-

8 Weeks

-

TQFP-100

YES

-

-

100

7.5 ns

-

GSI Technology

150 MHz

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS8320Z18AGT-150

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

-

2.3, 3 V

0 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

2 MWords

2000000

85 °C

-

-

PLASTIC/EPOXY

LQFP

LQFP, QFP100,.63X.87

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

-

NOT SPECIFIED

4.85

Details

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

0.255518 oz

Commercial grade

0 to 85 °C

Tray

GS8320Z18AGT

-

-

3A991.B.2.B

NBT Pipeline/Flow Through

-

-

-

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

-

Memory & Data Storage

CMOS

-

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

-

2.7 V

2.5/3.3 V

OTHER

2.3 V

36 Mbit

2

SYNCHRONOUS

-

175 mA, 190 mA

7.5 ns

-

-

Flow-Through/Pipelined

-

2 M x 18

3-STATE

1.6 mm

18

-

21 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

-

Commercial

PARALLEL

COMMON

ZBT SRAM

2.3 V

-

-

SRAM

-

20 mm

14 mm

-

-

-

-

BGA-165

-

-

-

-

-

-

GSI Technology

-

SDR

72

-

Parallel

GSI Technology

-

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

-

2.3, 3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

256 kWords

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

3.6 V

2.3 V

-

Synchronous

SyncBurst

2.5, 3.3 V

-

Industrial grade

-40 to 85 °C

Tray

GS88136CGD

-

-

-

Pipeline/Flow Through

-

-

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

165

-

-

-

-

-

-

-

9 Mbit

1

-

-

160 mA, 190 mA

6.5 ns

-

-

Flow-Through/Pipelined

-

256 k x 36

-

-

-

-

17 Bit

SRAM

9 Mbit

-

-

-

Industrial

-

-

-

-

-

-

SRAM

-

-

-

-

-

8 Weeks

-

BGA-165

YES

-

-

165

5.5 ns

-

GSI Technology

-

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS832136AGD-250IV

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

-

1.7, 2.3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

-

-

-

PLASTIC/EPOXY

LBGA

LBGA,

-

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

-

NOT SPECIFIED

4.6

Details

Yes

FBGA

2.7 V

1.7 V

1.8 V

Synchronous

SyncBurst

1.8, 2.5 V

-

Industrial grade

-40 to 100 °C

Tray

GS832136AGD

-

-

3A991.B.2.B

Synchronous Burst

-

-

-

PIPELINE OR FLOW THROUGH ARCHITECTURE; ALSO OPERATES AT 2.5 SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

-

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

-

2 V

-

-

1.7 V

36 Mbit

4

SYNCHRONOUS

-

260 mA, 315 mA

5.5 ns

-

-

Flow-Through/Pipelined

-

1 M x 36

-

1.4 mm

36

-

20 Bit

SRAM

36 Mbit

-

37748736 bit

-

Industrial

PARALLEL

-

CACHE SRAM

-

-

-

SRAM

-

15 mm

13 mm

-

-

-

-

BGA-165

-

-

-

-

-

-

GSI Technology

-

SDR

36

-

Parallel

GSI Technology

-

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

-

2.3, 3 V

0 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

1 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

N

-

FBGA

3.6 V

2.3 V

-

Synchronous

SyncBurst

2.5, 3.3 V

-

Commercial grade

0 to 85 °C

Tray

GS816218DD

-

-

-

Pipeline/Flow Through

-

-

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

165

-

-

-

-

-

-

-

18 Mbit

2

-

-

195 mA, 195 mA

6.5 ns

-

-

Flow-Through/Pipelined

-

1 M x 18

-

-

-

-

20 Bit

SRAM

18 Mbit

-

-

-

Commercial

-

-

-

-

-

-

SRAM

-

-

-

-

-

8 Weeks

-

-

YES

-

-

165

7.5 ns

-

-

-

SDR

-

GSI TECHNOLOGY

-

GSI Technology

GS882Z18CD-150I

-

133.3@Flow-Through/150@Pipelined MHz

2.7, 3.6 V

-

-

-

2.3, 3 V

-

-

-

Surface Mount

-

18 Bit

512 kWords

512000

85 °C

-40 °C

-

PLASTIC/EPOXY

LBGA

LBGA,

-

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

-

NOT SPECIFIED

4.74

-

No

FBGA

-

-

2.5 V

Synchronous

-

2.5, 3.3 V

-

Industrial grade

-40 to 85 °C

-

-

e0

No

3A991.B.2.B

-

Tin/Lead (Sn/Pb)

-

-

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

-

CMOS

-

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

-

2.7 V

-

INDUSTRIAL

2.3 V

-

2

SYNCHRONOUS

-

-

-

-

-

Flow-Through/Pipelined

-

512KX18

-

1.4 mm

18

-

18 Bit

-

9 Mbit

-

9437184 bit

-

Industrial

PARALLEL

-

ZBT SRAM

-

-

-

-

-

15 mm

13 mm

-

-

10 Weeks

-

TQFP-100

YES

-

-

100

6.5 ns

-

GSI Technology

-

-

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS816032DGT-200

200 MHz

-

-

+ 70 C

SDR

-

-

0 C

Yes

-

-

SMD/SMT

-

524288 words

512000

70 °C

-

-

PLASTIC/EPOXY

LQFP

LQFP,

-

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

-

NOT SPECIFIED

4.85

Details

Yes

-

3.6 V

2.3 V

2.5 V

-

SyncBurst

-

-

-

-

Tray

GS816032DGT

-

-

3A991.B.2.B

Pipeline/Flow Through

-

-

-

FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

-

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

100

R-PQFP-G100

-

-

2.7 V

-

COMMERCIAL

2.3 V

18 Mbit

-

SYNCHRONOUS

-

210 mA

6.5 ns

-

-

-

-

512 k x 32

-

1.6 mm

32

-

-

SRAM

-

-

16777216 bit

-

-

PARALLEL

-

CACHE SRAM

-

-

-

SRAM

-

20 mm

14 mm

-

-

8 Weeks

-

TQFP-100

YES

-

-

100

-

-

GSI Technology

-

-

72

GSI TECHNOLOGY

Parallel

GSI Technology

GS88136CGT-200

200 MHz

-

-

+ 70 C

SDR

-

-

0 C

Yes

-

-

SMD/SMT

-

262144 words

256000

70 °C

-

-

UNSPECIFIED

LQFP

LQFP,

-

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

-

NOT SPECIFIED

4.79

Details

Yes

-

3.6 V

2.3 V

3.3 V

-

SyncBurst

-

-

-

-

Tray

GS88136CGT

-

-

3A991.B.2.B

Pipeline/Flow Through

-

-

-

ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY, FLOW THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

-

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

100

R-XQFP-G100

Not Qualified

-

3.6 V

-

COMMERCIAL

3 V

9 Mbit

-

SYNCHRONOUS

-

140 mA, 170 mA

6.5 ns

-

-

-

-

256 k x 36

-

1.6 mm

36

-

-

SRAM

-

-

9437184 bit

-

-

SERIAL

-

CACHE SRAM

-

-

-

SRAM

-

20 mm

14 mm

-

-

12 Weeks

-

TQFP-100

YES

-

-

100

7 ns

-

GSI Technology

-

-

72

GSI TECHNOLOGY

Parallel

GSI Technology

GS84036CGT-166I

166 MHz

-

-

+ 85 C

SDR

-

-

- 40 C

Yes

3

-

SMD/SMT

-

131072 words

128000

85 °C

-40 °C

-

PLASTIC/EPOXY

LQFP

LQFP,

-

RECTANGULAR

FLATPACK, LOW PROFILE

Active

-

-

NOT SPECIFIED

1.7

Details

Yes

-

3.6 V

2.3 V

3.3 V

-

SyncBurst

-

0.262103 oz

-

-40 to 85 °C

Tray

GS84036CGT

-

-

3A991.B.2.B

Pipeline/Flow Through

Pure Matte Tin (Sn)

-

-

FLOW-THROUGH OR PIPELINED ARCHITECTURE

-

Memory & Data Storage

CMOS

-

QUAD

GULL WING

260

1

0.65 mm

compliant

-

R-PQFP-G100

-

-

3.6 V

-

INDUSTRIAL

3 V

4 Mbit

-

SYNCHRONOUS

-

155 mA, 250 mA

7 ns

-

-

-

-

128 k x 36

-

1.6 mm

36

-

-

SRAM

-

-

4718592 bit

-

-

PARALLEL

-

CACHE SRAM

-

-

-

SRAM

-

20 mm

14 mm

-

-

-

Surface Mount

BGA-165

-

-

165-FPBGA (13x15)

-

-

GS8342D

GSI Technology

-

QDR

15

-

Parallel

GSI Technology

-

400 MHz

400 MHz

1.9 V

+ 85 C

DDR

GSI Technology Inc.

1.7 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

1 MWords

-

-

-

Tray

-

-

-

-

-

-

-

-

Active

-

-

Details

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaQuad-II

1.8000 V

-

Industrial grade

-40 to 100 °C

Tray

GS8342D36BGD

-

-

-

SigmaQuad-II

-

-

-

-

-

Memory & Data Storage

SRAM - Quad Port, Synchronous, QDR II

1.7V ~ 1.9V

-

-

-

-

-

-

165

-

-

-

-

-

-

-

36 Mbit

2

-

400 MHz

915 mA

-

SRAM

Parallel

Pipelined

-

1 M x 36

-

-

-

-

18 Bit

SRAM

36 Mbit

-

-

-

Industrial

-

-

-

-

-

-

SRAM

1M x 36

-

-

-

-

12 Weeks

Surface Mount

260-BGA

YES

-

260-BGA (22x14)

260

-

GS81313LQ18

-

-

-

-

GSI TECHNOLOGY

Parallel

GSI Technology

GS81313LQ18GK-800I

800 MHz

-

1.35 V

+ 100 C

Volatile

GSI Technology Inc.

1.2 V

- 40 C

-

-

-

SMD/SMT

18 Bit

8 MWords

8000000

-

-

Tray

PLASTIC/EPOXY

HBGA

HBGA,

-

RECTANGULAR

GRID ARRAY, HEAT SINK/SLUG

Active

-

Active

NOT SPECIFIED

2.27

-

Yes

BGA

1.35 V

1.2 V

1.25 V

Synchronous

-

1.2500 V

-

-

-40 to 100 °C

-

-

-

-

3A991.B.2.B

-

-

-

-

-

8542.32.00.41

-

SRAM - Quad Port, Synchronous, QDR IIIe

1.2V ~ 1.35V

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

260

R-PBGA-B260

-

-

1.35 V

-

-

1.2 V

144Mbit

-

SYNCHRONOUS

800 MHz

1.9 A

10

SRAM

Parallel

-

-

8 M x 18

-

2.3 mm

18

-

-

-

-

-

144

-

-

PARALLEL

-

DDR SRAM

-

-

-

-

8M x 18

22 mm

14 mm

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Compliant

-

-

-

-

-

-

-

-

-

-

-

Bulk

-

-

-

-

-

-

100 °C

-40 °C

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

4

-

-

-

-

-

-

-

-

-

-

-

-

-

20 b

-

36 Mb

-

36

-

-

-

-

-

-

-

-

-

-

-

-

No

-

-

-

BGA-165

-

-

-

-

-

-

GSI Technology

-

DDR

15

-

Parallel

GSI Technology

-

400 MHz

400 MHz

1.9 V

+ 70 C

DDR

-

1.7 V

0 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

1 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Compliant

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaDDR-II+

1.8000 V

-

Commercial grade

0 to 85 °C

Bulk

GS8342T37BGD

-

-

-

SigmaDDR-II+ B2

-

85 °C

0 °C

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

165

-

-

1.8 V

-

-

-

-

36 Mbit

1

-

-

770 mA

450 ps

-

-

Pipelined

-

1 M x 36

-

-

-

-

19 Bit

SRAM

36 Mbit

-

-

-

Commercial

-

-

-

-

-

-

SRAM

-

-

-

No

-

-

-

BGA-119

-

-

-

-

-

-

-

-

-

-

-

Parallel

-

-

200 MHz

-

2.7, 3.6 V

+ 85 C

-

-

2.3, 3 V

- 40 C

-

-

-

SMD/SMT

36 Bit

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Compliant

-

FBGA

3.6 V

2.3 V

-

Synchronous

-

2.5, 3.3 V

-

-

-40 to 100 °C

Bulk

GS816236DB

-

-

-

-

-

100 °C

-40 °C

-

-

-

-

-

-

-

-

-

-

-

119

-

-

-

-

-

-

-

18 Mbit

4

-

-

230 mA

6.5@Flow-Through/3@P

-

-

-

-

512 k x 36

-

-

-

-

19 b

-

18 Mb

-

18

-

-

-

-

-

-

-

-

-

-

-

-

No

-

-

-

-

-

-

-

-

-

-

-

-

SDR

-

-

-

-

-

-

153.8@Flow-Through/200@Pipelined MHz

2, 2.7 V

-

-

-

1.7, 2.3 V

-

-

-

Surface Mount

-

18 Bit

2 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Compliant

-

TQFP

-

-

-

Synchronous

-

1.8, 2.5 V

-

Industrial grade

-40 to 100 °C

Bulk

-

-

-

-

-

-

100 °C

-40 °C

-

-

-

-

-

-

-

-

-

-

-

100

-

-

-

-

-

-

-

-

2

-

-

-

-

-

-

Flow-Through/Pipelined

-

-

-

-

-

-

21 Bit

-

36 Mbit

-

-

-

Industrial

-

-

-

-

-

-

-

-

-

-

No

-

8 Weeks

-

TQFP-100

YES

-

-

100

6.5 ns

-

GSI Technology

200 MHz

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS8320Z18AGT-200

200 MHz

-

2.7, 3.6 V

+ 70 C

SDR

-

2.3, 3 V

0 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

2 MWords

2000000

85 °C

-

-

PLASTIC/EPOXY

LQFP

LQFP, QFP100,.63X.87

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

-

NOT SPECIFIED

1.71

Details

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

-

Commercial grade

0 to 85 °C

Tray

GS8320Z18AGT

-

-

3A991.B.2.B

NBT Pipeline/Flow Through

-

85 °C

0 °C

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

-

Memory & Data Storage

CMOS

-

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

-

2.7 V

2.5/3.3 V

OTHER

2.3 V

36 Mbit

2

SYNCHRONOUS

-

185 mA, 220 mA

6.5 ns

-

-

Flow-Through/Pipelined

-

2 M x 18

3-STATE

1.6 mm

18

-

21 b

SRAM

36 Mbit

0.03 A

37748736 bit

-

Commercial

PARALLEL

COMMON

ZBT SRAM

2.3 V

-

-

SRAM

-

20 mm

14 mm

No

-

-

-

-

YES

144

-

144

-

-

-

-

-

-

GSI TECHNOLOGY

-

GSI Technology

GS4576S18GL-18

-

-

-

-

-

-

-

-

-

3

-

-

-

33554432 words

32000000

70 °C

-

-

PLASTIC/EPOXY

TFBGA

TFBGA,

-

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

End Of Life

BGA

-

NOT SPECIFIED

5.97

Compliant

Yes

-

-

-

1.8 V

-

-

-

-

-

-

-

-

e1

Yes

3A991.B.2.B

-

Tin/Silver/Copper (Sn/Ag/Cu)

95 °C

0 °C

AUTO/SELF REFRESH

8542.32.00.32

-

CMOS

-

BOTTOM

BALL

260

1

0.8 mm

compliant

144

R-PBGA-B144

Not Qualified

1.8 V

1.9 V

-

COMMERCIAL

1.7 V

-

1

SYNCHRONOUS

-

-

-

-

-

-

18 b

32MX18

-

1.2 mm

18

-

24 b

-

576 Mb

-

603979776 bit

533 MHz

-

-

-

DDR DRAM

-

MULTI BANK PAGE BURST

YES

-

-

18.5 mm

11 mm

No

-

-

-

BGA-260

-

-

-

-

-

-

GSI Technology

-

-

8

-

Parallel

GSI Technology

-

550 MHz

-

-

+ 85 C

DDR

-

-

0 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

N

-

-

1.4 V

1.25 V

-

-

SigmaQuad-IIIe

-

-

-

-

Tray

GS8673ED36BK

-

-

-

SigmaQuad-IIIe B4

-

-

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

72 Mbit

-

-

-

2.67 A

-

-

-

-

-

2 M x 36

-

-

-

-

-

SRAM

-

-

-

-

-

-

-

-

-

-

-

SRAM

-

-

-

-

-

-

-

-

YES

-

-

165

6.5 ns

-

-

-

-

-

GSI TECHNOLOGY

-

GSI Technology

GS88136BGD-200

-

-

-

-

-

-

-

-

-

3

-

-

-

262144 words

256000

70 °C

-

-

PLASTIC/EPOXY

LBGA

LBGA,

-

RECTANGULAR

GRID ARRAY, LOW PROFILE

Obsolete

BGA

-

NOT SPECIFIED

5.63

Non-Compliant

Yes

-

-

-

2.5 V

-

-

-

-

-

-

-

-

e1

-

3A991.B.2.B

-

TIN SILVER COPPER

70 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

-

CMOS

-

BOTTOM

BALL

260

1

1 mm

unknown

165

R-PBGA-B165

Not Qualified

-

2.7 V

-

COMMERCIAL

2.3 V

-

4

SYNCHRONOUS

-

-

-

-

-

-

-

256KX36

-

1.4 mm

36

-

18 b

-

9 Mb

-

9437184 bit

-

-

PARALLEL

-

CACHE SRAM

-

-

-

-

-

15 mm

13 mm

No

-

-

-

-

YES

-

-

119

8.5 ns

-

-

166 MHz

-

-

GSI TECHNOLOGY

-

GSI Technology

GS84036AB-166

-

-

-

-

-

-

-

-

-

3

-

-

-

131072 words

128000

70 °C

-

-

PLASTIC/EPOXY

BGA

BGA, BGA119,7X17,50

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

Obsolete

BGA

-

NOT SPECIFIED

5.73

-

No

-

-

-

3.3 V

-

-

-

-

-

-

-

-

e0

No

3A991.B.2.B

-

Tin/Lead (Sn/Pb)

-

-

FLOW-THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

SRAMs

CMOS

-

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

-

3.6 V

2.5/3.3,3.3 V

COMMERCIAL

3 V

-

-

SYNCHRONOUS

-

0.31 mA

-

-

-

-

-

128KX36

3-STATE

2.19 mm

36

-

-

-

-

0.02 A

4718592 bit

-

-

PARALLEL

COMMON

CACHE SRAM

3.14 V

-

-

-

-

22 mm

14 mm

-

-

-

-

-

YES

-

-

44

10 ns

-

-

-

-

-

GSI TECHNOLOGY

-

GSI Technology

GS71116ATP-10

-

-

-

-

-

-

-

-

-

3

-

-

-

65536 words

64000

70 °C

-

-

PLASTIC/EPOXY

TSOP2

TSOP2, TSOP44,.46,32

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

Obsolete

TSOP2

-

NOT SPECIFIED

5.13

-

No

-

-

-

3.3 V

-

-

-

-

-

-

-

-

e0

-

3A991.B.2.B

-

TIN LEAD

-

-

-

8542.32.00.41

SRAMs

CMOS

-

DUAL

GULL WING

NOT SPECIFIED

1

0.8 mm

compliant

44

R-PDSO-G44

Not Qualified

-

3.6 V

3.3 V

COMMERCIAL

3 V

-

-

ASYNCHRONOUS

-

0.1 mA

-

-

-

-

-

64KX16

3-STATE

1.2 mm

16

-

-

-

-

0.002 A

1048576 bit

-

-

PARALLEL

COMMON

STANDARD SRAM

3 V

-

-

-

-

18.41 mm

10.16 mm

-