | - | - | - | SRAM | - | - | ||
GS840H36AB-100 GSI Technology | In Stock | - | - | 8 Weeks | - | YES | 119 | 12 ns | - | 100 MHz | - | - | GSI TECHNOLOGY | - | GSI Technology | GS840H36AB-100 | - | - | - | - | - | - | - | - | 3 | - | - | - | 131072 words | 128000 | 70 °C | - | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.28 | - | No | - | - | - | 3.3 V | - | - | - | - | - | - | - | e0 | No | 3A991.B.2.B | - | Tin/Lead (Sn/Pb) | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 3.6 V | 2.5/3.3,3.3 V | COMMERCIAL | 3 V | - | - | SYNCHRONOUS | 0.19 mA | - | - | 128KX36 | 3-STATE | 2.19 mm | 36 | - | - | - | 0.02 A | 4718592 bit | - | PARALLEL | COMMON | CACHE SRAM | 3.14 V | - | 22 mm | 14 mm | ||
GS881E36CD-250 GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | GSI Technology | - | - | 72 | - | Parallel | GSI Technology | - | 250 MHz | - | - | + 70 C | SDR | - | 0 C | Yes | - | - | SMD/SMT | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 3.6 V | 2.3 V | - | - | SyncBurst | - | - | - | Tray | GS881E36CD | - | - | - | DCD Pipeline/Flow Through | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 9 Mbit | - | - | 155 mA, 195 mA | 5.5 ns | - | 256 k x 36 | - | - | - | - | SRAM | - | - | - | - | - | - | - | - | SRAM | - | - | ||
GS81302D18E-350I GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | GSI Technology | - | QDR | 10 | - | Parallel | GSI Technology | - | 350 MHz | 350 MHz | 1.9 V | + 85 C | QDR-II | 1.7 V | - 40 C | Yes | - | Surface Mount | SMD/SMT | 18 Bit | 8 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | FBGA | 1.9 V | 1.7 V | - | Synchronous | SigmaQuad-II | 1.8000 V | Industrial grade | -40 to 100 °C | Tray | GS81302D18E | - | - | - | SigmaQuad-II | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | 144 Mbit | 2 | - | 950 mA | - | Pipelined | 8 M x 18 | - | - | - | 21 Bit | SRAM | 144 Mbit | - | - | Industrial | - | - | - | - | SRAM | - | - | ||
GS81302D09E-350I GSI Technology | In Stock | - | - | 12 Weeks | - | YES | 165 | 0.45 ns | GSI Technology | - | QDR | 10 | GSI TECHNOLOGY | - | GSI Technology | GS81302D09E-350I | - | 350 MHz | 1.9 V | - | - | 1.7 V | - | Yes | - | Surface Mount | - | 9 Bit | 16 MWords | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, | - | RECTANGULAR | GRID ARRAY, LOW PROFILE | Not Recommended | BGA | NOT SPECIFIED | 5.33 | - | No | FBGA | - | - | 1.8 V | Synchronous | SigmaQuad-II | 1.8000 V | Industrial grade | -40 to 100 °C | Tray | GS81302D09E | - | No | 3A991.B.2.B | - | - | PIPELINED ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | - | INDUSTRIAL | 1.7 V | - | 2 | SYNCHRONOUS | - | - | Pipelined | 16MX9 | - | 1.5 mm | 9 | 22 Bit | SRAM | 144 Mbit | - | 150994944 bit | Industrial | PARALLEL | - | DDR SRAM | - | SRAM | 17 mm | 15 mm | ||
GS81302DT10E-333I GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | GSI Technology | - | QDR | 10 | - | Parallel | GSI Technology | - | 333 MHz | 333 MHz | 1.9 V | + 85 C | QDR-II | 1.7 V | - 40 C | Yes | - | Surface Mount | SMD/SMT | 9 Bit | 16 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | FBGA | 1.9 V | 1.7 V | - | Synchronous | SigmaQuad-II+ | 1.8000 V | Industrial grade | -40 to 100 °C | Tray | GS81302DT10E | - | - | - | SigmaQuad-II+ B4 | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | 144 Mbit | 2 | - | 900 mA | - | Pipelined | 16 M x 9 | - | - | - | 22 Bit | SRAM | 144 Mbit | - | - | Industrial | - | - | - | - | SRAM | - | - | ||
GS8640E18GT-200I GSI Technology | In Stock | - | - | - | TQFP-100 | - | - | - | GSI Technology | - | SDR | 18 | - | Parallel | GSI Technology | - | 200 MHz | 133.3@Flow-Through/200@Pipelined MHz | 2, 2.7 V | + 85 C | SDR | 1.7, 2.3 V | - 40 C | Yes | - | Surface Mount | SMD/SMT | 18 Bit | 4 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | Details | - | TQFP | 3.6 V | 2.3 V | - | Synchronous | SyncBurst | 1.8, 2.5 V | Industrial grade | -40 to 85 °C | Tray | GS8640E18GT | - | - | - | Pipeline/Flow Through | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 100 | - | - | - | - | - | - | 72 Mbit | 2 | - | 225 mA, 290 mA | 7.5 ns | Flow-Through/Pipelined | 4 M x 18 | - | - | - | 22 Bit | SRAM | 72 Mbit | - | - | Industrial | - | - | - | - | SRAM | - | - |