-

-

BGA-165

-

-

-

GSI Technology

-

QDR

15

-

Parallel

GSI Technology

-

357 MHz

357 MHz

1.9 V

+ 85 C

DDR

1.7 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

9 Bit

4 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaQuad-II+

1.8000 V

Industrial grade

-40 to 100 °C

Tray

GS8342Q10BGD

-

-

-

SigmaQuad-II+ B2

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

36 Mbit

2

-

955 mA

-

Pipelined

4 M x 9

-

-

-

21 Bit

SRAM

36 Mbit

-

-

Industrial

-

-

-

-

SRAM

-

-

-

-

BGA-165

-

-

-

GSI Technology

-

SDR

36

-

Parallel

GSI Technology

-

333 MHz

222.2@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

256 kWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

3.6 V

2.3 V

-

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS88236CGD

-

-

-

Pipeline/Flow Through

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

9 Mbit

4

-

200 mA, 260 mA

4.5 ns

Flow-Through/Pipelined

256 k x 36

-

-

-

18 Bit

SRAM

9 Mbit

-

-

Industrial

-

-

-

-

SRAM

-

-

-

10 Weeks

TQFP-100

YES

100

4.5 ns

GSI Technology

-

SDR

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS816018DGT-333

333 MHz

222.2@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

0 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

1 MWords

1000000

70 °C

-

PLASTIC/EPOXY

LQFP

LQFP,

-

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.32

Details

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 85 °C

Tray

GS816018DGT

-

-

3A991.B.2.B

Pipeline/Flow Through

-

FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

100

R-PQFP-G100

-

2.7 V

-

COMMERCIAL

2.3 V

18 Mbit

2

SYNCHRONOUS

240 mA, 285 mA

4.5 ns

Flow-Through/Pipelined

1 M x 18

-

1.6 mm

8

21 Bit

SRAM

18 Mbit

-

8388608 bit

Commercial

PARALLEL

-

CACHE SRAM

-

SRAM

20 mm

14 mm

-

8 Weeks

BGA-165

YES

165

5 ns

GSI Technology

-

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS8321E32AD-333V

333 MHz

200@Flow-Through/333@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

-

Surface Mount

SMD/SMT

32 Bit

1 MWords

1000000

85 °C

-

PLASTIC/EPOXY

LBGA

LBGA,

-

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.81

N

No

FBGA

2.7 V

1.7 V

1.8 V

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 85 °C

Tray

GS8321E32AD

-

-

3A991.B.2.B

Synchronous Burst

-

ALSO OPERATES AT 2.5 V SUPPLY; PIPELINE MODE

-

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2 V

-

OTHER

1.7 V

36 Mbit

4

SYNCHRONOUS

270 mA, 355 mA

5 ns

Flow-Through/Pipelined

1 M x 32

-

1.4 mm

32

20 Bit

SRAM

36 Mbit

-

33554432 bit

Commercial

PARALLEL

-

CACHE SRAM

-

SRAM

15 mm

13 mm

-

-

BGA-165

-

-

-

GSI Technology

-

QDR

15

-

Parallel

GSI Technology

-

333 MHz

333 MHz

1.9 V

+ 70 C

DDR

1.7 V

0 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

1 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaQuad-II+

1.8000 V

Commercial grade

0 to 85 °C

Tray

GS8342Q37BGD

-

-

-

SigmaQuad-II+ B2

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

36 Mbit

2

-

1.01 A

-

Pipelined

1 M x 36

-

-

-

19 Bit

SRAM

36 Mbit

-

-

Commercial

-

-

-

-

SRAM

-

-

-

-

BGA-119

-

-

-

GSI Technology

-

SDR

14

-

Parallel

GSI Technology

-

167 MHz

-

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

2 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

N

-

FBGA

2.7 V

1.7 V

-

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS864236B

-

-

-

SCD/DCD Pipeline/Flow Through

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

119

-

-

-

-

-

-

72 Mbit

4

-

220 mA, 270 mA

8 ns

Flow-Through/Pipelined

2 M x 36

-

-

-

-

SRAM

72 Mbit

-

-

Commercial

-

-

-

-

SRAM

-

-

-

-

BGA-119

-

-

-

GSI Technology

-

SDR

42

-

Parallel

GSI Technology

-

300 MHz

300 MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

256 kWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

3.6 V

2.3 V

-

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS88237CGB

-

-

-

SCD/DCD Pipeline

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

119

-

-

-

-

-

-

9 Mbit

2

-

245 mA

-

Pipelined

256 k x 36

-

-

-

18 Bit

SRAM

9 Mbit

-

-

Industrial

-

-

-

-

SRAM

-

-

-

-

BGA-165

-

-

-

-

-

QDR

-

-

Parallel

-

-

357 MHz

357 MHz

1.9 V

+ 70 C

-

1.7 V

0 C

-

-

Surface Mount

SMD/SMT

9 Bit

8 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FBGA

1.9 V

1.7 V

-

Synchronous

-

1.8000 V

Commercial grade

0 to 85 °C

-

GS8662Q10BGD

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

165

-

-

-

-

-

-

72 Mbit

2

-

985 mA

-

Pipelined

8 M x 9

-

-

-

22 Bit

-

72 Mbit

-

-

Commercial

-

-

-

-

-

-

-

-

8 Weeks

-

YES

100

12 ns

-

100 MHz

-

-

GSI TECHNOLOGY

-

GSI Technology

GS840H18AGT-100I

-

-

-

-

-

-

-

-

3

-

-

-

262144 words

256000

85 °C

-40 °C

PLASTIC/EPOXY

LQFP

LQFP, QFP100,.63X.87

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

Obsolete

QFP

NOT SPECIFIED

5.7

-

Yes

-

-

-

3.3 V

-

-

-

-

-

-

-

e3

Yes

3A991.B.2.B

-

PURE MATTE TIN

FLOW-THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

SRAMs

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

3.6 V

2.5/3.3,3.3 V

INDUSTRIAL

3 V

-

-

SYNCHRONOUS

0.2 mA

-

-

256KX18

3-STATE

1.6 mm

18

-

-

-

0.03 A

4718592 bit

-

PARALLEL

COMMON

CACHE SRAM

3.14 V

-

20 mm

14 mm

-

-

BGA-165

-

-

-

-

-

DDR

-

-

Parallel

-

-

300 MHz

300 MHz

1.9 V

+ 85 C

-

1.7 V

- 40 C

-

-

Surface Mount

SMD/SMT

8 Bit

16 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FBGA

1.9 V

1.7 V

-

Synchronous

-

1.8000 V

Industrial grade

-40 to 100 °C

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

165

-

-

-

-

-

-

144 Mbit

1

-

700 mA

-

Pipelined

16 M x 8

-

-

-

23 Bit

-

144 Mbit

-

-

Industrial

-

-

-

-

-

-

-

-

-

TQFP-100

-

-

-

GSI Technology

-

SDR

66

-

Parallel

GSI Technology

-

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

512 kWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

TQFP

2.7 V

1.7 V

-

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 85 °C

Tray

GS880E18CGT

-

-

-

DCD

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

100

-

-

-

-

-

-

9 Mbit

2

-

125 mA, 160 mA

6.5 ns

Flow-Through/Pipelined

512 k x 18

-

-

-

18 Bit

SRAM

9 Mbit

-

-

Industrial

-

-

-

-

SRAM

-

-

-

10 Weeks

BGA-165

YES

165

0.45 ns

GSI Technology

450 MHz

QDR

15

GSI TECHNOLOGY

Parallel

GSI Technology

GS8342D06BD-450I

450 MHz

450 MHz

1.9 V

+ 85 C

DDR

1.7 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

8 Bit

4 MWords

4000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

-

5.22

-

No

FBGA

1.9 V

1.7 V

1.8 V

Synchronous

SigmaQuad-II+

1.8000 V

Industrial grade

-40 to 100 °C

Tray

GS8342D06BD

-

-

3A991.B.2.B

SigmaQuad-II+

-

PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

-

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

1.9 V

1.5/1.8,1.8 V

INDUSTRIAL

1.7 V

36 Mbit

2

SYNCHRONOUS

795 mA

-

Pipelined

4 M x 8

3-STATE

1.4 mm

8

20 Bit

SRAM

36 Mbit

0.25 A

33554432 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

SRAM

15 mm

13 mm

-

-

BGA-165

-

-

-

-

-

SDR

-

-

Parallel

-

-

400 MHz

250@Flow-Through/400@Pipelined MHz

2.7, 3.6 V

+ 70 C

-

2.3, 3 V

0 C

-

-

Surface Mount

SMD/SMT

32 Bit

1 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FBGA

3.6 V

2.3 V

-

Synchronous

-

2.5, 3.3 V

Commercial grade

0 to 85 °C

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

165

-

-

-

-

-

-

36 Mbit

4

-

285 mA, 395 mA

4 ns

Flow-Through/Pipelined

1 M x 32

-

-

-

20 Bit

-

36 Mbit

-

-

Commercial

-

-

-

-

-

-

-

-

8 Weeks

BGA-165

YES

165

0.45 ns

GSI Technology

400 MHz

QDR

15

GSI TECHNOLOGY

Parallel

GSI Technology

GS8662D18BD-400I

400 MHz

400 MHz

1.9 V

+ 85 C

DDR

1.7 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

4 MWords

4000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

-

5.35

-

No

FBGA

1.9 V

1.7 V

1.8 V

Synchronous

SigmaQuad-II

1.8000 V

Industrial grade

-40 to 100 °C

Tray

GS8662D18BD

-

-

3A991.B.2.B

SigmaQuad-II

-

PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

-

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

1.9 V

1.5/1.8,1.8 V

INDUSTRIAL

1.7 V

72 Mbit

2

SYNCHRONOUS

745 mA

-

Pipelined

4 M x 18

3-STATE

1.4 mm

18

20 Bit

SRAM

72 Mbit

-

75497472 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

SRAM

15 mm

13 mm

-

-

TQFP-100

-

-

-

GSI Technology

-

SDR

18

-

Parallel

GSI Technology

-

200 MHz

133.3@Flow-Through/200@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

2 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

TQFP

2.7 V

1.7 V

-

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS864036GT

-

-

-

Synchronous Burst

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

100

-

-

-

-

-

-

72 Mbit

4

-

230 mA, 310 mA

7.5 ns

Flow-Through/Pipelined

2 M x 36

-

-

-

21 Bit

SRAM

72 Mbit

-

-

Commercial

-

-

-

-

SRAM

-

-

-

8 Weeks

TQFP-100

YES

100

4 ns

GSI Technology

-

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS832018AGT-400

400 MHz

250@Flow-Through/400@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

2 MWords

2000000

85 °C

-

PLASTIC/EPOXY

LQFP

LQFP,

-

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.34

Details

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 85 °C

Tray

GS832018AGT

-

-

3A991.B.2.B

Pipeline/Flow Through

-

ALSO OPERATES AT 3.3; SYNCHRONOUS BURST

-

Memory & Data Storage

CMOS

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2.7 V

-

OTHER

2.3 V

36 Mbit

2

SYNCHRONOUS

265 mA, 355 mA

4 ns

Flow-Through/Pipelined

2 M x 18

-

1.6 mm

18

21 Bit

SRAM

36 Mbit

-

37748736 bit

Commercial

PARALLEL

-

CACHE SRAM

-

SRAM

20 mm

14 mm

-

10 Weeks

BGA-165

YES

165

0.45 ns

GSI Technology

300 MHz

QDR

15

GSI TECHNOLOGY

Parallel

GSI Technology

GS8342QT19BGD-300I

300 MHz

300 MHz

1.9 V

+ 85 C

DDR

1.7 V

- 40 C

Yes

3

Surface Mount

SMD/SMT

18 Bit

2 MWords

2000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.22

Details

Yes

FBGA

1.9 V

1.7 V

1.8 V

Synchronous

SigmaQuad-II+

1.8000 V

Industrial grade

-40 to 100 °C

Tray

GS8342QT19BGD

e1

Yes

3A991.B.2.B

SigmaQuad-II+ B2

Tin/Silver/Copper (Sn/Ag/Cu)

PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

1.9 V

1.5/1.8,1.8 V

INDUSTRIAL

1.7 V

36 Mbit

2

SYNCHRONOUS

785 mA

-

Pipelined

2 M x 18

3-STATE

1.4 mm

18

20 Bit

SRAM

36 Mbit

-

37748736 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

SRAM

15 mm

13 mm

-

-

BGA-165

-

-

-

GSI Technology

-

DDR

10

-

Parallel

GSI Technology

-

300 MHz

300 MHz

1.9 V

+ 70 C

DDR-II

1.7 V

0 C

Yes

-

Surface Mount

SMD/SMT

8 Bit

16 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

N

-

-

1.9 V

1.7 V

-

Synchronous

SigmaDDR-II+

1.8000 V

Commercial grade

0 to 85 °C

Tray

GS81302T07E

-

-

-

SigmaDDR-II+ B2

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

144 Mbit

1

-

690 mA

-

Pipelined

16 M x 8

-

-

-

23 Bit

SRAM

144 Mbit

-

-

Commercial

-

-

-

-

SRAM

-

-

-

-

BGA-165

-

-

-

GSI Technology

-

DDR

15

-

Parallel

GSI Technology

-

400 MHz

400 MHz

1.9 V

+ 70 C

DDR-II

1.7 V

0 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

4 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

N

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaDDR-II

1.8000 V

Commercial grade

0 to 85 °C

Tray

GS8662T18BD

-

-

-

SigmaDDR-II B2

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

72 Mbit

1

-

625 mA

-

Pipelined

4 M x 18

-

-

-

22 Bit

SRAM

72 Mbit

-

-

Commercial

-

-

-

-

SRAM

-

-

-

-

TQFP-100

-

-

-

GSI Technology

-

SDR

66

-

Parallel

GSI Technology

-

-

133.3 MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

256 kWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

TQFP

2.7 V

1.7 V

-

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS880F36CGT

-

-

-

Flow Through

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

100

-

-

-

-

-

-

9 Mbit

4

-

110 mA

7.5 ns

Flow-Through

256 k x 36

-

-

-

18 Bit

SRAM

9 Mbit

-

-

Commercial

-

-

-

-

SRAM

-

-