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Datasheet

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Factory Lead Time

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Brand

Clock Frequency-Max (fCLK)

Data Rate Architecture

Factory Pack QuantityFactory Pack Quantity

Ihs Manufacturer

Interface Type

Manufacturer

Manufacturer Part Number

Maximum Clock Frequency

Maximum Clock Rate

Maximum Operating Supply Voltage

Maximum Operating Temperature

Memory Types

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Minimum Operating Temperature

Moisture Sensitive

Moisture Sensitivity Levels

Mounting

Mounting Styles

Number of I/O Lines

Number of Words

Number of Words Code

Operating Temperature-Max

Operating Temperature-Min

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Package Code

Package Description

Package Equivalence Code

Package Shape

Package Style

Part Life Cycle Code

Part Package Code

Reflow Temperature-Max (s)

Risk Rank

RoHS

Rohs Code

Supplier Package

Supply Voltage-Max

Supply Voltage-Min

Supply Voltage-Nom (Vsup)

Timing Type

Tradename

Typical Operating Supply Voltage

Usage Level

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

ECCN Code

Type

Terminal Finish

Additional Feature

HTS Code

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Number of Functions

Terminal Pitch

Reach Compliance Code

Pin Count

JESD-30 Code

Qualification Status

Supply Voltage-Max (Vsup)

Power Supplies

Temperature Grade

Supply Voltage-Min (Vsup)

Memory Size

Number of Ports

Operating Mode

Supply Current-Max

Access Time

Architecture

Organization

Output Characteristics

Seated Height-Max

Memory Width

Address Bus Width

Product Type

Density

Standby Current-Max

Memory Density

Screening Level

Parallel/Serial

I/O Type

Memory IC Type

Standby Voltage-Min

Product Category

Length

Width

GS864272GC-167V
GS864272GC-167V

GSI Technology

In Stock

-

-

-

BGA-209

-

-

-

GSI Technology

-

SDR

14

-

Parallel

GSI Technology

-

167 MHz

-

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

-

Surface Mount

SMD/SMT

72 Bit

1 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

2.7 V

1.7 V

-

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS864272GC

-

-

-

SCD/DCD Pipeline/Flow Through

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

209

-

-

-

-

-

-

72 Mbit

8

-

270 mA, 340 mA

8 ns

Flow-Through/Pipelined

1 M x 72

-

-

-

-

SRAM

72 Mbit

-

-

Commercial

-

-

-

-

SRAM

-

-

GS81302T08GE-350I
GS81302T08GE-350I

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

-

-

DDR

-

-

Parallel

-

-

350 MHz

350 MHz

1.9 V

+ 85 C

-

1.7 V

- 40 C

-

-

Surface Mount

SMD/SMT

8 Bit

16 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FBGA

1.9 V

1.7 V

-

Synchronous

-

1.8000 V

Industrial grade

-40 to 100 °C

-

GS81302T08GE

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

165

-

-

-

-

-

-

144 Mbit

2

-

810 mA

-

Pipelined

16 M x 8

-

-

-

23 Bit

-

144 Mbit

-

-

Industrial

-

-

-

-

-

-

-

GS816272CGC-200I
GS816272CGC-200I

GSI Technology

In Stock

-

-

-

BGA-209

-

-

-

GSI Technology

-

SDR

21

-

Parallel

GSI Technology

-

200 MHz

-

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

72 Bit

256 kWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

3.6 V

2.3 V

-

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS816272CGC

-

-

-

Pipeline/Flow Through

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

209

-

-

-

-

-

-

18 Mbit

8

-

240 mA, 270 mA

6.5 ns

Flow-Through/Pipelined

256 k x 72

-

-

-

-

SRAM

18 Mbit

-

-

Industrial

-

-

-

-

SRAM

-

-

GS8321Z36AD-333IV
GS8321Z36AD-333IV

GSI Technology

In Stock

-

-

8 Weeks

BGA-165

YES

165

5 ns

GSI Technology

333 MHz

-

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS8321Z36AD-333IV

333 MHz

-

-

+ 85 C

SDR

-

- 40 C

Yes

-

-

SMD/SMT

-

1048576 words

1000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.12

-

No

-

2.7 V

1.7 V

1.8 V

-

NBT SRAM

-

-

-

Tray

GS8321Z36AD

e0

No

3A991.B.2.B

NBT

Tin/Lead (Sn/Pb)

ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2 V

1.8/2.5 V

INDUSTRIAL

1.7 V

36 Mbit

-

SYNCHRONOUS

290 mA, 375 mA

5 ns

-

1 M x 36

3-STATE

1.4 mm

36

-

SRAM

-

0.04 A

36

-

PARALLEL

COMMON

ZBT SRAM

1.7 V

SRAM

15 mm

13 mm

GS8662TT10BD-350
GS8662TT10BD-350

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

DDR

15

-

Parallel

GSI Technology

-

350 MHz

350 MHz

1.9 V

+ 70 C

DDR

1.7 V

0 C

Yes

-

Surface Mount

SMD/SMT

9 Bit

8 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

N

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaDDR-II+

1.8000 V

Commercial grade

0 to 85 °C

Tray

GS8662TT10BD

-

-

-

SigmaDDR-II+ B2

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

72 Mbit

1

-

590 mA

-

Pipelined

8 M x 9

-

-

-

22 Bit

SRAM

72 Mbit

-

-

Commercial

-

-

-

-

SRAM

-

-

GS864418E-166
GS864418E-166

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

SDR

15

-

Parallel

GSI Technology

-

166 MHz

142.8@Flow-Through/166@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

4 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

N

-

FBGA

3.6 V

2.3 V

-

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 70 °C

Tray

GS864418E

-

-

-

Synchronous Burst

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

72 Mbit

2

-

240 mA, 285 mA

8 ns

Flow-Through/Pipelined

4 M x 18

-

-

-

22 Bit

SRAM

72 Mbit

-

-

Commercial

-

-

-

-

SRAM

-

-

GS81302S08GE-250I
GS81302S08GE-250I

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

-

-

DDR

-

-

Parallel

-

-

250 MHz

250 MHz

-

+ 85 C

-

-

- 40 C

-

-

Surface Mount

SMD/SMT

8 Bit

16 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FBGA

1.9 V

1.7 V

-

Synchronous

-

1.8000 V

Industrial grade

-40 to 100 °C

-

GS81302S08GE

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

165

-

-

-

-

-

-

144 Mbit

2

-

710 mA

-

Pipelined

16 M x 8

-

-

-

-

-

144 Mbit

-

-

Industrial

-

-

-

-

-

-

-

GS840H32AB-150
GS840H32AB-150

GSI Technology

In Stock

-

-

-

-

YES

119

10 ns

-

150 MHz

-

-

GSI TECHNOLOGY

-

GSI Technology

GS840H32AB-150

-

-

-

-

-

-

-

-

3

-

-

-

131072 words

128000

70 °C

-

PLASTIC/EPOXY

BGA

BGA, BGA119,7X17,50

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.3

-

No

-

-

-

3.3 V

-

-

-

-

-

-

-

e0

No

3A991.B.2.B

-

Tin/Lead (Sn/Pb)

FLOW-THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

3.6 V

2.5/3.3,3.3 V

COMMERCIAL

3 V

-

-

SYNCHRONOUS

0.28 mA

-

-

128KX32

3-STATE

2.19 mm

32

-

-

-

0.02 A

4194304 bit

-

PARALLEL

COMMON

CACHE SRAM

3.14 V

-

22 mm

14 mm

GS88136CGT-200IV
GS88136CGT-200IV

GSI Technology

In Stock

-

-

8 Weeks

TQFP-100

YES

100

6.5 ns

GSI Technology

-

SDR

66

GSI TECHNOLOGY

Parallel

GSI Technology

GS88136CGT-200IV

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

256 kWords

256000

85 °C

-40 °C

PLASTIC/EPOXY

LQFP

LQFP,

-

RECTANGULAR

FLATPACK

Active

QFP

NOT SPECIFIED

5.28

Details

Yes

TQFP

2.7 V

1.7 V

1.8 V

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 85 °C

Tray

GS88136CGT

-

-

3A991.B.2.B

Synchronous Burst

-

ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2 V

-

INDUSTRIAL

1.7 V

9 Mbit

1

SYNCHRONOUS

145 mA, 170 mA

6.5 ns

Flow-Through/Pipelined

256 k x 36

-

1.6 mm

36

18 Bit

SRAM

9 Mbit

-

9437184 bit

Industrial

PARALLEL

-

CACHE SRAM

-

SRAM

20 mm

14 mm

GS832218AB-375I
GS832218AB-375I

GSI Technology

In Stock

-

-

8 Weeks

BGA-119

YES

119

4.2 ns

GSI Technology

375 MHz

SDR

14

GSI TECHNOLOGY

Parallel

GSI Technology

GS832218AB-375I

375 MHz

238@Flow-Through/375@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

2 MWords

2000000

85 °C

-40 °C

PLASTIC/EPOXY

BGA

BGA, BGA119,7X17,50

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.11

-

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 100 °C

Tray

GS832218AB

e0

No

3A991.B.2.B

Pipeline/Flow Through

Tin/Lead (Sn/Pb)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

36 Mbit

2

SYNCHRONOUS

270 mA, 370 mA

4.2 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.99 mm

18

21 Bit

SRAM

36 Mb

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

CACHE SRAM

2.3 V

SRAM

22 mm

14 mm

GS8320E18AGT-375
GS8320E18AGT-375

GSI Technology

In Stock

-

-

-

TQFP-100

-

-

-

GSI Technology

-

-

18

-

Parallel

GSI Technology

-

375 MHz

-

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

-

-

SMD/SMT

18 Bit

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

TQFP

3.6 V

2.3 V

-

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 85 °C

Tray

GS8320E18AGT

-

-

-

Pipeline/Flow Through

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

100

-

-

-

-

-

-

36 Mbit

-

-

250 mA, 350 mA

4.2@Flow-Through/2.5

-

2 M x 18

-

-

-

-

SRAM

-

-

36

Commercial

-

-

-

-

SRAM

-

-

GS81302T20GE-450I
GS81302T20GE-450I

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

GSI Technology

-

DDR

10

-

Parallel

GSI Technology

-

450 MHz

450 MHz

1.9 V

+ 85 C

DDR-II

1.7 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

8 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaDDR-II+

1.8000 V

Industrial grade

-40 to 100 °C

Tray

GS81302T20GE

-

-

-

SigmaDDR-II+

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

144 Mbit

1

-

1.01 A

-

Pipelined

8 M x 18

-

-

-

22 Bit

SRAM

144 Mbit

-

-

Industrial

-

-

-

-

SRAM

-

-

GS81284Z36GB-250IV
GS81284Z36GB-250IV

GSI Technology

In Stock

-

-

-

BGA-119

-

-

-

GSI Technology

-

SDR

10

-

Parallel

GSI Technology

-

250 MHz

250 MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

4 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

3.6 V

2.3 V

-

Synchronous

-

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

-

-

-

-

NBT Pipeline/Flow Through

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

119

-

-

-

-

-

-

144 Mbit

4

-

415 mA, 535 mA

6.5 ns

Flow-Through/Pipelined

4 M x 36

-

-

-

22 Bit

SRAM

144 Mbit

-

-

Industrial

-

-

-

-

SRAM

-

-

GS8182T37BD-400I
GS8182T37BD-400I

GSI Technology

In Stock

-

-

8 Weeks

-

YES

165

0.45 ns

-

400 MHz

-

-

GSI TECHNOLOGY

-

GSI Technology

GS8182T37BD-400I

-

-

-

-

-

-

-

-

-

-

-

-

524288 words

512000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.2

-

No

-

-

-

1.8 V

-

-

-

-

-

-

-

e0

No

3A991.B.2.B

-

Tin/Lead (Sn/Pb)

PIPELINED ARCHITECTURE

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

not_compliant

165

R-PBGA-B165

Not Qualified

1.9 V

1.5/1.8,1.8 V

INDUSTRIAL

1.7 V

-

-

SYNCHRONOUS

0.575 mA

-

-

512KX36

3-STATE

1.4 mm

36

-

-

-

0.185 A

18874368 bit

-

PARALLEL

COMMON

DDR SRAM

1.7 V

-

15 mm

13 mm

GS8182T37BGD-400
GS8182T37BGD-400

GSI Technology

In Stock

-

-

-

-

-

-

-

-

-

DDR

-

-

-

-

-

-

400 MHz

1.9 V

-

-

1.7 V

-

-

-

Surface Mount

-

36 Bit

512 kWords

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FBGA

-

-

-

Synchronous

-

1.8000 V

Commercial grade

0 to 70 °C

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

165

-

-

-

-

-

-

-

1

-

-

-

Pipelined

-

-

-

-

18 Bit

-

18 Mbit

-

-

Commercial

-

-

-

-

-

-

-

GS88236CGD-200I
GS88236CGD-200I

GSI Technology

In Stock

-

-

8 Weeks

BGA-165

YES

165

6.5 ns

GSI Technology

-

SDR

72

GSI TECHNOLOGY

Parallel

GSI Technology

GS88236CGD-200I

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

3

Surface Mount

SMD/SMT

36 Bit

256 kWords

256000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA,

-

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

4.59

Details

Yes

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS88236CGD

e1

Yes

3A991.B.2.B

Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

-

INDUSTRIAL

2.3 V

9 Mbit

4

SYNCHRONOUS

160 mA, 190 mA

6.5 ns

Flow-Through/Pipelined

256 k x 36

-

1.4 mm

36

18 Bit

SRAM

9 Mbit

-

9437184 bit

Industrial

PARALLEL

-

CACHE SRAM

-

SRAM

15 mm

13 mm

GS882Z18CB-300I
GS882Z18CB-300I

GSI Technology

In Stock

-

-

-

BGA-119

-

-

-

GSI Technology

-

SDR

42

-

Parallel

GSI Technology

-

300 MHz

200@Flow-Through/300@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

512 kWords

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FBGA

3.6 V

2.3 V

-

Synchronous

NBT SRAM

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS882Z18CB

-

-

-

NBT Pipeline/Flow Through

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

119

-

-

-

-

-

-

9 Mbit

2

-

170 mA, 225 mA

5 ns

Flow-Through/Pipelined

512 k x 18

-

-

-

18 Bit

SRAM

9 Mbit

-

-

Industrial

-

-

-

-

SRAM

-

-

GS882Z18CGB-333
GS882Z18CGB-333

GSI Technology

In Stock

-

-

-

BGA-119

-

-

-

GSI Technology

-

SDR

42

-

Parallel

GSI Technology

-

333 MHz

222.2@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

512 kWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

3.6 V

2.3 V

-

Synchronous

NBT SRAM

2.5, 3.3 V

Commercial grade

0 to 70 °C

Tray

GS882Z18CGB

-

-

-

NBT Pipeline/Flow Through

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

119

-

-

-

-

-

-

9 Mbit

2

-

165 mA, 220 mA

4.5 ns

Flow-Through/Pipelined

512 k x 18

-

-

-

18 Bit

SRAM

9 Mbit

-

-

Commercial

-

-

-

-

SRAM

-

-

GS8320E18AGT-400
GS8320E18AGT-400

GSI Technology

In Stock

-

-

-

TQFP-100

-

-

-

GSI Technology

-

SDR

18

-

Parallel

GSI Technology

-

400 MHz

250@Flow-Through/400@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

2 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

TQFP

3.6 V

2.3 V

-

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 85 °C

Tray

GS8320E18AGT

-

-

-

Pipeline/Flow Through

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

100

-

-

-

-

-

-

36 Mbit

2

-

265 mA, 355 mA

4 ns

Flow-Through/Pipelined

2 M x 18

-

-

-

21 Bit

SRAM

36 Mbit

-

-

Commercial

-

-

-

-

SRAM

-

-

GS8342T07BD-400
GS8342T07BD-400

GSI Technology

In Stock

-

-

-

BGA-165

-

-

-

-

-

DDR

-

-

Parallel

-

-

400 MHz

400 MHz

1.9 V

+ 70 C

-

1.7 V

0 C

-

-

Surface Mount

SMD/SMT

8 Bit

4 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FBGA

1.9 V

1.7 V

-

Synchronous

-

1.8000 V

Commercial grade

0 to 85 °C

-

GS8342T07BD

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

165

-

-

-

-

-

-

36 Mbit

1

-

600 mA

-

Pipelined

4 M x 8

-

-

-

21 Bit

-

36 Mbit

-

-

Commercial

-

-

-

-

-

-

-