- Organization
- Memory Size
- Mounting Styles
- Package / Case
- Supply Voltage-Max
- Supply Voltage-Min
- Interface Type
- Maximum Operating Temperature
- Minimum Operating Temperature
- Supply Current-Max
- Maximum Clock Frequency
- Manufacturer
Attribute column
Manufacturer
GSI Memory
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Factory Lead Time | Package / Case | Surface Mount | Number of Terminals | Access Time-Max | Brand | Clock Frequency-Max (fCLK) | Data Rate Architecture | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Maximum Clock Frequency | Maximum Clock Rate | Maximum Operating Supply Voltage | Maximum Operating Temperature | Memory Types | Minimum Operating Supply Voltage | Minimum Operating Temperature | Moisture Sensitive | Moisture Sensitivity Levels | Mounting | Mounting Styles | Number of I/O Lines | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Timing Type | Tradename | Typical Operating Supply Voltage | Usage Level | Operating Temperature | Packaging | Series | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Memory Size | Number of Ports | Operating Mode | Supply Current-Max | Access Time | Architecture | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Product Type | Density | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Product Category | Length | Width | Radiation Hardening |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 GS8662S09BGD-300I GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | GSI Technology | - | - | 15 | - | Parallel | GSI Technology | - | 300 MHz | - | - | + 85 C | DDR | - | - 40 C | Yes | - | - | SMD/SMT | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Details | - | - | 1.9 V | 1.7 V | - | - | SigmaSIO DDR-II | - | - | - | Tray | GS8662S09BGD | - | - | - | SigmaSIO DDR-II | - | - | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 72 Mbit | - | - | 590 mA | - | - | 8 M x 9 | - | - | - | - | SRAM | - | - | - | - | - | - | - | - | SRAM | - | - | - | ||
GS8662R08BGD-250I GSI Technology | In Stock | - | - | 8 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 250 MHz | - | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8662R08BGD-250I | 250 MHz | - | - | + 85 C | DDR | - | - 40 C | Yes | 3 | - | SMD/SMT | - | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.49 | Details | Yes | - | 1.9 V | 1.7 V | 1.8 V | - | SigmaDDR-II | - | - | - | Tray | GS8662R08BGD | e1 | Yes | 3A991.B.2.B | SigmaDDR-II B4 | Tin/Silver/Copper (Sn/Ag/Cu) | - | - | PIPELINED ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | - | 1.9 V | 1.5/1.8,1.8 V | INDUSTRIAL | 1.7 V | 72 Mbit | - | SYNCHRONOUS | 435 mA | - | - | 8 M x 8 | 3-STATE | 1.4 mm | 8 | - | SRAM | - | - | 67108864 bit | - | PARALLEL | COMMON | STANDARD SRAM | 1.7 V | SRAM | 15 mm | 13 mm | - | ||
GS8662DT19BGD-450 GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | GSI Technology | - | - | 15 | - | Parallel | GSI Technology | - | 450 MHz | 450 MHz | 1.9 V | + 70 C | DDR | 1.7 V | 0 C | Yes | - | - | SMD/SMT | 18 Bit | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Details | - | FBGA | 1.9 V | 1.7 V | - | Synchronous | SigmaQuad-II+ | 1.8000 V | - | 0 to 85 °C | Tray | GS8662DT19BGD | - | - | - | SigmaQuad-II+ B4 | - | - | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | - | 72 Mbit | - | - | 820 mA | 0.45 | - | 4 M x 18 | - | - | - | - | SRAM | - | - | 72 | - | - | - | - | - | SRAM | - | - | - | ||
GS8662Q19BD-200I GSI Technology | In Stock | - | - | 8 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 200 MHz | QDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8662Q19BD-200I | 200 MHz | 200 MHz | 1.9 V | + 85 C | DDR | 1.7 V | - 40 C | Yes | - | Surface Mount | SMD/SMT | 18 Bit | 4 MWords | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.47 | - | No | - | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaQuad-II+ | 1.8000 V | Industrial grade | -40 to 100 °C | Tray | GS8662Q19BD | e0 | No | 3A991.B.2.B | SigmaQuad-II+ B2 | Tin/Lead (Sn/Pb) | - | - | PIPELINED ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | - | 1.9 V | 1.5/1.8,1.8 V | INDUSTRIAL | 1.7 V | 72 Mbit | 2 | SYNCHRONOUS | 610 mA | - | Pipelined | 4 M x 18 | 3-STATE | 1.4 mm | 18 | 21 Bit | SRAM | 72 Mbit | 0.23 A | 75497472 bit | Industrial | PARALLEL | SEPARATE | DDR SRAM | 1.7 V | SRAM | 15 mm | 13 mm | - | ||
GS74116AX-8E GSI Technology | In Stock | - | - | - | BGA-48 | - | - | - | GSI Technology | - | - | 135 | - | Parallel | GSI Technology | - | - | - | 3.6 V | - | - | 3 V | - | - | - | Surface Mount | SMD/SMT | 16 Bit | 256 kWords | - | - | - | - | - | - | - | - | - | - | - | - | - | N | - | FBGA | 3.6 V | 3 V | - | Asynchronous | - | 3.3000 V | - | -40 to 125 °C | - | GS74116AX | - | - | - | Asynchronous | - | - | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 48 | - | - | - | - | - | - | - | 4 Mbit | 1 | - | 130 mA | 8 ns | - | 256 k x 16 | - | - | - | 18 Bit | SRAM | 4 Mbit | - | - | Extended Industrial | - | - | - | - | SRAM | - | - | - | ||
GS8321Z18AGD-150IV GSI Technology | In Stock | - | - | 8 Weeks | BGA-165 | YES | 165 | 7.5 ns | GSI Technology | 150 MHz | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8321Z18AGD-150IV | 150 MHz | 133.3@Flow-Through/150@Pipelined MHz | 2, 2.7 V | + 85 C | SDR | 1.7, 2.3 V | - 40 C | Yes | 3 | Surface Mount | SMD/SMT | 18 Bit | 2 MWords | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.16 | Details | Yes | FBGA | 2.7 V | 1.7 V | 1.8 V | Synchronous | NBT SRAM | 1.8, 2.5 V | Industrial grade | -40 to 100 °C | Tray | GS8321Z18AGD | e1 | Yes | 3A991.B.2.B | NBT | Tin/Silver/Copper (Sn/Ag/Cu) | - | - | ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | - | 2 V | 1.8/2.5 V | INDUSTRIAL | 1.7 V | 36 Mbit | 2 | SYNCHRONOUS | 205 mA, 220 mA | 7.5 ns | Flow-Through/Pipelined | 2 M x 18 | 3-STATE | 1.4 mm | 18 | 21 Bit | SRAM | 36 Mbit | 0.04 A | 37748736 bit | Industrial | PARALLEL | COMMON | ZBT SRAM | 1.7 V | SRAM | 15 mm | 13 mm | - | ||
GS81302TT37GE-333 GSI Technology | In Stock | - | - | 12 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | - | DDR | 10 | GSI TECHNOLOGY | Parallel | GSI Technology | GS81302TT37GE-333 | 333 MHz | 333 MHz | - | + 70 C | DDR-II | - | 0 C | Yes | 3 | Surface Mount | SMD/SMT | 36 Bit | 4 MWords | 4000000 | 70 °C | - | PLASTIC/EPOXY | LBGA | LBGA, | - | RECTANGULAR | GRID ARRAY, LOW PROFILE | Not Recommended | BGA | NOT SPECIFIED | 5.06 | Details | Yes | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaDDR-II+ | 1.8000 V | Commercial grade | 0 to 85 °C | Tray | GS81302TT37GE | e1 | Yes | 3A991.B.2.B | SigmaDDR-II+ B2 | Tin/Silver/Copper (Sn/Ag/Cu) | - | - | PIPELINED ARCHITECTURE, LATE WRITE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | - | 1.9 V | - | COMMERCIAL | 1.7 V | 144 Mbit | 1 | SYNCHRONOUS | 850 mA | - | Pipelined | 4 M x 36 | - | 1.5 mm | 36 | 21 Bit | SRAM | 144 Mbit | - | 150994944 bit | Commercial | PARALLEL | - | DDR SRAM | - | SRAM | 17 mm | 15 mm | - | ||
GS71116AU-12E GSI Technology | In Stock | - | - | - | BGA-48 | - | - | - | GSI Technology | - | - | 270 | - | Parallel | GSI Technology | - | - | - | - | - | - | - | - | - | - | - | SMD/SMT | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | N | - | - | 3.6 V | 3 V | - | - | - | - | - | - | - | GS71116AU | - | - | - | Asynchronous | - | - | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1 Mbit | - | - | 85 mA | 12 ns | - | 64 k x 16 | - | - | - | - | SRAM | - | - | - | - | - | - | - | - | SRAM | - | - | - | ||
GS8182R36BD-400 GSI Technology | In Stock | - | - | 8 Weeks | - | YES | 165 | 0.45 ns | - | - | DDR | - | GSI TECHNOLOGY | - | GSI Technology | GS8182R36BD-400 | - | 400 MHz | - | - | - | - | - | - | - | Surface Mount | - | 36 Bit | 512 kWords | 512000 | 70 °C | - | PLASTIC/EPOXY | LBGA | LBGA, | - | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.19 | - | No | FBGA | - | - | 1.8 V | Synchronous | - | 1.8000 V | Commercial grade | 0 to 70 °C | - | - | e0 | No | 3A991.B.2.B | - | Tin/Lead (Sn/Pb) | - | - | PIPELINED ARCHITECTURE | 8542.32.00.41 | - | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | not_compliant | 165 | R-PBGA-B165 | Not Qualified | - | 1.9 V | - | COMMERCIAL | 1.7 V | - | 1 | SYNCHRONOUS | - | - | Pipelined | 512KX36 | - | 1.4 mm | 36 | 19 Bit | - | 18 Mbit | - | 18874368 bit | Commercial | PARALLEL | - | DDR SRAM | - | - | 15 mm | 13 mm | - | ||
GS8662QT07BD-300M GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | GSI Technology | - | QDR | 15 | - | Parallel | GSI Technology | - | 300 MHz | 300 MHz | 1.9 V | + 125 C | DDR | 1.7 V | - 55 C | Yes | - | Surface Mount | SMD/SMT | 8 Bit | 8 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | FBGA | 1.9 V | 1.7 V | - | Synchronous | SigmaQuad-II+ | 1.8000 V | Military grade | -55 to 125 °C | Tray | GS8662QT07BD | - | - | - | SigmaQuad-II+ B2 | - | - | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | - | 72 Mbit | 2 | - | - | - | Pipelined | 8 M x 8 | - | - | - | 22 Bit | SRAM | 72 Mbit | - | - | Military | - | - | - | - | SRAM | - | - | - | ||
GS864218GB-167V GSI Technology | In Stock | - | - | - | BGA-119 | - | - | - | GSI Technology | - | SDR | 14 | - | Parallel | GSI Technology | - | 167 MHz | 125@Flow-Through/167@Pipelined MHz | 2, 2.7 V | + 70 C | SDR | 1.7, 2.3 V | 0 C | Yes | - | Surface Mount | SMD/SMT | 18 Bit | 4 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | Details | - | FBGA | 2.7 V | 1.7 V | - | Synchronous | SyncBurst | 1.8, 2.5 V | Commercial grade | 0 to 70 °C | Tray | GS864218GB | - | - | - | SCD/DCD Pipeline/Flow Through | - | - | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 119 | - | - | - | - | - | - | - | 72 Mbit | 2 | - | 195 mA, 240 mA | 8 ns | Flow-Through/Pipelined | 4 M x 18 | - | - | - | 22 Bit | SRAM | 72 Mbit | - | - | Commercial | - | - | - | - | SRAM | - | - | - | ||
GS8342T06BGD-500 GSI Technology | In Stock | - | - | 10 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 500 MHz | DDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8342T06BGD-500 | 500 MHz | 500 MHz | 1.9 V | + 70 C | DDR | 1.7 V | 0 C | Yes | - | Surface Mount | SMD/SMT | 8 Bit | 4 MWords | 4000000 | 70 °C | - | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.36 | Details | Yes | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaDDR-II+ | 1.8000 V | Commercial grade | 0 to 85 °C | Tray | GS8342T06BGD | - | - | 3A991.B.2.B | SigmaQuad-II+ | - | 85 °C | 0 °C | PIPELINED ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.8 V | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | 36 Mbit | 1 | SYNCHRONOUS | 730 mA | - | Pipelined | 4 M x 8 | 3-STATE | 1.4 mm | 8 | 21 Bit | SRAM | 36 Mbit | 0.24 A | 33554432 bit | Commercial | PARALLEL | COMMON | DDR SRAM | 1.7 V | SRAM | 15 mm | 13 mm | No | ||
GS881Z18CGT-333I GSI Technology | In Stock | - | - | 8 Weeks | TQFP-100 | YES | 100 | 4.5 ns | GSI Technology | - | SDR | 36 | GSI TECHNOLOGY | Parallel | GSI Technology | GS881Z18CGT-333I | 333 MHz | - | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | 3 | Surface Mount | SMD/SMT | 18 Bit | 512 kWords | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | LQFP, | - | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.51 | Details | Yes | TQFP | 3.6 V | 2.3 V | 2.5 V | Synchronous | NBT SRAM | 2.5, 3.3 V | Industrial grade | -40 to 85 °C | Tray | GS881Z18CGT | e3 | Yes | 3A991.B.2.B | NBT Pipeline/Flow Through | Matte Tin (Sn) | 85 °C | -40 °C | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | - | 2.7 V | - | INDUSTRIAL | 2.3 V | 9 Mbit | 1 | SYNCHRONOUS | 185 mA, 240 mA | 4.5 ns | Flow-Through/Pipelined | 512 k x 18 | - | 1.6 mm | 18 | 18 Bit | SRAM | 9 Mbit | - | 9437184 bit | Industrial | PARALLEL | - | ZBT SRAM | - | SRAM | 20 mm | 14 mm | No | ||
GS8662TT10BD-400I GSI Technology | In Stock | - | - | 8 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 400 MHz | DDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8662TT10BD-400I | 400 MHz | 400 MHz | 1.9 V | + 85 C | DDR | 1.7 V | - 40 C | Yes | - | Surface Mount | SMD/SMT | 9 Bit | 8 MWords | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.22 | Compliant | No | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaDDR-II+ | 1.8000 V | Industrial grade | -40 to 100 °C | Tray | GS8662TT10BD | e0 | No | 3A991.B.2.B | SigmaDDR-II+ B2 | Tin/Lead (Sn/Pb) | 100 °C | -40 °C | PIPELINED ARCHITECTURE, LATE WRITE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.8 V | 1.9 V | 1.5/1.8,1.8 V | INDUSTRIAL | 1.7 V | 72 Mbit | 1 | SYNCHRONOUS | 635 mA | - | Pipelined | 8 M x 9 | 3-STATE | 1.4 mm | 9 | 22 Bit | SRAM | 72 Mbit | 0.255 A | 75497472 bit | Industrial | PARALLEL | COMMON | DDR SRAM | 1.7 V | SRAM | 15 mm | 13 mm | No | ||
GS8662D06BD-500 GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | GSI Technology | - | QDR | 15 | - | Parallel | GSI Technology | - | 500 MHz | 500 MHz | 1.9 V | + 70 C | DDR | 1.7 V | 0 C | Yes | - | Surface Mount | SMD/SMT | 8 Bit | 8 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | Compliant | - | FBGA | 1.9 V | 1.7 V | - | Synchronous | SigmaQuad-II+ | 1.8000 V | Commercial grade | 0 to 85 °C | Tray | GS8662D06BD | - | - | - | SigmaQuad-II+ | - | 85 °C | 0 °C | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 165 | - | - | 1.8 V | - | - | - | - | 72 Mbit | 2 | - | 890 mA | - | Pipelined | 8 M x 8 | - | - | - | 21 Bit | SRAM | 72 Mbit | - | - | Commercial | - | - | - | - | SRAM | - | - | No | ||
GS8342DT37BGD-400 GSI Technology | In Stock | - | - | 10 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 400 MHz | QDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8342DT37BGD-400 | 400 MHz | 400 MHz | 1.9 V | + 70 C | DDR | 1.7 V | 0 C | Yes | 3 | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 85 °C | - | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.21 | Details | Yes | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaQuad-II+ | 1.8000 V | Commercial grade | 0 to 85 °C | Tray | GS8342DT37BGD | e1 | Yes | 3A991.B.2.B | SigmaQuad-II+ B4 | Tin/Silver/Copper (Sn/Ag/Cu) | 85 °C | 0 °C | - | - | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.8 V | 1.9 V | 1.5/1.8,1.8 V | OTHER | 1.7 V | 36 Mbit | 2 | SYNCHRONOUS | 905 mA | - | Pipelined | 1 M x 36 | 3-STATE | 1.4 mm | 36 | 18 Bit | SRAM | 36 Mbit | - | 37748736 bit | Commercial | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | SRAM | 15 mm | 13 mm | No | ||
GS8342D38BD-500I GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | GSI Technology | - | QDR | 15 | - | Parallel | GSI Technology | - | 500 MHz | 500 MHz | 1.9 V | + 85 C | DDR | 1.7 V | - 40 C | Yes | - | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | Compliant | - | FBGA | 1.9 V | 1.7 V | - | Synchronous | SigmaQuad-II+ | 1.8000 V | Industrial grade | -40 to 100 °C | Tray | GS8342D38BD | - | - | - | SigmaQuad-II+ | - | 100 °C | -40 °C | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 165 | - | - | 1.8 V | - | - | - | - | 36 Mbit | 2 | - | 1.125 A | - | Pipelined | 1 M x 36 | - | - | - | 18 Bit | SRAM | 36 Mbit | - | - | Industrial | - | - | - | - | SRAM | - | - | No | ||
GS816132DGD-375I GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | GSI Technology | - | SDR | 36 | - | Parallel | GSI Technology | - | 375 MHz | - | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | - | Surface Mount | SMD/SMT | 32 Bit | 512 kWords | - | - | - | - | - | - | - | - | - | - | - | - | - | Details | - | FBGA | 3.6 V | 2.3 V | - | Synchronous | SyncBurst | 2.5, 3.3 V | Industrial grade | -40 to 85 °C | Tray | GS816132DGD | - | - | - | Pipeline/Flow Through | - | 85 °C | -40 °C | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | - | 18 Mbit | 4 | - | 290 mA, 370 mA | 4.2 ns | Flow-Through/Pipelined | 512 k x 32 | - | - | - | 19 Bit | SRAM | 18 Mbit | - | - | Industrial | - | - | - | - | SRAM | - | - | No | ||
GS8644Z36GE-250VT GSI Technology | In Stock | - | - | 8 Weeks | - | YES | 165 | 6.5 ns | - | - | SDR | - | GSI TECHNOLOGY | - | GSI Technology | GS8644Z36GE-250VT | - | 250 MHz | 2.7, 3.6 V | - | - | 2.3, 3 V | - | - | 3 | Surface Mount | - | 36 Bit | 2 MWords | 2000000 | 70 °C | - | PLASTIC/EPOXY | LBGA | LBGA, | - | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.29 | Non-Compliant | Yes | FBGA | - | - | 1.8 V | Synchronous | - | 2.5, 3.3 V | Commercial grade | 0 to 70 °C | - | - | e1 | Yes | 3A991.B.2.B | - | Tin/Silver/Copper (Sn/Ag/Cu) | - | - | PIPELINED OR FLOW-THROUGH ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY | 8542.32.00.41 | - | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | - | 2 V | - | COMMERCIAL | 1.7 V | - | 4 | SYNCHRONOUS | - | - | Flow-Through/Pipelined | 2MX36 | - | 1.5 mm | 36 | 21 Bit | - | 72 Mbit | - | 75497472 bit | Commercial | PARALLEL | - | ZBT SRAM | - | - | 17 mm | 15 mm | - | ||
GS816218DB-333V GSI Technology | In Stock | - | - | - | BGA-119 | - | - | - | GSI Technology | - | SDR | 21 | - | Parallel | GSI Technology | - | 333 MHz | 200@Flow-Through/333@Pipelined MHz | 2, 2.7 V | + 70 C | SDR | 1.7, 2.3 V | 0 C | Yes | - | Surface Mount | SMD/SMT | 18 Bit | 1 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | N | - | FBGA | 2.7 V | 1.7 V | - | Synchronous | SyncBurst | 1.8, 2.5 V | Commercial grade | 0 to 85 °C | Tray | GS816218DB | - | - | - | Pipeline/Flow Through | - | 85 °C | 0 °C | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 119 | - | - | - | - | - | - | - | 18 Mbit | 2 | - | 220 mA, 280 mA | 5 ns | Flow-Through/Pipelined | 1 M x 18 | - | - | - | 20 Bit | SRAM | 18 Mbit | - | - | Commercial | - | - | - | - | SRAM | - | - | No |