-

8 Weeks

-

Surface Mount

TQFP-100

YES

-

100-TQFP (20x14)

100

5.5 ns

GS864018

GSI Technology

-

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS864018GT-300I

300 MHz

181.8@Flow-Through/300@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

GSI Technology Inc.

2.3, 3 V

- 40 C

Yes

3

Surface Mount

SMD/SMT

18 Bit

4 MWords

4000000

85 °C

-40 °C

Tray

PLASTIC/EPOXY

LQFP

LQFP,

-

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

Active

NOT SPECIFIED

5.33

Details

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

-

Industrial grade

-40 to 85 °C

Tray

GS864018GT

e3

Yes

3A991.B.2.B

Pipeline/Flow Through

PURE MATTE TIN

-

-

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

SRAM - Synchronous, Standard

2.3V ~ 2.7V, 3V ~ 3.6V

QUAD

GULL WING

260

1

0.65 mm

compliant

-

100

R-PQFP-G100

Not Qualified

-

2.7 V

-

INDUSTRIAL

2.3 V

-

-

72 Mbit

2

-

SYNCHRONOUS

300 MHz

290 mA, 390 mA

5.5 ns

SRAM

Parallel

Flow-Through/Pipelined

4 M x 18

-

1.6 mm

18

-

22 Bit

SRAM

72 Mbit

-

75497472 bit

Industrial

PARALLEL

-

-

-

CACHE SRAM

-

SRAM

4M x 18

20 mm

14 mm

-

-

7 Weeks

-

-

BGA-119

YES

-

-

119

7.5 ns

-

-

150 MHz

-

-

GSI TECHNOLOGY

Parallel

GSI Technology

GS842Z18CGB-150

150 MHz

-

-

+ 70 C

-

-

-

0 C

-

-

-

SMD/SMT

-

262144 words

256000

70 °C

-

-

PLASTIC/EPOXY

BGA

BGA, BGA119,7X17,50

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

Active

BGA

-

NOT SPECIFIED

4.89

-

Yes

-

3.6 V

2.3 V

2.5 V

-

-

-

-

-

-

-

-

-

-

3A991.B.2.B

-

-

-

-

FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

SRAMs

CMOS

-

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

-

119

R-PBGA-B119

Not Qualified

-

2.7 V

2.5/3.3 V

COMMERCIAL

2.3 V

-

-

4 Mbit

-

-

SYNCHRONOUS

-

120 mA, 130 mA

7.5 ns

-

-

-

256 k x 18

3-STATE

1.99 mm

18

-

-

-

-

0.025 A

4718592 bit

-

PARALLEL

COMMON

-

-

ZBT SRAM

2.3 V

-

-

22 mm

14 mm

-

-

10 Weeks

-

Surface Mount

BGA-165

YES

-

165-FPBGA (15x13)

165

5.5 ns

GS8162Z18

GSI Technology

-

-

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS8162Z18DGD-250I

250 MHz

-

-

+ 85 C

SDR

GSI Technology Inc.

-

- 40 C

Yes

-

-

SMD/SMT

-

1048576 words

1000000

85 °C

-40 °C

Tray

PLASTIC/EPOXY

LBGA

LBGA,

-

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

Active

NOT SPECIFIED

4.81

Details

Yes

-

3.6 V

2.3 V

2.5 V

-

NBT SRAM

-

0.218543 oz

-

-40°C ~ 100°C (TJ)

Tray

GS8162Z18DGD

-

-

3A991.B.2.B

NBT Pipeline/Flow Through

-

-

-

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

SRAM - Synchronous, ZBT

2.3V ~ 2.7V, 3V ~ 3.6V

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

-

165

R-PBGA-B165

Not Qualified

-

2.7 V

-

INDUSTRIAL

2.3 V

-

-

18 Mbit

-

-

SYNCHRONOUS

250 MHz

230 mA, 250 mA

5.5 ns

SRAM

Parallel

-

1 M x 18

-

1.4 mm

18

-

-

SRAM

-

-

18874368 bit

-

PARALLEL

-

-

-

ZBT SRAM

-

SRAM

1M x 18

15 mm

13 mm

-

-

10 Weeks

-

-

TQFP-100

YES

-

-

100

7.5 ns

-

GSI Technology

-

SDR

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS816118DGT-150I

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

-

2.3, 3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

1 MWords

1000000

85 °C

-40 °C

-

PLASTIC/EPOXY

QFP

QFP,

-

RECTANGULAR

FLATPACK

Active

QFP

-

NOT SPECIFIED

1.66

Details

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

0.112482 oz

Industrial grade

-40 to 85 °C

Tray

GS816118DGT

-

-

3A991.B.2.B

Pipeline/Flow Through

-

-

-

FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

-

QUAD

GULL WING

NOT SPECIFIED

1

-

compliant

-

100

R-PQFP-G100

-

-

2.7 V

-

INDUSTRIAL

2.3 V

-

-

18 Mbit

2

-

SYNCHRONOUS

-

190 mA, 200 mA

7.5 ns

-

-

Flow-Through/Pipelined

1 M x 18

-

-

18

-

20 Bit

SRAM

18 Mbit

-

18874368 bit

Industrial

PARALLEL

-

-

-

CACHE SRAM

-

SRAM

-

-

-

-

-

-

-

-

BGA-165

-

-

-

-

-

-

-

-

SDR

-

-

Parallel

-

-

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2.7, 3.6 V

+ 85 C

-

-

2.3, 3 V

- 40 C

-

-

Surface Mount

SMD/SMT

32 Bit

256 kWords

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FBGA

3.6 V

2.3 V

-

Synchronous

-

2.5, 3.3 V

-

Industrial grade

-40 to 85 °C

-

GS88132CD

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

165

-

-

-

-

-

-

-

-

-

9 Mbit

1

-

-

-

160 mA, 190 mA

6.5 ns

-

-

Flow-Through/Pipelined

256 k x 32

-

-

-

-

18 Bit

-

9 Mbit

-

-

Industrial

-

-

-

-

-

-

-

-

-

-

-

-

8 Weeks

-

-

TQFP-100

YES

-

-

100

7.5 ns

-

GSI Technology

-

SDR

72

GSI TECHNOLOGY

Parallel

GSI Technology

GS880Z18CGT-150I

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

-

2.3, 3 V

- 40 C

Yes

3

Surface Mount

SMD/SMT

18 Bit

512 kWords

512000

85 °C

-40 °C

-

PLASTIC/EPOXY

LQFP

LQFP,

-

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

-

NOT SPECIFIED

4.88

Details

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

-

Industrial grade

-40 to 85 °C

Tray

GS880Z18CGT

e3

Yes

3A991.B.2.B

NBT

Matte Tin (Sn)

-

-

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

-

QUAD

GULL WING

260

1

0.65 mm

compliant

-

100

R-PQFP-G100

Not Qualified

-

2.7 V

-

INDUSTRIAL

2.3 V

-

-

9 Mbit

1

-

SYNCHRONOUS

-

140 mA, 150 mA

7.5 ns

-

-

Flow-Through/Pipelined

512 k x 18

-

1.6 mm

18

-

18 Bit

SRAM

9 Mbit

-

9437184 bit

Industrial

PARALLEL

-

-

-

ZBT SRAM

-

SRAM

-

20 mm

14 mm

-

-

-

-

Surface Mount

TQFP-100

-

-

100-TQFP (20x14)

-

-

GS880Z

GSI Technology

-

SDR

36

-

Parallel

GSI Technology

-

333 MHz

222.2@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

GSI Technology Inc.

2.3, 3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

512 kWords

-

-

-

Tray

-

-

-

-

-

-

-

-

Active

-

-

Details

-

TQFP

3.6 V

2.3 V

-

Synchronous

NBT SRAM

2.5, 3.3 V

-

Industrial grade

-40 to 85 °C

Tray

GS880Z18CGT

-

-

-

NBT

-

-

-

-

-

Memory & Data Storage

SRAM - Synchronous, ZBT

2.3V ~ 2.7V, 3V ~ 3.6V

-

-

-

-

-

-

-

100

-

-

-

-

-

-

-

-

-

9 Mbit

1

-

-

333 MHz

185 mA, 240 mA

4.5 ns

SRAM

Parallel

Flow-Through/Pipelined

512 k x 18

-

-

-

-

18 Bit

SRAM

9 Mbit

-

-

Industrial

-

-

-

-

-

-

SRAM

512K x 18

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

70 °C

0 °C

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

4

-

-

-

-

-

-

-

-

-

-

-

-

-

18 b

-

9 Mb

-

-

-

-

-

-

-

-

-

-

-

-

-

No

-

8 Weeks

-

-

BGA-119

YES

-

-

119

8 ns

-

GSI Technology

167 MHz

SDR

14

GSI TECHNOLOGY

Parallel

GSI Technology

GS8642Z18B-167I

167 MHz

125@Flow-Through/167@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

-

2.3, 3 V

- 40 C

Yes

3

Surface Mount

SMD/SMT

18 Bit

4 MWords

4000000

85 °C

-40 °C

-

PLASTIC/EPOXY

BGA

BGA, BGA119,7X17,50

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

Active

BGA

-

NOT SPECIFIED

5.17

Compliant

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

-

Industrial grade

-40 to 85 °C

Tray

GS8642Z18B

e0

No

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

-

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

-

119

R-PBGA-B119

Not Qualified

-

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

-

-

72 Mbit

2

-

SYNCHRONOUS

-

215 mA, 260 mA

8 ns

-

-

Flow-Through/Pipelined

4 M x 18

3-STATE

1.99 mm

18

-

22 Bit

SRAM

72 Mbit

0.12 A

75497472 bit

Industrial

PARALLEL

COMMON

-

-

ZBT SRAM

2.3 V

SRAM

-

22 mm

14 mm

No

-

8 Weeks

-

-

TQFP-100

YES

-

-

100

6.5 ns

-

GSI Technology

200 MHz

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS8320Z36AGT-200I

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

-

2.3, 3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

85 °C

-40 °C

-

PLASTIC/EPOXY

LQFP

LQFP, QFP100,.63X.87

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

-

NOT SPECIFIED

1.73

Details

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

-

Industrial grade

-40 to 100 °C

Tray

GS8320Z36AGT

-

-

3A991.B.2.B

NBT Pipeline/Flow Through

-

100 °C

-40 °C

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

-

Memory & Data Storage

CMOS

-

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

-

100

R-PQFP-G100

Not Qualified

-

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

-

-

36 Mbit

4

-

SYNCHRONOUS

-

225 mA, 260 mA

6.5 ns

-

-

Flow-Through/Pipelined

1 M x 36

3-STATE

1.6 mm

36

-

20 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

-

-

ZBT SRAM

2.3 V

SRAM

-

20 mm

14 mm

No

-

-

-

-

BGA-165

-

-

-

-

-

-

GSI Technology

-

SDR

36

-

Parallel

GSI Technology

-

300 MHz

-

2.7, 3.6 V

+ 85 C

SDR

-

2.3, 3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

512 kWords

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Compliant

-

FBGA

3.6 V

2.3 V

-

Synchronous

SyncBurst

2.5, 3.3 V

-

Industrial grade

-40 to 85 °C

Tray

GS88118CD

-

-

-

Pipeline/Flow Through

-

85 °C

-40 °C

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

165

-

-

-

-

-

-

-

-

-

9 Mbit

1

-

-

-

170 mA, 225 mA

5 ns

-

-

Flow-Through/Pipelined

512 k x 18

-

-

-

-

19 b

SRAM

9 Mbit

-

-

Industrial

-

-

-

-

-

-

SRAM

-

-

-

No

-

8 Weeks

-

Surface Mount

TQFP-100

YES

-

100-TQFP (20x14)

100

6.5 ns

GS8640Z

GSI Technology

-

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS8640Z18GT-250I

250 MHz

153.8@Flow-Through/250@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

GSI Technology Inc.

2.3, 3 V

- 40 C

Yes

3

Surface Mount

SMD/SMT

18 Bit

4 MWords

4000000

85 °C

-40 °C

Tray

PLASTIC/EPOXY

LQFP

LQFP,

-

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

Active

NOT SPECIFIED

4.89

Details

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

0.434810 oz

Industrial grade

-40 to 85 °C

Tray

GS8640Z18GT

e3

Yes

3A991.B.2.B

NBT Pipeline/Flow Through

PURE MATTE TIN

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

SRAM - Synchronous, ZBT

2.3V ~ 2.7V, 3V ~ 3.6V

QUAD

GULL WING

260

1

0.65 mm

compliant

-

100

R-PQFP-G100

Not Qualified

-

2.7 V

-

INDUSTRIAL

2.3 V

-

-

72 Mbit

2

-

SYNCHRONOUS

250 MHz

250 mA, 335 mA

6.5 ns

SRAM

Parallel

Flow-Through/Pipelined

4 M x 18

-

1.6 mm

18

-

22 Bit

SRAM

72 Mbit

-

75497472 bit

Industrial

PARALLEL

-

-

-

ZBT SRAM

-

SRAM

4M x 18

20 mm

14 mm

No

-

-

-

Surface Mount

BGA-165

-

-

165-FPBGA (13x15)

-

-

GS8662D

GSI Technology

-

QDR

15

-

Parallel

GSI Technology

-

550 MHz

550 MHz

1.9 V

+ 85 C

DDR

GSI Technology Inc.

1.7 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

4 MWords

-

-

-

Tray

-

-

-

-

-

-

-

-

Active

-

-

Compliant

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaQuad-II+

1.8000 V

-

Industrial grade

-40 to 100 °C

Tray

GS8662D20BGD

-

-

-

SigmaQuad-II+

-

100 °C

-40 °C

-

-

Memory & Data Storage

SRAM - Quad Port, Synchronous, QDR II+

1.7V ~ 1.9V

-

-

-

-

-

-

-

165

-

-

1.8 V

-

-

-

-

-

-

72 Mbit

2

-

-

550 MHz

990 mA

-

SRAM

Parallel

Pipelined

4 M x 18

-

-

-

-

20 Bit

SRAM

72 Mbit

-

-

Industrial

-

-

-

-

-

-

SRAM

4M x 18

-

-

No

-

10 Weeks

-

-

BGA-165

YES

-

-

165

6.5 ns

-

GSI Technology

-

-

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS816136DGD-200

200 MHz

-

-

+ 70 C

SDR

-

-

0 C

Yes

-

-

SMD/SMT

-

524288 words

512000

70 °C

-

-

PLASTIC/EPOXY

LBGA

LBGA,

-

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

-

NOT SPECIFIED

4.78

Details

Yes

-

3.6 V

2.3 V

2.5 V

-

SyncBurst

-

-

-

-

Tray

GS816136DGD

-

-

3A991.B.2.B

Pipeline/Flow Through

-

-

-

FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

-

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

-

165

R-PBGA-B165

-

-

2.7 V

-

COMMERCIAL

2.3 V

-

-

18 Mbit

-

-

SYNCHRONOUS

-

210 mA

6.5 ns

-

-

-

512 k x 36

-

1.4 mm

36

-

-

SRAM

-

-

18874368 bit

-

PARALLEL

-

-

-

CACHE SRAM

-

SRAM

-

15 mm

13 mm

-

-

8 Weeks

-

-

-

YES

-

-

119

6.5 ns

-

-

-

-

-

GSI TECHNOLOGY

-

GSI Technology

GS882Z18CGB-200

-

-

-

-

-

-

-

-

-

3

-

-

-

524288 words

512000

70 °C

-

-

PLASTIC/EPOXY

BGA

BGA,

-

RECTANGULAR

GRID ARRAY

Active

BGA

-

NOT SPECIFIED

4.57

-

Yes

-

-

-

2.5 V

-

-

-

-

-

-

-

-

e1

Yes

3A991.B.2.B

-

Tin/Silver/Copper (Sn/Ag/Cu)

-

-

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

-

CMOS

-

BOTTOM

BALL

260

1

1.27 mm

compliant

-

119

R-PBGA-B119

Not Qualified

-

2.7 V

-

COMMERCIAL

2.3 V

-

-

-

-

-

SYNCHRONOUS

-

-

-

-

-

-

512KX18

-

1.77 mm

18

-

-

-

-

-

9437184 bit

-

PARALLEL

-

-

-

ZBT SRAM

-

-

-

22 mm

14 mm

-

-

10 Weeks

-

-

TQFP-100

YES

-

-

100

7.5 ns

-

-

-

SDR

-

GSI TECHNOLOGY

Parallel

GSI Technology

GS8160Z36DGT-150

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2.7, 3.6 V

+ 85 C

-

-

2.3, 3 V

0 C

-

-

Surface Mount

SMD/SMT

36 Bit

512 kWords

512000

70 °C

-

-

PLASTIC/EPOXY

LQFP

LQFP,

-

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

-

NOT SPECIFIED

4.89

-

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

-

2.5, 3.3 V

-

Commercial grade

0 to 85 °C

-

-

-

-

3A991.B.2.B

-

-

-

-

PIPELINE ARCHITECTURE, FLOW-THROUGH, ALSO OPERATES AT 3.3V

8542.32.00.41

-

CMOS

-

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

-

100

R-PQFP-G100

Not Qualified

-

2.7 V

-

COMMERCIAL

2.3 V

-

-

18 Mbit

4

-

SYNCHRONOUS

-

180 mA, 190 mA

7.5 ns

-

-

Flow-Through/Pipelined

512 k x 36

-

1.6 mm

36

-

19 Bit

-

18 Mbit

-

18874368 bit

Commercial

PARALLEL

-

-

-

ZBT SRAM

-

-

-

20 mm

14 mm

-

-

-

-

-

TQFP-100

-

-

-

-

-

-

GSI Technology

-

-

18

-

Parallel

GSI Technology

-

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

-

1.7, 2.3 V

0 C

Yes

-

-

SMD/SMT

18 Bit

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Compliant

-

TQFP

3.6 V

2.3 V

-

Synchronous

SyncBurst

1.8, 2.5 V

0.469316 oz

-

0 to 85 °C

Bulk

GS816018DGT

-

-

-

Pipeline/Flow Through

-

85 °C

0 °C

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

100

-

-

-

-

-

-

-

-

-

18 Mbit

2

-

-

-

195 mA

6.5@Flow-Through/3@P

-

-

-

1 M x 18

-

-

-

-

21 b

SRAM

18 Mb

-

18

-

-

-

-

-

-

-

SRAM

-

-

-

No

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

70 °C

0 °C

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

1.8 V

-

-

-

-

-

-

-

2

-

-

-

-

-

-

-

-

-

-

-

-

-

21 b

-

36 Mb

-

-

-

-

-

-

-

-

-

-

-

-

-

No

-

-

Surface Mount

-

-

-

165

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

512000

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

70 °C

0 °C

-

-

-

-

-

-

-

-

-

-

-

133.3 MHz

-

-

-

-

-

-

-

-

3.6 V

2.3 V

-

4

190 mA

-

-

-

7.5 ns

-

-

-

-

-

-

-

-

19 b

-

18 Mb

-

-

-

-

-

Synchronous

36 b

-

-

-

-

-

-

No

-

8 Weeks

-

Surface Mount

100-LQFP

YES

-

100-TQFP (20x14)

100

-

GS8320Z

-

-

-

-

GSI TECHNOLOGY

Parallel

GSI Technology

GS8320Z18AGT-250I

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2.7, 3.6 V

+ 85 C

Volatile

GSI Technology Inc.

2.3, 3 V

- 40 C

-

-

-

SMD/SMT

18 Bit

2097152 words

2000000

-

-

Tray

PLASTIC/EPOXY

LQFP

LQFP,

-

RECTANGULAR

FLATPACK, LOW PROFILE

Active

-

Active

NOT SPECIFIED

4.85

-

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

-

2.5, 3.3 V

-

-

-40 to 85 °C

-

-

-

-

3A991.B.2.B

-

-

-

-

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

-

-

SRAM - Synchronous, ZBT

2.3V ~ 2.7V, 3V ~ 3.6V

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

-

100

R-PQFP-G100

-

-

2.7 V

-

-

2.3 V

-

-

36Mbit

-

-

SYNCHRONOUS

250 MHz

235 mA, 275 mA

5.5@Flow-Through/2.5

SRAM

Parallel

-

2 M x 18

-

1.6 mm

18

-

-

-

-

-

36

-

PARALLEL

-

-

-

ZBT SRAM

-

-

2M x 18

20 mm

14 mm

-