- Continuous Drain Current (ID)
- Current - Continuous Drain (Id) @ 25℃
- Drive Voltage (Max Rds On, Min Rds On)
- FET Type
- Factory Lead Time
- Gate Charge (Qg) (Max) @ Vgs
- Gate to Source Voltage (Vgs)
- Input Capacitance (Ciss) (Max) @ Vds
- Lead Free
- Moisture Sensitivity Level (MSL)
- Mount
- Mounting Type
Attribute column
Manufacturer
Infineon Transistors - FETs, MOSFETs - Single
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Factory Lead Time | Contact Plating | Mount | Mounting Type | Package / Case | Number of Pins | Transistor Element Material | Manufacturer Package Identifier | Current - Continuous Drain (Id) @ 25℃ | Drive Voltage (Max Rds On, Min Rds On) | Number of Elements | Power Dissipation (Max) | Turn Off Delay Time | Operating Temperature | Packaging | Published | Series | JESD-609 Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Resistance | Terminal Finish | Additional Feature | Voltage - Rated DC | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Current Rating | Time@Peak Reflow Temperature-Max (s) | JESD-30 Code | Number of Channels | Voltage | Element Configuration | Current | Operating Mode | Power Dissipation | Case Connection | Turn On Delay Time | FET Type | Transistor Application | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Drain to Source Voltage (Vdss) | Vgs (Max) | Fall Time (Typ) | Continuous Drain Current (ID) | Threshold Voltage | JEDEC-95 Code | Gate to Source Voltage (Vgs) | Drain Current-Max (Abs) (ID) | Drain to Source Breakdown Voltage | Pulsed Drain Current-Max (IDM) | Dual Supply Voltage | Avalanche Energy Rating (Eas) | Recovery Time | Max Junction Temperature (Tj) | Nominal Vgs | Switching Current | Height | Length | Width | Radiation Hardening | REACH SVHC | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 IRLR7843TRPBF Infineon Technologies | 1124 | - | Datasheet | 12 Weeks | Tin | Surface Mount | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | SILICON | - | 161A Tc | 4.5V 10V | 1 | 140W Tc | 34 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2008 | HEXFET® | e3 | Active | 1 (Unlimited) | 2 | - | EAR99 | 3.3MOhm | - | - | 30V | - | GULL WING | 260 | 161A | 30 | R-PSSO-G2 | - | - | Single | - | ENHANCEMENT MODE | 140W | DRAIN | 25 ns | N-Channel | SWITCHING | 3.3m Ω @ 15A, 10V | 2.3V @ 250μA | 4380pF @ 15V | 50nC @ 4.5V | 42ns | - | ±20V | 19 ns | 161A | 2.3V | TO-252AA | 20V | - | 30V | 620A | - | - | 59 ns | - | 2.3 V | - | 2.2606mm | 6.7056mm | 6.22mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
 IRFB4227PBF Infineon Technologies | 5000 | - | Datasheet | 12 Weeks | - | Through Hole | Through Hole | TO-220-3 | 3 | SILICON | - | 65A Tc | 10V | 1 | 330W Tc | 21 ns | -40°C~175°C TJ | Tube | 2004 | HEXFET® | - | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 24MOhm | - | - | - | - | - | - | - | - | - | 1 | - | Single | - | ENHANCEMENT MODE | 330W | DRAIN | 33 ns | N-Channel | SWITCHING | 24m Ω @ 46A, 10V | 5V @ 250μA | 4600pF @ 25V | 98nC @ 10V | 20ns | - | ±30V | 31 ns | 65A | 5V | TO-220AB | 30V | - | 200V | 260A | 200V | - | 150 ns | 175°C | 5 V | - | 19.8mm | 10.6426mm | 4.82mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
IRFR024NTRPBF Infineon Technologies | 2970 | - | Datasheet | 12 Weeks | Tin | Surface Mount | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | SILICON | - | 17A Tc | 10V | 1 | 45W Tc | 19 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2004 | HEXFET® | e3 | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 75mOhm | - | AVALANCHE RATED, ULTRA LOW RESISTANCE | 55V | - | GULL WING | - | 17A | - | R-PSSO-G2 | 1 | - | Single | - | ENHANCEMENT MODE | 38W | DRAIN | 4.9 ns | N-Channel | SWITCHING | 75m Ω @ 10A, 10V | 4V @ 250μA | 370pF @ 25V | 20nC @ 10V | 34ns | - | ±20V | 27 ns | 17A | 4V | TO-252AA | 20V | - | 55V | 68A | 55V | - | 83 ns | 175°C | 4 V | - | 2.52mm | 6.7056mm | 6.22mm | No | No SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||
IRFR5410TRPBF Infineon Technologies | 2000 | - | Datasheet | 12 Weeks | Tin | Surface Mount | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | SILICON | - | 13A Tc | 10V | 1 | 66W Tc | 45 ns | -55°C~150°C TJ | Tape & Reel (TR) | 1999 | HEXFET® | e3 | Active | 1 (Unlimited) | 2 | - | EAR99 | 205mOhm | - | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE | -100V | - | GULL WING | 260 | -13A | 30 | R-PSSO-G2 | 1 | - | Single | - | ENHANCEMENT MODE | 66W | DRAIN | 15 ns | P-Channel | SWITCHING | 205m Ω @ 7.8A, 10V | 4V @ 250μA | 760pF @ 25V | 58nC @ 10V | 58ns | 100V | ±20V | 46 ns | -13A | -4V | TO-252AA | 20V | - | -100V | 52A | -100V | - | 190 ns | 150°C | -4 V | - | 2.52mm | 6.7056mm | 6.22mm | No | No SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||
 IRF9540NSTRLPBF Infineon Technologies | 100000 | - | Datasheet | 12 Weeks | Tin | Surface Mount | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | SILICON | - | 23A Tc | 10V | 1 | 3.1W Ta 110W Tc | 40 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2003 | HEXFET® | e3 | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 117mOhm | - | AVALANCHE RATED, HIGH RELIABILITY | -100V | - | GULL WING | 260 | -23A | 30 | R-PSSO-G2 | 1 | 100V | Single | 23A | ENHANCEMENT MODE | 3.8W | DRAIN | 13 ns | P-Channel | SWITCHING | 117m Ω @ 14A, 10V | 4V @ 250μA | 1450pF @ 25V | 110nC @ 10V | 67ns | - | ±20V | 51 ns | -23A | -4V | - | 20V | - | -100V | - | 100V | 84 mJ | 210 ns | 150°C | -4 V | - | 5.084mm | 10.668mm | 9.65mm | No | No SVHC | ROHS3 Compliant | Contains Lead | ||
IRF4905STRLPBF Infineon Technologies | 800 | - | Datasheet | 12 Weeks | Tin | Surface Mount | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | SILICON | D2Pak | 42A Tc | 10V | 1 | 170W Tc | 51 ns | -55°C~150°C TJ | Tape & Reel (TR) | 1997 | HEXFET® | e3 | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 20mOhm | - | HIGH RELIABILITY, AVALANCHE RATED | -55V | - | GULL WING | 260 | -74A | 30 | R-PSSO-G2 | 1 | - | Single | - | ENHANCEMENT MODE | 3.8W | DRAIN | 20 ns | P-Channel | SWITCHING | 20m Ω @ 42A, 10V | 4V @ 250μA | 3500pF @ 25V | 180nC @ 10V | 99ns | 55V | ±20V | 64 ns | -42A | -2V | - | 20V | - | -55V | 280A | -55V | - | 92 ns | 150°C | -4 V | - | 4.83mm | 10.54mm | 10.54mm | No | No SVHC | ROHS3 Compliant | Contains Lead | ||
IRFR6215TRPBF Infineon Technologies | 2000 | - | Datasheet | 12 Weeks | - | Surface Mount | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | SILICON | - | 13A Tc | 10V | 1 | 110W Tc | 53 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2004 | HEXFET® | e3 | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 295mOhm | Matte Tin (Sn) - with Nickel (Ni) barrier | AVALANCHE RATED | -150V | - | GULL WING | 260 | -13A | 30 | R-PSSO-G2 | 1 | - | Single | - | ENHANCEMENT MODE | 110W | DRAIN | 14 ns | P-Channel | SWITCHING | 295m Ω @ 6.6A, 10V | 4V @ 250μA | 860pF @ 25V | 66nC @ 10V | 36ns | 150V | ±20V | 37 ns | -13A | -4V | TO-252AA | 20V | - | -150V | 44A | -150V | - | 240 ns | 175°C | -4 V | - | 2.52mm | 6.7056mm | 6.22mm | No | No SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||
IRFR5505TRPBF Infineon Technologies | 2000 | - | Datasheet | 12 Weeks | Tin | Surface Mount | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | SILICON | - | 18A Tc | 10V | 1 | 57W Tc | 20 ns | -55°C~150°C TJ | Tape & Reel (TR) | 1997 | HEXFET® | e3 | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 110mOhm | - | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | -55V | - | GULL WING | 260 | -18A | 30 | R-PSSO-G2 | 1 | - | Single | - | ENHANCEMENT MODE | 57W | DRAIN | 12 ns | P-Channel | SWITCHING | 110m Ω @ 9.6A, 10V | 4V @ 250μA | 650pF @ 25V | 32nC @ 10V | 28ns | 55V | ±20V | 16 ns | -18A | -4V | TO-252AA | 20V | - | -55V | 64A | -55V | - | 77 ns | 150°C | -4 V | - | 2.52mm | 6.7056mm | 6.22mm | No | No SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||
 IRLL014NTRPBF Infineon Technologies | 2500 | - | Datasheet | 12 Weeks | Tin | Surface Mount | Surface Mount | TO-261-4, TO-261AA | 3 | SILICON | - | 2A Ta | 4V 10V | 1 | 1W Ta | 14 ns | -55°C~150°C TJ | Tape & Reel (TR) | 1999 | HEXFET® | e3 | Active | 1 (Unlimited) | 4 | - | EAR99 | 200mOhm | - | AVALANCHE RATED, ULTRA LOW RESISTANCE | 55V | DUAL | GULL WING | - | 2A | - | R-PDSO-G4 | - | - | Single | - | ENHANCEMENT MODE | 2.1W | DRAIN | 5.1 ns | N-Channel | SWITCHING | 140m Ω @ 2A, 10V | 2V @ 250μA | 230pF @ 25V | 14nC @ 10V | 4.9ns | - | ±16V | 2.9 ns | 2A | 2V | - | 16V | 2A | 55V | - | 55V | - | 61 ns | - | 2 V | - | 1.4478mm | 6.6802mm | 3.7mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
IRFR220NTRPBF Infineon Technologies | 2000 | - | Datasheet | 12 Weeks | Tin | Surface Mount | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | SILICON | - | 5A Tc | 10V | 1 | 43W Tc | 20 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2004 | HEXFET® | e3 | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 600MOhm | - | - | 200V | - | GULL WING | 260 | 5A | 30 | R-PSSO-G2 | 1 | - | Single | - | ENHANCEMENT MODE | 43W | DRAIN | 6.4 ns | N-Channel | SWITCHING | 600m Ω @ 2.9A, 10V | 4V @ 250μA | 300pF @ 25V | 23nC @ 10V | 11ns | - | ±20V | 12 ns | 5A | 4V | TO-252AA | 20V | 5A | 200V | 20A | 200V | 46 mJ | 140 ns | 175°C | 4 V | 5A | 2.52mm | 6.7056mm | 6.22mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
 IRFP260NPBF Infineon Technologies | 770 | - | Datasheet | 12 Weeks | - | Through Hole | Through Hole | TO-247-3 | 3 | SILICON | - | 50A Tc | 10V | 1 | 300W Tc | 55 ns | -55°C~175°C TJ | Bulk | 2004 | HEXFET® | e3 | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 40mOhm | Matte Tin (Sn) - with Nickel (Ni) barrier | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 200V | - | - | 250 | 50A | 30 | - | - | - | Single | - | ENHANCEMENT MODE | 300W | DRAIN | 17 ns | N-Channel | SWITCHING | 40m Ω @ 28A, 10V | 4V @ 250μA | 4057pF @ 25V | 234nC @ 10V | 60ns | - | ±20V | 48 ns | 50A | 4V | TO-247AC | 20V | - | 200V | 200A | 200V | 560 mJ | 402 ns | - | 4 V | - | 20.2946mm | 15.875mm | 5.3mm | No | No SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||
IRFR9024NTRPBF Infineon Technologies | 2000 | - | Datasheet | 12 Weeks | Tin | Surface Mount | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | SILICON | - | 11A Tc | 10V | 1 | 38W Tc | 23 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2004 | HEXFET® | e3 | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 175mOhm | - | AVALANCHE RATED, HIGH RELIABILITY | -55V | - | GULL WING | 260 | -11A | 30 | R-PSSO-G2 | 1 | - | Single | - | ENHANCEMENT MODE | 38W | DRAIN | 13 ns | P-Channel | SWITCHING | 175m Ω @ 6.6A, 10V | 4V @ 250μA | 350pF @ 25V | 19nC @ 10V | 55ns | - | ±20V | 37 ns | -11A | -4V | TO-252AA | 20V | - | -55V | 44A | 55V | 62 mJ | 71 ns | 150°C | -4 V | - | 2.52mm | 6.7056mm | 6.22mm | No | No SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||
IRLR2905TRPBF Infineon Technologies | 593 | - | Datasheet | 12 Weeks | Tin | Surface Mount | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | SILICON | - | 42A Tc | 4V 10V | 1 | 110W Tc | 26 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2000 | HEXFET® | e3 | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 27mOhm | - | AVALANCHE RATED | 55V | - | GULL WING | 260 | 41A | 30 | R-PSSO-G2 | 1 | - | Single | - | ENHANCEMENT MODE | 69W | DRAIN | 11 ns | N-Channel | SWITCHING | 27m Ω @ 25A, 10V | 2V @ 250μA | 1700pF @ 25V | 48nC @ 5V | 84ns | - | ±16V | 15 ns | 42A | 2V | TO-252AA | 16V | 20A | 55V | - | 55V | - | 120 ns | 175°C | 2 V | - | 2.52mm | 6.7056mm | 6.22mm | No | No SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||
IRFR9120NTRPBF Infineon Technologies | 500 | - | Datasheet | 12 Weeks | Tin | Surface Mount | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | SILICON | - | 6.6A Tc | 10V | 1 | 40W Tc | 28 ns | -55°C~150°C TJ | Tape & Reel (TR) | 1998 | HEXFET® | e3 | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 480mOhm | - | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | -100V | - | GULL WING | 260 | -6.6A | 30 | R-PSSO-G2 | - | - | Single | - | ENHANCEMENT MODE | 40W | DRAIN | 14 ns | P-Channel | SWITCHING | 480m Ω @ 3.9A, 10V | 4V @ 250μA | 350pF @ 25V | 27nC @ 10V | 47ns | - | ±20V | 31 ns | -6.6A | -4V | TO-252AA | 20V | - | -100V | 26A | 100V | - | 150 ns | - | -4 V | - | 2.3876mm | 6.7056mm | 6.22mm | No | No SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||
IRLR024NTRPBF Infineon Technologies | 2000 | - | Datasheet | 12 Weeks | Tin | Surface Mount | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | SILICON | - | 17A Tc | 4V 10V | 1 | 45W Tc | 20 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2004 | HEXFET® | e3 | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 80mOhm | - | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | 55V | - | GULL WING | 260 | 17A | 30 | R-PSSO-G2 | 1 | - | Single | - | ENHANCEMENT MODE | 45W | DRAIN | 7.1 ns | N-Channel | SWITCHING | 65m Ω @ 10A, 10V | 2V @ 250μA | 480pF @ 25V | 15nC @ 5V | 74ns | - | ±16V | 29 ns | 17A | 2V | TO-252AA | 16V | - | 55V | 72A | 55V | 68 mJ | 90 ns | 175°C | 2 V | - | 2.52mm | 6.7056mm | 6.22mm | No | No SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||
IRLL2705TRPBF Infineon Technologies | 4925 | - | Datasheet | 12 Weeks | - | Surface Mount | Surface Mount | TO-261-4, TO-261AA | 3 | SILICON | - | 3.8A Ta | 4V 10V | 1 | 1W Ta | 35 ns | -55°C~150°C TJ | Tape & Reel (TR) | 1997 | HEXFET® | e3 | Active | 1 (Unlimited) | 4 | - | EAR99 | 40mOhm | Matte Tin (Sn) | LOGIC LEVEL COMPATIBLE | 55V | DUAL | GULL WING | 260 | 3.8A | 30 | R-PDSO-G4 | 1 | - | Single | - | ENHANCEMENT MODE | 2.1W | DRAIN | 6.2 ns | N-Channel | - | 40m Ω @ 3.8A, 10V | 2V @ 250μA | 870pF @ 25V | 48nC @ 10V | 12ns | - | ±16V | 22 ns | 3.8A | 2V | - | 16V | 5.2A | 55V | - | 55V | - | 88 ns | 150°C | 2 V | - | 1.8mm | 6.6802mm | 6.7mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
 IRF7425TRPBF Infineon Technologies | In Stock | - | Datasheet | 12 Weeks | Tin | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | - | 15A Ta | 2.5V 4.5V | 1 | 2.5W Ta | 230 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | HEXFET® | e3 | Active | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 8.2MOhm | - | - | -20V | DUAL | GULL WING | 260 | -15A | 30 | - | 1 | - | Single | - | ENHANCEMENT MODE | 2.5W | - | 13 ns | P-Channel | SWITCHING | 8.2m Ω @ 15A, 4.5V | 1.2V @ 250μA | 7980pF @ 15V | 130nC @ 4.5V | 20ns | - | ±12V | 160 ns | -15A | -1.2V | - | 12V | - | -20V | 60A | 20V | - | 180 ns | 150°C | 1.2 V | - | 1.75mm | 4.9784mm | 3.9878mm | No | No SVHC | ROHS3 Compliant | Contains Lead | ||
IRF540NSTRLPBF Infineon Technologies | 800 | - | Datasheet | 12 Weeks | Tin | Surface Mount | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | SILICON | - | 33A Tc | 10V | 1 | 130W Tc | 39 ns | -55°C~175°C TJ | Tape & Reel (TR) | 1997 | HEXFET® | e3 | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 44MOhm | - | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 100V | - | GULL WING | 260 | 33A | 30 | R-PSSO-G2 | - | - | Single | - | ENHANCEMENT MODE | 130W | DRAIN | 11 ns | N-Channel | SWITCHING | 44m Ω @ 16A, 10V | 4V @ 250μA | 1960pF @ 25V | 71nC @ 10V | 35ns | - | ±20V | 35 ns | 33A | 4V | - | 20V | - | 100V | - | 100V | - | 170 ns | - | 4 V | - | 4.826mm | 10.668mm | 9.65mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
IRLL024NTRPBF Infineon Technologies | 2500 | - | Datasheet | 12 Weeks | Tin | Surface Mount | Surface Mount | TO-261-4, TO-261AA | 3 | SILICON | IRLL024NTRPBF | 3.1A Ta | 4V 10V | 1 | 1W Ta | 18 ns | -55°C~150°C TJ | Tape & Reel (TR) | 1999 | HEXFET® | - | Active | 1 (Unlimited) | 4 | - | EAR99 | 65mOhm | - | AVALANCHE RATED, ULTRA LOW RESISTANCE | 55V | DUAL | GULL WING | - | 3.1A | - | R-PDSO-G4 | 1 | - | Single | - | ENHANCEMENT MODE | 2.1W | DRAIN | 7.4 ns | N-Channel | SWITCHING | 65m Ω @ 3.1A, 10V | 2V @ 250μA | 510pF @ 25V | 15.6nC @ 5V | 21ns | - | ±16V | 25 ns | 3.1A | 2V | - | 16V | - | 55V | - | 55V | - | 58 ns | 150°C | 2 V | - | 1.8mm | 6.6802mm | 3.7mm | No | No SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||
IRF9Z34NSTRLPBF Infineon Technologies | 800 | - | Datasheet | 12 Weeks | - | Surface Mount | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | SILICON | - | 19A Tc | 10V | 1 | 3.8W Ta 68W Tc | 30 ns | -55°C~175°C TJ | Tape & Reel (TR) | 1997 | HEXFET® | e3 | Active | 1 (Unlimited) | 2 | - | EAR99 | 100mOhm | Matte Tin (Sn) - with Nickel (Ni) barrier | AVALANCHE RATED, HIGH RELIABILITY | -55V | - | GULL WING | 260 | -19A | 30 | R-PSSO-G2 | 1 | - | Single | - | ENHANCEMENT MODE | 68W | DRAIN | 13 ns | P-Channel | SWITCHING | 100m Ω @ 10A, 10V | 4V @ 250μA | 620pF @ 25V | 35nC @ 10V | 55ns | - | ±20V | 41 ns | -19A | -2V | - | 20V | - | -55V | 68A | 55V | - | 82 ns | 175°C | -4 V | - | 4.83mm | 10.668mm | 9.65mm | No | No SVHC | ROHS3 Compliant | Contains Lead, Lead Free |