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Base Product Number

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Factory Pack QuantityFactory Pack Quantity

Ihs Manufacturer

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Memory Organization

Length

Width

Radiation Hardening

GS8342Q09BD-250
GS8342Q09BD-250

GSI Technology

In Stock

-

-

-

-

BGA-165

-

-

-

-

-

GSI Technology

-

QDR

15

-

Parallel

GSI Technology

-

250 MHz

250 MHz

1.9 V

+ 70 C

DDR

-

1.7 V

0 C

Yes

-

Surface Mount

SMD/SMT

9 Bit

4 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

N

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaQuad-II

1.8000 V

-

Commercial grade

0 to 85 °C

Tray

GS8342Q09BD

-

-

-

SigmaQuad-II

-

-

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

165

-

-

-

-

-

-

-

36 Mbit

2

-

-

665 mA

450 ps

-

-

Pipelined

4 M x 9

-

-

-

-

21 Bit

SRAM

36 Mbit

-

-

Commercial

-

-

-

-

SRAM

-

-

-

-

GS88118CGD-200I
GS88118CGD-200I

GSI Technology

In Stock

-

-

8 Weeks

-

BGA-165

YES

-

165

-

-

GSI Technology

-

SDR

72

GSI TECHNOLOGY

Parallel

GSI Technology

GS88118CGD-200I

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

-

2.3, 3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

512 kWords

512000

85 °C

-40 °C

-

PLASTIC/EPOXY

LBGA

LBGA,

-

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

-

NOT SPECIFIED

4.81

Details

Yes

FBGA

3.6 V

2.3 V

3.3 V

Synchronous

SyncBurst

2.5, 3.3 V

-

Industrial grade

-40 to 85 °C

Tray

GS88118CGD

-

-

3A991.B.2.B

Pipeline/Flow Through

-

-

-

ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY, FLOW THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

-

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

-

3.6 V

-

INDUSTRIAL

3 V

9 Mbit

1

SYNCHRONOUS

-

150 mA, 175 mA

6.5 ns

-

-

Flow-Through/Pipelined

512 k x 18

-

1.4 mm

18

-

19 Bit

SRAM

9 Mbit

-

9437184 bit

Industrial

SERIAL

-

CACHE SRAM

-

SRAM

-

15 mm

13 mm

-

GS8182Q36BGD-167I
GS8182Q36BGD-167I

GSI Technology

In Stock

-

-

8 Weeks

-

BGA-165

YES

-

165

0.5 ns

-

GSI Technology

-

DDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS8182Q36BGD-167I

167 MHz

167 MHz

1.9 V

+ 85 C

DDR

-

1.7 V

- 40 C

Yes

3

Surface Mount

SMD/SMT

36 Bit

512 kWords

512000

85 °C

-40 °C

-

PLASTIC/EPOXY

LBGA

LBGA,

-

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

-

NOT SPECIFIED

4.64

Details

Yes

FBGA

1.9 V

1.7 V

1.8 V

Synchronous

SigmaQuad-II

1.8000 V

-

Industrial grade

-40 to 85 °C

Tray

GS8182Q36BGD

e1

Yes

3A991.B.2.B

SigmaQuad-II

Tin/Silver/Copper (Sn/Ag/Cu)

-

-

PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

-

BOTTOM

BALL

260

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

-

1.9 V

-

INDUSTRIAL

1.7 V

18 Mbit

2

SYNCHRONOUS

-

495 mA

500 ps

-

-

Pipelined

512 k x 36

-

1.4 mm

36

-

18 Bit

SRAM

18 Mbit

-

18874368 bit

Industrial

PARALLEL

-

DDR SRAM

-

SRAM

-

15 mm

13 mm

-

GS8342QT37BGD-333
GS8342QT37BGD-333

GSI Technology

In Stock

-

-

10 Weeks

-

BGA-165

YES

-

165

0.45 ns

-

GSI Technology

333 MHz

QDR

15

GSI TECHNOLOGY

Parallel

GSI Technology

GS8342QT37BGD-333

333 MHz

333 MHz

1.9 V

+ 70 C

DDR

-

1.7 V

0 C

Yes

3

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

70 °C

-

-

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

-

NOT SPECIFIED

4.66

Details

Yes

FBGA

1.9 V

1.7 V

1.8 V

Synchronous

SigmaQuad-II+

1.8000 V

-

Commercial grade

0 to 85 °C

Tray

GS8342QT37BGD

e1

Yes

3A991.B.2.B

SigmaQuad-II+ B2

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

0 °C

PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

-

BOTTOM

BALL

260

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

1.8 V

1.9 V

1.5/1.8,1.8 V

COMMERCIAL

1.7 V

36 Mbit

2

SYNCHRONOUS

-

1.01 A

450 ps

-

-

Pipelined

1 M x 36

3-STATE

1.4 mm

36

-

19 Bit

SRAM

36 Mbit

-

37748736 bit

Commercial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

SRAM

-

15 mm

13 mm

No

GS8342Q09BD-250I
GS8342Q09BD-250I

GSI Technology

In Stock

-

-

10 Weeks

-

BGA-165

YES

-

165

0.45 ns

-

GSI Technology

250 MHz

QDR

15

GSI TECHNOLOGY

Parallel

GSI Technology

GS8342Q09BD-250I

250 MHz

250 MHz

-

+ 85 C

DDR

-

-

- 40 C

Yes

-

Surface Mount

SMD/SMT

9 Bit

4 MWords

4000000

85 °C

-40 °C

-

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

-

-

5.06

-

No

FBGA

1.9 V

1.7 V

1.8 V

Synchronous

SigmaQuad-II

1.8000 V

0.541455 oz

Industrial grade

-40 to 100 °C

Tray

GS8342Q09BD

-

-

3A991.B.2.B

SigmaQuad-II

-

-

-

PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

-

BOTTOM

BALL

-

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

-

1.9 V

1.5/1.8,1.8 V

INDUSTRIAL

1.7 V

36 Mbit

2

SYNCHRONOUS

-

675 mA

450 ps

-

-

Pipelined

4 M x 9

3-STATE

1.4 mm

9

-

21 Bit

SRAM

36 Mbit

0.215 A

37748736 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

SRAM

-

15 mm

13 mm

-

GS816018DGT-150
GS816018DGT-150

GSI Technology

In Stock

-

-

5 Weeks, 3 Days

-

TQFP-100

YES

-

100

7.5 ns

-

GSI Technology

-

SDR

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS816018DGT-150

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

-

2.3, 3 V

0 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

1 MWords

1000000

70 °C

-

-

PLASTIC/EPOXY

LQFP

LQFP,

-

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

-

NOT SPECIFIED

1.71

Details

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

-

Commercial grade

0 to 85 °C

Tray

GS816018DGT

-

-

3A991.B.2.B

Pipeline/Flow Through

-

-

-

FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

-

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

100

R-PQFP-G100

-

-

2.7 V

-

COMMERCIAL

2.3 V

18 Mbit

2

SYNCHRONOUS

-

170 mA, 180 mA

7.5 ns

-

-

Flow-Through/Pipelined

1 M x 18

-

1.6 mm

8

-

21 Bit

SRAM

18 Mbit

-

8388608 bit

Commercial

PARALLEL

-

CACHE SRAM

-

SRAM

-

20 mm

14 mm

-

GS8321Z36AD-150I
GS8321Z36AD-150I

GSI Technology

In Stock

-

-

8 Weeks

-

BGA-165

YES

-

165

-

-

GSI Technology

-

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS8321Z36AD-150I

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

-

2.3, 3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

-

-

-

PLASTIC/EPOXY

LBGA

LBGA,

-

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

-

NOT SPECIFIED

4.78

N

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

-

Industrial grade

-40 to 100 °C

Tray

GS8321Z36AD

e0

No

3A991.B.2.B

NBT

Tin/Lead (Sn/Pb)

-

-

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

-

Memory & Data Storage

CMOS

-

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

-

2.7 V

-

-

2.3 V

36 Mbit

4

SYNCHRONOUS

-

210 mA, 220 mA

7.5 ns

-

-

Flow-Through/Pipelined

1 M x 36

-

1.4 mm

36

-

20 Bit

SRAM

36 Mbit

-

37748736 bit

Industrial

PARALLEL

-

ZBT SRAM

-

SRAM

-

15 mm

13 mm

-

GS816032DGT-200IV
GS816032DGT-200IV

GSI Technology

In Stock

-

-

10 Weeks

-

TQFP-100

YES

-

100

6.5 ns

-

GSI Technology

-

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS816032DGT-200IV

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

-

1.7, 2.3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

32 Bit

512 kWords

512000

85 °C

-40 °C

-

PLASTIC/EPOXY

LQFP

LQFP,

-

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

-

NOT SPECIFIED

4.85

Details

Yes

TQFP

3.6 V

2.3 V

1.8 V

Synchronous

SyncBurst

1.8, 2.5 V

-

Industrial grade

-40 to 100 °C

Tray

GS816032DGT

-

-

3A991.B.2.B

Pipeline/Flow Through

-

100 °C

-40 °C

ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

-

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

100

R-PQFP-G100

-

-

2 V

-

INDUSTRIAL

1.7 V

18 Mbit

4

SYNCHRONOUS

-

230 mA

6.5 ns

-

-

Flow-Through/Pipelined

512 k x 32

-

1.6 mm

32

-

20 Bit

SRAM

18 Mbit

-

16777216 bit

Industrial

PARALLEL

-

CACHE SRAM

-

SRAM

-

20 mm

14 mm

No

GS8320Z18AGT-333I
GS8320Z18AGT-333I

GSI Technology

In Stock

-

-

-

Surface Mount

TQFP-100

-

100-TQFP (20x14)

-

-

GS8320Z

GSI Technology

-

SDR

18

-

Parallel

GSI Technology

-

333 MHz

333 MHz

2.7, 3.6 V

+ 85 C

SDR

GSI Technology Inc.

2.3, 3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

2 MWords

-

-

-

Tray

-

-

-

-

-

-

-

-

Active

-

-

Details

-

TQFP

3.6 V

2.3 V

-

Synchronous

NBT SRAM

2.5, 3.3 V

-

Industrial grade

-40 to 85 °C

Tray

GS8320Z18AGT

-

-

-

NBT Pipeline/Flow Through

-

-

-

-

-

Memory & Data Storage

SRAM - Synchronous, ZBT

2.3V ~ 2.7V, 3V ~ 3.6V

-

-

-

-

-

-

100

-

-

-

-

-

-

-

36 Mbit

2

-

333 MHz

255 mA, 340 mA

4.5 ns

SRAM

Parallel

Flow-Through/Pipelined

2 M x 18

-

-

-

-

21 Bit

SRAM

36 Mbit

-

-

Industrial

-

-

-

-

SRAM

2M x 18

-

-

-

GS832036AGT-250I
GS832036AGT-250I

GSI Technology

In Stock

-

-

7 Weeks, 5 Days

Surface Mount

TQFP-100

YES

100-TQFP (20x14)

100

5.5 ns

GS832036

GSI Technology

-

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS832036AGT-250I

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

GSI Technology Inc.

2.3, 3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

-

-

Tray

PLASTIC/EPOXY

LQFP

LQFP,

-

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

Active

NOT SPECIFIED

4.88

Details

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

0.460219 oz

Industrial grade

-40 to 100 °C

Tray

GS832036AGT

-

-

3A991.B.2.B

Pipeline/Flow Through

-

-

-

ALSO OPERATES AT 3.3; SYNCHRONOUS BURST

-

Memory & Data Storage

SRAM - Synchronous, Standard

2.3V ~ 2.7V, 3V ~ 3.6V

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

-

2.7 V

-

-

2.3 V

36 Mbit

4

SYNCHRONOUS

250 MHz

250 mA, 305 mA

5.5 ns

SRAM

Parallel

Flow-Through/Pipelined

1 M x 36

-

1.6 mm

36

-

20 Bit

SRAM

36 Mbit

-

37748736 bit

Industrial

PARALLEL

-

CACHE SRAM

-

SRAM

1M x 36

20 mm

14 mm

-

GS8322Z36AGB-333I
GS8322Z36AGB-333I

GSI Technology

In Stock

-

-

8 Weeks

Surface Mount

BGA-119

YES

119-FPBGA (22x14)

119

4.5 ns

GS8322Z

GSI Technology

333 MHz

SDR

14

GSI TECHNOLOGY

Parallel

GSI Technology

GS8322Z36AGB-333I

333 MHz

222.2@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

GSI Technology Inc.

2.3, 3 V

- 40 C

Yes

3

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

85 °C

-40 °C

Tray

PLASTIC/EPOXY

BGA

BGA, BGA119,7X17,50

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

Active

BGA

Active

NOT SPECIFIED

5.11

Details

Yes

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

-

Industrial grade

-40 to 100 °C

Tray

GS8322Z36AGB

e1

Yes

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

-

-

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

SRAM - Synchronous, ZBT

2.3V ~ 2.7V, 3V ~ 3.6V

BOTTOM

BALL

260

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

-

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

36 Mbit

4

SYNCHRONOUS

333 MHz

280 mA, 365 mA

4.5 ns

SRAM

Parallel

Flow-Through/Pipelined

1 M x 36

3-STATE

1.99 mm

36

-

20 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

2.3 V

SRAM

1M x 36

22 mm

14 mm

-

GS84036CGT-200I
GS84036CGT-200I

GSI Technology

In Stock

-

-

12 Weeks

-

TQFP-100

YES

-

100

6.5 ns

-

GSI Technology

-

SDR

72

GSI TECHNOLOGY

Parallel

GSI Technology

GS84036CGT-200I

200 MHz

200 MHz

2.7, 3.6 V

+ 85 C

SDR

-

2.3, 3 V

- 40 C

Yes

3

Surface Mount

SMD/SMT

36 Bit

128 kWords

128000

85 °C

-40 °C

-

PLASTIC/EPOXY

LQFP

LQFP,

-

RECTANGULAR

FLATPACK, LOW PROFILE

Active

-

-

NOT SPECIFIED

5.37

Non-Compliant

Yes

TQFP

3.6 V

2.3 V

3.3 V

Synchronous

SyncBurst

2.5, 3.3 V

0.304823 oz

Industrial grade

-40 to 100 °C

Tray

GS84036CGT

-

-

3A991.B.2.B

Pipeline/Flow Through

Pure Matte Tin (Sn)

-

-

FLOW-THROUGH OR PIPELINED ARCHITECTURE

-

Memory & Data Storage

CMOS

-

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

-

-

3.6 V

-

INDUSTRIAL

3 V

4 Mbit

4

SYNCHRONOUS

-

160 mA, 190 mA

6.5 ns

-

-

Flow-Through/Pipelined

128 k x 36

-

1.6 mm

36

-

17 Bit

SRAM

4 Mbit

-

4718592 bit

Industrial

PARALLEL

-

CACHE SRAM

-

SRAM

-

20 mm

14 mm

-

GS8662Q36BGD-300I
GS8662Q36BGD-300I

GSI Technology

In Stock

-

-

8 Weeks

-

BGA-165

YES

-

165

0.45 ns

-

-

300 MHz

QDR

-

GSI TECHNOLOGY

Parallel

GSI Technology

GS8662Q36BGD-300I

300 MHz

300 MHz

1.9 V

+ 85 C

-

-

1.7 V

- 40 C

-

3

Surface Mount

SMD/SMT

36 Bit

2 MWords

2000000

85 °C

-40 °C

-

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

-

NOT SPECIFIED

4.53

Compliant

Yes

FBGA

1.9 V

1.7 V

1.8 V

Synchronous

-

1.8000 V

-

Industrial grade

-40 to 100 °C

-

GS8662Q36BGD

e1

Yes

3A991.B.2.B

-

Tin/Silver/Copper (Sn/Ag/Cu)

100 °C

-40 °C

PIPELINED ARCHITECTURE

8542.32.00.41

SRAMs

CMOS

-

BOTTOM

BALL

260

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

1.8 V

1.9 V

1.5/1.8,1.8 V

INDUSTRIAL

1.7 V

72 Mbit

2

SYNCHRONOUS

-

1.07 A

450 ps

-

-

Pipelined

2 M x 36

3-STATE

1.4 mm

36

-

20 Bit

-

72 Mbit

-

75497472 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

-

-

15 mm

13 mm

No

GS8160Z18DGT-200I
GS8160Z18DGT-200I

GSI Technology

In Stock

-

-

10 Weeks

-

TQFP-100

YES

-

100

-

-

GSI Technology

-

SDR

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS8160Z18DGT-200I

200 MHz

-

2.7, 3.6 V

+ 100 C

SDR

-

2.3, 3 V

- 40 C

Yes

-

-

SMD/SMT

18 Bit

1 MWords

1000000

-

-

-

PLASTIC/EPOXY

LQFP

LQFP,

-

RECTANGULAR

FLATPACK, LOW PROFILE

Active

-

-

NOT SPECIFIED

1.68

Details

Yes

-

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

-

Industrial grade

-40 to 100 °C

Tray

GS8160Z18DGT

-

-

3A991.B.2.B

NBT Pipeline/Flow Through

-

100 °C

-40 °C

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

-

Memory & Data Storage

CMOS

-

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

-

R-PQFP-G100

-

-

2.7 V

-

-

2.3 V

18 Mbit

2

SYNCHRONOUS

-

215 mA

6.5 ns

-

-

Flow-Through/Pipelined

1 M x 18

-

1.6 mm

18

-

20 b

SRAM

18 Mbit

-

18874368 bit

Industrial

PARALLEL

-

ZBT SRAM

-

SRAM

-

20 mm

14 mm

No

GS8322Z36AD-200
GS8322Z36AD-200

GSI Technology

In Stock

-

-

8 Weeks, 5 Days

-

BGA-165

YES

-

165

6.5 ns

-

GSI Technology

200 MHz

SDR

14

GSI TECHNOLOGY

Parallel

GSI Technology

GS8322Z36AD-200

200 MHz

-

2.7, 3.6 V

+ 70 C

SDR

-

2.3, 3 V

0 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

70 °C

-

-

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

-

NOT SPECIFIED

4.74

N

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

-

Commercial grade

0 to 85 °C

Tray

GS8322Z36AD

e0

No

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

85 °C

0 °C

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

-

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

-

2.7 V

2.5/3.3 V

COMMERCIAL

2.3 V

36 Mbit

4

SYNCHRONOUS

-

205 mA, 240 mA

6.5 ns

-

-

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

-

20 b

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

2.3 V

SRAM

-

15 mm

13 mm

No

GS8322Z36AD-150I
GS8322Z36AD-150I

GSI Technology

In Stock

-

-

8 Weeks

-

BGA-165

YES

-

165

7.5 ns

-

GSI Technology

150 MHz

SDR

14

GSI TECHNOLOGY

Parallel

GSI Technology

GS8322Z36AD-150I

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

-

2.3, 3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

85 °C

-40 °C

-

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

-

NOT SPECIFIED

1.59

Compliant

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

0.203046 oz

Industrial grade

-40 to 100 °C

Bulk

GS8322Z36AD

e0

No

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

100 °C

-40 °C

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

-

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

-

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

36 Mbit

4

SYNCHRONOUS

-

210 mA, 220 mA

7.5 ns

-

-

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

-

20 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

2.3 V

SRAM

-

15 mm

13 mm

No

GS8320Z18AGT-250I
GS8320Z18AGT-250I

GSI Technology

In Stock

-

-

8 Weeks

Surface Mount

100-LQFP

YES

100-TQFP (20x14)

100

-

GS8320Z

-

-

-

-

GSI TECHNOLOGY

Parallel

GSI Technology

GS8320Z18AGT-250I

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2.7, 3.6 V

+ 85 C

Volatile

GSI Technology Inc.

2.3, 3 V

- 40 C

-

-

-

SMD/SMT

18 Bit

2097152 words

2000000

-

-

Tray

PLASTIC/EPOXY

LQFP

LQFP,

-

RECTANGULAR

FLATPACK, LOW PROFILE

Active

-

Active

NOT SPECIFIED

4.85

-

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

-

2.5, 3.3 V

-

-

-40 to 85 °C

-

-

-

-

3A991.B.2.B

-

-

-

-

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

-

-

SRAM - Synchronous, ZBT

2.3V ~ 2.7V, 3V ~ 3.6V

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

100

R-PQFP-G100

-

-

2.7 V

-

-

2.3 V

36Mbit

-

SYNCHRONOUS

250 MHz

235 mA, 275 mA

5.5@Flow-Through/2.5

SRAM

Parallel

-

2 M x 18

-

1.6 mm

18

-

-

-

-

-

36

-

PARALLEL

-

ZBT SRAM

-

-

2M x 18

20 mm

14 mm

-

GS832032AGT-250
GS832032AGT-250

GSI Technology

In Stock

-

-

8 Weeks

-

TQFP-100

YES

-

100

5.5 ns

-

GSI Technology

-

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS832032AGT-250

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

-

2.3, 3 V

0 C

Yes

-

Surface Mount

SMD/SMT

32 Bit

1 MWords

1000000

85 °C

-

-

PLASTIC/EPOXY

LQFP

LQFP,

-

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

-

NOT SPECIFIED

1.72

Compliant

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

-

Commercial grade

0 to 85 °C

Bulk

GS832032AGT

-

-

3A991.B.2.B

Pipeline/Flow Through

-

85 °C

0 °C

ALSO OPERATES AT 3.3; SYNCHRONOUS BURST

-

Memory & Data Storage

CMOS

-

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

-

2.7 V

-

OTHER

2.3 V

36 Mbit

4

SYNCHRONOUS

-

230 mA, 285 mA

5.5 ns

-

-

Flow-Through/Pipelined

1 M x 32

-

1.6 mm

32

-

20 Bit

SRAM

36 Mbit

-

33554432 bit

Commercial

PARALLEL

-

CACHE SRAM

-

SRAM

-

20 mm

14 mm

No

GS8342D18BGD-400I
GS8342D18BGD-400I

GSI Technology

In Stock

-

-

-

Surface Mount

BGA-165

-

165-FPBGA (13x15)

-

-

GS8342D

GSI Technology

-

QDR

15

-

Parallel

GSI Technology

-

400 MHz

400 MHz

1.9 V

+ 85 C

DDR

GSI Technology Inc.

1.7 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

2 MWords

-

-

-

Tray

-

-

-

-

-

-

-

-

Active

-

-

Details

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaQuad-II

1.8000 V

-

Industrial grade

-40 to 100 °C

Tray

GS8342D18BGD

-

-

-

SigmaQuad-II

-

-

-

-

-

Memory & Data Storage

SRAM - Quad Port, Synchronous, QDR II

1.7V ~ 1.9V

-

-

-

-

-

-

165

-

-

-

-

-

-

-

36 Mbit

2

-

400 MHz

715 mA

-

SRAM

Parallel

Pipelined

2 M x 18

-

-

-

-

19 Bit

SRAM

36 Mbit

-

-

Industrial

-

-

-

-

SRAM

2M x 18

-

-

-

GS832036AGT-333IV
GS832036AGT-333IV

GSI Technology

In Stock

-

-

8 Weeks

Surface Mount

TQFP-100

YES

100-TQFP (20x14)

100

5 ns

GS832036

GSI Technology

-

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS832036AGT-333IV

333 MHz

200@Flow-Through/333@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

GSI Technology Inc.

1.7, 2.3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

-

-

Tray

PLASTIC/EPOXY

LQFP

LQFP,

-

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

Active

NOT SPECIFIED

5.66

Details

Yes

TQFP

2.7 V

1.7 V

1.8 V

Synchronous

SyncBurst

1.8, 2.5 V

-

Industrial grade

-40 to 100 °C

Tray

GS832036AGT

-

-

3A991.B.2.B

Synchronous Burst

-

-

-

ALSO OPERTAES AT 2.5, SYNCHRONOUS BURST

-

Memory & Data Storage

SRAM - Synchronous, Standard

1.7V ~ 2V, 2.3V ~ 2.7V

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

-

2 V

-

-

1.7 V

36 Mbit

4

SYNCHRONOUS

333 MHz

290 mA, 375 mA

5 ns

SRAM

Parallel

Flow-Through/Pipelined

1 M x 36

-

1.6 mm

36

-

20 Bit

SRAM

36 Mbit

-

37748736 bit

Industrial

PARALLEL

-

CACHE SRAM

-

SRAM

1M x 36

20 mm

14 mm

-