-

10 Weeks

-

TQFP-100

YES

-

100

7.5 ns

-

GSI Technology

-

SDR

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS8160Z36DGT-150I

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2.7, 3.6 V

+ 100 C

SDR

-

2.3, 3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

512 kWords

1000000

85 °C

-40 °C

-

PLASTIC/EPOXY

LQFP

LQFP,

-

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

-

NOT SPECIFIED

5.34

Details

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

-

Industrial grade

-40 to 100 °C

Tray

GS8160Z36DGT

-

-

3A991.B.2.B

NBT Pipeline/Flow Through

-

-

-

PIPELINE ARCHITECTURE, FLOW-THROUGH, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

-

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

-

2.7 V

-

INDUSTRIAL

2.3 V

18 Mbit

4

SYNCHRONOUS

-

200 mA, 210 mA

7.5 ns

-

-

Flow-Through/Pipelined

512 k x 36

-

1.6 mm

18

-

19 Bit

SRAM

18 Mbit

-

18874368 bit

Industrial

PARALLEL

-

ZBT SRAM

-

SRAM

-

20 mm

14 mm

-

-

10 Weeks

-

BGA-165

YES

-

165

5.5 ns

-

GSI Technology

-

-

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS816136DD-250I

250 MHz

-

-

+ 85 C

SDR

-

-

- 40 C

Yes

-

-

SMD/SMT

-

524288 words

512000

85 °C

-40 °C

-

PLASTIC/EPOXY

LBGA

LBGA,

-

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

-

NOT SPECIFIED

4.95

Compliant

No

-

3.6 V

2.3 V

2.5 V

-

SyncBurst

-

-

-

-

Bulk

GS816136DD

-

-

3A991.B.2.B

Pipeline/Flow Through

-

85 °C

-40 °C

FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

-

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

-

-

2.7 V

-

INDUSTRIAL

2.3 V

18 Mbit

4

SYNCHRONOUS

-

250 mA, 270 mA

5.5 ns

-

-

-

512 k x 36

-

1.4 mm

36

-

19 b

SRAM

18 Mb

-

18874368 bit

-

PARALLEL

-

CACHE SRAM

-

SRAM

-

15 mm

13 mm

No

-

-

-

TQFP-100

YES

-

100

-

-

GSI Technology

-

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS8160F36DGT-7.5I

-

133.3 MHz

2.7, 3.6 V

+ 100 C

SDR

-

2.3, 3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

512 kWords

512000

-

-

-

PLASTIC/EPOXY

LQFP

LQFP,

-

RECTANGULAR

FLATPACK, LOW PROFILE

Active

-

-

NOT SPECIFIED

5.47

Details

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

-

Industrial grade

-40 to 85 °C

Tray

GS8160F36DGT

-

-

3A991.B.2.B

Flow Through

-

-

-

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

8542.32.00.41

Memory & Data Storage

CMOS

-

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

100

R-PQFP-G100

-

-

2.7 V

-

-

2.3 V

18 Mbit

4

SYNCHRONOUS

-

210 mA

7.5 ns

-

-

Flow-Through

512 k x 36

-

1.6 mm

36

-

19 Bit

SRAM

18 Mbit

-

18874368 bit

Industrial

PARALLEL

-

CACHE SRAM

-

SRAM

-

20 mm

14 mm

-

-

8 Weeks

-

TQFP-100

YES

-

100

7.5 ns

-

GSI Technology

-

SDR

72

GSI TECHNOLOGY

Parallel

GSI Technology

GS88032CGT-150

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

-

2.3, 3 V

0 C

Yes

3

Surface Mount

SMD/SMT

32 Bit

256 kWords

256000

70 °C

-

-

PLASTIC/EPOXY

LQFP

LQFP, QFP100,.63X.87

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

-

NOT SPECIFIED

4.9

Details

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

-

Commercial grade

0 to 70 °C

Tray

GS88032CGT

e3

Yes

3A991.B.2.B

Pipeline/Flow Through

PURE MATTE TIN

-

-

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

-

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

-

2.7 V

2.5/3.3 V

COMMERCIAL

2.3 V

9 Mbit

4

SYNCHRONOUS

-

130 mA, 140 mA

7.5 ns

-

-

Flow-Through/Pipelined

256 k x 32

3-STATE

1.6 mm

32

-

18 Bit

SRAM

9 Mbit

0.025 A

8388608 bit

Commercial

PARALLEL

COMMON

CACHE SRAM

2.3 V

SRAM

-

20 mm

14 mm

-

-

10 Weeks

-

TQFP-100

YES

-

100

7.5 ns

-

GSI Technology

-

SDR

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS8160Z18DGT-150

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

-

2.3, 3 V

0 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

1 MWords

1000000

70 °C

-

-

PLASTIC/EPOXY

LQFP

LQFP,

-

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

-

NOT SPECIFIED

1.71

Details

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

-

Commercial grade

0 to 85 °C

Tray

GS8160Z18DGT

-

-

3A991.B.2.B

NBT Pipeline/Flow Through

-

-

-

PIPELINE ARCHITECTURE, FLOW-THROUGH, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

-

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

-

2.7 V

-

COMMERCIAL

2.3 V

18 Mbit

2

SYNCHRONOUS

-

170 mA, 180 mA

7.5 ns

-

-

Flow-Through/Pipelined

1 M x 18

-

1.6 mm

18

-

20 Bit

SRAM

18 Mbit

-

18874368 bit

Commercial

PARALLEL

-

ZBT SRAM

-

SRAM

-

20 mm

14 mm

-

-

-

-

-

YES

-

100

6.5 ns

-

-

-

-

-

GSI TECHNOLOGY

-

GSI Technology

GS8161Z36BGT-200

-

-

-

-

-

-

-

-

-

3

-

-

-

524288 words

512000

70 °C

-

-

PLASTIC/EPOXY

LQFP

ROHS COMPLIANT, TQFP-100

-

RECTANGULAR

FLATPACK, LOW PROFILE

Obsolete

QFP

-

NOT SPECIFIED

5.59

-

Yes

-

-

-

2.5 V

-

-

-

-

-

-

-

-

-

Yes

3A991.B.2.B

-

Pure Matte Tin (Sn)

-

-

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

-

CMOS

-

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

-

2.7 V

-

COMMERCIAL

2.3 V

-

-

SYNCHRONOUS

-

-

-

-

-

-

512KX36

-

1.6 mm

36

-

-

-

-

-

18874368 bit

-

PARALLEL

-

ZBT SRAM

-

-

-

20 mm

14 mm

-

-

-

-

-

YES

-

100

7.5 ns

-

-

-

-

-

GSI TECHNOLOGY

-

GSI Technology

GS8320Z36GT-200I

-

-

-

-

-

-

-

-

-

3

-

-

-

1048576 words

1000000

85 °C

-40 °C

-

PLASTIC/EPOXY

LQFP

LQFP,

-

RECTANGULAR

FLATPACK, LOW PROFILE

Obsolete

QFP

-

NOT SPECIFIED

5.68

Compliant

Yes

-

-

-

2.5 V

-

-

-

-

-

-

-

-

e3

Yes

3A991.B.2.B

-

PURE MATTE TIN

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

-

CMOS

-

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

-

2.7 V

-

INDUSTRIAL

2.3 V

-

4

SYNCHRONOUS

-

-

-

-

-

-

1MX36

-

1.6 mm

36

-

20 b

-

36 Mb

-

37748736 bit

-

PARALLEL

-

ZBT SRAM

-

-

-

20 mm

14 mm

No

-

8 Weeks

Surface Mount

100-LQFP

YES

100-TQFP (20x14)

100

5.5 ns

GS8320Z

-

250 MHz

SDR

-

GSI TECHNOLOGY

-

GSI Technology

GS8320Z36AGT-250I

-

181.8@Flow-Through/250@Pipelined MHz

2.7, 3.6 V

-

Volatile

GSI Technology Inc.

2.3, 3 V

-

-

-

Surface Mount

-

36 Bit

1 MWords

1000000

85 °C

-40 °C

Tray

PLASTIC/EPOXY

LQFP

LQFP, QFP100,.63X.87

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

Active

NOT SPECIFIED

4.85

Compliant

Yes

TQFP

-

-

2.5 V

Synchronous

-

2.5, 3.3 V

-

Industrial grade

-40 to 100 °C

Bulk

-

-

-

3A991.B.2.B

-

-

100 °C

-40 °C

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

-

SRAMs

SRAM - Synchronous, ZBT

2.3V ~ 2.7V, 3V ~ 3.6V

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

-

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

36Mbit

4

SYNCHRONOUS

250 MHz

0.27 mA

-

SRAM

Parallel

Flow-Through/Pipelined

1MX36

3-STATE

1.6 mm

36

-

20 Bit

-

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

2.3 V

-

1M x 36

20 mm

14 mm

No

-

10 Weeks

-

TQFP-100

YES

-

100

7.5 ns

-

GSI Technology

-

-

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS8161Z36DGT-150

150 MHz

-

-

+ 70 C

SDR

-

-

0 C

Yes

-

-

SMD/SMT

-

524288 words

512000

70 °C

-

-

PLASTIC/EPOXY

LQFP

LQFP,

-

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

-

NOT SPECIFIED

4.78

Details

Yes

-

3.6 V

2.3 V

2.5 V

-

NBT SRAM

-

-

-

-

Tray

GS8161Z36DGT

-

-

3A991.B.2.B

NBT

-

70 °C

0 °C

ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

-

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

100

R-PQFP-G100

-

-

2.7 V

-

COMMERCIAL

2.3 V

18 Mbit

4

SYNCHRONOUS

-

180 mA, 190 mA

7.5 ns

-

-

-

512 k x 36

-

1.6 mm

36

-

19 b

SRAM

18 Mb

-

18874368 bit

-

PARALLEL

-

ZBT SRAM

-

SRAM

-

20 mm

14 mm

No

-

-

Surface Mount

BGA-165

-

165-FPBGA (13x15)

-

-

GS8662D

GSI Technology

-

QDR

15

-

Parallel

GSI Technology

-

400 MHz

400 MHz

1.9 V

+ 85 C

DDR

GSI Technology Inc.

1.7 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

2 MWords

-

-

-

Tray

-

-

-

-

-

-

-

-

Active

-

-

Compliant

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaQuad-II

1.8000 V

-

Industrial grade

-40 to 100 °C

Bulk

GS8662D36BGD

-

-

-

SigmaQuad-II

-

100 °C

-40 °C

-

-

Memory & Data Storage

SRAM - Quad Port, Synchronous, QDR II

1.7V ~ 1.9V

-

-

-

-

-

-

165

-

-

1.8 V

-

-

-

-

72 Mbit

2

-

400 MHz

950 mA

450 ps

SRAM

Parallel

Pipelined

2 M x 36

-

-

-

-

19 Bit

SRAM

72 Mbit

-

-

Industrial

-

-

-

-

SRAM

2M x 36

-

-

No

-

7 Weeks

Surface Mount

TQFP-100

YES

100-TQFP (20x14)

100

5.5 ns

GS840Z

GSI Technology

250 MHz

-

72

GSI TECHNOLOGY

Parallel

GSI Technology

GS840Z36CGT-250I

250 MHz

-

-

+ 85 C

SDR

GSI Technology Inc.

-

- 40 C

Yes

-

-

SMD/SMT

-

131072 words

128000

85 °C

-40 °C

Tray

PLASTIC/EPOXY

LQFP

LQFP, QFP100,.63X.87

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

Active

NOT SPECIFIED

5.36

Details

Yes

-

3.6 V

2.3 V

2.5 V

-

NBT SRAM

-

-

-

-40°C ~ 100°C (TJ)

Tray

GS840Z36CGT

-

-

3A991.B.2.B

NBT Pipeline/Flow Through

-

-

-

FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

SRAM - Synchronous, ZBT

2.3V ~ 2.7V, 3V ~ 3.6V

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

-

2.7 V

2.5/3.3,3.3 V

INDUSTRIAL

2.3 V

4 Mbit

-

SYNCHRONOUS

250 MHz

175 mA, 215 mA

5.5 ns

SRAM

Parallel

-

128 k x 36

3-STATE

1.6 mm

36

-

-

SRAM

-

0.045 A

4718592 bit

-

PARALLEL

COMMON

ZBT SRAM

3.14 V

SRAM

128K x 36

20 mm

14 mm

-

-

7 Weeks, 4 Days

-

TQFP-100

YES

-

100

12 ns

-

GSI Technology

100 MHz

SDR

72

GSI TECHNOLOGY

Parallel

GSI Technology

GS840Z36CGT-100I

100 MHz

83.3@Flow-Through/100@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

-

2.3, 3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

128 kWords

128000

85 °C

-40 °C

-

PLASTIC/EPOXY

LQFP

LQFP, QFP100,.63X.87

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

-

NOT SPECIFIED

1.81

Details

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

-

Industrial grade

-40 to 100 °C

Tray

GS840Z36CGT

-

-

3A991.B.2.B

NBT Pipeline/Flow Through

-

-

-

FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

-

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

-

2.7 V

2.5/3.3,3.3 V

INDUSTRIAL

2.3 V

4 Mbit

4

SYNCHRONOUS

-

130 mA, 140 mA

12 ns

-

-

Flow-Through/Pipelined

128 k x 36

3-STATE

1.6 mm

36

-

17 Bit

SRAM

4 Mbit

0.045 A

4718592 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

3.14 V

SRAM

-

20 mm

14 mm

-

-

-

-

BGA-165

-

-

-

-

-

GSI Technology

-

SDR

72

-

Parallel

GSI Technology

-

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

-

2.3, 3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

512 kWords

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FBGA

3.6 V

2.3 V

-

Synchronous

SyncBurst

2.5, 3.3 V

-

Industrial grade

-40 to 85 °C

Tray

GS88118CD

-

-

-

Pipeline/Flow Through

-

-

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

165

-

-

-

-

-

-

-

9 Mbit

1

-

-

150 mA, 175 mA

6.5 ns

-

-

Flow-Through/Pipelined

512 k x 18

-

-

-

-

19 Bit

SRAM

9 Mbit

-

-

Industrial

-

-

-

-

SRAM

-

-

-

-

-

-

-

BGA-119

-

-

-

-

-

GSI Technology

-

-

21

-

Parallel

GSI Technology

-

250 MHz

-

-

+ 70 C

SDR

-

-

0 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Compliant

-

-

3.6 V

2.3 V

-

-

SyncBurst

-

-

-

-

Bulk

GS816236DB

-

-

-

Pipeline/Flow Through

-

85 °C

0 °C

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

18 Mbit

4

-

-

230 mA, 250 mA

5.5 ns

-

-

-

512 k x 36

-

-

-

-

19 b

SRAM

18 Mb

-

-

-

-

-

-

-

SRAM

-

-

-

No

-

-

-

TQFP-100

-

-

-

-

-

GSI Technology

-

SDR

72

-

Parallel

GSI Technology

-

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

-

2.3, 3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

256 kWords

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

TQFP

3.6 V

2.3 V

-

Synchronous

SyncBurst

2.5, 3.3 V

0.173855 oz

Industrial grade

-40 to 85 °C

Tray

GS88036CGT

-

-

-

Pipeline/Flow Through

-

-

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

100

-

-

-

-

-

-

-

9 Mbit

4

-

-

150 mA, 160 mA

7.5 ns

-

-

Flow-Through/Pipelined

256 k x 36

-

-

-

-

18 Bit

SRAM

9 Mbit

-

-

Industrial

-

-

-

-

SRAM

-

-

-

-

-

7 Weeks

-

TQFP-100

YES

-

100

7 ns

-

GSI Technology

166 MHz

-

72

GSI TECHNOLOGY

Parallel

GSI Technology

GS840Z36CGT-166I

166 MHz

-

-

+ 85 C

SDR

-

-

- 40 C

Yes

-

-

SMD/SMT

-

131072 words

128000

85 °C

-40 °C

-

PLASTIC/EPOXY

LQFP

LQFP, QFP100,.63X.87

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

-

NOT SPECIFIED

4.93

Details

Yes

-

3.6 V

2.3 V

2.5 V

-

NBT SRAM

-

-

-

-

Tray

GS840Z36CGT

-

-

3A991.B.2.B

NBT Pipeline/Flow Through

-

-

-

FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

-

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

-

2.7 V

2.5/3.3,3.3 V

INDUSTRIAL

2.3 V

4 Mbit

-

SYNCHRONOUS

-

155 mA, 180 mA

7 ns

-

-

-

128 k x 36

3-STATE

1.6 mm

36

-

-

SRAM

-

0.045 A

4718592 bit

-

PARALLEL

COMMON

ZBT SRAM

3.14 V

SRAM

-

20 mm

14 mm

-

-

-

Surface Mount

BGA-165

-

165-FPBGA (13x15)

-

-

GS8161Z18

GSI Technology

-

SDR

36

-

Parallel

GSI Technology

-

333 MHz

222.2@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

GSI Technology Inc.

2.3, 3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

1 MWords

-

-

-

Tray

-

-

-

-

-

-

-

-

Active

-

-

Details

-

FBGA

3.6 V

2.3 V

-

Synchronous

NBT SRAM

2.5, 3.3 V

-

Industrial grade

-40 to 85 °C

Tray

GS8161Z18DGD

-

-

-

NBT

-

-

-

-

-

Memory & Data Storage

SRAM - Synchronous, ZBT

2.3V ~ 2.7V, 3V ~ 3.6V

-

-

-

-

-

-

165

-

-

-

-

-

-

-

18 Mbit

2

-

333 MHz

260 mA, 305 mA

4.5 ns

SRAM

Parallel

Flow-Through/Pipelined

1 M x 18

-

-

-

-

20 Bit

SRAM

18 Mbit

-

-

Industrial

-

-

-

-

SRAM

1M x 18

-

-

-

-

8 Weeks

-

BGA-165

YES

-

165

0.45 ns

-

GSI Technology

-

-

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS8182Q36BGD-200

200 MHz

-

-

+ 70 C

DDR

-

-

0 C

Yes

3

-

SMD/SMT

-

524288 words

512000

70 °C

-

-

PLASTIC/EPOXY

LBGA

LBGA,

-

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

-

NOT SPECIFIED

1.49

Details

Yes

-

1.9 V

1.7 V

1.8 V

-

SigmaQuad-II

-

-

-

-

Tray

GS8182Q36BGD

e1

Yes

3A991.B.2.B

SigmaQuad-II

Tin/Silver/Copper (Sn/Ag/Cu)

-

-

PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

-

BOTTOM

BALL

260

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

-

1.9 V

-

COMMERCIAL

1.7 V

18 Mbit

-

SYNCHRONOUS

-

560 mA

450 ps

-

-

-

512 k x 36

-

1.4 mm

36

-

-

SRAM

-

-

18874368 bit

-

PARALLEL

-

DDR SRAM

-

SRAM

-

15 mm

13 mm

-

-

8 Weeks

-

TQFP-100

YES

-

100

-

-

-

-

SDR

-

GSI TECHNOLOGY

Parallel

GSI Technology

GS8320Z18AGT-200I

200 MHz

200 MHz

2.7, 3.6 V

+ 85 C

-

-

2.3, 3 V

- 40 C

-

-

Surface Mount

SMD/SMT

18 Bit

2 MWords

2000000

-

-

-

PLASTIC/EPOXY

LQFP

LQFP,

-

RECTANGULAR

FLATPACK, LOW PROFILE

Active

-

-

NOT SPECIFIED

4.85

-

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

-

2.5, 3.3 V

-

Industrial grade

-40 to 85 °C

-

-

-

-

3A991.B.2.B

-

-

-

-

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

-

-

CMOS

-

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

100

R-PQFP-G100

-

-

2.7 V

-

-

2.3 V

36 Mbit

2

SYNCHRONOUS

-

205 mA, 240 mA

6.5 ns

-

-

Flow-Through/Pipelined

2 M x 18

-

1.6 mm

18

-

21 Bit

-

36 Mbit

-

37748736 bit

Industrial

PARALLEL

-

ZBT SRAM

-

-

-

20 mm

14 mm

-

-

8 Weeks

-

-

YES

-

100

7.5 ns

-

-

-

-

-

GSI TECHNOLOGY

-

GSI Technology

GS88032CGT-150I

-

-

-

-

-

-

-

-

-

3

-

-

-

262144 words

256000

85 °C

-40 °C

-

PLASTIC/EPOXY

LQFP

LQFP, QFP100,.63X.87

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

-

NOT SPECIFIED

5.37

Compliant

Yes

-

-

-

2.5 V

-

-

-

-

-

-

-

-

e3

Yes

3A991.B.2.B

-

PURE MATTE TIN

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

SRAMs

CMOS

-

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

-

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

-

4

SYNCHRONOUS

-

0.16 mA

-

-

-

-

256KX32

3-STATE

1.6 mm

32

-

18 b

-

9 Mb

0.045 A

8388608 bit

-

PARALLEL

COMMON

CACHE SRAM

2.3 V

-

-

20 mm

14 mm

No