-

-

Surface Mount

BGA-165

-

165-FPBGA (13x15)

-

-

GS8342T

GSI Technology

-

DDR

15

-

Parallel

GSI Technology

-

400 MHz

400 MHz

1.9 V

+ 85 C

DDR

GSI Technology Inc.

1.7 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

2 MWords

-

-

-

Tray

-

-

-

-

-

-

-

-

Active

-

-

Details

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaCIO DDR-II

1.8000 V

-

Industrial grade

-40 to 100 °C

Tray

GS8342T18BGD

-

-

-

SigmaDDR-II B2

-

-

-

-

-

Memory & Data Storage

SRAM - Quad Port, Synchronous, DDR II

1.7V ~ 1.9V

-

-

-

-

-

-

165

-

-

-

-

-

-

-

36 Mbit

1

-

400 MHz

610 mA

-

SRAM

Parallel

Pipelined

2 M x 18

-

-

-

-

21 Bit

SRAM

36 Mbit

-

-

Industrial

-

-

-

-

SRAM

2M x 18

-

-

-

-

10 Weeks

Surface Mount

TQFP-100

YES

100-TQFP (20x14)

100

5.5 ns

GS816018

GSI Technology

-

-

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS816018DGT-250I

250 MHz

-

-

+ 100 C

SDR

GSI Technology Inc.

-

- 40 C

Yes

-

-

SMD/SMT

-

1048576 words

1000000

85 °C

-40 °C

Tray

PLASTIC/EPOXY

LQFP

LQFP,

-

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

Active

NOT SPECIFIED

4.84

Details

Yes

-

3.6 V

2.3 V

2.5 V

-

SyncBurst

-

-

-

-40°C ~ 100°C (TJ)

Tray

GS816018DGT

-

-

3A991.B.2.B

Pipeline/Flow Through

-

-

-

FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

SRAM - Synchronous, Standard

2.3V ~ 2.7V, 3V ~ 3.6V

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

100

R-PQFP-G100

-

-

2.7 V

-

INDUSTRIAL

2.3 V

18 Mbit

-

SYNCHRONOUS

250 MHz

230 mA, 250 mA

5.5 ns

SRAM

Parallel

-

1 M x 18

-

1.6 mm

8

-

-

SRAM

-

-

8388608 bit

-

PARALLEL

-

CACHE SRAM

-

SRAM

1M x 18

20 mm

14 mm

-

-

-

Surface Mount

TQFP-100

-

100-TQFP (20x14)

-

-

GS8160Z36

GSI Technology

-

SDR

36

-

Parallel

GSI Technology

-

333 MHz

222.2@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 100 C

SDR

GSI Technology Inc.

2.3, 3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

512 kWords

-

-

-

Tray

-

-

-

-

-

-

-

-

Active

-

-

Compliant

-

TQFP

3.6 V

2.3 V

-

Synchronous

NBT SRAM

2.5, 3.3 V

-

Industrial grade

-40 to 100 °C

Bulk

GS8160Z36DGT

-

-

-

NBT Pipeline/Flow Through

-

100 °C

-40 °C

-

-

Memory & Data Storage

SRAM - Synchronous, ZBT

2.3V ~ 2.7V, 3V ~ 3.6V

-

-

-

-

-

-

100

-

-

-

-

-

-

-

18 Mbit

4

-

333 MHz

280 mA, 335 mA

4.5 ns

SRAM

Parallel

Flow-Through/Pipelined

512 k x 36

-

-

-

-

19 Bit

SRAM

18 Mbit

-

-

Industrial

-

-

-

-

SRAM

512K x 36

-

-

No

-

10 Weeks, 2 Days

-

BGA-165

YES

-

165

7.5 ns

-

GSI Technology

150 MHz

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS832132AGD-150I

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

-

2.3, 3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

32 Bit

1 MWords

1000000

85 °C

-40 °C

-

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

-

NOT SPECIFIED

1.48

Details

Yes

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

-

Industrial grade

-40 to 100 °C

Tray

GS832132AGD

-

-

3A991.B.2.B

Pipeline/Flow Through

-

-

-

PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

-

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

-

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

36 Mbit

4

SYNCHRONOUS

-

210 mA, 220 mA

7.5 ns

-

-

Flow-Through/Pipelined

1 M x 32

3-STATE

1.4 mm

32

-

20 Bit

SRAM

36 Mbit

0.04 A

33554432 bit

Industrial

PARALLEL

COMMON

CACHE SRAM

2.3 V

SRAM

-

15 mm

13 mm

-

-

10 Weeks

-

BGA-165

YES

-

165

0.45 ns

-

GSI Technology

333 MHz

QDR

15

GSI TECHNOLOGY

Parallel

GSI Technology

GS8342Q36BGD-333I

333 MHz

333 MHz

1.9 V

+ 85 C

DDR

-

1.7 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

85 °C

-40 °C

-

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

-

NOT SPECIFIED

4.91

Details

Yes

FBGA

1.9 V

1.7 V

1.8 V

Synchronous

SigmaQuad-II

1.8000 V

-

Industrial grade

-40 to 100 °C

Tray

GS8342Q36BGD

-

-

3A991.B.2.B

SigmaQuad-II

-

-

-

PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

-

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

-

1.9 V

1.5/1.8,1.8 V

INDUSTRIAL

1.7 V

36 Mbit

2

SYNCHRONOUS

-

1.065 A

450 ps

-

-

Pipelined

1 M x 36

3-STATE

1.4 mm

36

-

19 Bit

SRAM

36 Mbit

0.245 A

37748736 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

SRAM

-

15 mm

13 mm

-

-

8 Weeks

-

BGA-165

YES

-

165

6.5 ns

-

GSI Technology

200 MHz

SDR

14

GSI TECHNOLOGY

Parallel

GSI Technology

GS8322Z18AD-200I

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

-

2.3, 3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

2 MWords

2000000

85 °C

-40 °C

-

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

-

NOT SPECIFIED

4.77

-

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

0.594778 oz

Industrial grade

-40 to 100 °C

Tray

GS8322Z18AD

e0

No

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

-

-

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

-

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

-

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

36 Mbit

2

SYNCHRONOUS

-

205 mA, 240 mA

6.5 ns

-

-

Flow-Through/Pipelined

2 M x 18

3-STATE

1.4 mm

18

-

21 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

2.3 V

SRAM

-

15 mm

13 mm

-

-

8 Weeks

-

BGA-165

YES

-

165

0.5 ns

-

GSI Technology

-

-

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS8182R36BGD-167

167 MHz

-

-

+ 70 C

DDR

-

-

0 C

Yes

3

-

SMD/SMT

-

524288 words

512000

70 °C

-

-

PLASTIC/EPOXY

LBGA

LBGA,

-

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

-

NOT SPECIFIED

4.67

Details

Yes

-

1.9 V

1.7 V

1.8 V

-

SigmaDDR-II

-

0.224777 oz

-

-

Tray

GS8182R36BGD

e1

Yes

3A991.B.2.B

SigmaDDR-II B4

Tin/Silver/Copper (Sn/Ag/Cu)

-

-

PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

-

BOTTOM

BALL

260

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

-

1.9 V

-

COMMERCIAL

1.7 V

18 Mbit

-

SYNCHRONOUS

-

330 mA

500 ps

-

-

-

512 k x 36

-

1.4 mm

36

-

-

SRAM

-

-

18874368 bit

-

PARALLEL

-

DDR SRAM

-

SRAM

-

15 mm

13 mm

-

-

8 Weeks

-

-

YES

-

165

5.5 ns

-

-

-

SDR

-

GSI TECHNOLOGY

-

GSI Technology

GS8321Z18AD-250I

-

181.8@Flow-Through/250@Pipelined MHz

2.7, 3.6 V

-

-

-

2.3, 3 V

-

-

-

Surface Mount

-

18 Bit

2 MWords

2000000

-

-

-

PLASTIC/EPOXY

LBGA

LBGA,

-

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

-

NOT SPECIFIED

5.3

-

No

FBGA

-

-

2.5 V

Synchronous

-

2.5, 3.3 V

-

Industrial grade

-40 to 100 °C

-

-

e0

No

3A991.B.2.B

-

Tin/Lead (Sn/Pb)

-

-

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

-

CMOS

-

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

-

2.7 V

-

-

2.3 V

-

2

SYNCHRONOUS

-

-

-

-

-

Flow-Through/Pipelined

2MX18

-

1.4 mm

18

-

21 Bit

-

36 Mbit

-

37748736 bit

Industrial

PARALLEL

-

ZBT SRAM

-

-

-

15 mm

13 mm

-

-

8 Weeks

-

TQFP-100

YES

-

100

6.5 ns

-

GSI Technology

-

SDR

72

GSI TECHNOLOGY

Parallel

GSI Technology

GS880Z36CGT-200

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

-

2.3, 3 V

0 C

Yes

3

Surface Mount

SMD/SMT

36 Bit

256 kWords

256000

70 °C

-

-

PLASTIC/EPOXY

LQFP

LQFP,

-

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

-

NOT SPECIFIED

4.2

Details

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

-

Commercial grade

0 to 70 °C

Tray

GS880Z36CGT

e3

Yes

3A991.B.2.B

NBT

Matte Tin (Sn)

-

-

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

-

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

-

2.7 V

-

COMMERCIAL

2.3 V

9 Mbit

1

SYNCHRONOUS

-

140 mA, 170 mA

6.5 ns

-

-

Flow-Through/Pipelined

256 k x 36

-

1.6 mm

36

-

18 Bit

SRAM

9 Mbit

-

9437184 bit

Commercial

PARALLEL

-

ZBT SRAM

-

SRAM

-

20 mm

14 mm

-

-

8 Weeks

-

BGA-165

YES

-

165

7.5 ns

-

GSI Technology

150 MHz

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS8321E36AD-150I

150 MHz

-

2.7, 3.6 V

+ 85 C

SDR

-

2.3, 3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

85 °C

-40 °C

-

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

-

NOT SPECIFIED

5.31

-

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

-

Industrial grade

-40 to 100 °C

Tray

GS8321E36AD

e0

No

3A991.B.2.B

DCD Pipeline/Flow Through

TIN LEAD

-

-

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

-

Memory & Data Storage

CMOS

-

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

-

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

36 Mbit

4

SYNCHRONOUS

-

210 mA, 220 mA

7.5 ns

-

-

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

-

-

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

CACHE SRAM

2.3 V

SRAM

-

15 mm

13 mm

-

-

8 Weeks

-

-

YES

-

100

6.5 ns

-

-

-

SDR

-

GSI TECHNOLOGY

-

GSI Technology

GS832018AGT-200V

-

153.8@Flow-Through/200@Pipelined MHz

2, 2.7 V

-

-

-

1.7, 2.3 V

-

-

-

Surface Mount

-

18 Bit

2 MWords

2000000

85 °C

-

-

PLASTIC/EPOXY

LQFP

LQFP,

-

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

-

NOT SPECIFIED

5.06

Compliant

Yes

TQFP

-

-

1.8 V

Synchronous

-

1.8, 2.5 V

-

Commercial grade

0 to 85 °C

Bulk

-

-

-

3A991.B.2.B

-

-

85 °C

0 °C

ALSO OPERTAES AT 2.5, SYNCHRONOUS BURST

-

-

CMOS

-

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

-

2 V

-

OTHER

1.7 V

-

2

SYNCHRONOUS

-

-

-

-

-

Flow-Through/Pipelined

2MX18

-

1.6 mm

18

-

21 Bit

-

36 Mbit

-

37748736 bit

Commercial

PARALLEL

-

CACHE SRAM

-

-

-

20 mm

14 mm

No

-

-

-

BGA-165

-

-

-

-

-

GSI Technology

-

SDR

18

-

Parallel

GSI Technology

-

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

-

1.7, 2.3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

512 kWords

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Compliant

-

FBGA

2.7 V

1.7 V

-

Synchronous

SyncBurst

1.8, 2.5 V

-

Industrial grade

-40 to 100 °C

Bulk

GS816236DGD

-

-

-

Pipeline/Flow Through

-

100 °C

-40 °C

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

165

-

-

-

-

-

-

-

18 Mbit

4

-

-

245 mA, 265 mA

5.5 ns

-

-

Flow-Through/Pipelined

512 k x 36

-

-

-

-

19 Bit

SRAM

18 Mbit

-

-

Industrial

-

-

-

-

SRAM

-

-

-

No

-

-

-

TQFP-100

-

-

-

-

-

-

-

SDR

-

-

Parallel

-

-

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2, 2.7 V

+ 70 C

-

-

1.7, 2.3 V

0 C

-

-

Surface Mount

SMD/SMT

18 Bit

2 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Compliant

-

TQFP

2.7 V

1.7 V

-

Synchronous

-

1.8, 2.5 V

-

Commercial grade

0 to 85 °C

Bulk

GS8320Z18AGT

-

-

-

-

-

85 °C

0 °C

-

-

-

-

-

-

-

-

-

-

-

100

-

-

-

-

-

-

-

36 Mbit

2

-

-

185 mA, 200 mA

7.5 ns

-

-

Flow-Through/Pipelined

2 M x 18

-

-

-

-

21 Bit

-

36 Mbit

-

-

Commercial

-

-

-

-

-

-

-

-

No

-

8 Weeks

-

-

YES

-

165

-

-

-

-

SDR

-

GSI TECHNOLOGY

-

GSI Technology

GS8321Z18AD-200I

-

153.8@Flow-Through/200@Pipelined MHz

2.7, 3.6 V

-

-

-

2.3, 3 V

-

-

-

Surface Mount

-

18 Bit

2 MWords

2000000

-

-

-

PLASTIC/EPOXY

LBGA

LBGA,

-

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

-

NOT SPECIFIED

5.3

-

No

FBGA

-

-

2.5 V

Synchronous

-

2.5, 3.3 V

-

Industrial grade

-40 to 100 °C

-

-

e0

No

3A991.B.2.B

-

Tin/Lead (Sn/Pb)

-

-

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

-

-

CMOS

-

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

-

2.7 V

-

-

2.3 V

-

2

SYNCHRONOUS

-

-

-

-

-

Flow-Through/Pipelined

2MX18

-

1.4 mm

18

-

21 Bit

-

36 Mbit

-

37748736 bit

Industrial

PARALLEL

-

ZBT SRAM

-

-

-

15 mm

13 mm

-

-

10 Weeks

-

BGA-165

YES

-

165

5.5 ns

-

GSI Technology

-

SDR

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS8161Z36DD-250I

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

-

2.3, 3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

512 kWords

512000

85 °C

-40 °C

-

PLASTIC/EPOXY

LBGA

LBGA,

-

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

-

NOT SPECIFIED

1.81

Compliant

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

-

Industrial grade

-40 to 85 °C

Bulk

GS8161Z36DD

-

-

3A991.B.2.B

NBT

-

85 °C

-40 °C

FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

-

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

-

-

2.7 V

-

INDUSTRIAL

2.3 V

18 Mbit

4

SYNCHRONOUS

-

250 mA, 270 mA

5.5 ns

-

-

Flow-Through/Pipelined

512 k x 36

-

1.4 mm

36

-

19 Bit

SRAM

18 Mbit

-

18874368 bit

Industrial

PARALLEL

-

ZBT SRAM

-

SRAM

-

15 mm

13 mm

No

-

10 Weeks

-

TQFP-100

YES

-

100

7.5 ns

-

GSI Technology

-

SDR

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS816018DGT-150I

150 MHz

-

2.7, 3.6 V

+ 100 C

SDR

-

2.3, 3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

1 MWords

1000000

85 °C

-40 °C

-

PLASTIC/EPOXY

LQFP

LQFP,

-

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

-

NOT SPECIFIED

5.32

Details

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

-

Industrial grade

-40 to 100 °C

Tray

GS816018DGT

-

-

3A991.B.2.B

Pipeline/Flow Through

-

100 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

-

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

100

R-PQFP-G100

-

-

2.7 V

-

INDUSTRIAL

2.3 V

18 Mbit

2

SYNCHRONOUS

-

190 mA, 200 mA

7.5 ns

-

-

Flow-Through/Pipelined

1 M x 18

-

1.6 mm

8

-

21 b

SRAM

18 Mbit

-

8388608 bit

Industrial

PARALLEL

-

CACHE SRAM

-

SRAM

-

20 mm

14 mm

No

-

10 Weeks

-

TQFP-100

YES

-

100

5.5 ns

-

GSI Technology

-

-

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS816018DGT-250

250 MHz

-

-

+ 85 C

SDR

-

-

0 C

Yes

-

-

SMD/SMT

-

1048576 words

1000000

70 °C

-

-

PLASTIC/EPOXY

LQFP

LQFP,

-

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

-

NOT SPECIFIED

4.84

Details

Yes

-

3.6 V

2.3 V

2.5 V

-

SyncBurst

-

-

-

-

Tray

GS816018DGT

-

-

3A991.B.2.B

Pipeline/Flow Through

-

85 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

-

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

100

R-PQFP-G100

-

-

2.7 V

-

COMMERCIAL

2.3 V

18 Mbit

2

SYNCHRONOUS

-

210 mA, 230 mA

5.5 ns

-

-

-

1 M x 18

-

1.6 mm

8

-

21 b

SRAM

18 Mb

-

8388608 bit

-

PARALLEL

-

CACHE SRAM

-

SRAM

-

20 mm

14 mm

No

-

8 Weeks

-

BGA-165

YES

-

165

5.5 ns

-

-

250 MHz

SDR

-

GSI TECHNOLOGY

Parallel

GSI Technology

GS8322Z36AD-250IV

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2, 2.7 V

+ 85 C

-

-

1.7, 2.3 V

- 40 C

-

-

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

85 °C

-40 °C

-

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

-

-

4.74

Compliant

No

FBGA

2.7 V

1.7 V

1.8 V

Synchronous

-

1.8, 2.5 V

-

Industrial grade

-40 to 100 °C

Bulk

-

-

-

3A991.B.2.B

-

-

100 °C

-40 °C

ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE

8542.32.00.41

SRAMs

CMOS

-

BOTTOM

BALL

-

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

-

2 V

1.8/2.5 V

INDUSTRIAL

1.7 V

36 Mbit

4

SYNCHRONOUS

-

260 mA, 315 mA

5.5 ns

-

-

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

-

20 Bit

-

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

1.7 V

-

-

15 mm

13 mm

No

-

8 Weeks

-

BGA-119

YES

-

119

6.5 ns

-

GSI Technology

200 MHz

SDR

14

GSI TECHNOLOGY

Parallel

GSI Technology

GS8322Z36AB-200I

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

-

2.3, 3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

85 °C

-40 °C

-

PLASTIC/EPOXY

BGA

BGA, BGA119,7X17,50

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

Active

BGA

-

NOT SPECIFIED

1.62

Compliant

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

0.130773 oz

Industrial grade

-40 to 100 °C

Bulk

GS8322Z36AB

e0

No

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

100 °C

-40 °C

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

-

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

-

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

36 Mbit

4

SYNCHRONOUS

-

225 mA, 260 mA

6.5 ns

-

-

Flow-Through/Pipelined

1 M x 36

3-STATE

1.99 mm

36

-

20 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

2.3 V

SRAM

-

22 mm

14 mm

No

-

-

-

BGA-165

-

-

-

-

-

GSI Technology

-

-

18

-

Parallel

GSI Technology

-

250 MHz

-

-

+ 70 C

DDR

-

-

0 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

-

1.9 V

1.7 V

-

-

SigmaDDR-II

-

-

-

-

Tray

GS8182T18BGD

-

-

-

SigmaDDR-II B2

-

70 °C

0 °C

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

1.8 V

-

-

-

-

18 Mbit

1

-

-

350 mA

450 ps

-

-

-

1 M x 18

-

-

-

-

20 b

SRAM

18 Mb

-

-

-

-

-

-

-

SRAM

-

-

-

No