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Length

Width

Radiation Hardening

GS8162Z18DGB-250I
GS8162Z18DGB-250I

GSI Technology

In Stock

-

-

10 Weeks

-

BGA-119

YES

-

119

5.5 ns

GSI Technology

-

-

21

GSI TECHNOLOGY

Parallel

GSI Technology

GS8162Z18DGB-250I

250 MHz

-

-

+ 85 C

SDR

-

- 40 C

Yes

-

-

SMD/SMT

-

1048576 words

1000000

85 °C

-40 °C

PLASTIC/EPOXY

BGA

BGA,

-

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.26

Details

Yes

-

3.6 V

2.3 V

2.5 V

-

NBT SRAM

-

-

-

-

Tray

GS8162Z18DGB

-

-

3A991.B.2.B

NBT Pipeline/Flow Through

-

-

-

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

-

2.7 V

-

INDUSTRIAL

2.3 V

-

-

18 Mbit

-

-

SYNCHRONOUS

230 mA, 250 mA

5.5 ns

-

-

1 M x 18

-

1.99 mm

18

-

SRAM

-

-

18874368 bit

-

PARALLEL

-

-

-

ZBT SRAM

-

-

-

SRAM

22 mm

14 mm

-

GS4576C36GL-25I
GS4576C36GL-25I

GSI Technology

In Stock

-

-

-

-

uBGA-144

YES

-

144

-

-

-

-

18

GSI TECHNOLOGY

-

-

GS4576C36GL-25I

400 MHz

-

-

+ 95 C

-

-

- 40 C

Yes

-

-

SMD/SMT

-

16777216 words

16000000

85 °C

-40 °C

PLASTIC/EPOXY

TFBGA

TFBGA,

-

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

End Of Life

BGA

NOT SPECIFIED

5.09

Details

Yes

-

1.9 V

1.7 V

1.8 V

-

-

-

0.423288 oz

-

-

Tray

-

-

-

3A991.B.2.B

SDRAM - DDR

-

-

-

AUTO/SELF REFRESH

8542.32.00.32

-

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

0.8 mm

compliant

144

R-PBGA-B144

Not Qualified

-

1.9 V

-

INDUSTRIAL

1.7 V

-

-

576 Mbit

1

-

SYNCHRONOUS

570 mA

20 ns

-

36 bit

16 M x 36

-

1.2 mm

36

-

-

-

-

603979776 bit

-

-

-

-

-

DDR DRAM

-

MULTI BANK PAGE BURST

YES

-

18.5 mm

11 mm

-

GS4576C18GL-25I
GS4576C18GL-25I

GSI Technology

In Stock

-

-

-

-

uBGA-144

YES

-

144

-

-

-

-

18

GSI TECHNOLOGY

-

-

GS4576C18GL-25I

400 MHz

-

-

+ 95 C

-

-

- 40 C

Yes

-

-

SMD/SMT

-

33554432 words

32000000

85 °C

-40 °C

PLASTIC/EPOXY

TFBGA

TFBGA,

-

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

End Of Life

BGA

NOT SPECIFIED

5.09

Details

Yes

-

1.9 V

1.7 V

1.8 V

-

-

-

0.423288 oz

-

-

Tray

-

-

-

3A991.B.2.B

SDRAM - DDR

-

-

-

AUTO/SELF REFRESH

8542.32.00.32

-

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

0.8 mm

compliant

144

R-PBGA-B144

Not Qualified

-

1.9 V

-

INDUSTRIAL

1.7 V

-

-

576 Mbit

1

-

SYNCHRONOUS

500 mA

20 ns

-

18 bit

32 M x 18

-

1.2 mm

18

-

-

-

-

603979776 bit

-

-

-

-

-

DDR DRAM

-

MULTI BANK PAGE BURST

YES

-

18.5 mm

11 mm

-

GS816018BGT-150
GS816018BGT-150

GSI Technology

In Stock

-

-

-

-

-

YES

-

100

7.5 ns

-

150 MHz

-

-

GSI TECHNOLOGY

-

GSI Technology

GS816018BGT-150

-

-

-

-

-

-

-

-

3

-

-

-

1048576 words

1000000

70 °C

-

PLASTIC/EPOXY

LQFP

LQFP, QFP100,.63X.87

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

Obsolete

QFP

NOT SPECIFIED

5.39

-

Yes

-

-

-

2.5 V

-

-

-

-

-

-

-

-

e3

Yes

3A991.B.2.B

-

PURE MATTE TIN

-

-

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

SRAMs

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

-

2.7 V

2.5/3.3 V

COMMERCIAL

2.3 V

-

-

-

-

-

SYNCHRONOUS

0.185 mA

-

-

-

1MX18

3-STATE

1.6 mm

18

-

-

-

0.04 A

18874368 bit

-

PARALLEL

COMMON

-

-

CACHE SRAM

2.3 V

-

-

-

20 mm

14 mm

-

GS74116AGP-10
GS74116AGP-10

GSI Technology

In Stock

-

-

6 Weeks

Surface Mount

TSOP-44

YES

44

44

10 ns

GSI Technology

-

-

135

GSI TECHNOLOGY

Parallel

GSI Technology

GS74116AGP-10

-

-

3.6 V

+ 70 C

SDR

3 V

0 C

Yes

3

Surface Mount

SMD/SMT

16 Bit

256 kWords

256000

70 °C

-

PLASTIC/EPOXY

TSOP2

TSOP2, TSOP44,.46,32

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

Active

TSOP2

NOT SPECIFIED

1.36

Compliant

Yes

TSOP-II

3.6 V

3 V

3.3 V

Asynchronous

-

3.3000 V

0.016882 oz

Commercial grade

0 to 70 °C

-

GS74116AGP

e3

Yes

3A991.B.2.B

Asynchronous

Matte Tin (Sn)

70 °C

0 °C

-

8542.32.00.41

Memory & Data Storage

CMOS

DUAL

GULL WING

260

1

0.8 mm

compliant

44

R-PDSO-G44

Not Qualified

3.3 V

3.6 V

3.3 V

COMMERCIAL

3 V

3.6 V

3 V

4 Mbit

1

105 mA

ASYNCHRONOUS

105 mA

10 ns

-

-

256 k x 16

3-STATE

1.2 mm

16

18 Bit

SRAM

4 Mbit

0.01 A

4194304 bit

Commercial

PARALLEL

COMMON

Asynchronous

16 b

STANDARD SRAM

3 V

-

-

SRAM

18.41 mm

10.16 mm

No

GS81302TT19E-400I
GS81302TT19E-400I

GSI Technology

In Stock

-

-

12 Weeks

-

BGA-165

YES

-

165

0.45 ns

GSI Technology

-

DDR

10

GSI TECHNOLOGY

Parallel

GSI Technology

GS81302TT19E-400I

400 MHz

400 MHz

1.9 V

+ 85 C

DDR-II

1.7 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

8 MWords

8000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA,

-

RECTANGULAR

GRID ARRAY, LOW PROFILE

Not Recommended

BGA

NOT SPECIFIED

5.06

-

No

FBGA

1.9 V

1.7 V

1.8 V

Synchronous

SigmaDDR-II+

1.8000 V

-

Industrial grade

-40 to 100 °C

Tray

GS81302TT19E

-

No

3A991.B.2.B

SigmaDDR-II+ B2

-

-

-

PIPELINED ARCHITECTURE, LATE WRITE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

-

1.9 V

-

INDUSTRIAL

1.7 V

-

-

144 Mbit

1

-

SYNCHRONOUS

905 mA

-

Pipelined

-

8 M x 18

-

1.5 mm

18

22 Bit

SRAM

144 Mbit

-

150994944 bit

Industrial

PARALLEL

-

-

-

DDR SRAM

-

-

-

SRAM

17 mm

15 mm

-

GS81302TT38GE-500I
GS81302TT38GE-500I

GSI Technology

In Stock

-

-

-

-

BGA-165

-

-

-

-

GSI Technology

-

-

10

-

Parallel

GSI Technology

-

500 MHz

-

1.9 V

+ 85 C

DDR-II

1.7 V

- 40 C

Yes

-

-

SMD/SMT

36 Bit

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

-

1.9 V

1.7 V

-

Synchronous

SigmaDDR-II+

1.8000 V

-

Industrial grade

-40 to 100 °C

Tray

GS81302TT38GE

-

-

-

SigmaDDR-II+

-

-

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

-

-

-

144 Mbit

-

-

-

1.31 A

0.45

-

-

4 M x 36

-

-

-

-

SRAM

-

-

144

Industrial

-

-

-

-

-

-

-

-

SRAM

-

-

-

GS816236DGB-150
GS816236DGB-150

GSI Technology

In Stock

-

-

10 Weeks

-

BGA-119

YES

-

119

7.5 ns

GSI Technology

-

-

21

GSI TECHNOLOGY

Parallel

GSI Technology

GS816236DGB-150

150 MHz

-

-

+ 70 C

SDR

-

0 C

Yes

-

-

SMD/SMT

-

524288 words

512000

70 °C

-

PLASTIC/EPOXY

BGA

BGA,

-

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.25

Details

Yes

-

3.6 V

2.3 V

2.5 V

-

SyncBurst

-

-

-

-

Tray

GS816236DGB

-

-

3A991.B.2.B

Pipeline/Flow Through

-

-

-

ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

-

-

2.7 V

-

COMMERCIAL

2.3 V

-

-

18 Mbit

-

-

SYNCHRONOUS

180 mA, 190 mA

7.5 ns

-

-

512 k x 36

-

1.99 mm

36

-

SRAM

-

-

18874368 bit

-

PARALLEL

-

-

-

CACHE SRAM

-

-

-

SRAM

22 mm

14 mm

-

GS8160E36DGT-250I
GS8160E36DGT-250I

GSI Technology

In Stock

-

-

-

-

TQFP-100

-

-

-

-

GSI Technology

-

-

36

-

Parallel

GSI Technology

-

250 MHz

-

-

+ 100 C

SDR

-

- 40 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

-

3.6 V

2.3 V

-

-

SyncBurst

-

-

-

-

Tray

GS8160E36DGT

-

-

-

Pipeline/Flow Through

-

-

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

18 Mbit

-

-

-

250 mA, 270 mA

5.5 ns

-

-

512 k x 36

-

-

-

-

SRAM

-

-

-

-

-

-

-

-

-

-

-

-

SRAM

-

-

-

GS8342D09BD-250I
GS8342D09BD-250I

GSI Technology

In Stock

-

-

10 Weeks

-

BGA-165

YES

-

165

0.45 ns

GSI Technology

250 MHz

-

15

GSI TECHNOLOGY

Parallel

GSI Technology

GS8342D09BD-250I

250 MHz

250 MHz

1.9 V

+ 85 C

DDR

1.7 V

- 40 C

Yes

-

-

SMD/SMT

9 Bit

4194304 words

4000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

-

5.35

-

No

-

1.9 V

1.7 V

1.8 V

Synchronous

SigmaQuad-II

1.8000 V

-

Industrial grade

-40 to 100 °C

Tray

GS8342D09BD

-

-

3A991.B.2.B

SigmaQuad-II

-

-

-

PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

-

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

-

1.9 V

1.5/1.8,1.8 V

INDUSTRIAL

1.7 V

-

-

36 Mbit

-

-

SYNCHRONOUS

470 mA

0.45

-

-

4 M x 9

3-STATE

1.4 mm

9

-

SRAM

-

0.195 A

36

Industrial

PARALLEL

SEPARATE

-

-

QDR SRAM

1.7 V

-

-

SRAM

15 mm

13 mm

-

GS8160E36DGT-150V
GS8160E36DGT-150V

GSI Technology

In Stock

-

-

-

-

TQFP-100

-

-

-

-

GSI Technology

-

SDR

18

-

Parallel

GSI Technology

-

150 MHz

150 MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

0 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

512 kWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

TQFP

2.7 V

1.7 V

-

Synchronous

SyncBurst

2.5, 3.3 V

-

Commercial grade

0 to 70 °C

Tray

GS8160E36DGT

-

-

-

DCD Synchronous Burst

-

-

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

100

-

-

-

-

-

-

-

-

-

18 Mbit

4

-

-

175 mA, 190 mA

7.5 ns

Flow-Through/Pipelined

-

512 k x 36

-

-

-

19 Bit

SRAM

18 Mbit

-

-

Commercial

-

-

-

-

-

-

-

-

SRAM

-

-

-

GS8322Z36AB-200
GS8322Z36AB-200

GSI Technology

In Stock

-

-

-

-

BGA-119

-

-

-

-

GSI Technology

-

SDR

14

-

Parallel

GSI Technology

-

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

-

Surface Mount

SMD/SMT

36 Bit

1 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

N

-

FBGA

3.6 V

2.3 V

-

Synchronous

NBT SRAM

2.5, 3.3 V

-

Commercial grade

0 to 85 °C

Tray

GS8322Z36AB

-

-

-

NBT Pipeline/Flow Through

-

-

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

119

-

-

-

-

-

-

-

-

-

36 Mbit

4

-

-

205 mA, 240 mA

6.5 ns

Flow-Through/Pipelined

-

1 M x 36

-

-

-

20 Bit

SRAM

36 Mbit

-

-

Commercial

-

-

-

-

-

-

-

-

SRAM

-

-

-

GS8161E32DGD-200V
GS8161E32DGD-200V

GSI Technology

In Stock

-

-

-

-

BGA-165

-

-

-

-

GSI Technology

-

SDR

18

-

Parallel

GSI Technology

-

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

-

Surface Mount

SMD/SMT

32 Bit

512 kWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

2.7 V

1.7 V

-

Synchronous

SyncBurst

1.8, 2.5 V

-

Commercial grade

0 to 70 °C

Tray

GS8161E32DGD

-

-

-

DCD Pipeline/Flow Through

-

-

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

-

-

-

18 Mbit

4

-

-

205 mA, 210 mA

6.5 ns

Flow-Through/Pipelined

-

512 k x 32

-

-

-

19 Bit

SRAM

18 Mbit

-

-

Commercial

-

-

-

-

-

-

-

-

SRAM

-

-

-

GS8672D20BGE-633
GS8672D20BGE-633

GSI Technology

In Stock

-

-

-

-

BGA-165

-

-

-

-

GSI Technology

-

-

15

-

Parallel

GSI Technology

-

633 MHz

-

-

+ 70 C

QDR-II

-

0 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

-

1.9 V

1.7 V

-

-

SigmaQuad-II+

-

-

-

-

Tray

GS8672D20BGE

-

-

-

SigmaQuad-II+ B4

-

-

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

72 Mbit

-

-

-

1.95 A

-

-

-

4 M x 18

-

-

-

-

SRAM

-

-

72

-

-

-

-

-

-

-

-

-

SRAM

-

-

-

GS8161E32DGT-200IV
GS8161E32DGT-200IV

GSI Technology

In Stock

-

-

-

-

TQFP-100

-

-

-

-

GSI Technology

-

-

18

-

Parallel

GSI Technology

-

200 MHz

-

-

+ 85 C

SDR

-

- 40 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

-

2.7 V

1.7 V

-

-

NBT SRAM

-

-

-

-

Tray

GS8161E32DGT

-

-

-

DCD Pipeline/Flow Through

-

-

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

18 Mbit

-

-

-

225 mA, 230 mA

6.5 ns

-

-

512 k x 32

-

-

-

-

SRAM

-

-

-

-

-

-

-

-

-

-

-

-

SRAM

-

-

-

GS8342T06BD-400
GS8342T06BD-400

GSI Technology

In Stock

-

-

-

-

BGA-165

-

-

-

-

-

-

DDR

-

-

Parallel

-

-

400 MHz

400 MHz

-

+ 70 C

-

-

0 C

-

-

Surface Mount

SMD/SMT

8 Bit

4 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FBGA

1.9 V

1.7 V

-

Synchronous

-

1.8000 V

-

Commercial grade

0 to 85 °C

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

165

-

-

-

-

-

-

-

-

-

36 Mbit

1

-

-

600 mA

-

Pipelined

-

4 M x 8

-

-

-

-

-

36 Mbit

-

-

Commercial

-

-

-

-

-

-

-

-

-

-

-

-

GS8160E18DGT-200I
GS8160E18DGT-200I

GSI Technology

In Stock

-

-

-

-

TQFP-100

-

-

-

-

GSI Technology

-

-

36

-

Parallel

GSI Technology

-

200 MHz

-

-

+ 100 C

SDR

-

- 40 C

Yes

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

-

3.6 V

2.3 V

-

-

SyncBurst

-

-

-

-

Tray

GS8160E18DGT

-

-

-

Pipeline/Flow Through

-

-

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

18 Mbit

-

-

-

215 mA

6.5 ns

-

-

1 M x 18

-

-

-

-

SRAM

-

-

-

-

-

-

-

-

-

-

-

-

SRAM

-

-

-

GS8342Q19BGD-200
GS8342Q19BGD-200

GSI Technology

In Stock

-

-

-

-

BGA-165

-

-

-

-

GSI Technology

-

QDR

15

-

Parallel

GSI Technology

-

200 MHz

200 MHz

-

+ 70 C

DDR

-

0 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

2 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaQuad-II+

1.8000 V

-

Commercial grade

0 to 85 °C

Tray

GS8342Q19BGD

-

-

-

SigmaQuad-II+ B2

-

-

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

-

-

-

36 Mbit

2

-

-

555 mA

-

Pipelined

-

2 M x 18

-

-

-

20 Bit

SRAM

36 Mbit

-

-

Commercial

-

-

-

-

-

-

-

-

SRAM

-

-

-

GS816218DGB-375I
GS816218DGB-375I

GSI Technology

In Stock

-

-

-

-

BGA-119

-

-

-

-

GSI Technology

-

SDR

21

-

Parallel

GSI Technology

-

375 MHz

238@Flow-Through/375@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

-

Surface Mount

SMD/SMT

18 Bit

1 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

3.6 V

2.3 V

-

Synchronous

SyncBurst

2.5, 3.3 V

-

Industrial grade

-40 to 100 °C

Tray

GS816218DGB

-

-

-

Pipeline/Flow Through

-

-

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

119

-

-

-

-

-

-

-

-

-

18 Mbit

2

-

-

270 mA, 340 mA

4.2 ns

Flow-Through/Pipelined

-

1 M x 18

-

-

-

20 Bit

SRAM

18 Mbit

-

-

Industrial

-

-

-

-

-

-

-

-

SRAM

-

-

-

GS8342D07BGD-333
GS8342D07BGD-333

GSI Technology

In Stock

-

-

-

-

BGA-165

-

-

-

-

GSI Technology

-

QDR

15

-

Parallel

GSI Technology

-

333 MHz

333 MHz

1.9 V

+ 70 C

DDR

1.7 V

0 C

Yes

-

Surface Mount

SMD/SMT

8 Bit

4 MWords

-

-

-

-

-

-

-

-

-

-

-

-

-

Details

-

FBGA

1.9 V

1.7 V

-

Synchronous

SigmaQuad-II+

1.8000 V

-

Commercial grade

0 to 85 °C

Tray

GS8342D07BGD

-

-

-

SigmaQuad-II+ B4

-

-

-

-

-

Memory & Data Storage

-

-

-

-

-

-

-

165

-

-

-

-

-

-

-

-

-

36 Mbit

2

-

-

605 mA

-

Pipelined

-

4 M x 8

-

-

-

20 Bit

SRAM

36 Mbit

-

-

Commercial

-

-

-

-

-

-

-

-

SRAM

-

-

-