- Organization
- Memory Size
- Mounting Styles
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- Supply Voltage-Min
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- Minimum Operating Temperature
- Supply Current-Max
- Maximum Clock Frequency
- Manufacturer
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GSI Memory
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Factory Lead Time | Package / Case | Surface Mount | Number of Terminals | Access Time-Max | Brand | Clock Frequency-Max (fCLK) | Data Rate Architecture | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Maximum Clock Frequency | Maximum Clock Rate | Maximum Operating Supply Voltage | Maximum Operating Temperature | Memory Types | Minimum Operating Supply Voltage | Minimum Operating Temperature | Moisture Sensitive | Moisture Sensitivity Levels | Mounting | Mounting Styles | Number of I/O Lines | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Timing Type | Tradename | Typical Operating Supply Voltage | Usage Level | Operating Temperature | Packaging | Series | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Memory Size | Number of Ports | Operating Mode | Supply Current-Max | Access Time | Architecture | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Product Type | Density | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Product Category | Length | Width |
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 GS8162Z36DB-200I GSI Technology | In Stock | - | - | 10 Weeks | BGA-119 | YES | 119 | 6.5 ns | GSI Technology | - | - | 21 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8162Z36DB-200I | 200 MHz | - | - | + 85 C | SDR | - | - 40 C | Yes | - | - | SMD/SMT | - | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, | - | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.25 | - | No | - | 3.6 V | 2.3 V | 2.5 V | - | NBT SRAM | - | - | - | Tray | GS8162Z36DB | - | - | 3A991.B.2.B | NBT Pipeline/Flow Through | - | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2.7 V | - | INDUSTRIAL | 2.3 V | 18 Mbit | - | SYNCHRONOUS | 230 mA | 6.5 ns | - | 512 k x 36 | - | 1.99 mm | 36 | - | SRAM | - | - | 18874368 bit | - | PARALLEL | - | ZBT SRAM | - | SRAM | 22 mm | 14 mm | ||
GS882Z18CGB-250 GSI Technology | In Stock | - | - | - | BGA-119 | - | - | - | - | - | - | - | - | Parallel | - | - | 250 MHz | - | - | + 70 C | - | - | 0 C | - | - | - | SMD/SMT | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 3.6 V | 2.3 V | - | - | - | - | - | - | - | GS882Z18CGB | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 9 Mbit | - | - | 145 mA, 180 mA | 5.5 ns | - | 512 k x 18 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
GS816236DB-375I GSI Technology | In Stock | - | - | 10 Weeks | BGA-119 | YES | 119 | 4.2 ns | GSI Technology | - | SDR | 21 | GSI TECHNOLOGY | Parallel | GSI Technology | GS816236DB-375I | 375 MHz | - | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | - | Surface Mount | SMD/SMT | 36 Bit | 512 kWords | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, | - | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.25 | - | No | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | SyncBurst | 2.5, 3.3 V | Industrial grade | -40 to 100 °C | Tray | GS816236DB | - | - | 3A991.B.2.B | Pipeline/Flow Through | - | ALSO OPERATES AT 3.3V | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | - | 2.7 V | - | INDUSTRIAL | 2.3 V | 18 Mbit | 4 | SYNCHRONOUS | 290 mA, 370 mA | 4.2 ns | Flow-Through/Pipelined | 512 k x 36 | - | 1.99 mm | 36 | - | SRAM | 18 Mbit | - | 18874368 bit | Industrial | PARALLEL | - | CACHE SRAM | - | SRAM | 22 mm | 14 mm | ||
GS8342T37BGD-333I GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | GSI Technology | - | DDR | 15 | - | Parallel | GSI Technology | - | 333 MHz | 333 MHz | 1.9 V | + 85 C | DDR | 1.7 V | - 40 C | Yes | - | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | Details | - | FBGA | 1.9 V | 1.7 V | - | Synchronous | SigmaDDR-II+ | 1.8000 V | Industrial grade | -40 to 100 °C | Tray | GS8342T37BGD | - | - | - | SigmaDDR-II+ B2 | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | 36 Mbit | 1 | - | 670 mA | - | Pipelined | 1 M x 36 | - | - | - | 19 Bit | SRAM | 36 Mbit | - | - | Industrial | - | - | - | - | SRAM | - | - | ||
GS881Z36CGT-250 GSI Technology | In Stock | - | - | 8 Weeks | TQFP-100 | YES | 100 | 5.5 ns | - | - | - | - | GSI TECHNOLOGY | Parallel | GSI Technology | GS881Z36CGT-250 | 250 MHz | - | - | + 70 C | - | - | 0 C | - | 3 | - | SMD/SMT | - | 262144 words | 256000 | 70 °C | - | PLASTIC/EPOXY | LQFP | LQFP, | - | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.52 | - | Yes | - | 3.6 V | 2.3 V | 2.5 V | - | - | - | - | - | - | - | e3 | Yes | 3A991.B.2.B | - | Matte Tin (Sn) | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY | 8542.32.00.41 | - | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.7 V | - | COMMERCIAL | 2.3 V | 9 Mbit | - | SYNCHRONOUS | 155 mA, 195 mA | 5.5 ns | - | 256 k x 36 | - | 1.6 mm | 36 | - | - | - | - | 9437184 bit | - | PARALLEL | - | ZBT SRAM | - | - | 20 mm | 14 mm | ||
GS8321E36AGD-150 GSI Technology | In Stock | - | - | 8 Weeks | BGA-165 | YES | 165 | 7.5 ns | GSI Technology | 150 MHz | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8321E36AGD-150 | 150 MHz | 133@Flow-Through/150@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | 3 | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 85 °C | - | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.31 | Details | Yes | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | SyncBurst | 2.5, 3.3 V | Commercial grade | 0 to 85 °C | Tray | GS8321E36AGD | e1 | Yes | 3A991.B.2.B | DCD Pipeline/Flow Through | TIN SILVER COPPER | IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE | - | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2.7 V | 2.5/3.3 V | OTHER | 2.3 V | 36 Mbit | 4 | SYNCHRONOUS | 190 mA, 200 mA | 7.5 ns | Flow-Through/Pipelined | 1 M x 36 | 3-STATE | 1.4 mm | 36 | 20 Bit | SRAM | 36 Mbit | 0.03 A | 37748736 bit | Commercial | PARALLEL | COMMON | CACHE SRAM | 2.3 V | SRAM | 15 mm | 13 mm | ||
GS8160E36DGT-200IV GSI Technology | In Stock | - | - | - | TQFP-100 | - | - | - | GSI Technology | - | SDR | 18 | - | Parallel | GSI Technology | - | 200 MHz | 200 MHz | 2.7, 3.6 V | + 100 C | SDR | 2.3, 3 V | - 40 C | Yes | - | Surface Mount | SMD/SMT | 36 Bit | 512 kWords | - | - | - | - | - | - | - | - | - | - | - | - | - | Details | - | TQFP | 2.7 V | 1.7 V | - | Synchronous | SyncBurst | 2.5, 3.3 V | Industrial grade | -40 to 85 °C | Tray | GS8160E36DGT | - | - | - | DCD Synchronous Burst | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 100 | - | - | - | - | - | - | 18 Mbit | 4 | - | 225 mA, 230 mA | 6.5 ns | Flow-Through/Pipelined | 512 k x 36 | - | - | - | 19 Bit | SRAM | 18 Mbit | - | - | Industrial | - | - | - | - | SRAM | - | - | ||
GS8672Q18BE-400I GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | - | - | - | 15 | - | Parallel | - | - | 400 MHz | - | - | + 85 C | QDR-II | - | - 40 C | Yes | - | - | SMD/SMT | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1.9 V | 1.7 V | - | - | SigmaQuad-II | - | - | - | Tray | GS8672Q18BE | - | - | - | SigmaQuad-II | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 72 Mbit | - | - | 1.38 A | - | - | 4 M x 18 | - | - | - | - | - | - | - | 72 | - | - | - | - | - | - | - | - | ||
GS8672D18BGE-333I GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | GSI Technology | - | - | 15 | - | Parallel | GSI Technology | - | 333 MHz | - | - | + 85 C | QDR-II | - | - 40 C | Yes | - | - | SMD/SMT | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Details | - | - | 1.9 V | 1.7 V | - | - | SigmaQuad-II | - | - | - | Tray | GS8672D18BGE | - | - | - | SigmaQuad-II | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 72 Mbit | - | - | 1.21 A | - | - | 4 M x 18 | - | - | - | - | SRAM | - | - | 72 | - | - | - | - | - | SRAM | - | - | ||
GS84032CGB-150 GSI Technology | In Stock | - | - | - | BGA-119 | YES | 119 | - | - | - | - | 84 | GSI TECHNOLOGY | Parallel | - | GS84032CGB-150 | 150 MHz | - | - | + 70 C | SDR | - | 0 C | Yes | - | - | SMD/SMT | - | 131072 words | 128000 | 70 °C | - | PLASTIC/EPOXY | BGA | BGA, | - | RECTANGULAR | GRID ARRAY | Active | - | NOT SPECIFIED | 5.18 | Details | Yes | - | 3.6 V | 2.3 V | 2.5 V | - | SyncBurst | - | - | - | Tray | GS84032CGB | - | - | 3A991.B.2.B | Pipeline/Flow Through | - | IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE | - | - | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | - | R-PBGA-B119 | - | 2.7 V | - | COMMERCIAL | 2.3 V | 4 Mbit | - | SYNCHRONOUS | 130 mA, 140 mA | 7.5 ns | - | 128 k x 32 | - | 1.99 mm | 32 | - | - | - | - | 4194304 bit | - | PARALLEL | - | CACHE SRAM | - | - | 22 mm | 14 mm | ||
GS8321E36AD-200 GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | - | - | SDR | - | - | Parallel | - | - | 200 MHz | 153.8@Flow-Through/200@Pipelined MHz | 2.7, 3.6 V | + 70 C | - | 2.3, 3 V | 0 C | - | - | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | FBGA | 3.6 V | 2.3 V | - | Synchronous | - | 2.5, 3.3 V | Commercial grade | 0 to 85 °C | - | GS8321E36AD | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | 36 Mbit | 4 | - | 205 mA, 240 mA | 6.5 ns | Flow-Through/Pipelined | 1 M x 36 | - | - | - | 20 Bit | - | 36 Mbit | - | - | Commercial | - | - | - | - | - | - | - | ||
GS816218DGD-150 GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | GSI Technology | - | - | 36 | - | Parallel | GSI Technology | - | 150 MHz | - | - | + 70 C | SDR | - | 0 C | Yes | - | - | SMD/SMT | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Details | - | - | 3.6 V | 2.3 V | - | - | SyncBurst | - | - | - | Tray | GS816218DGD | - | - | - | Pipeline/Flow Through | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 18 Mbit | - | - | 170 mA, 180 mA | 7.5 ns | - | 1 M x 18 | - | - | - | - | SRAM | - | - | - | - | - | - | - | - | SRAM | - | - | ||
GS816136DGT-150 GSI Technology | In Stock | - | - | 10 Weeks | TQFP-100 | YES | 100 | 7.5 ns | GSI Technology | - | - | 36 | GSI TECHNOLOGY | Parallel | GSI Technology | GS816136DGT-150 | 150 MHz | - | - | + 70 C | SDR | - | 0 C | Yes | - | - | SMD/SMT | - | 524288 words | 512000 | 70 °C | - | PLASTIC/EPOXY | QFP | QFP, | - | RECTANGULAR | FLATPACK | Active | QFP | NOT SPECIFIED | 5.26 | Details | Yes | - | 3.6 V | 2.3 V | 2.5 V | - | SyncBurst | - | - | - | Tray | GS816136DGT | - | - | 3A991.B.2.B | Pipeline/Flow Through | - | FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V | 8542.32.00.41 | Memory & Data Storage | CMOS | QUAD | GULL WING | NOT SPECIFIED | 1 | - | compliant | 100 | R-PQFP-G100 | - | 2.7 V | - | COMMERCIAL | 2.3 V | 18 Mbit | - | SYNCHRONOUS | 180 mA, 190 mA | 7.5 ns | - | 512 k x 36 | - | - | 36 | - | SRAM | - | - | 18874368 bit | - | PARALLEL | - | CACHE SRAM | - | SRAM | - | - | ||
GS816132DGD-150V GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | - | - | SDR | - | - | Parallel | - | - | 150 MHz | 133.3@Flow-Through/150@Pipelined MHz | 2, 2.7 V | + 85 C | - | 1.7, 2.3 V | 0 C | - | - | Surface Mount | SMD/SMT | 32 Bit | 512 kWords | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | FBGA | 2.7 V | 1.7 V | - | Synchronous | - | 1.8, 2.5 V | Commercial grade | 0 to 85 °C | - | GS816132DGD | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | 18 Mbit | 4 | - | 175 mA, 190 mA | 7.5 ns | Flow-Through/Pipelined | 512 k x 32 | - | - | - | 19 Bit | - | 18 Mbit | - | - | Commercial | - | - | - | - | - | - | - | ||
GS881Z36CGT-150 GSI Technology | In Stock | - | - | - | TQFP-100 | - | - | - | GSI Technology | - | - | 72 | - | Parallel | GSI Technology | - | 150 MHz | - | - | + 70 C | SDR | - | 0 C | Yes | - | - | SMD/SMT | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Details | - | - | 3.6 V | 2.3 V | - | - | NBT SRAM | - | - | - | Tray | GS881Z36CGT | - | - | - | NBT Pipeline/Flow Through | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 9 Mbit | - | - | 130 mA, 140 mA | 7.5 ns | - | 256 k x 36 | - | - | - | - | SRAM | - | - | - | - | - | - | - | - | SRAM | - | - | ||
GS8161E32DGT-250 GSI Technology | In Stock | - | - | - | TQFP-100 | - | - | - | GSI Technology | - | - | 36 | - | Parallel | GSI Technology | - | 250 MHz | - | - | + 70 C | SDR | - | 0 C | Yes | - | - | SMD/SMT | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Details | - | - | 3.6 V | 2.3 V | - | - | NBT SRAM | - | - | - | Tray | GS8161E32DGT | - | - | - | DCD Pipeline/Flow Through | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 18 Mbit | - | - | 230 mA, 250 mA | 5.5 ns | - | 512 k x 32 | - | - | - | - | SRAM | - | - | - | - | - | - | - | - | SRAM | - | - | ||
GS8672Q20BE-450I GSI Technology | In Stock | - | - | - | BGA-165 | - | - | - | GSI Technology | - | - | 15 | - | Parallel | GSI Technology | - | 450 MHz | - | - | + 85 C | QDR-II | - | - 40 C | Yes | - | - | SMD/SMT | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1.9 V | 1.7 V | - | - | SigmaQuad-II+ | - | - | - | Tray | GS8672Q20BE | - | - | - | SigmaQuad-II+ B2 | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 72 Mbit | - | - | 1.51 A | - | - | 4 M x 18 | - | - | - | - | SRAM | - | - | 72 | - | - | - | - | - | SRAM | - | - | ||
GS8342TT07BD-300I GSI Technology | In Stock | - | - | 10 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 300 MHz | DDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8342TT07BD-300I | 300 MHz | 300 MHz | 1.9 V | + 85 C | DDR | 1.7 V | - 40 C | Yes | - | Surface Mount | SMD/SMT | 8 Bit | 4 MWords | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.36 | - | No | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaDDR-II+ | 1.8000 V | Industrial grade | -40 to 100 °C | Tray | GS8342TT07BD | e0 | - | 3A991.B.2.B | SigmaDDR-II+ B2 | Tin/Lead (Sn/Pb) | PIPELINED ARCHITECTURE, LATE WRITE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | INDUSTRIAL | 1.7 V | 36 Mbit | 1 | SYNCHRONOUS | 460 mA | - | Pipelined | 4 M x 8 | 3-STATE | 1.4 mm | 8 | 21 Bit | SRAM | 36 Mbit | - | 33554432 bit | Industrial | PARALLEL | COMMON | DDR SRAM | 1.7 V | SRAM | 15 mm | 13 mm | ||
GS8322Z36AD-250I GSI Technology | In Stock | - | - | 3 Weeks | BGA-165 | YES | 165 | 5.5 ns | GSI Technology | 250 MHz | SDR | 14 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8322Z36AD-250I | 250 MHz | 181.8@Flow-Through/250@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | - | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.12 | - | No | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | NBT SRAM | 2.5, 3.3 V | Industrial grade | -40 to 100 °C | Tray | GS8322Z36AD | e0 | No | 3A991.B.2.B | NBT Pipeline/Flow Through | Tin/Lead (Sn/Pb) | ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | 36 Mbit | 4 | SYNCHRONOUS | 250 mA, 305 mA | 5.5 ns | Flow-Through/Pipelined | 1 M x 36 | 3-STATE | 1.4 mm | 36 | 20 Bit | SRAM | 36 Mbit | 0.04 A | 37748736 bit | Industrial | PARALLEL | COMMON | ZBT SRAM | 2.3 V | SRAM | 15 mm | 13 mm | ||
GS881E18CGT-150 GSI Technology | In Stock | - | - | - | TQFP-100 | - | - | - | GSI Technology | - | - | 72 | - | Parallel | GSI Technology | - | 150 MHz | - | - | + 70 C | SDR | - | 0 C | Yes | - | - | SMD/SMT | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Details | - | - | 3.6 V | 2.3 V | - | - | SyncBurst | - | - | - | Tray | GS881E18CGT | - | - | - | DCD Pipeline/Flow Through | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 9 Mbit | - | - | 120 mA, 130 mA | 7.5 ns | - | 512 k x 18 | - | - | - | - | SRAM | - | - | - | - | - | - | - | - | SRAM | - | - |