- Organization
- Memory Size
- Mounting Styles
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- Supply Voltage-Max
- Supply Voltage-Min
- Interface Type
- Maximum Operating Temperature
- Minimum Operating Temperature
- Supply Current-Max
- Maximum Clock Frequency
- Manufacturer
Attribute column
Manufacturer
GSI Memory
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Factory Lead Time | Mounting Type | Package / Case | Surface Mount | Supplier Device Package | Number of Terminals | Access Time-Max | Base Product Number | Brand | Clock Frequency-Max (fCLK) | Data Rate Architecture | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Maximum Clock Frequency | Maximum Clock Rate | Maximum Operating Supply Voltage | Maximum Operating Temperature | Memory Types | Mfr | Minimum Operating Supply Voltage | Minimum Operating Temperature | Moisture Sensitive | Moisture Sensitivity Levels | Mounting | Mounting Styles | Number of I/O Lines | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Timing Type | Tradename | Typical Operating Supply Voltage | Unit Weight | Usage Level | Operating Temperature | Packaging | Series | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Memory Size | Number of Ports | Operating Mode | Clock Frequency | Supply Current-Max | Access Time | Memory Format | Memory Interface | Architecture | Organization | Output Characteristics | Seated Height-Max | Memory Width | Write Cycle Time - Word, Page | Address Bus Width | Product Type | Density | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Product Category | Memory Organization | Length | Width | Radiation Hardening |
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 GS8342DT20BGD-500 GSI Technology | In Stock | - | - | 10 Weeks | - | BGA-165 | YES | - | 165 | 0.45 ns | - | GSI Technology | 500 MHz | QDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8342DT20BGD-500 | 500 MHz | 500 MHz | 1.9 V | + 70 C | DDR | - | 1.7 V | 0 C | Yes | 3 | Surface Mount | SMD/SMT | 18 Bit | 2 MWords | 2000000 | 85 °C | - | - | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | - | NOT SPECIFIED | 1.78 | Details | Yes | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaQuad-II+ | 1.8000 V | - | Commercial grade | 0 to 85 °C | Tray | GS8342DT20BGD | e1 | Yes | 3A991.B.2.B | SigmaQuad-II+ | Tin/Silver/Copper (Sn/Ag/Cu) | 85 °C | 0 °C | - | - | Memory & Data Storage | CMOS | - | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.8 V | 1.9 V | 1.5/1.8,1.8 V | OTHER | 1.7 V | 36 Mbit | 2 | SYNCHRONOUS | - | 855 mA | 450 ps | - | - | Pipelined | 2 M x 18 | 3-STATE | 1.4 mm | 18 | - | 19 Bit | SRAM | 36 Mbit | - | 37748736 bit | Commercial | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | SRAM | - | 15 mm | 13 mm | No | ||
GS882Z36CGD-333I GSI Technology | In Stock | - | - | 8 Weeks | Surface Mount | BGA-165 | YES | 165-FPBGA (13x15) | 165 | 4.5 ns | GS882Z36 | GSI Technology | - | SDR | 36 | GSI TECHNOLOGY | Parallel | GSI Technology | GS882Z36CGD-333I | 333 MHz | 222.2@Flow-Through/333@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | GSI Technology Inc. | 2.3, 3 V | - 40 C | Yes | 3 | Surface Mount | SMD/SMT | 36 Bit | 256 kWords | 256000 | 85 °C | -40 °C | Tray | PLASTIC/EPOXY | LBGA | LBGA, | - | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | Active | NOT SPECIFIED | 5.14 | Compliant | Yes | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | NBT SRAM | 2.5, 3.3 V | - | Industrial grade | -40 to 85 °C | Tray | GS882Z36CGD | e1 | Yes | 3A991.B.2.B | NBT Pipeline/Flow Through | Tin/Silver/Copper (Sn/Ag/Cu) | 85 °C | -40 °C | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | 8542.32.00.41 | Memory & Data Storage | SRAM - Synchronous, ZBT | 2.3V ~ 2.7V, 3V ~ 3.6V | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | - | 2.7 V | - | INDUSTRIAL | 2.3 V | 9 Mbit | 4 | SYNCHRONOUS | 333 MHz | 200 mA, 260 mA | 4.5 ns | SRAM | Parallel | Flow-Through/Pipelined | 256 k x 36 | - | 1.4 mm | 36 | - | 18 Bit | SRAM | 9 Mbit | - | 9437184 bit | Industrial | PARALLEL | - | ZBT SRAM | - | SRAM | 256K x 36 | 15 mm | 13 mm | No | ||
GS8640Z18GT-300I GSI Technology | In Stock | - | - | 8 Weeks | Surface Mount | TQFP-100 | YES | 100-TQFP (20x14) | 100 | 5.5 ns | GS8640Z | GSI Technology | - | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8640Z18GT-300I | 300 MHz | 181.8@Flow-Through/300@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | GSI Technology Inc. | 2.3, 3 V | - 40 C | Yes | 3 | Surface Mount | SMD/SMT | 18 Bit | 4 MWords | 4000000 | 85 °C | -40 °C | Tray | PLASTIC/EPOXY | LQFP | LQFP, | - | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | Active | NOT SPECIFIED | 5.33 | Details | Yes | TQFP | 3.6 V | 2.3 V | 2.5 V | Synchronous | NBT SRAM | 2.5, 3.3 V | - | Industrial grade | -40 to 85 °C | Tray | GS8640Z18GT | e3 | Yes | 3A991.B.2.B | NBT Pipeline/Flow Through | PURE MATTE TIN | - | - | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | 8542.32.00.41 | Memory & Data Storage | SRAM - Synchronous, ZBT | 2.3V ~ 2.7V, 3V ~ 3.6V | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | - | 2.7 V | - | INDUSTRIAL | 2.3 V | 72 Mbit | 2 | SYNCHRONOUS | 300 MHz | 290 mA, 390 mA | 5.5 ns | SRAM | Parallel | Flow-Through/Pipelined | 4 M x 18 | - | 1.6 mm | 18 | - | 22 Bit | SRAM | 72 Mbit | - | 75497472 bit | Industrial | PARALLEL | - | ZBT SRAM | - | SRAM | 4M x 18 | 20 mm | 14 mm | - | ||
GS8662T36BGD-400I GSI Technology | In Stock | - | - | - | Surface Mount | BGA-165 | - | 165-FPBGA (13x15) | - | - | GS8662T | GSI Technology | - | DDR | 15 | - | Parallel | GSI Technology | - | 400 MHz | 400 MHz | 1.9 V | + 85 C | DDR | GSI Technology Inc. | 1.7 V | - 40 C | Yes | - | Surface Mount | SMD/SMT | 36 Bit | 2 MWords | - | - | - | Tray | - | - | - | - | - | - | - | - | Active | - | - | Details | - | FBGA | 1.9 V | 1.7 V | - | Synchronous | SigmaDDR-II | 1.8000 V | - | Industrial grade | -40 to 100 °C | Tray | GS8662T36BGD | - | - | - | SigmaDDR-II B2 | - | - | - | - | - | Memory & Data Storage | SRAM - Quad Port, Synchronous, DDR II | 1.7V ~ 1.9V | - | - | - | - | - | - | 165 | - | - | - | - | - | - | - | 72 Mbit | 1 | - | 400 MHz | 810 mA | - | SRAM | Parallel | Pipelined | 2 M x 36 | - | - | - | - | 21 Bit | SRAM | 72 Mbit | - | - | Industrial | - | - | - | - | SRAM | 2M x 36 | - | - | - | ||
GS8161Z36DD-200I GSI Technology | In Stock | - | - | 10 Weeks | - | BGA-165 | YES | - | 165 | 6.5 ns | - | GSI Technology | - | SDR | 36 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8161Z36DD-200I | 200 MHz | 153.8@Flow-Through/200@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | - | 2.3, 3 V | - 40 C | Yes | - | Surface Mount | SMD/SMT | 36 Bit | 512 kWords | 512000 | 85 °C | -40 °C | - | PLASTIC/EPOXY | LBGA | LBGA, | - | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | - | NOT SPECIFIED | 1.83 | Compliant | No | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | NBT SRAM | 2.5, 3.3 V | - | Industrial grade | -40 to 85 °C | Bulk | GS8161Z36DD | - | - | 3A991.B.2.B | NBT | - | 85 °C | -40 °C | FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V | 8542.32.00.41 | Memory & Data Storage | CMOS | - | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | - | - | 2.7 V | - | INDUSTRIAL | 2.3 V | 18 Mbit | 4 | SYNCHRONOUS | - | 230 mA | 6.5 ns | - | - | Flow-Through/Pipelined | 512 k x 36 | - | 1.4 mm | 36 | - | 19 Bit | SRAM | 18 Mbit | - | 18874368 bit | Industrial | PARALLEL | - | ZBT SRAM | - | SRAM | - | 15 mm | 13 mm | No | ||
GS816032DGT-150IV GSI Technology | In Stock | - | - | 10 Weeks | - | TQFP-100 | YES | - | 100 | 7.5 ns | - | GSI Technology | - | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS816032DGT-150IV | 150 MHz | 133.3@Flow-Through/150@Pipelined MHz | 2, 2.7 V | + 85 C | SDR | - | 1.7, 2.3 V | - 40 C | Yes | - | Surface Mount | SMD/SMT | 32 Bit | 512 kWords | 512000 | 85 °C | -40 °C | - | PLASTIC/EPOXY | LQFP | LQFP, | - | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | - | NOT SPECIFIED | 4.85 | Details | Yes | TQFP | 3.6 V | 2.3 V | 1.8 V | Synchronous | SyncBurst | 1.8, 2.5 V | - | Industrial grade | -40 to 100 °C | Tray | GS816032DGT | - | - | 3A991.B.2.B | Pipeline/Flow Through | - | - | - | ALSO OPERATES AT 2.5V | 8542.32.00.41 | Memory & Data Storage | CMOS | - | QUAD | GULL WING | NOT SPECIFIED | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | - | - | 2 V | - | INDUSTRIAL | 1.7 V | 18 Mbit | 4 | SYNCHRONOUS | - | 200 mA, 210 mA | 7.5 ns | - | - | Flow-Through/Pipelined | 512 k x 32 | - | 1.6 mm | 32 | - | 20 Bit | SRAM | 18 Mbit | - | 16777216 bit | Industrial | PARALLEL | - | CACHE SRAM | - | SRAM | - | 20 mm | 14 mm | - | ||
GS8160Z36DGT-200V GSI Technology | In Stock | - | - | 10 Weeks | - | TQFP-100 | YES | - | 100 | 6.5 ns | - | GSI Technology | - | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8160Z36DGT-200V | 200 MHz | 153.8@Flow-Through/200@Pipelined MHz | 2, 2.7 V | + 85 C | SDR | - | 1.7, 2.3 V | 0 C | Yes | - | Surface Mount | SMD/SMT | 36 Bit | 512 kWords | 512000 | 70 °C | - | - | PLASTIC/EPOXY | LQFP | LQFP, | - | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | - | NOT SPECIFIED | 5.49 | Details | Yes | TQFP | 2.7 V | 1.7 V | 1.8 V | Synchronous | NBT SRAM | 1.8, 2.5 V | - | Commercial grade | 0 to 85 °C | Tray | GS8160Z36DGT | - | - | 3A991.B.2.B | NBT | - | - | - | ALSO OPERATES AT 2.5V | 8542.32.00.41 | Memory & Data Storage | CMOS | - | QUAD | GULL WING | NOT SPECIFIED | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | - | - | 2 V | - | COMMERCIAL | 1.7 V | 18 Mbit | 4 | SYNCHRONOUS | - | 205 mA, 210 mA | 6.5 ns | - | - | Flow-Through/Pipelined | 512 k x 36 | - | 1.6 mm | 36 | - | 19 Bit | SRAM | 18 Mbit | - | 18874368 bit | Commercial | PARALLEL | - | ZBT SRAM | - | SRAM | - | 20 mm | 14 mm | - | ||
GS8182T18BD-300I GSI Technology | In Stock | - | - | 8 Weeks | - | BGA-165 | YES | - | 165 | 0.45 ns | - | GSI Technology | - | - | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8182T18BD-300I | 300 MHz | - | - | + 85 C | DDR | - | - | - 40 C | Yes | - | - | SMD/SMT | - | 1048576 words | 1000000 | 85 °C | -40 °C | - | PLASTIC/EPOXY | LBGA | LBGA, | - | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | - | NOT SPECIFIED | 4.81 | - | No | - | 1.9 V | 1.7 V | 1.8 V | - | SigmaDDR-II | - | - | - | - | Tray | GS8182T18BD | e0 | No | 3A991.B.2.B | SigmaDDR-II B2 | Tin/Lead (Sn/Pb) | - | - | PIPELINED ARCHITECTURE, LATE WRITE | 8542.32.00.41 | Memory & Data Storage | CMOS | - | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | not_compliant | 165 | R-PBGA-B165 | Not Qualified | - | 1.9 V | - | INDUSTRIAL | 1.7 V | 18 Mbit | - | SYNCHRONOUS | - | 415 mA | 450 ps | - | - | - | 1 M x 18 | - | 1.4 mm | 18 | - | - | SRAM | - | - | 18874368 bit | - | PARALLEL | - | DDR SRAM | - | SRAM | - | 15 mm | 13 mm | - | ||
GS8644Z36GE-200 GSI Technology | In Stock | - | - | 8 Weeks | - | BGA-165 | YES | - | 165 | 6.5 ns | - | GSI Technology | 200 MHz | SDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8644Z36GE-200 | 200 MHz | 153.8@Flow-Through/200@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | - | 2.3, 3 V | 0 C | Yes | 3 | Surface Mount | SMD/SMT | 36 Bit | 2 MWords | 2000000 | 70 °C | - | - | PLASTIC/EPOXY | BGA | BGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY | Active | BGA | - | NOT SPECIFIED | 4.61 | Details | Yes | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | NBT SRAM | 2.5, 3.3 V | 0.324873 oz | Commercial grade | 0 to 70 °C | Tray | GS8644Z36GE | e1 | Yes | 3A991.B.2.B | NBT | Tin/Silver/Copper (Sn/Ag/Cu) | - | - | ALSO OPERATES AT 3.3V SUPPLY; PIPELINED OR FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | - | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | - | 2.7 V | 2.5/3.3 V | COMMERCIAL | 2.3 V | 72 Mbit | 4 | SYNCHRONOUS | - | 270 mA, 345 mA | 6.5 ns | - | - | Flow-Through/Pipelined | 2 M x 36 | 3-STATE | 1.5 mm | 36 | - | 21 Bit | SRAM | 72 Mbit | 0.12 A | 75497472 bit | Commercial | PARALLEL | COMMON | ZBT SRAM | 2.3 V | SRAM | - | 17 mm | 15 mm | - | ||
GS832218AGB-150 GSI Technology | In Stock | - | - | 8 Weeks | - | BGA-119 | YES | - | 119 | 7.5 ns | - | GSI Technology | 150 MHz | SDR | 14 | GSI TECHNOLOGY | Parallel | GSI Technology | GS832218AGB-150 | 150 MHz | 133@Flow-Through/150@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | - | 2.3, 3 V | 0 C | Yes | 3 | Surface Mount | SMD/SMT | 18 Bit | 2 MWords | 2000000 | 70 °C | - | - | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | - | NOT SPECIFIED | 4.56 | Details | Yes | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | SyncBurst | 2.5, 3.3 V | - | Commercial grade | 0 to 85 °C | Tray | GS832218AGB | e1 | Yes | 3A991.B.2.B | Pipeline/Flow Through | Tin/Silver/Copper (Sn/Ag/Cu) | - | - | ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | 8542.32.00.41 | Memory & Data Storage | CMOS | - | BOTTOM | BALL | 260 | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | - | 2.7 V | 2.5/3.3 V | COMMERCIAL | 2.3 V | 36 Mbit | 2 | SYNCHRONOUS | - | 175 mA, 190 mA | 7.5 ns | - | - | Flow-Through/Pipelined | 2 M x 18 | 3-STATE | 1.99 mm | 18 | - | 21 Bit | SRAM | 36 Mbit | 0.03 A | 37748736 bit | Commercial | PARALLEL | COMMON | CACHE SRAM | 2.3 V | SRAM | - | 22 mm | 14 mm | - | ||
GS8644Z18GE-200V GSI Technology | In Stock | - | - | - | - | BGA-165 | - | - | - | - | - | GSI Technology | - | SDR | 15 | - | Parallel | GSI Technology | - | 200 MHz | 153.8@Flow-Through/200@Pipelined MHz | 2, 2.7 V | + 70 C | SDR | - | 1.7, 2.3 V | 0 C | Yes | - | Surface Mount | SMD/SMT | 18 Bit | 4 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Compliant | - | FBGA | 2.7 V | 1.7 V | - | Synchronous | NBT SRAM | 1.8, 2.5 V | 0.324873 oz | Commercial grade | 0 to 70 °C | Tray | GS8644Z18GE | - | - | - | NBT | - | 70 °C | 0 °C | - | - | Memory & Data Storage | - | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | - | 72 Mbit | 2 | - | - | 250 mA, 315 mA | 6.5 ns | - | - | Flow-Through/Pipelined | 4 M x 18 | - | - | - | - | 21 Bit | SRAM | 72 Mbit | - | - | Commercial | - | - | - | - | SRAM | - | - | - | No | ||
GS832032AGT-200V GSI Technology | In Stock | - | - | 8 Weeks | - | TQFP-100 | YES | - | 100 | 6.5 ns | - | GSI Technology | - | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS832032AGT-200V | 200 MHz | 153.8@Flow-Through/200@Pipelined MHz | 2, 2.7 V | + 70 C | SDR | - | 1.7, 2.3 V | 0 C | Yes | - | Surface Mount | SMD/SMT | 32 Bit | 1 MWords | 1000000 | 85 °C | - | - | PLASTIC/EPOXY | LQFP | LQFP, | - | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | - | NOT SPECIFIED | 4.87 | Details | Yes | TQFP | 2.7 V | 1.7 V | 1.8 V | Synchronous | SyncBurst | 1.8, 2.5 V | - | Commercial grade | 0 to 85 °C | Tray | GS832032AGT | - | - | 3A991.B.2.B | Synchronous Burst | - | - | - | ALSO OPERTAES AT 2.5, SYNCHRONOUS BURST | - | Memory & Data Storage | CMOS | - | QUAD | GULL WING | NOT SPECIFIED | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | - | 2 V | - | OTHER | 1.7 V | 36 Mbit | 4 | SYNCHRONOUS | - | 215 mA, 250 mA | 6.5 ns | - | - | Flow-Through/Pipelined | 1 M x 32 | - | 1.6 mm | 32 | - | 20 Bit | SRAM | 36 Mbit | - | 33554432 bit | Commercial | PARALLEL | - | CACHE SRAM | - | SRAM | - | 20 mm | 14 mm | - | ||
GS8161Z18DGT-150 GSI Technology | In Stock | - | - | 10 Weeks | - | TQFP-100 | YES | - | 100 | 7.5 ns | - | GSI Technology | - | SDR | 36 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8161Z18DGT-150 | 150 MHz | 133.3@Flow-Through/150@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | - | 2.3, 3 V | 0 C | Yes | - | Surface Mount | SMD/SMT | 18 Bit | 1 MWords | 1000000 | 70 °C | - | - | PLASTIC/EPOXY | LQFP | LQFP, | - | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | - | NOT SPECIFIED | 4.79 | Details | Yes | TQFP | 3.6 V | 2.3 V | 2.5 V | Synchronous | NBT SRAM | 2.5, 3.3 V | 0.550045 oz | Commercial grade | 0 to 70 °C | Tray | GS8161Z18DGT | - | - | 3A991.B.2.B | NBT | - | - | - | ALSO OPERATES AT 3.3V | 8542.32.00.41 | Memory & Data Storage | CMOS | - | QUAD | GULL WING | NOT SPECIFIED | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | - | - | 2.7 V | - | COMMERCIAL | 2.3 V | 18 Mbit | 2 | SYNCHRONOUS | - | 170 mA, 180 mA | 7.5 ns | - | - | Flow-Through/Pipelined | 1 M x 18 | - | 1.6 mm | 18 | - | 20 Bit | SRAM | 18 Mbit | - | 18874368 bit | Commercial | PARALLEL | - | ZBT SRAM | - | SRAM | - | 20 mm | 14 mm | - | ||
GS8642Z36GB-200V GSI Technology | In Stock | - | - | - | - | BGA-119 | - | - | - | - | - | GSI Technology | - | SDR | 14 | - | Parallel | GSI Technology | - | 200 MHz | - | 2, 2.7 V | + 70 C | SDR | - | 1.7, 2.3 V | 0 C | Yes | - | Surface Mount | SMD/SMT | 36 Bit | 2 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Details | - | FBGA | 2.7 V | 1.7 V | - | Synchronous | NBT SRAM | 1.8, 2.5 V | - | Commercial grade | 0 to 70 °C | Tray | GS8642Z36GB | - | - | - | NBT Pipeline/Flow Through | - | - | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | - | 119 | - | - | - | - | - | - | - | 72 Mbit | 4 | - | - | 230 mA, 310 mA | 7.5 ns | - | - | Flow-Through/Pipelined | 2 M x 36 | - | - | - | - | - | SRAM | 72 Mbit | - | - | Commercial | - | - | - | - | SRAM | - | - | - | - | ||
GS880Z32CGT-200I GSI Technology | In Stock | - | - | - | - | TQFP-100 | - | - | - | - | - | GSI Technology | - | - | 72 | - | Parallel | GSI Technology | - | 200 MHz | - | - | + 85 C | SDR | - | - | - 40 C | Yes | - | - | SMD/SMT | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Details | - | - | 3.6 V | 2.3 V | - | - | NBT SRAM | - | - | - | - | - | GS880Z32CGT | - | - | - | NBT | - | - | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 9 Mbit | - | - | - | 160 mA, 190 mA | 6.5 ns | - | - | - | 256 k x 32 | - | - | - | - | - | SRAM | - | - | - | - | - | - | - | - | SRAM | - | - | - | - | ||
GS880Z18CGT-250I GSI Technology | In Stock | - | - | 8 Weeks | - | TQFP-100 | YES | - | 100 | 5.5 ns | - | GSI Technology | - | - | 72 | GSI TECHNOLOGY | Parallel | GSI Technology | GS880Z18CGT-250I | 250 MHz | - | - | + 85 C | SDR | - | - | - 40 C | Yes | 3 | - | SMD/SMT | - | 524288 words | 512000 | 85 °C | -40 °C | - | PLASTIC/EPOXY | LQFP | LQFP, | - | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | - | NOT SPECIFIED | 5.36 | Details | Yes | - | 3.6 V | 2.3 V | 2.5 V | - | NBT SRAM | - | - | - | - | Tray | GS880Z18CGT | e3 | Yes | 3A991.B.2.B | NBT | Matte Tin (Sn) | - | - | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | - | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | - | 2.7 V | - | INDUSTRIAL | 2.3 V | 9 Mbit | - | SYNCHRONOUS | - | 165 mA, 200 mA | 5.5 ns | - | - | - | 512 k x 18 | - | 1.6 mm | 18 | - | - | SRAM | - | - | 9437184 bit | - | PARALLEL | - | ZBT SRAM | - | SRAM | - | 20 mm | 14 mm | - | ||
GS816032DGT-250 GSI Technology | In Stock | - | - | 10 Weeks | - | TQFP-100 | YES | - | 100 | 5.5 ns | - | GSI Technology | - | - | 36 | GSI TECHNOLOGY | Parallel | GSI Technology | GS816032DGT-250 | 250 MHz | - | - | + 70 C | SDR | - | - | 0 C | Yes | - | - | SMD/SMT | - | 524288 words | 512000 | 70 °C | - | - | PLASTIC/EPOXY | LQFP | LQFP, | - | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | - | NOT SPECIFIED | 4.85 | Details | Yes | - | 3.6 V | 2.3 V | 2.5 V | - | SyncBurst | - | - | - | - | Tray | GS816032DGT | - | - | 3A991.B.2.B | Pipeline/Flow Through | - | - | - | FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V | 8542.32.00.41 | Memory & Data Storage | CMOS | - | QUAD | GULL WING | NOT SPECIFIED | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | - | - | 2.7 V | - | COMMERCIAL | 2.3 V | 18 Mbit | - | SYNCHRONOUS | - | 230 mA, 250 mA | 5.5 ns | - | - | - | 512 k x 32 | - | 1.6 mm | 32 | - | - | SRAM | - | - | 16777216 bit | - | PARALLEL | - | CACHE SRAM | - | SRAM | - | 20 mm | 14 mm | - | ||
GS832118AGD-333I GSI Technology | In Stock | - | - | 8 Weeks | Surface Mount | BGA-165 | YES | 165-FPBGA (13x15) | 165 | 4.5 ns | GS832118 | GSI Technology | 333 MHz | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS832118AGD-333I | 333 MHz | 222.2@Flow-Through/333@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | GSI Technology Inc. | 2.3, 3 V | - 40 C | Yes | - | Surface Mount | SMD/SMT | 18 Bit | 2 MWords | 1000000 | 85 °C | -40 °C | Tray | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | Active | NOT SPECIFIED | 5.15 | Details | Yes | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | SyncBurst | 2.5, 3.3 V | - | Industrial grade | -40 to 100 °C | Tray | GS832118AGD | - | - | 3A991.B.2.B | Pipeline/Flow Through | - | - | - | PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY | 8542.32.00.41 | Memory & Data Storage | SRAM - Synchronous, Standard | 2.3V ~ 2.7V, 3V ~ 3.6V | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | - | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | 36 Mbit | 2 | SYNCHRONOUS | 333 MHz | 255 mA, 340 mA | 4.5 ns | SRAM | Parallel | Flow-Through/Pipelined | 2 M x 18 | 3-STATE | 1.4 mm | 18 | - | 21 Bit | SRAM | 36 Mbit | 0.04 A | 18874368 bit | Industrial | PARALLEL | COMMON | CACHE SRAM | 2.3 V | SRAM | 2M x 18 | 15 mm | 13 mm | - | ||
GS8322Z36AGD-333I GSI Technology | In Stock | - | - | 8 Weeks | Surface Mount | BGA-165 | YES | 165-FPBGA (13x15) | 165 | 4.5 ns | GS8322Z | GSI Technology | 333 MHz | SDR | 14 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8322Z36AGD-333I | 333 MHz | 222.2@Flow-Through/333@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | GSI Technology Inc. | 2.3, 3 V | - 40 C | Yes | 3 | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 85 °C | -40 °C | Tray | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | Active | NOT SPECIFIED | 5.12 | Details | Yes | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | NBT SRAM | 2.5, 3.3 V | - | Industrial grade | -40 to 100 °C | Tray | GS8322Z36AGD | e1 | Yes | 3A991.B.2.B | NBT Pipeline/Flow Through | Tin/Silver/Copper (Sn/Ag/Cu) | - | - | ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | 8542.32.00.41 | Memory & Data Storage | SRAM - Synchronous, ZBT | 2.3V ~ 2.7V, 3V ~ 3.6V | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | - | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | 36 Mbit | 4 | SYNCHRONOUS | 333 MHz | 280 mA, 365 mA | 4.5 ns | SRAM | Parallel | Flow-Through/Pipelined | 1 M x 36 | 3-STATE | 1.4 mm | 36 | - | 20 Bit | SRAM | 36 Mbit | 0.04 A | 37748736 bit | Industrial | PARALLEL | COMMON | ZBT SRAM | 2.3 V | SRAM | 1M x 36 | 15 mm | 13 mm | - | ||
GS881Z36CGT-150I GSI Technology | In Stock | - | - | - | - | TQFP-100 | - | - | - | - | - | GSI Technology | - | - | 72 | - | Parallel | GSI Technology | - | 150 MHz | - | - | + 85 C | SDR | - | - | - 40 C | Yes | - | - | SMD/SMT | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Details | - | - | 3.6 V | 2.3 V | - | - | NBT SRAM | - | - | - | - | Tray | GS881Z36CGT | - | - | - | NBT Pipeline/Flow Through | - | - | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 9 Mbit | - | - | - | 150 mA, 160 mA | 7.5 ns | - | - | - | 256 k x 36 | - | - | - | - | - | SRAM | - | - | - | - | - | - | - | - | SRAM | - | - | - | - |