- Organization
- Memory Size
- Mounting Styles
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- Supply Voltage-Max
- Supply Voltage-Min
- Interface Type
- Maximum Operating Temperature
- Minimum Operating Temperature
- Supply Current-Max
- Maximum Clock Frequency
- Manufacturer
Attribute column
Manufacturer
GSI Memory
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Factory Lead Time | Package / Case | Surface Mount | Number of Terminals | Access Time-Max | Brand | Clock Frequency-Max (fCLK) | Data Rate Architecture | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Maximum Clock Frequency | Maximum Clock Rate | Maximum Operating Supply Voltage | Maximum Operating Temperature | Memory Types | Minimum Operating Supply Voltage | Minimum Operating Temperature | Moisture Sensitive | Moisture Sensitivity Levels | Mounting | Mounting Styles | Number of I/O Lines | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Timing Type | Tradename | Typical Operating Supply Voltage | Usage Level | Operating Temperature | Packaging | Series | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Memory Size | Number of Ports | Operating Mode | Supply Current-Max | Access Time | Architecture | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Product Type | Density | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Product Category | Length | Width | Radiation Hardening |
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 GS8182T36BD-400I GSI Technology | In Stock | - | - | - | - | - | - | - | - | - | DDR | - | - | - | - | - | - | 400 MHz | 1.9 V | - | - | 1.7 V | - | - | - | Surface Mount | - | 36 Bit | 512 kWords | - | - | - | - | - | - | - | - | - | - | - | - | - | Compliant | - | FBGA | - | - | - | Synchronous | - | 1.8000 V | Industrial grade | -40 to 85 °C | - | - | - | - | - | - | - | 85 °C | -40 °C | - | - | - | - | - | - | - | - | - | - | 165 | - | - | 1.8 V | - | - | - | - | - | 1 | - | - | - | Pipelined | - | - | - | - | 19 Bit | - | 18 Mbit | - | - | Industrial | - | - | - | - | - | - | - | No | ||
GS882Z36CGB-150IV GSI Technology | In Stock | - | - | - | BGA-119 | - | - | - | GSI Technology | - | SDR | 42 | - | Parallel | GSI Technology | - | 150 MHz | 133.3@Flow-Through/150@Pipelined MHz | 2, 2.7 V | + 85 C | SDR | 1.7, 2.3 V | - 40 C | Yes | - | Surface Mount | SMD/SMT | 36 Bit | 256 kWords | - | - | - | - | - | - | - | - | - | - | - | - | - | Compliant | - | FBGA | 2.7 V | 1.7 V | - | Synchronous | NBT SRAM | 1.8, 2.5 V | Industrial grade | -40 to 85 °C | Tray | GS882Z36CGB | - | - | - | NBT | - | 85 °C | -40 °C | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 119 | - | - | - | - | - | - | - | 9 Mbit | 4 | - | 130 mA, 145 mA | 7.5 ns | Flow-Through/Pipelined | 256 k x 36 | - | - | - | 18 Bit | SRAM | 9 Mbit | - | - | Industrial | - | - | - | - | SRAM | - | - | No | ||
GS8640FZ18GT-5.5 GSI Technology | In Stock | - | - | 8 Weeks | TQFP-100 | YES | 100 | 5.5 ns | - | - | SDR | - | GSI TECHNOLOGY | Parallel | GSI Technology | GS8640FZ18GT-5.5 | - | 181.8 MHz | 3.6 V | + 70 C | - | 3 V | 0 C | - | 3 | Surface Mount | SMD/SMT | 18 Bit | 4 MWords | 4000000 | 70 °C | - | PLASTIC/EPOXY | LQFP | LQFP, | - | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.62 | Compliant | Yes | TQFP | 3.6 V | 2.3 V | 2.5 V | Synchronous | - | 3.3000 V | Commercial grade | 0 to 70 °C | - | GS8640FZ18GT | e3 | Yes | 3A991.B.2.B | - | Matte Tin (Sn) | 70 °C | 0 °C | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY. | 8542.32.00.41 | - | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 3.3 V | 2.75 V | - | COMMERCIAL | 2.25 V | 72 Mbit | 2 | SYNCHRONOUS | 270 mA | 5.5 ns | Flow-Through | 4 M x 18 | - | 1.6 mm | 18 | 22 Bit | - | 72 Mbit | - | 75497472 bit | Commercial | PARALLEL | - | ZBT SRAM | - | - | 20 mm | 14 mm | No | ||
GS88236CGB-300 GSI Technology | In Stock | - | - | 8 Weeks | BGA-119 | YES | 119 | 5 ns | GSI Technology | - | - | 42 | GSI TECHNOLOGY | Parallel | GSI Technology | GS88236CGB-300 | 300 MHz | - | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | 3 | - | SMD/SMT | 36 Bit | 262144 words | 256000 | 70 °C | - | PLASTIC/EPOXY | BGA | BGA, | - | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.13 | Compliant | Yes | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | SyncBurst | 2.5, 3.3 V | Commercial grade | 0 to 70 °C | Tray | GS88236CGB | e1 | Yes | 3A991.B.2.B | Pipeline/Flow Through | Tin/Silver/Copper (Sn/Ag/Cu) | 70 °C | 0 °C | PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | - | 2.7 V | - | COMMERCIAL | 2.3 V | 9 Mbit | 4 | SYNCHRONOUS | 165 mA, 225 mA | 5@Flow-Through/2.5@P | - | 256 k x 36 | - | 1.77 mm | 36 | 18 b | SRAM | 9 Mb | - | 9 | Commercial | PARALLEL | - | CACHE SRAM | - | SRAM | 22 mm | 14 mm | No | ||
GS8322Z72C-250 GSI Technology | In Stock | - | - | - | BGA-209 | - | - | - | GSI Technology | - | SDR | 14 | - | Parallel | GSI Technology | - | 250 MHz | - | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | - | Surface Mount | SMD/SMT | 72 Bit | 512 kWords | - | - | - | - | - | - | - | - | - | - | - | - | - | Compliant | - | FBGA | 3.6 V | 2.3 V | - | Synchronous | NBT SRAM | 2.5, 3.3 V | Commercial grade | 0 to 70 °C | Tray | GS8322Z72C | - | - | - | NBT Pipeline/Flow Through | - | 70 °C | 0 °C | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 209 | - | - | - | - | - | - | - | 36 Mbit | 8 | - | 275 mA, 380 mA | 6.5 ns | Flow-Through/Pipelined | 512 k x 72 | - | - | - | 19 b | SRAM | 36 Mbit | - | - | Commercial | - | - | - | - | SRAM | - | - | No | ||
GS8673EQ18BGK-725S GSI Technology | In Stock | - | - | - | BGA-260 | - | - | - | GSI Technology | - | - | 8 | - | Parallel | GSI Technology | - | 725 MHz | - | - | + 85 C | QDR-III | - | 0 C | Yes | - | - | SMD/SMT | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Compliant | - | - | 1.4 V | 1.3 V | - | - | SigmaQuad-IIIe | - | - | - | Tray | GS8673EQ18BGK | - | - | - | SigmaQuad-IIIe B2 | - | 70 °C | 0 °C | - | - | Memory & Data Storage | - | - | - | - | - | - | - | - | - | - | 1.35 V | - | - | - | - | 72 Mbit | - | - | 2.38 A | - | - | 4 M x 18 | - | - | - | 21 b | SRAM | 72 Mb | - | - | - | - | - | - | - | SRAM | - | - | No | ||
GS8640E32GT-167V GSI Technology | In Stock | - | - | - | TQFP-100 | - | - | - | GSI Technology | - | SDR | 18 | - | Parallel | GSI Technology | - | 167 MHz | 125@Flow-Through/167@Pipelined MHz | 2, 2.7 V | + 70 C | SDR | 1.7, 2.3 V | 0 C | Yes | - | Surface Mount | SMD/SMT | 32 Bit | 2 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | Compliant | - | TQFP | 2.7 V | 1.7 V | - | Synchronous | SyncBurst | 1.8, 2.5 V | Commercial grade | 0 to 70 °C | Tray | GS8640E32GT | - | - | - | DCD | - | 70 °C | 0 °C | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 100 | - | - | - | - | - | - | - | 72 Mbit | 4 | - | 220 mA, 270 mA | 8 ns | Flow-Through/Pipelined | 2 M x 32 | - | - | - | 21 Bit | SRAM | 64 Mbit | - | - | Commercial | - | - | - | - | SRAM | - | - | No | ||
GS81302D37GE-350 GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | GSI Technology | - | QDR | 10 | - | Parallel | GSI Technology | - | 350 MHz | 350 MHz | - | + 70 C | QDR-II | - | 0 C | Yes | - | Surface Mount | SMD/SMT | 36 Bit | 4 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | Compliant | - | FBGA | 1.9 V | 1.7 V | - | Synchronous | SigmaQuad-II+ | 1.8000 V | Commercial grade | 0 to 85 °C | Bulk | GS81302D37GE | - | - | - | SigmaQuad-II+ B4 | - | 85 °C | 0 °C | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 165 | - | - | 1.8 V | - | - | - | - | 144 Mbit | 2 | - | 1.055 A | - | Pipelined | 4 M x 36 | - | - | - | 20 Bit | SRAM | 144 Mbit | - | - | Commercial | - | - | - | - | SRAM | - | - | No | ||
GS8342DT07BD-350I GSI Technology | In Stock | - | - | 10 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 350 MHz | QDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8342DT07BD-350I | 350 MHz | 350 MHz | 1.9 V | + 85 C | DDR | 1.7 V | - 40 C | Yes | - | Surface Mount | SMD/SMT | 8 Bit | 4 MWords | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.22 | Compliant | No | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaQuad-II+ | 1.8000 V | Industrial grade | -40 to 100 °C | Bulk | GS8342DT07BD | e0 | No | 3A991.B.2.B | SigmaQuad-II+ B4 | Tin/Lead (Sn/Pb) | 100 °C | -40 °C | - | - | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.8 V | 1.9 V | 1.5/1.8,1.8 V | INDUSTRIAL | 1.7 V | 36 Mbit | 2 | SYNCHRONOUS | 675 mA | - | Pipelined | 4 M x 8 | 3-STATE | 1.4 mm | 8 | 20 Bit | SRAM | 36 Mbit | - | 33554432 bit | Industrial | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | SRAM | 15 mm | 13 mm | No | ||
GS880F32CGT-5.5V GSI Technology | In Stock | - | - | - | TQFP-100 | - | - | - | GSI Technology | - | SDR | 66 | - | Parallel | GSI Technology | - | - | 181.8 MHz | 2, 2.7 V | + 70 C | SDR | 1.7, 2.3 V | 0 C | Yes | - | Surface Mount | SMD/SMT | 32 Bit | 256 kWords | - | - | - | - | - | - | - | - | - | - | - | - | - | Compliant | - | TQFP | 2.7 V | 1.7 V | - | Synchronous | SyncBurst | 1.8, 2.5 V | Commercial grade | 0 to 70 °C | Tray | GS880F32CGT | - | - | - | Flow Through | - | 70 °C | 0 °C | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 100 | - | - | - | - | - | - | - | 9 Mbit | 4 | - | 140 mA | 5.5 ns | Flow-Through | 256 k x 32 | - | - | - | 18 Bit | SRAM | 8 Mbit | - | - | Commercial | - | - | - | - | SRAM | - | - | No | ||
GS8342DT19BGD-400I GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | - | - | QDR | - | - | Parallel | - | - | 400 MHz | 400 MHz | 1.9 V | + 85 C | - | 1.7 V | - 40 C | - | - | Surface Mount | SMD/SMT | 18 Bit | 2 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | Compliant | - | FBGA | 1.9 V | 1.7 V | - | Synchronous | - | 1.8000 V | Industrial grade | -40 to 100 °C | Bulk | - | - | - | - | - | - | 100 °C | -40 °C | - | - | - | - | - | - | - | - | - | - | 165 | - | - | 1.8 V | - | - | - | - | 36 Mbit | 2 | - | 715 mA | - | Pipelined | 2 M x 18 | - | - | - | 19 Bit | - | 36 Mbit | - | - | Industrial | - | - | - | - | - | - | - | No | ||
GS832136AD-333IV GSI Technology | In Stock | - | - | 8 Weeks | BGA-165 | YES | 165 | 5 ns | GSI Technology | - | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS832136AD-333IV | 333 MHz | 200@Flow-Through/333@Pipelined MHz | 2, 2.7 V | + 85 C | SDR | 1.7, 2.3 V | - 40 C | Yes | - | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | - | - | PLASTIC/EPOXY | LBGA | LBGA, | - | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.7 | Compliant | No | FBGA | 2.7 V | 1.7 V | 1.8 V | Synchronous | SyncBurst | 1.8, 2.5 V | Industrial grade | -40 to 100 °C | Bulk | GS832136AD | - | - | 3A991.B.2.B | Synchronous Burst | - | 100 °C | -40 °C | PIPELINE OR FLOW THROUGH ARCHITECTURE; ALSO OPERATES AT 2.5 SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | - | 2 V | - | - | 1.7 V | 36 Mbit | 4 | SYNCHRONOUS | 290 mA, 375 mA | 5 ns | Flow-Through/Pipelined | 1 M x 36 | - | 1.4 mm | 36 | 20 Bit | SRAM | 36 Mbit | - | 37748736 bit | Industrial | PARALLEL | - | CACHE SRAM | - | SRAM | 15 mm | 13 mm | No | ||
GS81302D06E-350 GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | GSI Technology | - | QDR | 10 | - | Parallel | GSI Technology | - | 350 MHz | 350 MHz | 1.9 V | + 70 C | QDR-II | 1.7 V | 0 C | Yes | - | Surface Mount | SMD/SMT | 8 Bit | 16 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | Compliant | - | FBGA | 1.9 V | 1.7 V | - | Synchronous | SigmaQuad-II+ | 1.8000 V | Commercial grade | 0 to 85 °C | Bulk | GS81302D06E | - | - | - | SigmaQuad-II+ | - | 85 °C | 0 °C | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 165 | - | - | 1.8 V | - | - | - | - | 144 Mbit | 2 | - | 940 mA | - | Pipelined | 16 M x 8 | - | - | - | 22 Bit | SRAM | 144 Mbit | - | - | Commercial | - | - | - | - | SRAM | - | - | No | ||
GS864032GT-300 GSI Technology | In Stock | - | - | - | TQFP-100 | - | - | - | GSI Technology | - | SDR | 18 | - | Parallel | GSI Technology | - | 300 MHz | 181.8@Flow-Through/300@Pipelined MHz | 3.6 V | + 70 C | SDR | 3 V | 0 C | Yes | - | Surface Mount | SMD/SMT | 32 Bit | 2 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | Compliant | - | TQFP | 3.6 V | 2.3 V | - | Synchronous | SyncBurst | 3.3000 V | Commercial grade | 0 to 70 °C | Tray | GS864032GT | - | - | - | Pipeline/Flow Through | - | 70 °C | 0 °C | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 100 | - | - | 3.3 V | - | - | - | - | 72 Mbit | 4 | - | 300 mA, 420 mA | 5.5 ns | Flow-Through/Pipelined | 2 M x 32 | - | - | - | 21 Bit | SRAM | 64 Mbit | - | - | Commercial | - | - | - | - | SRAM | - | - | No | ||
GS8662T36BD-333 GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | GSI Technology | - | - | 15 | - | Parallel | GSI Technology | - | 333 MHz | - | 1.9 V | + 70 C | DDR | 1.7 V | 0 C | Yes | - | - | SMD/SMT | 36 Bit | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Compliant | - | FBGA | 1.9 V | 1.7 V | - | - | SigmaDDR-II | 1.8000 V | - | 0 to 85 °C | Bulk | GS8662T36BD | - | - | - | SigmaDDR-II B2 | - | 85 °C | 0 °C | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 165 | - | - | 1.8 V | - | - | - | - | 72 Mbit | 1 | - | 685 mA | 0.45 | - | 2 M x 36 | - | - | - | 21 b | SRAM | 72 Mb | - | 72 | - | - | - | - | - | SRAM | - | - | No | ||
GS8182T09BGD-333I GSI Technology | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 85 °C | -40 °C | - | - | - | - | - | - | - | - | - | - | - | - | - | 1.8 V | - | - | - | - | - | 1 | - | - | - | - | - | - | - | - | 20 b | - | 18 Mb | - | - | - | - | - | - | - | - | - | - | No | ||
GS8662DT38BD-400 GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | GSI Technology | - | QDR | 15 | - | Parallel | GSI Technology | - | 400 MHz | 400 MHz | - | + 70 C | DDR | - | 0 C | Yes | - | Surface Mount | SMD/SMT | 36 Bit | 2 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | Compliant | - | FBGA | 1.9 V | 1.7 V | - | Synchronous | SigmaQuad-II+ | 1.8000 V | Commercial grade | 0 to 85 °C | Bulk | GS8662DT38BD | - | - | - | SigmaQuad-II+ | - | 85 °C | 0 °C | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 165 | - | - | 1.8 V | - | - | - | - | 72 Mbit | 2 | - | 940 mA | - | Pipelined | 2 M x 36 | - | - | - | 19 Bit | SRAM | 72 Mbit | - | - | Commercial | - | - | - | - | SRAM | - | - | No | ||
GS81302T10E-350 GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | GSI Technology | - | DDR | 10 | - | Parallel | GSI Technology | - | 350 MHz | 350 MHz | 1.9 V | + 70 C | DDR-II | 1.7 V | 0 C | Yes | - | Surface Mount | SMD/SMT | 9 Bit | 16 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | Compliant | - | FBGA | 1.9 V | 1.7 V | - | Synchronous | SigmaDDR-II+ | 1.8000 V | Commercial grade | 0 to 85 °C | Bulk | GS81302T10E | - | - | - | SigmaDDR-II+ B2 | - | 85 °C | 0 °C | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 165 | - | - | 1.8 V | - | - | - | - | 144 Mbit | 1 | - | 800 mA | - | Pipelined | 16 M x 9 | - | - | - | 23 Bit | SRAM | 144 Mbit | - | - | Commercial | - | - | - | - | SRAM | - | - | No | ||
GS832236AGD-375I GSI Technology | In Stock | - | - | 8 Weeks | BGA-165 | YES | 165 | 4.2 ns | GSI Technology | 375 MHz | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS832236AGD-375I | 375 MHz | 238@Flow-Through/375@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | 3 | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.12 | Compliant | Yes | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | SyncBurst | 2.5, 3.3 V | Industrial grade | -40 to 100 °C | Bulk | GS832236AGD | e1 | Yes | 3A991.B.2.B | Pipeline/Flow Through | TIN SILVER COPPER | 100 °C | -40 °C | ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | - | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | 36 Mbit | 4 | SYNCHRONOUS | 290 mA, 400 mA | 4.2 ns | Flow-Through/Pipelined | 1 M x 36 | 3-STATE | 1.4 mm | 36 | 20 Bit | SRAM | 36 Mbit | 0.04 A | 37748736 bit | Industrial | PARALLEL | COMMON | CACHE SRAM | 2.3 V | SRAM | 15 mm | 13 mm | No | ||
GS8662T37BD-333I GSI Technology | In Stock | - | - | 8 Weeks | BGA-165 | YES | 165 | 0.45 ns | - | - | DDR | - | GSI TECHNOLOGY | Parallel | GSI Technology | GS8662T37BD-333I | 333 MHz | 333 MHz | 1.9 V | + 85 C | - | 1.7 V | - 40 C | - | - | Surface Mount | SMD/SMT | 36 Bit | 2 MWords | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, | - | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.44 | Compliant | No | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | - | 1.8000 V | Industrial grade | -40 to 100 °C | Bulk | - | e0 | No | 3A991.B.2.B | - | Tin/Lead (Sn/Pb) | 100 °C | -40 °C | PIPELINED ARCHITECTURE, LATE WRITE | 8542.32.00.41 | - | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.8 V | 1.9 V | - | INDUSTRIAL | 1.7 V | 72 Mbit | 1 | SYNCHRONOUS | 695 mA | - | Pipelined | 2 M x 36 | - | 1.4 mm | 36 | 20 Bit | - | 72 Mbit | - | 75497472 bit | Industrial | PARALLEL | - | DDR SRAM | - | - | 15 mm | 13 mm | No |