- FET Feature
- FET Type
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Moisture Sensitivity Level (MSL)
- Mounting Type
- Operating Temperature
- Package / Case
- Packaging
- Part Status
- Published
- Rds On (Max) @ Id, Vgs
Attribute column
Manufacturer
Infineon Transistors - FETs, MOSFETs - Arrays
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Factory Lead Time | Contact Plating | Mount | Mounting Type | Package / Case | Number of Pins | Transistor Element Material | Current - Continuous Drain (Id) @ 25℃ | Number of Elements | Turn Off Delay Time | Operating Temperature | Packaging | Published | Series | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Resistance | Terminal Finish | Additional Feature | HTS Code | Power Rating | Voltage - Rated DC | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Current Rating | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Reference Standard | Configuration | Row Spacing | Number of Channels | Element Configuration | Operating Mode | Power Dissipation | Case Connection | Turn On Delay Time | Power - Max | FET Type | Transistor Application | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Halogen Free | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Drain to Source Voltage (Vdss) | Polarity/Channel Type | Fall Time (Typ) | Continuous Drain Current (ID) | Threshold Voltage | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | Drain to Source Breakdown Voltage | Pulsed Drain Current-Max (IDM) | Dual Supply Voltage | Avalanche Energy Rating (Eas) | FET Technology | Recovery Time | Max Junction Temperature (Tj) | FET Feature | Nominal Vgs | Height | Length | Width | Radiation Hardening | REACH SVHC | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 IRF7303TRPBF Infineon Technologies | 1516 | - | Datasheet | 12 Weeks | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | - | 2 | 22 ns | -55°C~150°C TJ | Tape & Reel (TR) | 1997 | HEXFET® | e3 | - | Active | 1 (Unlimited) | 8 | - | EAR99 | 50mOhm | Matte Tin (Sn) | ULTRA LOW RESISTANCE | - | - | 30V | 2W | - | GULL WING | 260 | - | 4.9A | 30 | IRF7303PBF | - | - | - | - | Dual | ENHANCEMENT MODE | 2W | - | 6.8 ns | - | 2 N-Channel (Dual) | SWITCHING | 50m Ω @ 2.4A, 10V | 1V @ 250μA | - | 520pF @ 25V | 25nC @ 10V | 21ns | - | - | 7.7 ns | 4.9A | 1V | 20V | - | - | - | 30V | - | - | - | METAL-OXIDE SEMICONDUCTOR | 71 ns | - | Standard | 1 V | 1.4986mm | 4.9784mm | 3.9878mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
IRF7341TRPBF Infineon Technologies | 4000 | - | Datasheet | 12 Weeks | Tin | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | - | 2 | 32 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2004 | HEXFET® | e3 | - | Active | 1 (Unlimited) | 8 | - | EAR99 | 50mOhm | - | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | - | - | 55V | 2W | - | GULL WING | 260 | - | 4.7A | 30 | IRF7341PBF | - | - | 6.3 mm | 2 | Dual | ENHANCEMENT MODE | 2W | - | 8.3 ns | - | 2 N-Channel (Dual) | SWITCHING | 50m Ω @ 4.7A, 10V | 1V @ 250μA | - | 740pF @ 25V | 36nC @ 10V | 3.2ns | - | - | 13 ns | 4.7A | 1V | 20V | - | 5.1A | - | 55V | - | 55V | 140 mJ | METAL-OXIDE SEMICONDUCTOR | 90 ns | 150°C | Logic Level Gate | 1 V | 1.75mm | 4.9784mm | 3.9878mm | No | No SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||
IRF7309TRPBF Infineon Technologies | 1415 | - | Datasheet | 12 Weeks | Tin | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 4A 3A | 2 | 25 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2001 | HEXFET® | e3 | - | Active | 1 (Unlimited) | 8 | - | EAR99 | 50mOhm | - | ULTRA LOW RESISTANCE | - | - | - | 1.4W | DUAL | GULL WING | - | - | 4A | - | IRF7309PBF | - | - | 6.3 mm | - | - | ENHANCEMENT MODE | 1.4W | - | - | - | N and P-Channel | SWITCHING | 50m Ω @ 2.4A, 10V | 1V @ 250μA | - | 520pF @ 15V | 25nC @ 4.5V | - | - | N-CHANNEL AND P-CHANNEL | - | 4A | 1V | 20V | - | 4A | - | 30V | 16A | - | - | METAL-OXIDE SEMICONDUCTOR | - | - | Standard | 1 V | 1.4986mm | 4.9784mm | 4.05mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
IRF7307TRPBF Infineon Technologies | 7 | - | Datasheet | 12 Weeks | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 5.2A 4.3A | 2 | 51 ns | -55°C~150°C TJ | Tape & Reel (TR) | 1997 | HEXFET® | e3 | - | Active | 1 (Unlimited) | 8 | - | EAR99 | 50mOhm | Matte Tin (Sn) | ULTRA LOW RESISTANCE | - | - | - | 2W | DUAL | GULL WING | - | - | 5.2A | - | IRF7307PBF | - | - | - | - | - | ENHANCEMENT MODE | 2W | - | - | - | N and P-Channel | SWITCHING | 50m Ω @ 2.6A, 4.5V | 700mV @ 250μA | - | 660pF @ 15V | 20nC @ 4.5V | 26ns | - | N-CHANNEL AND P-CHANNEL | 33 ns | 5.2A | 700mV | 12V | - | - | - | 20V | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | - | Logic Level Gate | 700 mV | 1.4986mm | 4.9784mm | 3.9878mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
IRF7304TRPBF Infineon Technologies | In Stock | - | Datasheet | 12 Weeks | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 4.3A | 2 | 51 ns | -55°C~150°C TJ | Tape & Reel (TR) | 1997 | HEXFET® | - | - | Active | 1 (Unlimited) | 8 | - | - | 90mOhm | - | LOGIC LEVEL COMPATIBLE | - | 2W | -20V | 2W | - | GULL WING | - | - | -4.3A | - | IRF7304PBF | - | - | - | - | Dual | ENHANCEMENT MODE | 2W | - | 8.4 ns | - | 2 P-Channel (Dual) | - | 90m Ω @ 2.2A, 4.5V | 700mV @ 250μA | - | 610pF @ 15V | 22nC @ 4.5V | 26ns | 20V | - | 33 ns | -4.3A | -700mV | 12V | - | 3.6A | - | -20V | - | - | - | METAL-OXIDE SEMICONDUCTOR | 84 ns | - | Logic Level Gate | -700 mV | 1.4986mm | 4.9784mm | 3.9878mm | No | No SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||
IRF7328TRPBF Infineon Technologies | 750 | - | Datasheet | 12 Weeks | Tin | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 8A | 2 | 198 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2004 | HEXFET® | e3 | - | Active | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 21MOhm | - | ULTRA LOW RESISTANCE | - | - | -30V | 2W | - | GULL WING | - | - | -8A | - | IRF7328PBF | - | - | 6.3 mm | 2 | Dual | ENHANCEMENT MODE | 2W | - | 13 ns | - | 2 P-Channel (Dual) | SWITCHING | 21m Ω @ 8A, 10V | 2.5V @ 250μA | - | 2675pF @ 25V | 78nC @ 10V | 15ns | 30V | - | 98 ns | -8A | -1V | 20V | - | 8A | - | -30V | - | -30V | - | METAL-OXIDE SEMICONDUCTOR | 56 ns | 150°C | Logic Level Gate | -2.5 V | 1.75mm | 4.9784mm | 3.9878mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
IRF7306TRPBF Infineon Technologies | 76 | - | Datasheet | 12 Weeks | Tin | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 3.6A | 2 | 25 ns | -55°C~150°C TJ | Tape & Reel (TR) | 1997 | HEXFET® | e3 | - | Active | 1 (Unlimited) | 8 | - | EAR99 | 100mOhm | - | ULTRA LOW RESISTANCE | - | - | -30V | 2W | - | GULL WING | - | - | -3.6A | - | IRF7306PBF | - | - | 6.3 mm | 2 | Dual | ENHANCEMENT MODE | 2W | - | 11 ns | - | 2 P-Channel (Dual) | SWITCHING | 100m Ω @ 1.8A, 10V | 1V @ 250μA | - | 440pF @ 25V | 25nC @ 10V | 17ns | 30V | - | 18 ns | -3.6A | -1V | 20V | - | - | - | -30V | 14A | - | - | METAL-OXIDE SEMICONDUCTOR | 80 ns | 150°C | Logic Level Gate | -1 V | 1.75mm | 4.9784mm | 4.05mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
 BSD235CH6327XTSA1 Infineon Technologies | 5765 | - | Datasheet | 10 Weeks | - | Surface Mount | Surface Mount | 6-VSSOP, SC-88, SOT-363 | 6 | SILICON | 950mA 530mA | 2 | - | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | OptiMOS™ | e3 | yes | Active | 1 (Unlimited) | 6 | - | EAR99 | - | Tin (Sn) | AVALANCHE RATED | 8541.21.00.95 | - | - | 500mW | DUAL | GULL WING | NOT SPECIFIED | - | - | NOT SPECIFIED | BSD235 | AEC-Q101 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | - | ENHANCEMENT MODE | - | - | - | - | N and P-Channel | - | 350m Ω @ 950mA, 4.5V | 1.2V @ 1.6μA | Halogen Free | 47pF @ 10V | 0.34nC @ 4.5V | - | 20V | N-CHANNEL AND P-CHANNEL | - | 530mA | - | 12V | -20V | 0.95A | 0.35Ohm | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | - | Logic Level Gate | - | - | - | - | - | No SVHC | ROHS3 Compliant | Lead Free | ||
 IPG20N06S4L11ATMA1 Infineon Technologies | In Stock | - | Datasheet | 12 Weeks | - | Surface Mount | Surface Mount | 8-PowerVDFN | 8 | SILICON | - | 2 | 58 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2003 | Automotive, AEC-Q101, OptiMOS™ | e3 | - | Active | 1 (Unlimited) | 8 | - | EAR99 | - | Tin (Sn) | LOGIC LEVEL COMPATIBLE | - | - | - | 65W | - | FLAT | NOT SPECIFIED | not_compliant | - | NOT SPECIFIED | - | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | - | ENHANCEMENT MODE | - | - | 11 ns | 65W | 2 N-Channel (Dual) | - | 11.2m Ω @ 17A, 10V | 2.2V @ 28μA | Halogen Free | 4020pF @ 25V | 53nC @ 10V | 3ns | - | - | 19 ns | 20A | - | 16V | 60V | - | 0.0112Ohm | - | - | - | 165 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | Logic Level Gate | - | - | - | - | - | - | ROHS3 Compliant | Contains Lead | ||
IRF7324TRPBF Infineon Technologies | In Stock | - | Datasheet | 12 Weeks | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 9A | 2 | 170 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2004 | HEXFET® | e3 | - | Active | 1 (Unlimited) | 8 | - | EAR99 | 18mOhm | Matte Tin (Sn) | HIGH RELIABILITY | - | - | -20V | 2W | - | GULL WING | 260 | - | -9A | 30 | IRF7324PBF | - | - | - | - | Dual | ENHANCEMENT MODE | 2W | - | 17 ns | - | 2 P-Channel (Dual) | SWITCHING | 18m Ω @ 9A, 4.5V | 1V @ 250μA | - | 2940pF @ 15V | 63nC @ 5V | 36ns | 20V | - | 190 ns | -9A | -1V | 12V | - | 9A | - | -20V | 71A | - | - | METAL-OXIDE SEMICONDUCTOR | 270 ns | 150°C | Logic Level Gate | - | 1.75mm | 4.9784mm | 3.9878mm | No | No SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||
IRF7380TRPBF Infineon Technologies | 3 | - | Datasheet | 12 Weeks | Tin | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | - | 2 | 41 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2008 | HEXFET® | e3 | - | Active | 1 (Unlimited) | 8 | - | EAR99 | 73MOhm | - | - | - | - | 80V | 2W | - | GULL WING | 260 | - | 3.6A | 30 | IRF7380PBF | - | - | - | - | Dual | ENHANCEMENT MODE | 2W | - | 9 ns | - | 2 N-Channel (Dual) | SWITCHING | 73m Ω @ 2.2A, 10V | 4V @ 250μA | - | 660pF @ 25V | 23nC @ 10V | 10ns | - | - | 17 ns | 3.6A | 4V | 20V | - | - | - | 80V | - | - | 75 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | Logic Level Gate | 4 V | 1.4986mm | 4.9784mm | 3.9878mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
IRF9952TRPBF Infineon Technologies | 11 | - | Datasheet | 12 Weeks | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 3.5A 2.3A | 2 | 20 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2004 | HEXFET® | - | - | Active | 1 (Unlimited) | 8 | - | EAR99 | 100mOhm | - | HIGH RELIABILITY | - | - | - | 2W | DUAL | GULL WING | - | - | 3.5A | - | IRF9952PBF | - | - | - | - | - | ENHANCEMENT MODE | 2W | - | - | - | N and P-Channel | SWITCHING | 100m Ω @ 2.2A, 10V | 1V @ 250μA | - | 190pF @ 15V | 14nC @ 10V | 14ns | - | N-CHANNEL AND P-CHANNEL | - | 3.5A | 1V | 20V | - | - | - | 30V | 16A | - | 44 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | Logic Level Gate | 1 V | 1.4986mm | 4.9784mm | 3.9878mm | No | No SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||
IRF7101TRPBF Infineon Technologies | In Stock | - | Datasheet | 12 Weeks | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | - | 2 | 24 ns | -55°C~150°C TJ | Tape & Reel (TR) | 1997 | HEXFET® | e3 | - | Not For New Designs | 1 (Unlimited) | 8 | - | EAR99 | 100mOhm | Matte Tin (Sn) | - | - | 2W | 20V | 2W | - | GULL WING | - | - | 3.5A | - | IRF7101PBF | - | - | 6.3 mm | - | Dual | ENHANCEMENT MODE | 2W | - | 7 ns | - | 2 N-Channel (Dual) | SWITCHING | 100m Ω @ 1.8A, 10V | 3V @ 250μA | - | 320pF @ 15V | 15nC @ 10V | 10ns | - | - | 30 ns | 3.5A | 3V | 12V | - | - | - | 20V | 14A | 20V | - | METAL-OXIDE SEMICONDUCTOR | - | - | Logic Level Gate | 3 V | 1.4986mm | 4.9784mm | 3.9878mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
IRF7907TRPBF Infineon Technologies | 4000 | - | Datasheet | 12 Weeks | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 9.1A 11A | 2 | - | -55°C~150°C TJ | Tape & Reel (TR) | 2008 | HEXFET® | e3 | - | Active | 1 (Unlimited) | 8 | - | EAR99 | - | Matte Tin (Sn) | - | - | - | - | 2W | - | GULL WING | 260 | - | - | 30 | IRF7907PBF | - | - | - | - | Dual | ENHANCEMENT MODE | 2W | - | - | - | 2 N-Channel (Dual) | - | 16.4m Ω @ 9.1A, 10V | 2.35V @ 25μA | - | 850pF @ 15V | 10nC @ 4.5V | - | - | - | - | 11A | - | 20V | - | - | - | 30V | - | - | 15 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | Logic Level Gate | - | 1.4986mm | 4.9784mm | 3.9878mm | No | - | ROHS3 Compliant | Lead Free | ||
IRF7319TRPBF Infineon Technologies | 4527 | - | Datasheet | 12 Weeks | Tin | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | - | 2 | 34 ns | -55°C~150°C TJ | Tape & Reel (TR) | 1997 | HEXFET® | - | - | Active | 1 (Unlimited) | 8 | - | EAR99 | 29mOhm | - | AVALANCHE RATED, ULTRA LOW RESISTANCE | - | - | - | 2W | DUAL | GULL WING | - | - | 6.5A | - | IRF7319PBF | - | - | 6.3 mm | - | - | ENHANCEMENT MODE | 2W | - | - | - | N and P-Channel | SWITCHING | 29m Ω @ 5.8A, 10V | 1V @ 250μA | - | 650pF @ 25V | 33nC @ 10V | 13ns | - | N-CHANNEL AND P-CHANNEL | 32 ns | 6.5A | 1V | 20V | - | - | - | 30V | 30A | - | - | METAL-OXIDE SEMICONDUCTOR | - | - | Standard | 1 V | 1.4986mm | 4.9784mm | 3.9878mm | No | No SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||
IRF7351TRPBF Infineon Technologies | 4000 | - | Datasheet | 12 Weeks | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | - | 2 | 17 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2009 | HEXFET® | e3 | - | Active | 1 (Unlimited) | 8 | - | EAR99 | - | Matte Tin (Sn) | - | - | - | - | 2W | - | GULL WING | - | - | - | - | IRF7351PBF | - | - | - | - | Dual | ENHANCEMENT MODE | 2W | - | 5.1 ns | - | 2 N-Channel (Dual) | SWITCHING | 17.8m Ω @ 8A, 10V | 4V @ 50μA | - | 1330pF @ 30V | 36nC @ 10V | 5.9ns | 60V | - | 6.7 ns | 8A | - | 20V | - | 8A | - | 60V | 64A | - | - | METAL-OXIDE SEMICONDUCTOR | - | - | Logic Level Gate | - | 1.4986mm | 4.9784mm | 3.9878mm | No | - | ROHS3 Compliant | Lead Free | ||
IRF7343TRPBF Infineon Technologies | 4000 | - | Datasheet | 12 Weeks | Tin | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 4.7A 3.4A | 2 | 43 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2004 | HEXFET® | e3 | - | Active | 1 (Unlimited) | 8 | - | EAR99 | 50mOhm | - | AVALANCHE RATED, ULTRA LOW RESISTANCE | - | - | - | 2W | DUAL | GULL WING | - | - | 4.7A | - | IRF7343PBF | - | - | 6.3 mm | 2 | - | ENHANCEMENT MODE | 2W | - | 8.3 ns | - | N and P-Channel | SWITCHING | 50m Ω @ 4.7A, 10V | 1V @ 250μA | - | 740pF @ 25V | 36nC @ 10V | 10ns | - | N-CHANNEL AND P-CHANNEL | 22 ns | 4.7A | 1V | 20V | - | - | - | 55V | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | 150°C | Standard | 1 V | 1.75mm | 4.9784mm | 3.9878mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
 IRLHS6376TRPBF Infineon Technologies | 3816 | - | Datasheet | 12 Weeks | - | Surface Mount | Surface Mount | 6-VDFN Exposed Pad | 6 | SILICON | - | 2 | 11 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | HEXFET® | e3 | - | Active | 1 (Unlimited) | 6 | - | EAR99 | - | Matte Tin (Sn) | - | - | - | - | 1.5W | - | - | - | - | - | - | IRLHS6376 | - | - | - | - | Dual | ENHANCEMENT MODE | 1.5W | DRAIN | 4.4 ns | - | 2 N-Channel (Dual) | SWITCHING | 63m Ω @ 3.4A, 4.5V | 1.1V @ 10μA | - | 270pF @ 25V | 2.8nC @ 4.5V | 11ns | 30V | - | 9.4 ns | 3.6A | 800mV | 12V | - | 3.4A | 0.082Ohm | 30V | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | - | Logic Level Gate | 800 mV | - | - | - | No | No SVHC | ROHS3 Compliant | Lead Free | ||
IRF9956TRPBF Infineon Technologies | In Stock | - | Datasheet | 12 Weeks | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | - | 2 | 13 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2004 | HEXFET® | - | - | Active | 1 (Unlimited) | 8 | - | - | - | - | AVALANCHE RATED, HIGH RELIABILITY | - | - | 20V | 2W | - | GULL WING | - | - | 3.5A | - | IRF9956PBF | - | - | - | - | Dual | ENHANCEMENT MODE | 2W | - | 6.2 ns | - | 2 N-Channel (Dual) | SWITCHING | 100m Ω @ 2.2A, 10V | 1V @ 250μA | - | 190pF @ 15V | 14nC @ 10V | 8.8ns | - | - | 3 ns | 3.5A | - | 20V | - | - | 0.1Ohm | 30V | 16A | - | 44 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | Logic Level Gate | 20 V | 1.4986mm | 4.9784mm | 3.9878mm | No | No SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||
IRF7316TRPBF Infineon Technologies | 2120 | - | Datasheet | 12 Weeks | Tin | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 4.9A | 2 | 34 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2004 | HEXFET® | - | - | Active | 1 (Unlimited) | 8 | - | EAR99 | 58mOhm | - | AVALANCHE RATED | - | - | -30V | 2W | - | GULL WING | - | - | -4.9A | - | IRF7316PBF | - | - | - | 2 | Dual | ENHANCEMENT MODE | 2W | - | 13 ns | - | 2 P-Channel (Dual) | SWITCHING | 58m Ω @ 4.9A, 10V | 1V @ 250μA | - | 710pF @ 25V | 34nC @ 10V | 13ns | 30V | - | 32 ns | -4.9A | -1V | 20V | - | - | - | -30V | 30A | - | 140 mJ | METAL-OXIDE SEMICONDUCTOR | 66 ns | 150°C | Logic Level Gate | -1 V | 1.75mm | 4.9784mm | 3.9878mm | No | No SVHC | ROHS3 Compliant | Contains Lead, Lead Free |